Visit our website: www.e2v.com
for the latest version of the datasheet
e2v semiconductors SAS 2006
AT84AD001B
Dual 8-bit 1 Gsps ADC
Datasheet
1. Features
•Dual ADC with 8-bit Resolution
•1 Gsps Sampling Rate per Channel, 2 Gsps in Interleaved Mode
•Single or 1:2 Demultiplexed Output
•LVDS Output Format (100Ω)
•500 mVpp Analog Input (Differential Only)
•Differential or Single-ended 50Ω PECL/LVDS Compatible Clock Inputs
•Power Supply: 3.3V (Analog), 3.3V (Digital), 2.25V (Output)
•LQFP144 or LQFP-ep 144L Green Packages
•Temperature Range:
– 0°C < Tamb < 70°C (Commercial Grade)
– -40°C < Tamb < 85°C (Industrial Grade)
•3-wire Serial Interface
– 16-bit Data, 3-bit Address
– 1:2 or 1:1 Output Demultiplexer Ratio Selection
– Full or Partial Standby Mode
– Analog Gain (± 1.5 dB) Digital Control
– Input Clock Selection
– Analog Input Switch Selection
– Binary or Gray Logical Outputs
– Synchronous Data Ready Reset
– Data Ready Delay Adjustable on Both Channels
– Interleaving Functions:
• Offset and Gain (Channel to Channel) Calibration
• Digital Fine SDA (Fine Sampling Delay Adjust) on One Channel
– Internal Static or Dynamic Built-In Test (BIT)
2. Performance
•Low Power Consumption: 0.7W Per Channel
•Power Consumption in Standby Mode: 120 mW
•1.5 GHz Full Power Input Bandwidth (-3 dB)
•SNR = 42 dB Typ (6.8 ENOB), THD = -51 dBc, SFDR = -54 dBc at Fs = 1 Gsps
Fin = 500 MHz
•2-tone IMD3: -54 dBc (499 MHz, 501 MHz) at 1 Gsps
•DNL = 0.25 LSB, INL = 0.5 LSB
•Low Bit Error Rate (10-13) at 1 Gsps
2
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
3. Application
•Digital Oscilloscopes
•Communication Receivers (I/Q)
•Direct RF Down Conversion
•High Speed Data Acquisition
•Radar/ECM
4. Description
The AT84AD001B is a monolithic dual 8-bit analog-to-digital converter, offering low 1.4W power con-
sumption and excellent digitizing accuracy. It integrates dual on-chip track/holds that provide an
enhanced dynamic performance with a sampling rate of up to 1 Gsps and an input frequency bandwidth
of over 1.5 GHz. The dual concept, the integrated demultiplexer and the easy interleaving mode make
this device user-friendly for all dual channel applications, such as direct RF conversion or data acquisi-
tion. The smart function of the 3-wire serial interface eliminates the need for external components, which
are usually necessary for gain and offset tuning and setting of other parameters, leading to space and
power reduction as well as system flexibility.
5. Functional Description
The AT84AD001B is a dual 8-bit 1 Gsps ADC based on advanced high-speed
BiCMOS technology.
Each ADC includes a front-end analog multiplexer followed by a Sample and Hold (S/H), and an 8-bit
flash-like architecture core analog-to-digital converter. The output data is followed by a switchable 1:1 or
1:2 demultiplexer and LVDS output buffers (100Ω).
Two over-range bits are provided for adjustment of the external gain control on each channel.
A 3-wire serial interface (3-bit address and 16-bit data) is included to provide several adjustments:
• Analog input range adjustment (±1.5 dB) with 8-bit data control using a 3-wire bus interface (steps of
0.18 dB)
• Analog input switch: both ADCs can convert the same analog input signal I or Q
• Gray or binary encoder output. Output format: DMUX 1:1 or 1:2 with control of the output frequency
on the data ready output signal
• Partial or full standby on channel I or channel Q
• Clock selection:
– Two independent clocks: CLKI and CLKQ
– One master clock (CLKI) with the same phase for channel I and channel Q
– One master clock but with two phases (CLKI for channel I and CLKIB for channel Q)
• ISA: Internal Settling Adjustment on channel I and channel Q
• FiSDA: Fine Sampling Delay Adjustment on channel Q
• Adjustable Data Ready Output Delay on both channels
• Test mode: decimation mode (by 16), Built-In Test
3
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
A calibration phase is provided to set the two DC offsets of channel I and channel Q close to code 127.5
and calibrate the two gains. The offset and gain error can also be set externally via the 3-wire serial
interface.
The AD84AD001B operates in fully differential mode from the analog inputs up to the digital outputs. The
AD84AD001B features a full-power input bandwidth of 1.5 GHz.
Figure 5-1. Simplified Block Diagram
DOIRI
DOIRIN
DOIRQ
DOIRQN
CLKI
Clock Buffer Divider
2 to16
DRDA
I
LVDS
Clock
Buffer
2CLKIO
DDRB
16 DOAI
DOAIN
8bit
ADC
I
DMUX
1:2
or
1:1
I
LVDS
Buffer
I
DoirI
INPUT
MUX
+
Vini
S/H 16 DOBI
DOBIN
Vinib 8
-2
Gain control I
Calibration
Gain/offset
ISA I DMUX control
BIT Data
Clock
Ldn
3-wire Serial Interface
3WSI
Input switch
Gain control Q
Calibration
Gain/offset
ISA Q & FiSDA
DMUX control Mode
2
DoirQ
LVDS
buffer
Q
8bit
ADC
Q
DMUX
1: 2
or
1: 1
Q
+
Vinq
S/H 16 DOAQ
DOAQN
Vinqb
-816 DOBQ
DOBQN
CLKQ
Clock Buffer Divider
2 to 16
DRDA
Q
LVDS
Clock
Buffer
2CLKQO
DDRB
4
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
6. Typical Applications
Figure 6-1. Satellite Receiver Application
Bandpass
Amplifier
11..12 GHz
Local oscillator
Bandpass
Amplifier
1..2 GHz
Low Noise Converter
(Connected to the Dish)
090
Local Oscillator
Synthesizer
1.5 … 2.5 GHz
I
Q
AT84AD001B
I
Q
Tunable
Band Filter
Control Functions:
Clock and Carrier
Recovery...
Clock
AGC
IF
Band Filter
Low Pass
Filter
Satellite Tuner
Demodulation
Dish
Satellite
Quadrature
I
Q
Q
5
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
Figure 6-2. Dual Channel Digital Oscilloscope Application
Note: Absolute maximum ratings are limiting values (referenced to GND = 0V), to be applied individually, while other parameters are
within specified operating conditions. Long exposure to maximum ratings may affect device reliability.
DAC
Gain
DAC
Offset
DAC
Offset
DAC
Gain
ADC B
ADC A
Timing
circuit
FISO
RAM
Display
Analog switch
Channel Mode
Selection
µP
Clock
selection
DACs
DACs
Smart dual
ADC
A
A
Channel B
Channel A
Table 6-1. Absolute Maximum Ratings
Parameter Symbol Value Unit
Analog positive supply voltage VCCA 3.6 V
Digital positive supply voltage VCCD 3.6 V
Output supply voltage VCCO 3.6 V
Maximum difference between VCCA and VCCD VCCA to VCCD ± 0.8 V
Minimum VCCO VCCO 1.6 V
Analog input voltage VINI or VINIB
VINQ or VINQB
1/-1 V
Digital input voltage VD-0.4 to VCCD + 0.4 V
Clock input voltage VCLK or VCLKB -0.4 to VCCD + 0.4 V
Maximum difference between VCLK and VCLKB VCLK - VCLKB -2 to 2 V
Maximum junction temperature TJ125 °C
Storage temperature Tstg -65 to 150 °C
Lead temperature (soldering 10s) Tleads 300 °C
6
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
7. Electrical Operating Characteristics
Unless otherwise specified:
•V
CCA = 3.3V; VCCD = 3.3V; VCCO = 2.25V
•V
INI - VINB or VINQ - VINQB = 500 mVpp full-scale differential input
• LVDS digital outputs (100Ω)
•T
amb (typical) = 25°C
• Full temperature range: 0°C < Tamb < 70°C (commercial grade) )
Table 6-2. Recommended Conditions of Use
Parameter Symbol Comments Recommended Value Unit
Analog supply voltage VCCA 3.3 V
Digital supply voltage VCCD 3.3 V
Output supply voltage VCCO 2.25 V
Differential analog input voltage (full-scale) VINi -VIniB or
VINQ -VINQB
500 mVpp
Differential clock input level Vinclk 600 mVpp
Internal Settling Adjustment (ISA) with a 3-wire
serial interface for channel I and channel Q ISA -50 ps
Operating temperature range TAmbient
Commercial grade
Industrial grade
0 < Tamb < 70
-40 < Tamb < 85 °C
Table 7-1. Electrical Operating Characteristics in Nominal Conditions
Parameter Symbol Min Typ Max Unit
Resolution 8Bits
Power Requirements
Positive supply voltage
- Analog
- Digital
Output digital (LVDS) and serial interface
VCCA
VCCD
VCCO
3.15
3.15
2.0
3.3
3.3
2.25
3.45
3.45
2.5
V
V
V
Supply current (typical conditions)
- Analog
- Digital
- Output
ICCA
ICCD
ICCO
150
230
100
180
275
120
mA
mA
mA
Supply current (1:2 DMUX mode)
- Analog
- Digital
- Output
ICCA
ICCD
ICCO
150
260
175
180
310
210
mA
mA
Supply current (2 input clocks, 1:2 DMUX mode)
- Analog
- Digital
- Output
ICCA
ICCD
ICCO
150
290
180
180
350
215
mA
7
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
Supply current
(1 channel only, 1:1 DMUX mode)
- Analog
- Digital
- Output
ICCA
ICCD
ICCO
80
160
55
95
190
65
mA
mA
mA
Supply current
(1 channel only, 1:2 DMUX mode)
- Analog
- Digital
- Output
ICCA
ICCD
ICCO
80
170
90
95
205
110
mA
mA
mA
Supply current (full standby mode)
- Analog
- Digital
- Output
ICCA
ICCD
ICCO
12
24
3
20
39
7
mA
mA
mA
Nominal dissipation
(1 clock, 1:1 DMUX mode, 2 channels) PD1.4 1.7 W
Nominal dissipation (full standby mode) stbpd 120 mW
Analog Inputs
Full-scale differential analog input voltage to
obtain full scale with no gain adjust (mode 0)
VINi - VIniB
or
VINQ - VINQB
450 500 550
mV
mV
Analog input capacitance I and Q CIN 2pF
Full power input bandwidth (-3 dB) FPBW 1.5 GHz
Gain flatness (-0.5 dB) 500 MHz
Clock Input
Logic compatibility for clock inputs and
DDRB reset (pins 124,125,126,127,128,129) PECL/ECL/LVDS
PECL/LVDS clock inputs and DDRB input
voltages
(VCLKI/IN or VCLKQ/QN)
Differential logical level
VIL - VIH 600 mV
Clock input and DDRB input power level -9 0 6 dBm
Clock input capacitance 2 pF
Digital Outputs
Logic compatibility for digital outputs
(depending on the value of VCCO)LVDS
Differential output voltage swings
(assuming VCCO = 2.25V) VOD 220 270 350 mV
Output levels (assuming VCCO = 2.25V)
100Ω differentially terminated
Logic 0 voltage
Logic 1 voltage
VOL
VOH
1.0
1.25
1.1
1.35
1.2
1.48
V
V
Table 7-1. Electrical Operating Characteristics in Nominal Conditions (Continued)
Parameter Symbol Min Typ Max Unit
8
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
Note: The gain setting is 0 dB, one clock input, no standby mode [full power mode], 1:1 DMUX, calibration off.
