2007-2013 Microchip Technology Inc. DS20002052C-page 1
MCP1401/02
Features
• High Peak Output Current: 500 mA (typical)
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• Low Shoot-Through/Cross-Conduction Current in
Output St age
• High Capacitive Load Drive Capability:
- 470 pF in 19 ns (typ ical)
- 1000 pF in 34 ns (typic al)
• Short Delay Times: 35 ns (typical )
• Matched Rise/Fall Times
• Low Supply Current:
- With Logic ‘1’ Inpu t – 0. 85 mA (typical)
- With Logic ‘0’ Input – 0.1 mA (typical)
• Latch-Up Protected: Will Withstand 500 mA
Reverse Current
• Logic Input will Withstand Negative Swing up to 5V
• Space-saving 5-Lead SOT-23 Package
Applications
• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
• Motor and Solenoid Drive
General Description
The MCP1401/02 are high-speed MOSFET drivers
capable of providing 500 mA of peak current. The
inverting or non-inverting single channel output is
directly controlled from either TTL or CMOS (3V to
18V). These devices also feature low shoot-through
current, m atched ri se/fall t imes and propag ation del ays
which make them ideal for high switching frequency
applications.
The MCP1401/02 devices operate from a single 4.5V
to 18V power supply and can easily charge and
discharge 470 pF gate capacitance in under 19 ns
(typica l). They pr ovide low enough impeda nces in both
the on and off states to ensure the MOSFET’s intended
state will not be affected, even by large transients.
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin.
They can accept, without damage or logic upset, up to
500 mA of r evers e cur re nt bei ng fo rce d back into thei r
outputs. All terminals are fully protected against
Electrostatic Discharge (ESD) up to 1 kV (HBM) and
300V (MM).
Package Types
4
1
2
3
5
VDD
GND
IN
OUT
GND
OUT
GND
MCP1401 MCP1402
SOT-23
Tiny 500 mA, High-Speed Power MOSFET Driver
MCP1401/02
DS20002052C-page 2 2007-2013 Microchip Technology Inc.
Functional Block Diagram
Effective
Input C = 25 pF
MCP1401 Inverting
MCP1402 Non-inverting
Input
GND
VDD
300 mV
4.7V
Inverting
Non-inverting
850 µA
Output
(Each Input)
2007-2013 Microchip Technology Inc. DS20002052C-page 3
MCP1401/02
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Supply Voltage.....................................................+20V
Input Voltage....................(VDD + 0.3V) to (GND – 5V)
Input Current (VIN >V
DD)...................................50 mA
Package Power Dissipation (TA=50
oC)
SOT-23-5........................................................0.39W
† Notice: S tresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the devi ce at those or any other c onditions ab ove those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
DC CHARACTERISTICS (Note 2)
Electrical Specifications: Unless otherwise indicated, TA= +25°C, with 4.5V VDD 18V.
Parameters Sym. Min. Typ. Max. Units Conditions
Input
Logic ‘1’, High Input Voltage VIH 2.4 1.5 — V
Logic ‘0’, Low Input Voltage VIL —1.30.8V
Input Current IIN –1 — 1 µA 0V VIN VDD
Input Voltage VIN -5 — VDD +0.3 V
Output
High Output Voltage VOH VDD – 0.025 — — V DC Test
Low Ou tput Voltage VOL — — 0.025 V DC Test
Output Re si stanc e, High ROH —1218IOUT =10mA, V
DD =18V
Output Re si stanc e, Low ROL —1016IOUT =10mA, V
DD =18V
Peak Output Current IPK —0.5—AV
DD 18V (Note 2)
Latch-Up Prote cti on
Withstand Reverse Current IREV — > 0.5 — A Duty cy cl e 2%, t 300 µs
Switching Time (Note 1)
Rise Time tR—1925nsFigure 4-1, Figure 4-2
CL= 470 pF
Fall Time tF—1520nsFigure 4-1, Figure 4-2
CL= 470 pF
Delay Time tD1 —3540nsFigure 4-1, Figure 4-2
Delay Time tD2 —3540nsFigure 4-1, Figure 4-2
Power Supply
Supply Voltage VDD 4.5 — 18.0 V
Power Supply Current IS— 0.85 1.1 mA VIN =3V
IS— 0.10 0.20 mA VIN =0V
Note 1: Switching times ensured by design.
