MBN1000GR12A - Hitachi

Hitachi IGBT Module / Silicon N-Channel IGBT

MBN1200GR12A

PDE-N1200GR12A-0

[Rated 1200A/1200V, Single-pack type]

FEATURES OUTLINE DRAWING

(8)

130

27.5

19.5

46.75

110

13 30 36

2-M4 4-φ6.5

2-M8

Weight：1300g

Unit in mm

• Low saturation voltage and high speed.

• Low turn-OFF switching loss.

• Low noise due to built-in free-wheeling diode.

ltra Soft and Fast recovery Diode (USFD))

• High reliability structure.

• Isolated heat sink (terminals to base).

CIRCUIT DIAGRAM

E C

ABSOLUTE MAXIMUM RATINGS (TC=25°C)

Item Symbol Unit Value

Collector-Emitter Voltage VCES V 1200

Gate-Emitter Voltage VGES V ±20

DC IC 1200

Collector Current 1ms ICP A 2400

DC IF 1200 *1

Forward Current 1ms IFM A 2400

Collector Power Dissipation PC W 8330

Junction Temperature Tj °C -40 ~ +150

S torage Temperature Tstg °C -40 ~ +125

Isolation Voltage Viso V

RMS 2500(AC 1 minute)

Terminals(M4/M8) 1.37 / 7.84 *2

Screw Torque Mounting

N·m 2.94 *3

Notes; *1 : RMS current of diode ≤ 360 Arms

*2 : Recommended value 1.18 / 7.35 N·m

*3 : Recommended value 2.45 N·m

CHARACTERISTICS (TC=25°C)

Item Symbol Unit Min. Typ. Max. Test Conditions

Collector-Emitter Cut-Off Current ICES mA

- -

1.0 VCE=1200V, VGE=0V

Gate-Emitter Leakage Current IGES nA

±500 VGE=±20V, VCE=0V

Collector-Emitter Saturation Voltage VCE(sat) V

2.4 3.0 IC=1200A, VGE=15V

Gate-Emitter Threshold V olt age VGE(TO) V

10 VCE=5V, IC=1200mA

Input Capacitance Cies nF

108

CE=10V, VGE=0V, f=1MHz

Rise Time tr

0.6 1.5

Turn-On Timeton

0.8 2.1

Fall Timetf

0.2 0.4

Switching Ti mes

Turn-Off Timetoff

µs

1.4 1.8

CC=600V, IC=1200A

G=3.3Ω *4

GE=±15V

Inductive Load

Peak Forward Voltage DropVFM V

2.5

3.7 IF=1200A, VGE=0V

Reverse Recovery Timetrr µs

- -

0.5 I

F=1200A, VGE=-10V,di/dt=1200A/µs

IGBT Rth(j-c) 0.015

Thermal Impedance FWDRth(j-c) °C/W

0.035 Junction to case

Notes; *4 : RG value is the test condition’s value for decision of the switching times, not recommended value, please de termine

the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted.

Remark; For actual application,please confir m this spec.sheet is the newest revision.

http://store.iiic.cc/

VGE=15V 14V13V12V

2400

2200

1800

1400

1000

600

200

2000

1600

800

400

0246810

1200

2400

2200

1800

1400

1000

600

200

2000

1600

800

400

1200

11V

TYPICAL

10V

Collector Current, Ic (A)

Collector to Emitter Voltage, VCE (V)

Collector current vs. Collector to Emitter voltage

Ic=2400A

Ic=1200A

00 5 10 15 20

TYPICAL

Collector to Emitter Voltage, V

(V)

Gate to Emitter Voltage, VGE (V)

Collector to Emitter voltage vs. Gate to Emitter voltage

0048002400 7200 9600 12000

TYPICAL TYPICAL

Vcc=600V

Ic =1200A

Tc=25°C

Gate to Emitter Voltage, V

(V)

Forward Current, I

(A)

Gate Charge, QG (nC)

Gate charge characteristics

1200

2400

2200

1800

1400

1000

600

200

2000

1600

400

800

0012345

Forw ard V oltage , VF (V)

Forward voltage of free-wheeling diode

00 5 10 15 20

TYPICAL

Collector to Emitter Voltage, V

(V)

Gate to Emitter Voltage, VGE (V)

Collector to Emitter voltage vs. Gate to Emitter voltage

Collector to Emitter Voltage, VCE (V)

Collector current vs. Collector to Emitter voltage

PDE-N1200GR12A-0

Tc=25°C

Ic=2400A

Ic=1200A

Pc=8330W

VGE=0V

Tc=25°C

Tc=125°C

Tc=25°C

VGE=15V 14V13V12V

0246 810

11V

TYPICAL

10V

Tc=125°C

http://store.iiic.cc/

TYPICAL

400

350

300

200

250

150

100

00 1000 1200600 800200 400 1400

Switching Loss, Et

,Et

off

, E

(mJ/pulse)

Collector Current. IC (A)

Switching loss vs. Collector current

TYPICAL

1000

100

1110 100

Switching Loss, Et

, Et

off

, E

(mJ/pulse)

Gate Resistance. RG (Ω)

Switching loss vs. Gate resistance

Err

10000

1000

100

10 200 400 600 800 1000 1200 1400

Collector Current, Ic (A)

Collector to Emitter Voltage, VCE (V)

Reverse biased safe operating area

Etoff

Eton

0.1

0.01

0.001

0.001 0.01 0.1 1 10

Transient Thermal Impedance, R

th(j-c)

(°C/W)

Time, t (s)

Transient thermal impedance

Diode

IGBT

VGE=±15V

RG=3.3Ω

TC≤125°C

PDE-N1200GR12A-0

Vcc=600V

VGE=±15V

RG=3.3Ω

TC=125°C

Inductive Load

Vcc=600V

VGE=±15V

IC=1200A

TC=125°C

Inductive Load

Err

Eton

Etoff

http://store.iiic.cc/

1. The information given herein, including the specifications and dimensions, is subject to

change without prior notice to improve product characteristics. Before ordering,

purchasers are adviced to contact Hitachi sales department for the latest version of this

data sheets.

2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure

before use.

3. In cases where extremely high reliability is required(such as use in nuclear power control,

aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel

control equipment and various kinds of safety equipment), safety should be ensured by

using semiconductor devices that feature assured safety or by means of users’ fail-safe

precautions or other arrangement. Or consult Hitachi’s sales department staff.

4. In no event shall Hitachi be liable for any damages that may result from an accident or

any other cause during op eration of the user’s units according to this data sheets. Hitachi

assumes no responsibility for an y intellectual property claims or any other problems that

may result from applications of information, products or circuits described in this data

sheets.

5. In no event shall Hitachi be liable for any failure in a semiconductor device or any

secondary damage resulting from use at a value exceeding the absolute maximum rating.

6. No license is granted by this data sheets under any patents or other rights of any third

party or Hitachi, Ltd.

7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,

without the expressed written permission of Hitachi, Ltd.

8. The products (technologies) described in this data sheets are not to be provided to any

party whose purpose in their application will hinder maintenance of international peace

and safety not are they to be applied to that purpose by their direct purchasers or any

third party. When exporting these products (technologies), the necessary procedures are

to be taken in accordance with related laws and regulations.

HITACHI POWER SEMICONDUCTORS

 For inquiries relating to the products, please contact nearest overseas representatives which is located

“Inquiry” portion on the top page of a home page.

Notices

NoticesNotices

Notices

Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse

http://store.iiic.cc/