Note: Gain setting is 0 dB, two clock inputs, no standby mode [full power mode], 1:2 DMUX, calibration on.
Output offset voltage (assuming VCCO = 2.25V)
100Ω differentially terminated VOS 1125 1250 1340 mV
Output impedance RO50 W
Output current (shorted output) 12 mA
Output current (grounded output) 30 mA
Output level drift with temperature 1.3 mV/°C
Digital Input (Serial Interface)
Maximum clock frequency (input clk) Fclk 50 MHz
Input logical level 0 (clk, mode, data, ldn) -0.4 0 0.4 V
Input logical level 1 (clk, mode, data, ldn) VCCO - 0.4 VCCO - 0.4 VCCO + 0.4 V
Output logical level 0 (cal) -0.4 0 0.4 V
Output logical level 1 (cal) VCCO - 0.4 VCCO VCCO + 0.4 V
Maximum output load (cal) 15 pF
Table 7-2. Electrical Operating Characteristics
Parameter Symbol Min Typ Max Unit
DC Accuracy
No missing code Guaranteed over specified temperature range
Differential non-linearity DNL 0.25 0.6 LSB
Integral non-linearity INL 0.5 1 LSB
Gain error (single channel I or Q) with calibration -2 0 2 %
Input offset matching (single channel I or Q) with calibration -2 0 2 LSB
Gain error drift against temperature
Gain error drift against VCCA
0.062
0.064
LSB/°C
LSB/mV
Mean output offset code with calibration 126 127.5 129 LSB
Transient Performance
Bit Error Rate
Fs = 1 Gsps
Fin = 250 MHz
BER 10-13 Error/
sample
ADC settling time channel I or Q
(between 10% - 90% of output response)
VIni -ViniB = 500 mVpp
TS 170 ps
Table 7-1. Electrical Operating Characteristics in Nominal Conditions (Continued)
Parameter Symbol Min Typ Max Unit
9
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
Notes: 1. Differential input [-1 dBFS analog input level], gain setting is 0 dB, two input clock signals, no standby mode,
1:1 DMUX, ISA = -50 ps.
2. Measured on the AT84AD001TD-EB Evaluation Board.
Table 7-3. AC Performances
Parameter Symbol Min Typ Max Unit
AC Performance
Signal-to-noise Ratio
Fs = 1 GspsFin = 20 MHz
SNR
42 45 dBc
Fs = 1 GspsFin = 500 MHz 40 42 dBc
Fs = 1 Gsps Fin = 1 GHz 41 dBc
Effective Number of Bits
Fs = 1 Gsps Fin = 20 MHz
ENOB
77.2 Bits
Fs = 1 Gsps Fin = 500 MHz 6.5 6.8 Bits
Fs = 1 Gsps Fin = 1 GHz 6.4 Bits
Total Harmonic Distortion (First 9 Harmonics)
Fs = 1 Gsps Fin = 20 MHz
|THD|
48 55 dBc
Fs = 1 Gsps Fin = 500 MHz 45 51 dBc
Fs = 1 Gsps Fin = 1 GHz 45 dBc
Spurious Free Dynamic Range
Fs = 1 Gsps Fin = 20 MHz
|SFDR|
50 56 dBc
Fs = 1 Gsps Fin = 500 MHz 48 54 dBc
Fs = 1 Gsps Fin = 1 GHz 50 dBc
Two-tone Inter-modulation Distortion (Single Channel)
FIN1 = 499 MHz , FIN2 = 501 MHz at Fs = 1 Gsps IMD -54 dBc
Band flatness from DC up to 600 MHz ±0.5 dB
Phase matching using auto-calibration and FiSDA
in interleaved mode (channel I and Q)
Fin = 250 MHz
Fs = 1 Gsps
dϕ-0.7 0 0.7 °
Crosstalk channel I versus channel Q
Fin = 250 MHz, Fs = 1 Gsps(2) Cr -55 dB
10
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
Note: One analog input on both cores, clock I samples the analog input on the rising and falling edges. The calibration phase is nec-
essary. The gain setting is 0 dB, one input clock I, no standby mode, 1:1 DMUX, FiSDA adjustment.
Table 7-4. AC Performances over Full Industrial Temperature Range (-40°C < Tamb < 85°C)
Parameter Symbol Min Typ Max Unit
AC Performance
Signal-to-noise Ratio
Fs = 1 Gsps Fin = 500 MHz 39 42 dBc
Effective Number of Bits
Fs = 1 Gsps Fin = 500 MHz 6.3 6.8 Bits
Total Harmonic Distortion (First 9 Harmonics)
Fs = 1 Gsps Fin = 500 MHz 39 51 dBc
Spurious Free Dynamic Range
Fs = 1 Gsps Fin = 500 MHz 42 54 dBc
Table 7-5. AC Performances in Interleaved Mode
Parameter Symbol Min Typ Max Unit
Interleaved Mode
Maximum equivalent clock frequency Fint = 2 × Fs
Where Fs = external clock frequency Fint 2Gsps
Minimum clock frequency Fint 20 Msps
Differential non-linearity in Interleaved mode intDNL 0.25 LSB
Integral non-linearity in Interleaved mode intINL 0.5 LSB
Signal-to-noise Ratio in Interleaved Mode
Fint = 2 GspsFin = 20 MHz iSNR 42 dBc
Fint = 2 GspsFin = 250 MHz 40 dBc
Effective Number of Bits in Interleaved Mode
Fint = 2 GspsFin = 20 MHz iENOB 7.1 Bits
Fint = 2 GspsFin = 250 MHz 6.8 Bits
Total Harmonic Distortion in Interleaved Mode
Fint = 2 GspsFin = 20 MHz |iTHD| 52 dBc
Fint = 2 GspsFin = 250 MHz 49 dBc
Spurious Free Dynamic Range in Interleaved Mode
Fint = 2 GspsFin = 20 MHz |iSFDR| 54 dBc
Fint = 2 GspsFin = 250 MHz 52 dBc
Two-tone Inter-modulation Distortion (Single Channel) in Interleaved Mode
FIN1 = 249 MHz , FIN2 = 251 MHz at Fint = 2 Gsps iIMD -54 dBc
11
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
Note: All timing characteristics are specified at ambient temperature but also apply to the specified temperature range (the variation
over the specified temperature range is negligible).
Table 7-6. Switching Performances
Parameter Symbol Min Typ Max Unit
Switching Performance and Characteristics - See “Timing Diagrams” on page 12.
Maximum operating clock frequency FS1 Gsps
Maximum operating clock frequency in BIT and
decimation modes
FS
(BIT, DEC) 750 Msps
Minimum clock frequency (no transparent mode) FS
10 Msps
Minimum clock frequency (with transparent mode) 1 Ksps
Minimum clock pulse width [high]
(No transparent mode) TC1 0.4 0.5 50 ns
Minimum clock pulse width [low]
(No transparent mode) TC2 0.4 0.5 50 ns
Aperture delay: nominal mode with ISA & FiSDA TA 1 ns
Aperture uncertainty Jitter 0.4 ps (rms)
Data output delay between input clock and data TDO 3.8 ns
Data Ready Output Delay TDR 3 ns
Data Ready Reset to Data Ready TRDR 2 ns
Data Output Delay with Data Ready TD2 1/2 Fs
+Tdrda ps
Data Ready (CLKO) Delay Adjust (140 ps steps) Tdrda range -560 to 420 ps
Output skew 50 100 ps
Output rise/fall time for DATA (20% - 80%) TR/TF 300 350 500 ps
Output rise/fall time for DATA READY (20% - 80%) TR/TF 300 350 500 ps
Data pipeline delay (nominal mode)
TPD
3 (port B)
3.5 (port A, 1:1 DMUX mode)
4 (port A, 1:2 DMUX mode) Clock cycles
Data pipeline delay (nominal mode) in S/H
transparent mode
2.5 (port B)
3 (port A, 1:1 DMUX mode)
3.5 (port A, 1:2 DMUX mode)
DDRB recommended pulse width 1 ns
12
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
Figure 7-1. Differential Inputs Voltage Span (Full-scale)
The analog input full-scale range is 0.5V peak- to-peak (Vpp), or -2 dBm into the 50Ω (100Ω differential)
termination resistor. In differential mode input configuration, this means 0.25V on each input, or ±125 mV
around common mode voltage.
7.1 Timing Diagrams
Figure 7-2. Timing Diagram, ADC I or ADC Q, 1:2 DMUX Mode, Clock I for ADC I, Clock Q for ADC Q
mV
+125
-125
500 mV
Full-scale
Analog Input
t
VIN VINB
+250 mV
-250 mV
0V
CLKOI or CLKOQ
(= CLKI/4)
CLKI or CLKQ
CLKOI or CLKOQ
(= CLKI/2)
Programmable delay
VIN
TA
N
N + 1 N + 2
N + 3
Pipeline delay = 4 clock cycles TDO
TD2
DOIA[0:7]
or DOQA[0:7]
N - 2
N - 4 N
DOIB[0:7]
or DOQB[0:7]
Pipeline delay = 3 clock cycles TDO
N - 3 N - 1 N +1
Address: D7 D6 D5 D4 D3 D2 D1 D0
1 1 X X 1 X 0 0
13
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
Figure 7-3. 1:1 DMUX Mode, Clock I = ADC I, Clock Q = ADC Q
Figure 7-4. 1:2 DMUX Mode, Clock I = ADC I, Clock I = ADC Q
CLKI or CLKQ
CLKOI or CLKOQ
VIN
TA
N
N + 1 N + 2 N + 3
Pipeline delay = 3.5 clock cycles TDO
DOIA[0:7]
or DOQA[0:7]
N - 1
N - 3 N + 1
N - 2 N
DOIB[0:7] and DOQB[0:7] are high impedance
Address: D7 D6 D5 D4 D3 D2 D1 D0
1 1 X X 0 X 0 0
CLKOI
(= CLKI/4)
CLKI
CLKOI
(= CLKI/2)
VIN
TA
N
N + 1 N + 2 N + 3
Pipeline delay = 4 clock cycles TDO
TD2
DOIA[0:7]
NI - 2
NI - 4 NI
DOIB[0:7]
Pipeline delay = 3 clock cycles TDO
NI - 3 NI - 1 NI +1
Address: D7 D6 D5 D4 D3 D2 D1 D0
1 0 X X 1 X 0 0
NQ - 4 NQ - 2 NQ
NQ - 3 NQ - 1 NQ +1
DOQA[0:7]
DOQB[0:7]
CLKOQ is high impedance
14
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
Figure 7-5. 1:1 DMUX Mode, Clock I = ADC I, Clock I = ADC Q
DOIB[0:7] and DOQB[0:7] are high impedance
CLKOQ is hi
g
h im
p
edance
CLKI
CLKOI
VIN
TA
N
N + 1 N + 2
N + 3
Pipeline delay = 3.5 clock cycles TDO
DOIA[0:7]
DOQA[0:7]
N - 1
N - 3 N + 1
N - 2 N
N - 1
N - 3 N + 1
N - 2 N
Address: D7 D6 D5 D4 D3 D2 D1 D0
1 0 X X 0 X 0 0
15
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
Figure 7-6. 1:2 DMUX Mode, Clock I = ADC I, Clock IN = ADC Q
CLKI
CLKOI
(= CLKI/2)
VIN
TA
NN + 1
N + 4 N + 6
Pipeline delay = 4 clock cycles TDO
TD2
DOQA[0:7]
N - 4
N - 8 N
DOQB[0:7]
Pipeline delay = 3 clock cycles TDO
N - 6 N - 2 N + 2
Address: D7 D6 D5 D4 D3 D2 D1 D0
0 X X X 1 X 0 0
N - 7 N - 3 N + 1
N - 5 N - 1 N + 3
DOIA[0:7]
DOIB[0:7]
CLKOQ is high impedance
CLKIN
Pipeline delay = 3.5 clock cycles TDO
N + 2
N + 3
N + 5
CLKOI
(= CLKI/4)
16
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
Figure 7-7. 1:1 DMUX Mode, Clock I = ADC I, Clock IN = ADC Q
Figure 7-8. 1:1 DMUX Mode, Decimation Mode Test (1:16 Factor)
Notes: 1. The maximum clock input frequency in decimation mode is 750 Msps.