2: Tested during characterization, not production tested.
MCP1401/02
DS20002052C-page 4 2007-2013 Microchip Technology Inc.
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V VDD 18V.
Parameters Sym. Min. Typ. Max. Units Conditions
Input
Logic ‘1’, High Input Voltage VIH 2.4 — — V
Logic ‘0’, Low Input Voltage VIL ——0.8V
Input Current IIN –10 — +10 µA 0V VIN VDD
Input Voltage VIN -5 — VDD +0.3 V
Output
High Output Voltage VOH VDD – 0.025 — — V DC TEST
Low Ou tput Voltage VOL — — 0.025 V DC TEST
Output Re si stanc e, High ROH —1618IOUT =10mA, V
DD =18V
Output Re si stanc e, Low ROL —1619IOUT =10mA, V
DD =18V
Switching Time (Note 1)
Rise Time tR—2030nsFigure 4-1, Figure 4-2
CL= 470 pF
Fall Time tF—1828nsFigure 4-1, Figure 4-2
CL= 470 pF
Delay Time tD1 —4051nsFigure 4-1, Figure 4-2
Delay Time tD2 —4051nsFigure 4-1, Figure 4-2
Power Supply
Supply Voltage VDD 4.5 — 18.0 V
Power Supply Current IS—0.901.10mAV
IN =3V
— 0.11 0.20 mA VIN =0V
Note 1: Switching times ensured by design.
2: Tested during characterization, not production tested.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V.
Parameters Sym. Min. Typ. Max. Units Conditions
Temperature Ranges
Specified Temperature Range TA–40 — +125 °C
Maximum Junction Temperature TJ——+150°C
Storage Temperature Range TA–65 — +150 °C
Package Thermal Resistances
Thermal Resistance, 5L-SOT-23 JA —220.7 — °C/W
2007-2013 Microchip Technology Inc. DS20002052C-page 5
MCP1401/02
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, TA= +25°C with 4.5V VDD 18V.
FIGURE 2-1: Rise Time vs. Supply
Voltage.
FIGURE 2-2: Rise Time vs. Capacitive
Load.
FIGURE 2-3: Rise and F all Times vs.
Temperature.
FIGURE 2-4: Fall Time vs. Supply
Voltage.
FIGURE 2-5: Fall Time vs. Capacitive
Load.
FIGURE 2-6: Propagation Delay vs. Input
Amplitude.
Note: The gra phs and table s pro vi ded following this note ar e a st a tis tic al sum ma ry ba sed on a limi ted number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0
50
100
150
200
250
300
350
4 6 8 1012141618
Supply Voltage (V)
Rise TIme (ns)
3300 pF
470 pF 100 pF
1000 pF
0
50
100
150
200
250
100 1000 10000
Capacitive Load (pF)
Rise Time (ns)
5V
18V
12V
10
14
18
22
26
30
34
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (oC)
Time (ns)
CLOAD = 470 pF
VDD = 12V
tFALL
tRISE
0
50
100
150
200
250
300
350
4 6 8 1012141618
Supply Voltage (V)
Fall Time (ns)
3300 pF
470 pF
100 pF
1000 pF
0
50
100
150
200
250
100 1000 10000
Capacitve Load (pF)
Fall Time (ns)
5V
18V
12V
36
37
38
39
40
41
42
43
44
45678910
Input Amplitude (V)
Propagation Delay (ns)
tD2
tD1
VDD= 12V
MCP1401/02
DS20002052C-page 6 2007-2013 Microchip Technology Inc.
Note: Unless otherwise indicated, TA= +25°C with 4.5V VDD 18V.
FIGURE 2-7: Propagation Delay Time vs.
Supply Voltage.
FIGURE 2-8: Propagation Delay Time vs.
Temperature.
FIGURE 2-9: Quiescent Current vs.
Supply Voltage.
FIGURE 2-10: Quiescent Current vs.
Temperature.
FIGURE 2-11: I nput Threshold vs. Supply
Voltage.
FIGURE 2-12: In put Threshold vs.
Temperature.
Note: Unless otherwise indicated, TA= +25°C with 4.5V VDD 18V.
