SUM110P06-07L Vishay Siliconix P-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY rDS(on) () ID (A)d 0.0069 at VGS = - 10 V - 110 0.0088 at VGS = - 4.5 V - 110 VDS (V) - 60 * TrenchFET(R) Power MOSFET * Package with Low Thermal Resistance Available RoHS* COMPLIANT S TO-263 G G D S Top View D Ordering Information: SUM110P06-07L SUM110P06-07L-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS 20 TC = 25 C Continuous Drain Currentd (TJ = 175 C) TC = 125 C Pulsed Drain Current Avalanche Current a L = 0.1 mH Single Pulse Avalanche Energy Power Dissipation TC = 25 C TA = 25 Cb Operating Junction and Storage Temperature Range ID V - 110 - 95 IDM - 240 IAS - 75 EAS 281 PD Unit 375c 3.75 A mJ W TJ, Tstg - 55 to 175 C Symbol Typical Unit RthJA 40 RthJC 0.4 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient b PCB Mount Junction-to-Case C/W Notes: a. Duty cycle 1 %. b. When Mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Limited by package. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72439 S-80274-Rev. C, 11-Feb-08 www.vishay.com 1 SUM110P06-07L Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. V(BR)DSS VGS = 0 V, ID = - 250 A - 60 VGS(th) VDS = VGS, ID = - 250 A -1 IGSS VDS = 0 V, VGS = 20 V 100 VDS = - 60 V, VGS = 0 V -1 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS VDS = - 60 V, VGS = 0 V, TJ = 125 C - 50 VDS = - 60 V, VGS = 0 V, TJ = 175 C - 250 ID(on) VDS = - 5 V, VGS = - 10 V - 120 VGS = - 10 V, ID = - 30 A Drain-Source On-State Resistancea rDS(on) VGS = - 10 V, ID = - 30 A, TJ = 125 C 0.0115 0.0138 Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Gate-Source Charge c Gate-Drain Charge Gate Resistance Timec Rise Timec Turn-Off Delay Timec Qgs 0.0088 20 S pF 1200 230 VDS = - 30 V, VGS = - 10 V, ID = - 110 A 345 nC 50 60 Rg f = 1.0 MHz 3 20 30 VDD = - 30 V, RL = 0.27 ID - 110 A, VGEN = - 10 V, Rg = 2.5 160 240 200 300 240 360 td(on) td(off) 0.007 tf Fall Timec Source-Drain Diode Ratings and Characteristics TC = 25 Cb IS - 110 Pulsed Current ISM - 240 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge 900 Qgd tr A 11400 VGS = 0 V, VDS = - 25 V, f = 1 MHz Qg c Turn-On Delay VDS = - 15 V, ID = - 50 A nA 0.0069 VGS = - 10 V, ID = - 30 A, TJ = 175 C gfs V A 0.0055 VGS = - 4.5 V, ID = - 20 A Forward Transconductancea -3 IF = - 85 A, VGS = 0 V trr IRM(REC) Qrr IF = - 85 A, di/dt = 100 A/s ns A - 1.0 -1.5 V 65 100 ns - 4.2 - 6.3 A 0.14 0.32 C Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72439 S-80274-Rev. C, 11-Feb-08 SUM110P06-07L Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 200 200 VGS = 10 thru 5 V 160 4V I D - Drain Current (A) I D - Drain Current (A) 160 120 80 120 80 TC = 125 C 40 40 25 C 3V - 55 C 0 0 0 2 4 6 8 0 10 1 3 4 5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 250 0.016 TC = - 55 C 0.014 200 r DS(on) - On-Resistance () g fs - Transconductance (S) 2 25 C 150 125 C 100 50 0.012 0.010 0.008 VGS = 4.5 V 0.006 VGS = 10 V 0.004 0.002 0.000 0 0 15 30 45 60 75 0 90 20 40 ID - Drain Current (A) 80 100 120 I D - Drain Current (A) Transconductance On-Resistance vs. Drain Current 14000 20 12000 Ciss V GS - Gate-to-Source Voltage (V) C - Capacitance (pF) 60 10000 8000 6000 4000 Coss 2000 Crss 0 VDS = 30 V ID = 110 A 16 12 8 4 0 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 72439 S-80274-Rev. C, 11-Feb-08 50 60 0 50 100 150 200 250 300 350 400 450 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUM110P06-07L Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 2.0 VGS = 10 V ID = 30 A I S - Source Current (A) (Normalized) rDS(on) - On-Resistance 1.7 1.4 1.1 TJ = 150 C TJ = 25 C 10 0.8 0.5 - 50 - 25 0 25 50 75 100 125 150 1 0.0 175 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (C) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 75 1000 ID = 250 A 72 IAV (A) at TA = 25 C 10 1 V(BR)DSS (V) I Dav (A) 100 IAV (A) at TA = 150 C 0.0001 0.001 0.01 0.1 tin (s) Avalanche Current vs. Time www.vishay.com 4 66 63 0.1 0.00001 69 1 60 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) Drain Source Breakdown vs. Junction Temperature Document Number: 72439 S-80274-Rev. C, 11-Feb-08 SUM110P06-07L Vishay Siliconix THERMAL RATINGS 1000 200 Limited by rDS(on)* 10 s I D - Drain Current (A) I D - Drain Current (A) 150 Package Limited 100 50 0 0 25 50 75 100 125 150 100 100 s 10 1 ms 10 ms 100 ms, DC 1 TC = 25 C Single Pulse 0.1 0.1 175 TC - Case Temperature (C) 1 * VGS Maximum Avalanche and Drain Current vs. Case Temperature 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5 C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72439. Document Number: 72439 S-80274-Rev. C, 11-Feb-08 www.vishay.com 5 Package Information Vishay Siliconix TO-263 (D2PAK): 3-LEAD INCHES -B- L2 -A- c2 D2 D3 A E E1 K D D1 E3 6 L c* L3 c1 A A b2 b e c Detail "A" E2 c c1 L1 b b1 M 0 L4 -5 0.010 M A M 2 PL MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 b2 0.045 0.055 1.143 1.397 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.685 0.023 0.027 0.584 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e DETAIL A (ROTATED 90) SECTION A-A MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.002 0.254 BSC - 0.050 ECN: T10-0738-Rev. J, 03-Jan-11 DWG: 5843 Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Document Number: 71198 Revison: 03-Jan-11 www.vishay.com 1 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000