2. Frequency(CLKOI) = Frequency(Data) = Frequency(CLKI)/16.
CLKI
CLKOI
(= CLKI/2)
VIN
TA
NN + 1
N + 4 N + 6
Pipeline delay = 3.5 clock cycles TDO
DOQA[0:7]
Address: D7 D6 D5 D4 D3 D2 D1 D0
0 X X X 0 X 0 0
DOIA[0:7]
DOIB[0:7] and DOQB[0:7] are high impedance
CLKOQ is high impedance
CLKIN
N + 2
N + 3
N + 5
N - 2
N - 6 N + 2
N - 4 N
N - 1
N - 5 N + 3
N - 3 N + 1
Pipeline delay = 3 clock cycles TDO
VIN
N - 16 NN + 16 N + 32
CLKI
16 clock cycles
CLKOI
DOIA[0:7]
N + 16 N + 32 N + 48
N - 16 N
DOQA[0:7]
N + 16 N + 32 N + 48
N - 16 N
Address: D7 D6 D5 D4 D3 D2 D1 D0
1 0 X X 0 X 0 0
DOIB[0:7] and DOQB[0:7] are high impedance
CLKOQ is high impedance
17
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
Figure 7-9. Data Ready Reset
Figure 7-10. Data Ready Reset 1:1 DMUX Mode
Note: The Data Ready Reset is taken into account only 2 ns after it is asserted. The output clock first completes
its cycle (if the reset occurs when it is high, it goes low only when its half cycle is complete; if the reset
occurs when it is low, it remains low) and then only, remains in reset state (frozen to a low level in 1:1
DMUX mode). The next falling edge of the input clock after reset makes the output clock return to normal
mode (after TDR).
DDRB
CLKI or
CLKQ
500 ps
ALLOWED ALLOWED
FORBIDDENFORBIDDEN
1 ns min
500 ps
1 ns min
CLKI or
CLKQ
CLKOI or
CLKOQ
DOIA[0:7] or
DOQA[0:7]
VIN
TA
N
N
DDRB
2 ns
TDR
TDR
Pipeline Delay + TDO
Clock in
Reset
N + 1
18
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
Figure 7-11. Data Ready Reset 1:2 DMUX Mode
Notes: 1. In 1:2 DMUX, Fs/2 mode:
The Data Ready Reset is taken into account only 2 ns after it is asserted. The output clock first com-
pletes its cycle (if the reset occurs when it is low, it goes high only when its half cycle is complete; if the
reset occurs when it is high, it remains high) and then only, remains in reset state (frozen to a high level
in 1:2 DMUX Fs/2 mode). The next rising edge of the input clock after reset makes the output clock
return to normal mode (after TDR).
2. In 1:2 DMUX, Fs/4 mode:
The Data Ready Reset is taken into account only 2 ns after it is asserted. The output clock first com-
pletes its cycle (if the reset occurs when it is high, it goes low only when its half cycle is complete; if the
reset occurs when it is low, it remains low) and then only, remains in reset state (frozen to a low level in
1:2 DMUX Fs/4 mode). The next rising edge of the input clock after reset makes the output clock return
to normal mode (after TDR).
CLKI or
CLKQ
CLKOI or CLKOQ
(= CLKI/2)
DOIA[0:7] or
DOQA[0:7]
VIN
TA
N
N
DDRB
Pipeline Delay + TDO
N + 1
2 ns
DOIB[0:7] or
DOQB[0:7]
N + 1
CLKOI or CLKOQ
(= CLKI/4)
1 ns min
TDR
TDR
TDR + 2 cycles
TDR + 2 cycles
Clock in
Reset
19
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
7.2 Functions Description
Table 7-7. Description of Functions
Name Function
VCCA Positive analog power supply
VCCD Positive digital power supply
VCCO Positive output power supply
GNDA Analog ground
GNDD Digital ground
GNDO Output ground
VINI, VINIB Differential analog inputs I
VINQ, VINQB Differential analog inputs Q
CLKOI, CLKOIN, CLKOQ,
CLKOQN
Differential output data ready I
and Q
CLKI, CLKIN, CLKQ, CLKQN Differential clock inputs I and Q
DDRB, DDRBN Synchronous data ready reset
I and Q
Mode Bit selection for 3-wire bus or
nominal setting
Clk Input clock for 3-wire bus
interface
Data Input data for 3-wire bus
Ldn Beginning and end of register
line for 3-wire bus interface
DOIRI, DOIRIN DOIRQ,
DOIRQN
Differential output IN range
data I and Q
<D0AI0:DOAI7>
<D0AI0N:DOAI7N>
<D0BI0:DOBI7>
<D0BI0N:DOBI7N>
Differential output data port
channel I
VtestQ Test voltage output for ADC Q
(to be left open)
VtestI Test voltage output for ADC I
(to be left open)
<D0AQ0:DOAQ7>
<D0AQ0N:DOAQ7N>
<D0BQ0:DOBQ7>
<D0BQ0N:DOBQ7N>
Differential output data port
channel Q
Cal Output bit status internal
calibration
Vdiode Test diode voltage for Tj
measurement
VINI
VINIB
CLKI
CLKIB
D0AI0
DOAI7
D0AI0N
DOAI7N
D0BI0
DOBI7
D0BI0N
DOBI7N
32
GNDD
VCCA = 3.3V
AT84AD001B
GNDO
GNDA
VINQ
VINQB
VCCD = 3.3V VCCO = 2.25V
D0AQ0
DOAQ7
D0AQ0
DOAQ7
DOBQ0
DOQBQ7
DOBQ0N
DOQBQ7N
32
DOIRI, DOIRIN
DOIRQ, DOIRQN
4
CLOCKOI, CLOCKOIB
CLOCKOQ, CLOCKOQB
4
CLKQ
CLKQB
mode dataclk ldn
VtestI
VtestQ
2
Vdiode
20
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
7.3 Digital Output Coding (Nominal Settings)
8. Pin Description
Table 7-8. Digital Output Coding (Nominal Setting)
Differential
Analog Input Voltage Level
Digital Output
I or Q (Binary Coding) Out-of-range Bit
> 250 mV > Positive full-scale + 1/2 LSB 1 1 1 1 1 1 1 1 1
250 mV
248 mV
Positive full-scale + 1/2 LSB
Positive full-scale - 1/2 LSB
1 1 1 1 1 1 1 1
1 1 1 1 1 1 1 0
0
0
1 mV
-1 mV
Bipolar zero + 1/2 LSB
Bipolar zero - 1/2 LSB
1 0 0 0 0 0 0 0
0 1 1 1 1 1 1 1
0
0
-248 mV
-250 mV
Negative full-scale + 1/2 LSB
Negative full-scale - 1/2 LSB
0 0 0 0 0 0 0 1
0 0 0 0 0 0 0 0
0
0
< -250 mV < Negative full-scale - 1/2 LSB 0 0 0 0 0 0 0 0 1
Table 8-1. AT84AD001B Pin Description
Symbol Pin number Function
GNDA, GNDD, GNDO
10, 12, 22, 24, 36, 38, 40, 42, 44, 46, 51,
54, 59, 61, 63, 65, 67, 69, 85, 87, 97, 99,
109, 111, 130, 142, 144
Ground pins. To be connected to external
ground plane
VCCA 41, 43, 45, 60, 62, 64 Analog positive supply: 3.3V typical
VCCD
9, 21, 37, 39, 66, 68, 88, 100, 112, 123,
141 3.3V digital supply
VCCO 11, 23, 86, 98, 110, 143 2.25V output and 3-wire serial interface
supply
VINI 57, 58
In-phase (+) analog input signal of the
sample & hold differential preamplifier
channel I
VINIB 55, 56 Inverted phase (-) of analog input signal
(VINI)
VINQ 47, 48
In-phase (+) analog input signal of the
sample & hold differential preamplifier
channel Q
VINQB 49, 50 Inverted phase (-) of analog input signal
(VINQ)
CLKI 124 In-phase (+) clock input signal
CLKIN 125 Inverted phase (-) clock input signal
(CLKI)
CLKQ 129 In-phase (+) clock input signal
21
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
CLKQN 128 Inverted phase (-) clock input signal
(CLKQ)
DDRB 126 Synchronous data ready reset I and Q
DDRBN 127 Inverted phase (-) of input signal (DDRB)
DOAI0, DOAI1, DOAI2, DOAI3, DOAI4,
DOAI5, DOAI6, DOAI7 117, 113, 105, 101, 93, 89, 81, 77
In-phase (+) digital outputs first phase
demultiplexer (channel I) DOAI0 is the
LSB. D0AI7 is the MSB
DOAI0N, DOAI1N, DOAI2N, DOAI3N,
DOAI4N, DOAI5N, DOAI6N, DOAI7N, 118, 114, 106, 102, 94, 90, 82, 78
Inverted phase (-) digital outputs first
phase demultiplexer (channel I) DOAI0N
is the LSB. D0AI7N is the MSB
DOBI0, DOBI1, DOBI2, DOBI3, DOBI4,
DOBI5, DOBI6, DOBI7 119, 115, 107, 103, 95, 91, 83, 79
In-phase (+) digital outputs second phase
demultiplexer (channel I) DOBI0 is the
LSB. D0BI7 is the MSB
DOBI0N, DOBI1N, DOBI2N, DOBI3N,