30
40
50
60
70
80
4 6 8 10 12 14 16 18
Supply Voltage (V)
Propagation Delay (ns)
tD2
tD1
30
35
40
45
50
55
60
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (oC)
Propagation Delay (ns)
VDD = 12V
tD2
tD1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
4 6 8 10 12 14 16 18
Supply Voltage (V)
Quiescent Current (mA)
Input = 1
Input = 0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (oC)
Quiescent Current (mA)
VDD = 18V
Input = 1
Input = 0
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
4 6 8 10 12 14 16 18
Supply Voltage (V)
Input Threshold (V)
VLO
VHI
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (oC)
Input Threshold (V)
VDD = 12V
VLO
VHI
2007-2013 Microchip Technology Inc. DS20002052C-page 7
MCP1401/02
FIGURE 2-13: Supply Curr ent vs.
Capacitive Load .
FIGURE 2-14: Supply Curr ent vs.
Capacitive Load .
FIGURE 2-15: Supply Curr ent vs.
Capacitive Load .
FIGURE 2-16: Supply Current vs.
Frequency.
FIGURE 2-17: Supply Current vs.
Frequency.
FIGURE 2-18: Supply Current vs.
Frequency.
0
25
50
75
100
125
150
100 1000 10000
Capacitive Load (pF)
Supply Current (mA)
100 kHz
VDD = 18V 2 MHz
1 MHz
200 kHz
50 kHz
0
10
20
30
40
50
60
70
100 1000 10000
Capacitive Load (pF)
Supply Current (mA)
100 kHz
VDD = 12V 2 MHz
1 MHz
200 kHz
50 kHz
0
5
10
15
20
25
30
100 1000 10000
Capacitive Load (pF)
Supply Current (mA)
100 kHz
VDD = 6V 2 MHz
1 MHz
200 kHz
50 kHz
0
10
20
30
40
50
60
70
80
10 100 1000
Frequency (kHz)
Supply Current (mA)
VDD = 18V 6,800 pF
3,300 pF
1,000 pF
470 pF
100 pF
0
10
20
30
40
50
10 100 1000
Frequency (kHz)
Supply Voltage (V)
VDD = 12V 6,800 pF
3,300 pF
1,000 pF
470 pF
100 pF
0
5
10
15
20
25
10 100 1000
Frequency (kHz)
Supply Current (mA)
VDD = 6V 6,800 pF
3,300 pF
1,000 pF
470 pF
100 pF
MCP1401/02
DS20002052C-page 8 2007-2013 Microchip Technology Inc.
Note: Unless otherwise indicated, TA= +25°C with 4.5V VDD 18V.
FIGURE 2-19: Output Resistance (Output
High) vs. Supply Volt age.
FIGURE 2-20: Output Resistance (Output
Low) vs. Supply Voltage.
FIGURE 2-21: Crossover Energy vs.
Supply Voltage.
0
10
20
30
40
50
60
4 6 8 10 12 14 16 18
Supply Voltage (V)
ROUT-HI (mΩ)
VIN = 0V (MCP1401)
VIN = 5V (MCP1402)
TJ = +125oC
TJ = +25oC
5
10
15
20
25
30
35
40
45
50
4 6 8 1012141618
Supply Voltage (V)
ROUT-LO (mΩ)
VIN
= 5V (MCP1401)
VIN
= 0V (MCP1402)
TJ = +125oC
TJ = +25oC
1E-10
1E-9
1E-8
1E-7
4 6 8 10 12 14 16 18
Supply Voltage (V)
Crossover Energy (A*sec)
2007-2013 Microchip Technology Inc. DS20002052C-page 9
MCP1401/02
3.0 PIN DESCRIPTIONS
The description of the pins are listed in Table 3-1.
3.1 Supply Input (VDD)
VDD is the bias su pply input for the M OSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with a local capacitor . This bypass
capacitor provides a localized low-impedance path for
the peak currents that are to be provided to the load.
3.2 Control Input (IN)
The MOSFET driver input is a high-impedance, TTL/
CMOS-compatible input. The input also has hysteresis
betwee n the hig h and low i nput leve ls, allo wing the m to
be driven from slow rising and falling signals and to
provide noise immunity.
3.3 Ground (GND)
Ground is th e d ev ic e re turn pi n. The gro und pin sh ould
have a low-impedance connection to the bias supply
source return. High peak currents will flow out the
ground pin when the capacitive load is being
discharged.