DOBI4N, DOBI5N, DOBI6N, DOBI7N 120, 116, 108, 104, 96, 92, 84, 80
Inverted phase (-) digital outputs second
phase demultiplexer (channel I) DOBI0N
is the LSB. D0BI7N is the MSB
DOAQ0, DOAQ1, DOAQ2, DOAQ3,
DOAQ4, DOAQ5, DOAQ6, DOAQ7 136, 140, 4, 8, 16, 20, 28, 32
In-phase (+) digital outputs first phase
demultiplexer (channel Q) DOAI0 is the
LSB. D0AQ7 is the MSB
DOAQ0N, DOAQ1N, DOAQ2N, DOAQ3N,
DOAQ4N, DOAQ5N, DOAQ6N, DOAQ7N 135, 139, 3, 7, 15, 19, 27, 31
Inverted phase (-) digital outputs first
phase demultiplexer (channel Q) DOAI0N
is the LSB. D0AQ7N is the MSB
DOBQ0, DOBQ1, DOBQ2, DOBQ3,
DOBQ4, DOBQ5, DOBQ6, DOBQ7 134, 138, 2, 6, 14, 18, 26, 30
In-phase (+) digital outputs second phase
demultiplexer (channel Q) DOBQ0 is the
LSB. D0BQ7 is the MSB
DOBQ0N, DOBQ1N, DOBQ2N,
DOBQ3N, DOBQ4N, DOBQ5N,
DOBQ6N, DOBQ7N
133, 137, 1 ,5, 13, 17, 25, 29
Inverted phase (-) digital outputs second
phase demultiplexer (channel Q)
DOBQ0N is the LSB. D0BQ7N is the MSB
DOIRI 75
In-phase (+) out-of-range bit input
(I phase) combined demultiplexer
out-of-range is high on the leading edge of
code 0 and code 256
DOIRIN 76 Inverted phase of output signal DOIRI
DOIRQ 34
In-phase (+) out-of-range bit input
(Q phase) combined demultiplexer
out-of-range is high on the leading edge of
code 0 and code 256
DOIRQN 33 Inverted phase of output signal DOIRQ
MODE 74 Bit selection for 3-wire bus interface or
nominal setting
CLK 73 Input clock for 3-wire bus interface
DATA 72 Input data for 3-wire bus
LND 71 Beginning and end of register line for
3- wire bus interface
Table 8-1. AT84AD001B Pin Description (Continued)
Symbol Pin number Function
22
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
Figure 8-1. AT84AD001B Pinout (Top View)
CLKOI 121 Output clock in-phase (+) channel I
CLKOIN 122 Inverted phase (-) output clock channel I
CLKOQ 132 Output clock in-phase (+) channel Q,
1/2 input clock frequency
CLKOQN 131 Inverted phase (-) output clock channel Q
VtestQ, VtestI 52, 53 Pins for internal test (to be left open)
Cal 70 Calibration output bit status
Voided 35 Positive node of diode used for die
junction temperature measurements
Table 8-1. AT84AD001B Pin Description (Continued)
Symbol Pin number Function
LQFP 144
20 by 20 by 1.4 mm
Dual 8-bit
23
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
9. Typical Characterization Results
Nominal conditions (unless otherwise specified):
•V
CCA = 3.3V; VCCD = 3.3V; VCCO = 2.25V
•V
INI - VINB or VINQ to VINQB = 500 mVpp full-scale differential input
• LVDS digital outputs (100Ω)
• TA (typical) = 25°C
• Full temperature range: 0°C < TA < 70°C (commercial grade) or -40°C
< TA < 85°C (industrial grade)
9.1 Typical Full Power Input Bandwidth
• Fs = 500 Msps
• Pclock = 0 dBm
•Pin = -1 dBFS
• Gain flatness (±0.5 dB) from DC to > 500 MHz
• Full power input bandwidth at -3 dB > 1.5 GHz
Figure 9-1. Full Power Input Bandwidth
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
100 300 500 700 900 1100 1300 1500 1700 1900 2100 2300 2500 2700 2900
Fin (MHz)
dBFS
-3 dB Bandwidth
24
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
9.2 Typical Crosstalk
Figure 9-2. Crosstalk (Fs = 500 Msps)
Note: Measured on the AT84AD001TD-EB Evaluation Board.
9.3 Typical DC, INL and DNL Patterns
1:2 DMUX mode, Fs/4 DR type
Figure 9-3. Typical INL (Fs = 50 Msps, Fin = 1 MHz, Saturated Input)
0.00
10.00
20.00
30.00
40.00
50.00
60.00
70.00
80.00
0 100 200 300 400 500 600 700 800 900 1000
Fin(MHz)
dBc
-0,6
-0,4
-0,2
0
0,2
0,4
0,6
1 16 31 46 61 76 91 106 121 136 151 166 181 196 211 226 241 256
Codes
INL (L sb)
25
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
Figure 9-4. Typical DNL (Fs = 50 Msps, Fin = 1 MHz, Saturated Input)
9.4 Typical Step Response
Figure 9-5. Step Response
•Fs = 1 Gsps
• Pclock = 0 dBm
• Fin = 100 MHz
•Pin = -1 dBFS
-0,3
-0,2
-0,1
0
0,1
0,2
0,3
1 16 31 46 61 76 91 106 121 136 151 166 181 196 211 226 241 256
Codes
DNL (Lsb)
0
50
100
150
200
250
2.4E-12 1.3E-09 2.5E-09 3.8E-09 5.0E-09 6.3E-09 7.5E-09 8.8E-09
Time (s)
Codes
Channel IA Channel QA
26
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
Figure 9-6. Step Response (Zoom)
•Fs = 1 Gsps
• Pclock = 0 dBm
• Fin = 500 MHz
•Pin = -1 dBFS
Figure 9-7. Step Response
0
50
100
150
200
250
4.9E-09 6.1E-09 7.4E-09 Time (s)
Codes
Channel IA Channel QA
10%
90%
Tr = 160 ps
0
50
100
150
200
250
4.9E-13 2.5E-10 5.0E-10 7.5E-10 1.0E-09 1.3E-09 1.5E-09 1.8E-09
Time (s)
Codes
Channel IA Channel QA
27
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
Figure 9-8. Step Response (Zoom)
9.5 Typical Dynamic Performances Versus Sampling Frequency
Figure 9-9. ENOB Versus Sampling Frequency in Nyquist Conditions (Fin = Fs/2)
Figure 9-10. SFDR Versus Sampling Frequency in Nyquist Conditions (Fin = Fs/2)
0
50
100
150
200
250
9.8E-10 1.2E-09 1.5E-09
T
ime
(
s
)
C
odes
Channel IA Channel QA
10%
90%
Tr = 170 ps
6.0
6.2
6.4
6.6
6.8
7.0
7.2
7.4
7.6
100 200 300 400 500 600 700 800 900 1000 1100
Fs (Msps)
ENOB (Bit)
-65
-62
-59
-56
-53
-50
100 300 500 700 900 1100
Fs (Msps)
SFDR (dBc)
28
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
Figure 9-11. THD Versus Sampling Frequency in Nyquist Conditions (Fin = Fs/2)
Figure 9-12. SNR Versus Sampling Frequency in Nyquist Conditions (Fin = Fs/2)
-60
-58
-56
-54
-52
-50
-48
100 300 500 700 900 1100
Fs (Msps)
THD (dBc)
40
41
42
43
44
45
100 300 500 700 900 1100
Fs (Msps)
SNR (dBc)
29
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
9.6 Typical Dynamic Performances Versus Input Frequency
Figure 9-13. ENOB Versus Input Frequency (Fs = 1 Gsps)
Figure 9-14. SFDR Versus Input Frequency (Fs = 1 Gsps)
5.0
5.5
6.0
6.5
7.0
7.5
8.0
0 200 400 600 800 1000
Fin (MHz)
ENOB (Bit)
-65
-60
-55
-50
-45
-40
-35
0 200 400 600 800 1000
Fin (MH
z
SFDR (dBc)
30
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
Figure 9-15. THD Versus Input Frequency (Fs = 1 Gsps)
Figure 9-16. SNR Versus Input Frequency (Fs = 1 Gsps)
9.7 Typical Reconstructed Signals and Signal Spectrum
Figure 9-17. Fs = 1 Gsps and Fin = 20 MHz (1:2 DMUX, Fs/2 DR Type, FiSDA = -15 ps, ISA = -50 ps)
-65
-60
-55
-50
-45
-40
-35
0 200 400 600 800 1000
Fin (MHz)
THD (dBc)
30
32
34
36
38
40
42
44
46
48
50
0 200 400 600 800 1000
Fin (MHz)
SNR (dBc)
0
50
100
150
200
250
1 513 1025 1537 2049 2561 3073 3585
Samples
Codes
Ch IA
Ch QA
-120
-100
-80
-60
-40
-20
0
20
0 31 62 93 125 156 187 218 249
F (Msps)
dBc
Ch IA
Ch QA
Fout/2
31
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
Figure 9-18. Fs = 1 Gsps and Fin = 500 MHz (1:2 DMUX, Fs/2 DR Type, FiSDA = -15 ps, ISA = -50 ps)
Figure 9-19. Fs = 1 Gsps and Fin = 1 GHz (1:2 DMUX, Fs/2 DR Type, FiSDA = -15 ps, ISA = -50 ps)
Note: The spectra are given with respect to the output clock frequency observed by the acquisition system (Fig-
ures 31 to 33).
Figure 9-20. Fs = 1 Gsps and Fin = 20 MHz (Interleaving Mode Fint = 2 Gsps, Fs/4 DR Type, FiSDA = -15 ps, ISA = -50
ps)
0
50
100
150
200
250
1 513 1025 1537 2049 2561 3073 3585
Samples
Codes
Ch IA
Ch QA
-120
-100
-80
-60
-40
-20
0
20
0 31 62 93 125 156 187 218 249
F (Msps)
dBc
Ch IA
Ch QA
Fout/2
0
50
100
150
200
250
1 513 1025 1537 2049 2561 3073 3585
Samples
Codes
Ch IA
Ch QA
-120
-100
-80
-60
-40
-20
0
20
0 31 62 93 125 156 187 218 249
F (Msps)
dBc
Ch IA
Ch QA
Fout/2
0
50
100
150
200
250
1 2048 4095 6142 8189 10236 12283 14330 16377
Samples
Codes
-120
-100
-80
-60
-40
-20
0
20
0 125 250 375 500 624 749 874 999
Fs (MHz)
dBc
Fs/2
32
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
Figure 9-21. Fs = 1 Gsps and Fin = 250 MHz (Interleaving Mode Fint = 2 Gsps, Fs/4 DR Type,
FiSDA = -15 ps, ISA = -50 ps)
0
50
100
150
200
250
1 2048 4095 6142 8189 10236 12283 14330 16377
Samples
Codes
-120
-100
-80
-60
-40
-20
0
20
0 125 250 375 500 624 749 874 999
Fs (MHz)
dBc
Fs/2
33
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
9.8 Typical Performance Sensitivity Versus Power Supplies and Temperature
Figure 9-22. ENOB Versus VCCA = VCCD (Fs = 1 Gsps, Fin = 500 MHz, 1:2 DMUX,
Fs/4 DR Type, ISA = -50 ps)
Figure 9-23. SFDR Versus VCCA = VCCD (Fs = 1 Gsps, Fin = 500 MHz, 1:2 DMUX,
Fs/4 DR Type, ISA = -50 ps)
6.0
6.2
6.4
6.6
6.8
7.0
7.2
7.4
3.1 3.15 3.2 3.25 3.3 3.35 3.4 3.45 3.5
Vcca = Vccd (V)
ENOB (Bit)
-60
-55
-50
-45
-40
3.1 3.15 3.2 3.25 3.3 3.35 3.4 3.45 3.5
Vcca = Vccd (V)
SFDR (dBc)
34
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
Figure 9-24. THD Versus VCCA = VCCD (Fs = 1 Gsps, Fin = 500 MHz, 1:2 DMUX,
Fs/4 DR Type, ISA = -50 ps)
Figure 9-25. SNR Versus VCCA = VCCD (Fs = 1 Gsps, Fin = 500 MHz, 1:2 DMUX,
Fs/4 DR Type, ISA = -50 ps)
-60
-55
-50
-45
-40
3.1 3.15 3.2 3.25 3.3 3.35 3.4 3.45 3.5
VCCA = VCCD (V)
THD (dBc)
40.0
41.0
42.0
43.0
44.0
45.0
3.1 3.15 3.2 3.25 3.3 3.35 3.4 3.45 3.5
VCCA = VCCD (V)
SNR (dBc)
˚
35
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
Figure 9-26. ENOB Versus Ambient Temperature (Fs = 1 Gsps, 1:2 DMUX,
Fs/4 DR Type, ISA = -50 ps)
Figure 9-27. SFDR Versus Ambient Temperature (Fs = 1 Gsps, 1:2 DMUX,
Fs/4 DR Type, ISA = -50 ps)
5.0
5.5
6.0
6.5
7.0
7.5
8.0
-40 -15 10 35 60 85
Tamb (˚C)
ENOB (Bit)
1 Gsps 20 MHz
1 Gsps 502 MHz
1 Gsps 998 MHz
-65
-60
-55
-50
-45
-40
-35
-40 -15 10 35 60 85
Tamb (˚C)
SF DR (dBc)
1 Gsps 20 MHz
1 Gsps 502 MHz
1 Gsps 998 MHz
36
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
Figure 9-28. THD Versus Ambient Temperature (Fs = 1 Gsps, 1:2 DMUX,
Fs/4 DR Type, ISA = -50 ps)
Figure 9-29. SNR Versus Ambient Temperature (Fs = 1 Gsps, 1:2 DMUX,
Fs/4 DR Type, ISA = -50 ps)
-60
-55
-50
-45
-40
-35
-40 -15 10 35 60 85
Tamb (˚C)
THD (dBc)
1 Gsps 20 MHz
1 Gsps 502 MHz
1 Gsps 998 MHz
41.0
42.0
43.0
44.0
45.0
-40 -15 10 35 60 85
Tamb (˚C)
SNR (dBc)
1 Gsps 20 MHz
1 Gsps 502 MHz
1 Gsps 998 MHz
37
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
10. Test and Control Features
10.1 3-wire Serial Interface Control Setting
Table 10-1. 3-wire Serial Interface Control Settings
Mode Characteristics
Mode = 1 (2.25V) 3-wire serial bus interface activated
Mode = 0 (0V)
3-wire serial bus interface deactivated
Nominal setting:
Dual channel I and Q activated
One clock I
0 dB gain
DMUX mode 1:1
DRDA I & Q = 0 ps
ISA I & Q = 0 ps
FiSDA Q = 0 ps
Binary output
Decimation test mode OFF
Calibration setting OFF
Data Ready = Fs /2
38
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
10.1.1 3-wire Serial Interface and Data Description
The 3-wire bus is activated with the control bit mode set to 1. The length of the word is 19 bits: 16 for the
data and 3 for the address. The maximum clock frequency is 50 MHz.
Table 10-2. 3-wire Serial Interface Address Setting Description
Address Setting
000
Standby
Gray/binary mode
1:1 or 1:2 DMUX mode
Analog input MUX
Clock selection
Auto-calibration
Decimation test mode
Data Ready Delay Adjust
001
Analog gain adjustment
Data7 to Data0: gain channel I
Data15 to Data8: gain channel Q
Code 00000000: -1.5 dB
Code 10000000: 0 dB
Code 11111111: 1.5 dB
Steps: 0.011 dB
010
Offset compensation
Data7 to Data0: offset channel I
Data15 to Data8: offset channel Q
Data7 and Data15: sign bits
Code 11111111b: 31.75 LSB
Code 10000000b: 0 LSB
Code 00000000b: 0 LSB
Code 01111111b: -31.75 LSB
Steps: 0.25 LSB
Maximum correction: ±31.75 LSB
011
Gain compensation
Data6 to Data0: channel I/Q (Q is matched to I)
Code 11111111b: -0.315 dB
Code 10000000b: 0 dB
Code 0000000b: 0 dB
Code 0111111b: 0.315 dB
Steps: 0.005 dB
Data6: sign bit
100
Internal Settling Adjustment (ISA)
Data2 to Data0: channel I
Data5 to Data3: channel Q
Data15 to Data6: 1000010000
39
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
Notes: 1. The Internal Settling Adjustment could change independently of the two analog sampling times (TA channels I and Q) of the
sample/hold (with a fixed digital sampling time) with steps of ±50 ps:
Nominal mode will be given by Data2…Data0 = 100 or Data5…Data3 = 100.
Data5…Data3 = 000 or Data2…Data0 = 000: sampling time is -200 ps compared to nominal.
Data2…Data0 = 111 or Data5…Data3 = 111: sampling time is 150 ps compared to nominal.
We recommend setting the ISA to -50 ps to optimize the ADC’s dynamic performances.
2. The Fine Sampling Delay Adjustment enables you to change the sampling time (steps of ±5 ps) on channel Q more pre-
cisely, particularly in the interleaved mode.
3. A Built-In Test (BIT) function is available to rapidly test the device’s I/O by either applying a defined static pattern to the dual
ADC or by generating a dynamic ramp at the output of the dual ADC. This function is controlled via the 3-wire bus interface
at the address 110. The maximum clock frequency in dynamic BIT mode is 750 Msps.
Please refer to “Built-In Test (BIT)” on page 45 for more information about this function.
4. The decimation mode enables you to lower the output bit rate (including the output clock rate) by a factor of 16, while the
internal clock frequency remains unchanged. The maximum clock frequency in decimation mode is 750 Msps.
5. The “S/H transparent” mode (address 101, Data4) enables bypassing of the ADC’s track/hold. This function optimizes the
ADC’s performances at very low input frequencies (Fin < 50 MHz).
101
Testability
Data3 to Data0 = 0000
Mode S/H transparent OFF: Data4 = 0 ON: Data4 = 1
Data7 = 0
Data8 = 0
110
Built-In Test (BIT)
Data0 = 0 BIT Inactive Data0 = 1BIT Active
Data1 = 0 Static BIT Data1 = 1Dynamic BIT
If Data1 = 1, then Ports BI & BQ = Rising Ramp
Ports AI & AQ = Decreasing Ramp
If Data1 = 0, then Data2 to Data9 = Static Data for BIT
Ports BI & BQ = Data2 to Data9
Ports AI & AQ = NOT (Data2 to Data9)
111
Data Ready Delay Adjust (DRDA)
Data2 to Data0: clock I
Data5 to Data3: clock Q
Steps: 140 ps
000: -560 ps
100: 0 ps
111: 420 ps
Fine Sampling Delay Adjustment (FiSDA) on channel Q
Data10 to Data6: channel Q
Steps: 5 ps
Data4: sign bit
Code 11111: -75 ps
Code 10000: 0 ps
Code 00000: 0 ps
Code 01111: 75 ps
Table 10-2. 3-wire Serial Interface Address Setting Description (Continued)
Address Setting
40
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
6. In the Gray mode, when the input signal is overflow (that is, the differential analog input is greater than 250 mV), the output
data must be corrected using the output DOIR:
If DOIR = 1: Data7 unchanged.
Data6 = 0, Data5 = 0, Data4 = 0, Data3 = 0, Data2 = 0, Data1 = 0, Data0 = 0.
In 1:2 DMUX mode, only one out-of-range bit is provided for both A and B ports.
41
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
Table 10-3. 3-wire Serial Interface Data Setting Description
Setting for Address:
000 D15 D14 D13 D12 D11 D10 D9(1) D8 D7 D6 D5 D4 D3 D2 D1 D0
Full standby mode XXXXXX 0 XXXXXXX11
Standby channel I(2) XXXXXX 0 XXXXXXX01
Standby channel Q(3) XXXXXX 0 XXXXXXX10
No standby mode XXXXXX 0 XXXXXXX00
Binary output mode XXXXXX 0 XXXXXX1XX
Gray output mode XXXXXX 0 XXXXXX0XX
DMUX 1:2 mode XXXXXX 0 XXXXX1XXX
DMUX 1:1 mode XXXXXX 0 XXXXX0XXX
Analog selection mode
Input I → ADC I
Input Q → ADC Q
XXXXXX 0 XXX11XXXX
Analog selection mode
Input I → ADC I
Input I → ADC Q
XXXXXX 0 XXX10XXXX
Analog selection mode
Input Q → ADC I
Input Q → ADC Q
XXXXXX 0 XXX0XXXXX
Clock Selection mode
CLKI → ADC I
CLKQ → ADC Q
XXXXXX 0 X11XXXXXX
Clock selection mode
CLKI → ADC I
CLKI → ADC Q
XXXXXX 0 X10XXXXXX
Clock selection mode
CLKI → ADC I
CLKIN → ADC Q
XXXXXX 0 X0XXXXXXX
Decimation OFF modeXXXXXX 0 0XXXXXXXX
Decimation ON mode XXXXXX 0 1XXXXXXXX
Keep last calibration
calculated value(4)
No calibration phase
XXXX01 0 XXXXXXXXX
No calibration phase(5)
No calibration value XXXX0 0 0 XXXXXXXXX
Start a new calibration
phase XXXX11 0 XXXXXXXXX
42
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
Notes: 1. D9 must be set to “0”
2. Mode standby channel I: use analog input I Vini, Vinib and Clocki.
3. Mode standby channel Q: use analog input Q Vinq, Vinqb and Clockq.
4. Keep last calibration calculated value - no calibration phase: D11 = 0 and D10 = 1. No new calibration is required. The val-
ues taken into account for the gain and offset are either from the last calibration phase or are default values (reset values).
5. No calibration phase - no calibration value: D11 = 0 and D10 = 0. No new calibration phase is required. The gain and offset
compensation functions can be accessed externally by writing in the registers at address 010 for the offset compensation
and at address 011 for the gain compensation.
6. The control wait bit gives the possibility to change the internal setting for the auto-calibration phase:
For high clock rates (> 500 Msps) use a = b = 1.
For clock rates > 250 Msps and < 500 Msps use a = 1 and b = 0.
For clock rates > 125 Msps and < 250 Msps use a = 0 and b = 1.
For low clock rates < 125 Msps use a = 0 and b = 0.
10.1.2 3-wire Serial Interface Timing Description
The 3-wire serial interface is a synchronous write-only serial interface made of three wires:
• sclk: serial clock input
• sldn: serial load enable input
• sdata: serial data input
The 3-wire serial interface gives write-only access to as many as 8 different internal registers of up to 16
bits each. The input format is always fixed with 3 bits of register address followed by 16 bits of data. The
data and address are entered with the Most Significant Bit (MSB) first.
The write procedure is fully synchronous with the rising clock edge of “sclk” and described in the write
chronogram (Figure 10-1 on page 43).
• “sldn” and “sdata” are sampled on each rising clock edge of “sclk” (clock cycle).