3.4 Output (OUT, OUT)
The output is a CMOS push-pull output that is capable
of sourcing and sinking 0.5A of peak current
(VDD = 18V). The low output impedance ensures the
gate of the external MOSFET will stay in the intended
state even durin g large trans ient s. Th is out put also has
a reverse current latch-up rating of 0.5A.
TABLE 3-1: PIN FUNCTION TABLE(1)
Pin No. MCP1401 MCP1402 Description
1GNDGNDGround
2V
DD VDD Supply Input
3 IN IN Control Input
4GNDGNDGround
5OUTOUT Output
Note 1: Duplicate pins must be connected for proper operation.
MCP1401/02
DS20002052C-page 10 2007-2013 Microchip Technology Inc.
4.0 APPLICATION INFORMATION
4.1 General Information
MOSFET drivers are high-speed, high-current devices
which are intended to source/sink hi gh peak current s to
charge/discharge the gate capacitance of external
MOSFETs or IGBTs. In hi gh-frequency switc hing power
supplies, the PWM controller may not have the drive
capability to directly drive the power MOSFET. A
MOSFET driver like the MCP1401/02 family can be
used to provide additional source/sink current
capability.
4.2 MOSFET Driver Timing
The abilit y of a MOSFET drive r to transition from a full y
off state to a fully on state is characterized by the
driver’s rise time (tR), fall time (tF), and propagation
delays (tD1 and tD2). Th e MCP1401/0 2 family o f drivers
can typically charge and discharge a 470 pF load
capacitance in 19 ns, along with a typical matched
propagation delay of 35 ns. Figures 4-1 and 4-2 show
the test circuit and timing waveform used to verify the
MCP1401/02 timing.
FIGURE 4-1: Inverting Driver Timing
Waveform.
FIGURE 4-2: Non-Inverting Driver Timing
Waveform.
4.3 Decoupling Capacitors
Careful layout and decoupling capacitors are highly
recommended when using MOSFET drivers. Large
currents are required to charge and discharge
capacitive loads quickly. For example, approximately
550 mA are needed to charge a 470 pF load with 18V
in 15 ns.
To operate the MOSFET driver over a wide frequency
range with low supply impedance, it is recommended to
place a ceramic and low ESR film capacitor in parallel
between the driver VDD and GND. A 1.0 µF low ESR
film capacitor and a 0.1 µF ceramic capacitor placed
between pins 2 and 1 should be used. These
capacitors should be placed close to the driver to
minimize circuit board parasitics and provide a local
source for the required current.
4.4 PCB Layout Considerations
Proper Printed Circuit Board (PCB) layout is important
in a h igh-current, fas t switch ing circuit t o provid e proper
device operation and robustness of design. PCB trace
loop area and inductance should be minimized by the
use of ground planes or trace under MOSFET gate
drive signal s, sep arate ana log and power gro unds, an d
local driver decoupling.
Placing a ground plane beneath the MCP1401/02 will
help as a radiated n ois e s hi eld and i t w i ll prov ide som e
heat sinki ng for power dis si p a ted within the devic e.
0.1 µF
+5V
10%
90%
10%
90%
10%
90%
18V
1µF
0V
0V
MCP1401
CL= 470 pF
Input
Input
Output
tD1 tFtD2
Output
tR
VDD =18V
Ceramic
90%
Input
tD1 tF
tD2
Output tR
10%
10% 10%
+5V
18V
0V
0V
90%
90%
0.1 µF
1µF
MCP1402
CL= 470 pF
Input Output
VDD =18V
Ceramic
2007-2013 Microchip Technology Inc. DS20002052C-page 11
MCP1401/02
4.5 Power Dissipation
The tot al internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements.
EQUATION 4-1:
4.5.1 CAPACITIVE LOAD DISSIPATION
The power dissipation caused by a capacitive load is a
direct function of frequency, total capacitive load, and
supply voltage. The power lost in the MOSFET driver
for a complete charging and discharging cycle of a
MOSFET is shown in Equation 4-2.
EQUATION 4-2:
4.5.2 QUIESCENT POWER DISSIPATION
The power dissipation associated with the quiescent
current draw depends upon the state of the input pin.
The MCP1401/02 devices have a quiescent current
draw of 0.85 mA (typical) when the input is high and of
0.1 mA (typical) when the input is low. The quiescent
power dissipation is shown in Equation 4-3.