• “sldn” must be set to 1 when no write procedure is performed.
• A minimum of one rising clock edge (clock cycle) with “sldn” at 1 is required for a correct start of the
write procedure.
• A write starts on the first clock cycle with “sldn” at 0. “sldn” must stay at 0 during the complete write
procedure.
• During the first 3 clock cycles with “sldn” at 0, 3 bits of the register address from MSB (a[2]) to LSB
(a[0]) are entered.
• During the next 16 clock cycles with “sldn” at 0, 16 bits of data from MSB (d[15]) to LSB (d[0]) are
entered.
Control wait bit
calibration(6) X X a b X X 0 XXXXXXXXX
In 1:2 DMUX
FDataReady
I & Q = Fs/2
X 0 X X X X 0 XXXXXXXXX
In 1:2 DMUX
FDataReady
I & Q = Fs/4
X 1 X X X X 0 XXXXXXXXX
Table 10-3. 3-wire Serial Interface Data Setting Description (Continued)
Setting for Address:
000 D15 D14 D13 D12 D11 D10 D9(1) D8 D7 D6 D5 D4 D3 D2 D1 D0
43
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
• An additional clock cycle with “sldn” at 0 is required for parallel transfer of the serial data d[15:0] into
the addressed register with address a[2:0]. This yields 20 clock cycles with “sldn” at 0 for a normal
write procedure.
• A minimum of one clock cycle with “sldn” returned at 1 is requested to close the write procedure and
make the interface ready for a new write procedure. Any clock cycle where “sldn” is at 1 before the
write procedure is completed interrupts this procedure and no further data transfer to the internal
registers is performed.
• Additional clock cycles with “sldn” at 0 after the parallel data transfer to the register (done at the 20th
consecutive clock cycle with “sldn” at 0) do not affect the write procedure and are ignored.
It is possible to have only one clock cycle with “sldn” at 1 between two following write procedures.
• 16 bits of data must always be entered even if the internal addressed register has less than 16 bits.
Unused bits (usually MSBs) are ignored. Bit signification and bit positions for the internal registers are
detailed in Table 10-2 on page 38.
To reset the registers, the Pin mode can be used as a reset pin for chip initialization, even when the 3-
wire serial interface is used.
Figure 10-1. Write Chronogram
Figure 10-2. Timing Definition
Reset Write procedure
a[2] a[1] a[0] d[15] d[8] d[7] d[6] d[5] d[4] d[3] d[2] d[1] d[0]
12 345 1314151617181920
Reset setting
Mode
sclk
sldn
sdata
Internal register
value New d
Mode
sclk
sldn
sdata
Twlmode
Tdmode
Tssldn
Tssdata
Thsldn
Thsdata
Tdmode
Twsclk
Tsclk
44
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
10.1.3 Calibration Description
The AT84AD001B offers the possibility of reducing offset and gain matching between the two ADC cores.
An internal digital calibration may start right after the 3-wire serial interface has been loaded (using data
D12 of the 3-wire serial interface with address 000).
The beginning of calibration disables the two ADCs and a standard data acquisition is performed. The
output bit CAL goes to a high level during the entire calibration phase. When this bit returns to a low
level, the two ADCs are calibrated with offset and gain and can be used again for a standard data
acquisition.
If only one channel is selected (I or Q) the offset calibration duration is divided by two and no gain cali-
bration between the two channels is necessary.
Figure 10-3. Internal Timing Calibration
The Tcal duration is a multiple of the clock frequency ClockI (master clock). Even if a dual clock scheme
is used during calibration, ClockQ will not be used.
The control wait bits (D13 and D14) give the possibility of changing the calibration’s setting depending on
the clock’s frequency:
• For high clock rates (> 500 Msps) use a = b = 1, Tcal = 10112 clock I periods.
• For clock rates > 250 Msps and < 500 Msps use a = 1, b = 0, Tcal = 6016 clock I periods.
• For clock rates > 125 Msps and < 250 Msps use a = 0, b = 1 ,Tcal = 3968 clock I periods.
• For low clock rates (< 125 Msps) use a = 0, b = 0 , Tcal = 2944 clock I periods.
Table 10-4. Timing Description
Name Parameter
Value
UnitMin Typ Max
Tsclk Sclk period 20 ns
Twsclk High or low time of sclk 5 ns
Tssldn Setup time of sldn before rising edge of sclk 4 ns
Thsldn Hold time of sldn after rising edge of sclk 2 ns
Tssdata Setup time of sdata before rising edge of sclk 4 ns
Thsdata Hold time of sdata after rising edge of sclk 2 ns
Twlmode Minimum low pulse width of mode 5 ns
Tdmode Minimum delay between an edge of mode and the
rising edge of sclk 10 ns
3-wire Serial Interface
LDN
CAL
Tcal
45
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
The calibration phase is necessary when using the AT84AD001B in Interleaved mode, where one analog
input is sampled at both ADC cores on the common input clock’s rising and falling edges. This operation
is equivalent to converting the analog signal at twice the clock frequency
During the ADC’s auto-calibration phase, the dual ADC is set with the following:
• Decimation mode ON
• 1:1 DMUX mode
• Binary mode
Any external action applied to any signal of the ADC’s registers is inhibited during the calibration phase.
10.1.4 Gain and Offset Compensation Functions
It is also possible for the user to have external access to the ADC’s gain and offset compensation
functions:
• Offset compensation between I and Q channels (at address 010)
• Gain compensation between I and Q channels (at address 011)
To obtain manual access to these two functions, which are used to set the offset to middle code 127.5
and to match the gain of channel Q with that of channel I (if only one channel is used, the gain compen-
sation does not apply), it is necessary to set the ADC to “manual” mode by writing 0 at bits D11 and D10
of address 000.
10.1.5 Built-In Test (BIT)
A Built-In Test (BIT) function is available to allow rapid testing of the device’s I/O by either applying a
defined static pattern to the ADC or by generating a dynamic ramp at the ADC’s output. The dynamic
ramp can be used with a clock frequency of up to
750 Msps. This function is controlled via the 3-wire bus interface at address 101.
• The BIT is active when Data0 = 1 at address 110.
• The BIT is inactive when Data0 = 0 at address 110.
• The Data1 bit allows choosing between static mode (Data1 = 0) and dynamic mode (Data1 = 1).
When the static BIT is selected (Data1 = 0), it is possible to write any 8-bit pattern by defining the Data9
to Data2 bits. Port B then outputs an 8-bit pattern equal to Data9 ... Data2, and Port A outputs an 8-bit
pattern equal to NOT (Data9 ... Data2).
Table 10-5. Matching Between Channels
Parameter
Value
UnitMin Typ Max
Gain error (single channel I or Q) without calibration 0 %
Gain error (single channel I or Q) with calibration -2 0 2 %
Offset error (single channel I or Q) without calibration 0 LSB
Offset error (single channel I or Q) with calibration -2 0 2 LSB
Mean offset code without calibration (single channel I or Q) 127.5
Mean offset code with calibration (single channel I or Q) 126 127.5 129
46
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
Example:
Address = 110
Data =
One should then obtain 01010101 on Port B and 10101010 on Port A.
When the dynamic mode is chosen (Data1 = 1) port B outputs a rising ramp while Port A outputs a
decreasing one.
Note: In dynamic mode, use the DRDA function to align the edges of CLKO with the middle of the data.
10.1.6 Decimation Mode
The decimation mode is provided to enable rapid testing of the ADC at a maximum clock frequency of
750 Msps. In decimation mode, one data out of 16 is output, thus leading to a maximum output rate of
46.875 Msps.
Note: Frequency (CLKO) = frequency (Data) = Frequency (CLKI)/16.
10.2 Die Junction Temperature Monitoring Function
A die junction temperature measurement setting is included on the board for junction temperature
monitoring.
The measurement method forces a 1 mA current into a diode-mounted transistor.
Caution should be given to respecting the polarity of the current.
In any case, one should make sure the maximum voltage compliance of the current source is limited to a
maximum of 1V or use a resistor serial-mounted with the current source to avoid damaging the transistor
device (this may occur if the current source is reverse-connected).
The measurement setup is illustrated in Figure 47.
Figure 10-4. Die Junction Temperature Monitoring Setup
D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
XXXXXX0101010101
1 mA
GNDD
(Pin 36)
VDiode (Pin 35)
Protection
Diodes
47
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
The VBE diode’s forward voltage in relation to the junction temperature (in steady-state conditions) is
shown in Figure 48.
Figure 10-5. Diode Characteristics Versus TJ
10.3 VtestI, VtestQ
VtestI and VtestQ pins are for internal test use only. These two signals must be left open.
620
640
660
680
700
720
740
760
780
800
820
840
860
-20-100 102030405060708090100110120
Junction Temperature (˚C)
Diode Voltage (mV)
48
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
11. Equivalent Input/Output Schematics
Figure 11-1. Simplified Input Clock Model
Figure 11-2. Simplified Data Ready Reset Buffer Model
VCCD/2
100Ω
VCCD
GNDD
CLK
CLKB
100Ω
50Ω
50Ω
VCCD/2
100Ω
VCCD
GNDD
DDRB
DDRBN
100Ω
50Ω
50Ω
49
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
Figure 11-3. Analog Input Model
Figure 11-4. Data Output Buffer Model
GND
GND
Vcca
GND
Vcca
Sel Input I
GND
VinI
VinQ
Sel Input Q
VinQ Reverse
Termination
50Ω
ESD
ESD
VinQ
Double
Pad
VinI Double Pad
DC Coupling
(Common Mode = Ground = 0V)
GND – 0.4V
MAX
50ΩVinl Reverse
Termination
VCCO
GNDO
DOAIO, DOAI7
DOBIO, DOBI7
DOAION, DOAI7
N
DOBION, DOBI7
N
50
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
12. Definitions of Terms
Table 12-1. Definitions of Terms
Abbreviation Definition Description
BER Bit Error Rate The probability of an error occurring on the output at a maximum sampling rate.
DNL Differential
Non-Linearity
The differential non-linearity for an output code i is the difference between the measured step
size of code i and the ideal LSB step size. DNL (i) is expressed in LSBs. DNL is the
maximum value of all DNL (i). A DNL error specification of less than 1 LSB guarantees that
there are no missing output codes and that the transfer function is monotonic
ENOB Effective Number of
Bits
Where A is the actual input amplitude and Fs is
the full scale range of the ADC under test
FPBW Full Power Input
Bandwidth
The analog input frequency at which the fundamental component in the digitally
reconstructed output waveform has fallen by 3 dB with respect to its low frequency value
(determined by FFT analysis) for input at full-scale -1 dB (-1 dBFS)
IMD Inter-Modulation
Distortion
The two tones intermodulation distortion (IMD) rejection is the ratio of either of the two input
tones to the worst third order intermodulation products
INL Integral
Non-Linearity
The integral non-linearity for an output code i is the difference between the measured input
voltage at which the transition occurs and the ideal value of this transition. INL (i) is
expressed in LSBs and is the maximum value of all |INL (i)|
JITTER Aperture
uncertainty
The sample-to-sample variation in aperture delay. The voltage error due to jitters depends on
the slew rate of the signal at the sampling point
NPR Noise Power Ratio
The NPR is measured to characterize the ADC’s performance in response to broad
bandwidth signals. When applying a notch-filtered broadband white noise signal as the input
to the ADC under test, the Noise Power Ratio is defined as the ratio of the average out-of-
notch to the average in-notch power spectral density magnitudes for the FFT spectrum of the
ADC output sample test
ORT Overvoltage
Recovery Time
The time to recover a 0.2% accuracy at the output, after a 150% full-scale step applied on
the input is reduced to midscale
PSRR Power Supply
Rejection Ratio The ratio of input offset variation to a change in power supply voltage
SFDR Spurious Free
Dynamic Range
The ratio expressed in dB of the RMS signal amplitude, set at 1 dB below full-scale, to the
RMS value of the highest spectral component (peak spurious spectral component). The peak
spurious component may or may not be a harmonic. It may be reported in dB (related to the
converter -1 dB full-scale) or in dBc (related to the input signal level)
SINAD Signal to Noise and
Distortion Ratio
The ratio expressed in dB of the RMS signal amplitude, set to 1 dB below full-scale (-1 dBFS)
to the RMS sum of all other spectral components including the harmonics, except DC
SNR Signal to Noise
Ratio
The ratio expressed in dB of the RMS signal amplitude, set to 1 dB below full-scale, to the
RMS sum of all other spectral components excluding the first 9 harmonics
SSBW Small Signal Input
Bandwidth
The analog input frequency at which the fundamental component in the digitally
reconstructed output waveform has fallen by 3 dB with respect to its low frequency value
(determined by FFT analysis) for input at full-scale -10 dB (-10 dBFS)
TA Aperture delay The delay between the rising edge of the differential clock inputs (CLK, CLKB) [zero crossing
point] and the time at which VIN and VINB are sampled
TC Encoding Clock
period
TC1 = minimum clock pulse width (high)
TC = TC1 + TC2
TC2 = minimum clock pulse width (low)
ENOB SINAD 1,76–20 A
Fs/2
-----------
log+
6,02
-----------------------------------------------------------------------------=
51
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
TD1
Time Delay from
Data Transition to
Data Ready
The general expression is TD1 = TC1 + TDR - TDO with TC = TC1 + TC2 = 1 encoding clock
period
TD2
Time Delay from
Data Ready to
Data
The general expression is TD2 = TC2 + TDR - TDO with TC = TC1 + TC2 = 1 encoding clock
period
TDO Digital Data Output
Delay
The delay from the rising edge of the differential clock inputs (CLK, CLKB) [zero crossing
point] to the next point of change in the differential output data (zero crossing) with a
specified load
TDR Data Ready Output
Delay
The delay from the falling edge of the differential clock inputs (CLK, CLKB) [zero crossing
point] to the next point of change in the differential output data (zero crossing) with a
specified load
TF Fall Time The time delay for the output data signals to fall from 20% to 80% of delta between the low
and high levels
THD Total Harmonic
Distortion
The ratio expressed in dB of the RMS sum of the first 9 harmonic components to the RMS
input signal amplitude, set at 1 dB below full-scale. It may be reported in dB (related to the
converter -1 dB full-scale) or in dBc (related to the input signal level )
TPD Pipeline Delay The number of clock cycles between the sampling edge of an input data and the associated
output data made available (not taking into account the TDO)
TR Rise Time The time delay for the output data signals to rise from 20% to 80% of delta between the low
and high levels
TRDR Data Ready Reset
Delay
The delay between the falling edge of the Data Ready output asynchronous reset signal
(DDRB) and the reset to digital zero transition of the Data Ready output signal (DR)
TS Settling Time The time delay to rise from 10% to 90% of the converter output when a full-scale step
function is applied to the differential analog input
VSWR Voltage Standing
Wave Ratio
The VSWR corresponds to the ADC input insertion loss due to input power reflection. For
example, a VSWR of 1.2 corresponds to a 20 dB return loss (99% power transmitted and 1%
reflected)
Table 12-1. Definitions of Terms (Continued)
Abbreviation Definition Description
52
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
13. Using the AT84AD001B Dual 8-bit 1 Gsps ADC
13.1 Decoupling, Bypassing and Grounding of Power Supplies
The following figures show the recommended bypassing, decoupling and grounding schemes for the
dual 8-bit 1 Gsps ADC power supplies.
Figure 13-1. VCCD and VCCA Bypassing and Grounding Scheme
Figure 13-2. VCCO Bypassing and Grounding Scheme
Note: L and C values must be chosen in accordance with the operation frequency of the application.
Figure 13-3. Power Supplies Decoupling Scheme
Note: The bypassing capacitors (1 µF and 100 pF) should be placed as close as possible to the board connec-
tors, whereas the decoupling capacitors (100 pF and 10 nF) should be placed as close as possible to the
device.
1µF
L
PC Board 3.3V
PC Board GND
VCCD
L
CC
VCCA
100 pF
1µF
L
PC Board 2.25V
PC Board GND
VCCO
C
100 pF
VCCA
GNDA VCCO
GNDO
GNDA
GNDD
GNDO
VCCD
VCCA
VCCO
100 pF
100 pF 10 nF
10 nF
100 pF 10 nF
53
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
13.2 Analog Input Implementation
The analog inputs of the dual ADC have been designed with a double pad implementation as illustrated
in Figure 56. The reverse pad for each input should be tied to ground via a 50Ω resistor.
The analog inputs must be used in differential mode only.
Figure 13-4. Termination Method for the ADC Analog Inputs in DC Coupling Mode
Channel I
Channel Q
50Ω Source
VinI
VinIB
VinQ
VinQB
VinI
VinIB
VinQ
VinQB
Dual ADC
50Ω
50Ω
50Ω
50Ω
GND
GND
50Ω Source
GND
GND
54
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
Figure 13-5. Termination Method for the ADC Analog Inputs in AC Coupling Mode
13.3 Clock Implementation
The ADC features two different clocks (I or Q) that must be implemented as shown in Figure 58. Each
path must be AC coupled with a 100 nF capacitor.
Figure 13-6. Differential Termination Method for Clock I or Clock Q
Note: When only clock I is used, it is not necessary to add the capacitors on the CLKQ and CLKQN signal paths;
they may be left floating.
Channel I
Channel Q
50Ω Source
VinI
VinIB
VinQ
VinQB
VinI
VinIB
VinQ
VinQB
Dual ADC
50Ω
50Ω
50Ω
50Ω
GND
GND
50Ω Source
GND
GND
ADC Package
VCCD/2
50Ω
50Ω
100 nF
100 nF
Differential Buffer
CLK
CLKB
55
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
DDRB may be implemented as described in the following figure. A pull-up resistor is implemented to
maintain the DDRB signal inactive in normal mode. The Data Ready Reset command (it may be a pulse)
is active on the high level.
Figure 13-7. Single-ended Termination Method for Clock I or Clock Q
13.4 Reset Implementation
DDRB may be implemented as described in the following figure. A pull-up resistor is implemented to
maintain the DDRB signal inactive in normal mode. The Data Ready Reset command (it might be a
pulse) is active on the high level.
Figure 13-8. Reset Implementation
CLK
CLKB
50Ω
VCC
VCCD/2
AC coupling Capacitor
50Ω
Source
4.2 K
4.2 K
AC coupling Capacitor
50Ω
50Ω
DDRB
DDRBN
DDRB
VCCD
R = 1.5 K
R = 1.4 K
DDRBN
C = 100 nF
DDRB inactive
56
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
13.5 Output Termination in 1:1 Ratio
When using the integrated DMUX in 1:1 ratio, the valid port is port A. Port B remains unused.
Port A functions in LVDS mode and the corresponding outputs (DOAI or DOAQ) have to be 100Ω differ-
entially terminated as shown in Figure 13-9 on page 56.
The pins corresponding to Port B (DOBI or DOBQ pins) must be left floating (in high impedance state).
Figure 60 shows the example of a 1:1 ratio of the integrated DMUX for channel I (the same applies to
channel Q).
Figure 13-9. Example of Termination for Channel I Used in DMUX 1:1 Ratio (Port B Unused)
Note: If the outputs are to be used in single-ended mode, it is recommended that the true and false signals be ter-
minated with a 50Ω resistor.
Port B
DOBI0 / DOBI0N
DOBI1 / DOBI1N
DOBI2 / DOBI2N
DOBI3 / DOBI3N
DOBI4 / DOBI4N
DOBI5 / DOBI5N
DOBI6 / DOBI6N
DOBI7 / DOBI7N
Floating (High Z)
Port A
DOAI0 / DOAI0N
DOAI1 / DOAI1N
DOAI2 / DOAI2N
DOAI3 / DOAI3N
DOAI4 / DOAI4N
DOAI5 / DOAI5N
DOAI6 / DOAI6N
DOAI7 / DOAI7N
VCCO
DOAI0
DOAI0N
Z0 = 50Ω
Z0 = 50Ω100Ω
LVDS In
LVDS In
Dual ADC Package
57
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
13.6 Using the Dual ADC With and ASIC/FPGA Load
Figure 13-10 illustrates the configuration of the dual ADC (1:2 DMUX mode, independent I and Q clocks)
driving an LVDS system (ASIC/FPGA) with potential additional DMUXes used to halve the speed of the
dual ADC outputs.
Figure 13-10. Dual ADC and ASIC/FPGA Load Block Diagram
Note: The demultiplexers may be internal to the ASIC/FPGA system.
Port A
Channel I
Port A
Channel Q
Port B
Channel I
Port B
Channel Q
DEMUX
8:16
DMUX
8:16
DMUX
8:16
DMUX
8:16
CLKI/CLKIN @ FsI
CLKQ/CLKQN @ FsQ
Data rate = FsQ/2
Data rate = FsI/2
Data rate = FsQ/4
ASIC / FPGA
Dual 8-bit 1 Gsps ADC
58
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
14. Thermal Characteristics
14.1 Simplified Thermal Model for LQFP 144
20 × 20 × 1.4 mm
The following model has been extracted from the ANSYS FEM simulations.
Assumptions: no air, no convection and no board.
Figure 14-1. Simplified Thermal Model for LQFP Package
Note: The above are typical values with an assumption of uniform power dissipation over 2.5 × 2.5 mm2 of the top
surface of the die.
355 µm silicon die
25 mm
λ
= 0.95W/cm/˚C
40 µm Epoxy/Ag glue
λ
= 0.02 W/cm/ ˚C
Copper paddle
λ
= 2.5W/cm/˚C
Aluminium paddle
λ
= 0.75W/ cm/ ˚C
Copper alloy leadframe
Package top
5.5˚C/watt
0.1˚C/watt
11.4˚C/watt
Package
bottom
4.3˚C/watt
1.5˚C/watt
λ
= 0.007W/cm/˚C
Silicon Junction
0.6˚C/watt
8.3˚C/watt
1.4˚C/watt
0.1˚C/watt
6.1˚C/watt 1.5˚C/watt
Leads tip
Assumptions:
Die 5.0 x 5.0 = 25 mm
40 µm thick Epoxy/Ag glue
2
Top of user board
Package bottom
connected to:
(user dependent)
Resin bottom
λ = 0.007W/cm/
˚C
2
Aluminium paddle Resin
Resin
λ
= 0.007W/cm/˚C
λ
= 25W/cm/˚C
100 µm air gap λ = 0.00027W/cm/
˚C
100 µm thermal grease gap diamater 12 mm
λ = 0.01W/cm/
˚C
59
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
14.1.0.1 Thermal Resistance from Junction to Bottom of Leads
Assumptions: no air, no convection and no board.