EQUATION 4-3:
4.5.3 OPERATI NG POWER DISSIPATION
The operating power dissipation occurs each time the
MOSFET driver output transitions because, for a very
short per iod of t ime, both MO SFETs in the o utput st age
are on simultaneously. This cross-conduction current
leads to a power dissip at ion d escrib ed in Equation 4-4.
EQUATION 4-4:
PTPLPQPCC
++=
Where:
PT= Total power dissipation
PL= Load power dissipation
PQ= Quiescent power dissipation
PCC = Operating power dissipation
PLfC
T
VDD2
=
Where:
f = Switching frequency
CT= Total load ca pacitance
VDD = MOSFET driver supply voltage
PQIQH DI
QL 1D–
+
VDD
=
Where:
IQH = Quiescent curren t in th e high
state
D = Duty cycle
IQL = Quiescent curren t in th e low
state
VDD = MOSFET driver supply voltage
PCC CC fVDD
=
Where:
CC = Cross-conduction constant
(A * sec)
f = Switching frequency
VDD = MOSFET driver supply voltage
MCP1401/02
DS20002052C-page 12 2007-2013 Microchip Technology Inc.
5.0 PACKAGING INFORMATION
5.1 Package Marking Information
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanu meric tracea bil ity code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-fr ee. The Pb- fre e JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the even t the full M icroc hip p art numb er cann ot be mark ed on one line, it w ill
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
Standard Markings for SOT-23
Part Number Code
MCP1401T-E/OT GYNN
MCP1402T-E/OT GZNN
5-Lead SOT-23 Example
GYNN
2007-2013 Microchip Technology Inc. DS20002052C-page 13
MCP1401/02
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MCP1401/02
DS20002052C-page 14 2007-2013 Microchip Technology Inc.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2007-2013 Microchip Technology Inc. DS20002052C-page 15
MCP1401/02
APPENDIX A: REVISION HISTORY
Revision C (September 2013)
The following is the list of modifications:
1. Updated values for Electrostatic Discharge
(ESD) protection in the Section “General
Description”.
2. Updated package drawings in Section 5.0
“Packaging Information”.
3. Updated ROH and ROL numbers in the “DC
Characteristics (Over Operating Tempera-
ture Range)” table.
Revision B (December 2007)
The following is the list of modifications:
1. Updated the low supply current values.
2. Updated Section 5.1 “Package Marking
Information”.
Revision A (June 2007)
• Original Releas e of th is Do cument.
MCP1401/02
DS20002052C-page 16 2007-2013 Microchip Technology Inc.
NOTES:
MCP1401/02
DS20002052C-page 17 2007-2013 Microchip Technology Inc.
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Device: MCP1401: 500 mA MOSFET Driver, Inverting
MCP1402: 500 mA MOSFET Driver, Non-Inverting
Tape and Reel: T = Tape and Reel
Temperature Range: E = -40°C to +125°C
Package: * OT = Plastic Thin Small Outline T ransistor (OT), 5-Lead
* All package offerings are Pb Free (Lead Free)
Examples:
a) MCP1401T-E/OT: 500 mA Inverting
MOSFET D r iv er,
5LD SOT-23 package.
a) MCP1402T-E/OT 500 mA Non-Inverting
MOSFET D r iv er,
5LD SOT-23 package.
PART NO. X X
TemperatureTape & Reel
Range
Device
XX
Package
Range
MCP1401/02
DS20002052C-page 18 2007-2013 Microchip Technology Inc.
NOTES:
2007-2013 Microchip Technology Inc. DS20002052C-page 19
Information contained in this publication regarding device
applications a nd the lik e is pro vid ed only for your c on ve nience
and may be supers eded by u pdates. It is y our res po ns i bil it y to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC 32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip T echnology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology I nc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM ,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONIT OR, FanSense, HI-TIDE, In-Circuit Seria l
Programm ing, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip T echnology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technolo gy Germ any II GmbH & Co . KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2007-2013, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-62077-467-0
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that it s family of products is one of the most secure families of it s kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is c onstantly evolving. We a t Microc hip are co m mitted to continuously improving the code prot ect ion featur es of our
products. Attempts to break Microchip’ s code protection feature may be a violation of the Digital Mill ennium Copyright Act. If such act s
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® co de hopping
devices, Serial EEPROMs, microperiph erals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT S
CERTIFIED BY DNV
== ISO/TS 16949 ==
DS20002052C-page 20 2007-2013 Microchip Technology Inc.
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