The thermal resistance from the junction to the bottom of the leads is 15.2°C/W typical.
14.1.0.2 Thermal Resistance from Junction to Top of Case
Assumptions: no air, no convection and no board.
The thermal resistance from the junction to the top of the case is 8.3°C/W typical.
14.1.0.3 Thermal Resistance from Junction to Bottom of Case
Assumptions: no air, no convection and no board.
The thermal resistance from the junction to the bottom of the case is 6.4°C/W typical.
14.1.0.4 Thermal Resistance from Junction to Bottom of Air Gap
The thermal resistance from the junction to the bottom of the air gap (bottom of package) is 17.9°C/W
typical.
14.1.0.5 Thermal Resistance from Junction to Ambient
The thermal resistance from the junction to ambient is 25.2°C/W typical.
Note: In order to keep the ambient temperature of the die within the specified limits of the device grade (that is
Tamb max = 70°C in commercial grade and 85°C in industrial grade) and the die junction temperature below
the maximum allowed junction temperature of 105°C, it is necessary to operate the dual ADC in air flow
conditions (1m/s recommended).
In still air conditions, the junction temperature is indeed greater than the maximum allowed TJ.
- TJ = 25.2 °C/W × 1.4W + Tamb = 35.28 + 70 = 105.28 °C for commercial grade devices
- TJ = 25.2 °C/W × 1.4W + Tamb = 35.28 + 85 = 125.28 °C for industrial grade devices
14.1.0.6 Thermal Resistance from Junction to Board
The thermal resistance from the junction to the board is 13°C/W typical.
14.2 LQFP-ep 144L Green Package Thermal Characteristics
14.2.1 Thermal Resistance from Junction to Ambient
Simulations (JEDEC JESD51 standard) were held with the following assumptions:
• Board with 76.2 mm x 114.3 mm dimensions
• Still air
• Exposed pad (5.8 x 5.8 mm) soldered to the board
The thermal resistance from the junction to ambient is 25.0 °C/W.
Note: when the exposed pad is not soldered to the board, the Rthj-a becomes 58.8°C/W.
14.2.2 Exposed pad Board layout recommendation
It is recommended to solder the exposed pad of the LQFP-ep 144L package to the board via a
5.8 x 5.8 mm ground pad.
60
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
15. Ordering Information
Part Number Package Temperature Range Screening Comments
AT84AD001BCTD LQFP 144 C grade
0°C < Tamb < 70°CStandard
AT84AD001BITD LQFP 144 I grade
-40 °C < Tamb < 85°CStandard
AT84AD001BCTDW LQFP-ep 144L green
(RoHS compliant)
C grade
0°C < Tamb < 70°CStandard Please contact your local e2v sales
office
AT84AD001BITDW
LQFP-ep 144L green
(RoHS compliant) I grade
-40°C < Tamb < 85°CStandard Please contact your local e2v sales
office
AT84AD001TD-EB LQFP 144 Ambient Prototype Evaluation Kit
61
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
16. Packaging Information
Figure 16-1. LQFP 144 Package
Note: Thermally enhanced package: LQFP 144, 20 × 20 × 1.4 mm.
D
A1
A2
A
CC
0.25
0.17 max Lead coplanarity
Seating plane
Stand off
A1
b
Lccc c
ddd e cA-B e D e
6o+
-4o
0
0.20 RAD max.
0.20 RAD nom.
A
e
12 oTYP.
12 oTYP.
E1
N
1
E
B
D
D1
A
Notes: 1. All dimensions are in millimeters
2. Dimensions shown are nominal with tolerances as indicated
3. L/F: eftec 64T copper or equivalent
4. Foot length: "L" is measured at gauge plane
at 0.25 mm above the seating plane
Dims. Tols. Leads 144L
A max. 1.60
A1 0.05 min./0.15 max.
A2 +/- 0.05 1.40
D +/-0.20 22.00
D1 +/-0.10 20.00
E +/-0.20 22.00
E1 +/-0.10 20.00
L +0.15/-0.10 0.60
e basic 0.50
b +/-0.05 0.22
ddd 0.08
ccc max. 0.08
o 0 - 5
o
o
Body +2.00 mm footprint
62
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
Figure 16-2. LQFP-ep 144L Green Package
H REF. (4X)
14.000 REF.
20.000±0.100
19.900±0.100
1
144
D
0.200 Min.
N
N
BACK PIN 1
7.000 REF.
14.000 REF.
14.000 REF.
(D1)
(E1)
(4X)
(4X)
bbb H A-B D
aaa C A-B D
D
B A
C0.800X45˚
H
14.000 REF.
ALL AROUND
12˚
ALL AROUND
R0.100~0.200
GAGE PLANE
0˚ Min.
R0.100~0.200
ccc C
A2
R0.300 TYP
e
ddd C A-B D
C
SEATING
PLANE
b
A
0.250 BASE
L1
a
L
A1
.
T1
T
b
b1
(4X)
X
144
1
D1
ALL AROUND
20.000±0.100
19.900±0.100
E
E1
Y
PIN 1
12˚
EXPOSED
PAD AREA
REF.
5.800
REF.
5.800
DETAIL Y
SECTION N-N
DETAIL X
63
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
Figure 16-3. Dimensions
FOR HIGH DENSITY STRIP LAYOUT
STANDOFF
PKG THICKNESS
OVERALL HEIGHT
REMARKS
A1
A23
A12
SYMS/N DIMENSIONS
0.100±0.050
1.400±0.050
MAX. 1.600
DIMENSION LIST ( FOOTPRINT: 2.00)
PKG WIDTH
LEAD TIP TO TIP
PKG LENGTH
LEAD THICKNESS
LEAD LENGTH
FOOT LENGTH
LEAD WIDTH
FOOT ANGLE
CUM. LEAD PITCH
LEAD PITCH
PROFILE OF LEAD TIPS
PROFILE OF MOLD SURFACE
LEAD BASE METAL WIDTH
LEAD BASE METAL THICKNESS
D15
E6
E17
L8
L19
T10
0˚~7˚a12
b114
b13
0.200
0.200
16
aaa
bbb
18
17
H (REF.)
e15
T111 0.127±0.030
0.500 BASE
(17.500)
0.220±0.050
0.200±0.030
0.150
+0.050
-0.060
1.000 REF.
0.600±0.150
20.000±0.100
22.000±0.200
20.000±0.100
LEAD TIP TO TIPD4 22.000±0.200
FOOT POSITION
FOOT COPLANARITY
DISTANCE ±0.100
SPECIFICATION
MAX. 0.127
MAX. 0.127
MAX. R0.200
Ra0.8~2.0um
±2.5˚ANGLE
0.080
0.080
ccc
ddd
20
19
NOTES :
1
S/N
GENERAL TOLERANCE.
2
3
4
6
5
DRAWING DOES NOT INCLUDE PLASTIC OR METAL PROTRUSION
TOP/BTM PACKAGE MISALIGNMENT ( X, Y ):
PACKAGE/LEADFRAME MISALIGNMENT ( X, Y ):
UNLESS OTHERWISE SPECIFIED.
ALL MOLDED BODY SHARP CORNER RADII
EXCEPT EJECTION AND PIN 1 MARKING.
MATTE FINISH ON PACKAGE BODY SURFACE
DESCRIPTION
MS-0267
OR CUTTING BURR.
COMPLIANT TO JEDEC STANDARD:
64
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
i
0817F–BDC–01/07
e2v semiconductors SAS 2006
AT84AD001B
Table of Contents
1 Features .................................................................................................... 1
2 Performance ............................................................................................. 1
3 Application ............................................................................................... 2
4 Description ............................................................................................... 2
5 Functional Description ............................................................................ 2
6 Typical Applications ................................................................................ 4
7 Electrical Operating Characteristics ...................................................... 6
7.1 Timing Diagrams .................................................................................................12
7.2 Functions Description .........................................................................................19
7.3 Digital Output Coding (Nominal Settings) ...........................................................20
8 Pin Description ...................................................................................... 20
9 Typical Characterization Results ......................................................... 23
9.1 Typical Full Power Input Bandwidth ....................................................................23
9.2 Typical Crosstalk ................................................................................................24
9.3 Typical DC, INL and DNL Patterns .....................................................................24
9.4 Typical Step Response .......................................................................................25
9.5 Typical Dynamic Performances Versus Sampling Frequency ............................ 27
9.6 Typical Dynamic Performances Versus Input Frequency ...................................29
9.7 Typical Reconstructed Signals and Signal Spectrum .........................................30
9.8 Typical Performance Sensitivity Versus Power Supplies and Temperature .......33
10 Test and Control Features .................................................................... 37
10.1 3-wire Serial Interface Control Setting ................................................................37
10.2 Die Junction Temperature Monitoring Function ..................................................46
10.3 VtestI, VtestQ ...................................................................................................... 47
11 Equivalent Input/Output Schematics ................................................... 47
12 Definitions of Terms .............................................................................. 49
13 Using the AT84AD001B Dual 8-bit 1 Gsps ADC .................................. 52
13.1 Decoupling, Bypassing and Grounding of Power Supplies ................................52
13.2 Analog Input Implementation ..............................................................................53
ii
0817F–BDC–01/07
AT84AD001B
e2v semiconductors SAS 2006
13.3 Clock Implementation .........................................................................................54
13.4 Reset Implementation .........................................................................................55
13.5 Output Termination in 1:1 Ratio .......................................................................... 56
13.6 Using the Dual ADC With and ASIC/FPGA Load ...............................................57
14 Thermal Characteristics ........................................................................ 58
14.1 Simplified Thermal Model for LQFP 144
20 × 20 × 1.4 mm 58
14.2 LQFP-ep 144L Green package Thermal characteristics ....................................59
15 Ordering Information ............................................................................. 60
16 Packaging Information .......................................................................... 61
Table of Contents ...................................................................................... i
Whilst e2v has taken care to ensure the accuracy of the information contained herein it accepts no responsibility for the consequences of any
use thereof and also reserves the right to change the specific ation of goods without notice. e2v accepts no liability beyond that set out in its stan-
dard conditions of sale in respect of infringement of third party patents arising from the use of tubes or other devices in accorda nce w ith inform a-
tion contained herein.
How to reach us
Home page: www.e2v.com
Sales Office:
United Kingdom
e2v
106 Waterhouse Lane
Chelmsford
Essex CM1 2QU
Tel +44 (0)1245 4 93 493
Fax +44 (0)1245 492 492
USA
e2v
4 Westchester Plaza
Elmsford
NY 10523-1482
Tel +1 914 592 6050
Fax +1 914 592 5148
France
e2v
16 Burospace
F-91 572 Bievres Cedex
Tel +33 (0) 1 601 9 5500
Fax +33 (0) 1 6019 5529
Product Contact:
e2v
Avenue de Rochepleine
BP 123 - 38521 Saint-Egrève Cedex
France
Tel. +33 (0)4 7 6 58 30 00
Hotline:
hotline-bdc@e2v.com
0817F–BDC–01/07
e2v semiconductors SAS 2006
