SUM110P06-07L-E3 - Vishay [Siliconix]

Vishay Siliconix

SUM110P06-07L

Document Number: 72439

S-80274-Rev. C, 11-Feb-08

www.vishay.com

P-Channel 60-V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET® Power MOSFET

• Package with Low Thermal Resistance

PRODUCT SUMMARY

VDS (V) rDS(on) (Ω)ID (A)d

- 60 0.0069 at VGS = - 10 V - 110

0.0088 at VGS = - 4.5 V - 110

TO-263

SDG

Top View

Ordering Information: SUM110P06-07L

SUM110P06-07L-E3 (Lead (Pb)-free)

P-Channel MOSFET

Notes:

a. Duty cycle ≤ 1 %.

b. When Mounted on 1" square PCB (FR-4 material).

c. See SOA curve for voltage derating.

d. Limited by package.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage VDS - 60 V

Gate-Source Voltage VGS ± 20

Continuous Drain Currentd

(TJ = 175 °C)

TC = 25 °C ID

- 110

TC = 125 °C - 95

Pulsed Drain Current IDM - 240

Avalanche Current L = 0.1 mH IAS - 75

Single Pulse Avalanche EnergyaEAS 281 mJ

Power Dissipation

TC = 25 °C

375c

TA = 25 °Cb3.75

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Unit

Junction-to-Ambient PCB MountbRthJA 40 °C/W

Junction-to-Case RthJC 0.4

Available

RoHS*

COMPLIANT

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Document Number: 72439

S-80274-Rev. C, 11-Feb-08

Vishay Siliconix

SUM110P06-07L

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = - 250 µA - 60 V

Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3

Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA

Zero Gate Voltage Drain Current IDSS

VDS = - 60 V, VGS = 0 V - 1

µA

VDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50

VDS = - 60 V, VGS = 0 V, TJ = 175 °C - 250

On-State Drain CurrentaID(on) V

DS = - 5 V, VGS = - 10 V - 120 A

Drain-Source On-State ResistancearDS(on)

VGS = - 10 V, ID = - 30 A 0.0055 0.0069

VGS = - 10 V, ID = - 30 A, TJ = 125 °C 0.0115

VGS = - 10 V, ID = - 30 A, TJ = 175 °C 0.0138

VGS = - 4.5 V, ID = - 20 A 0.007 0.0088

Forward Transconductanceagfs VDS = - 15 V, ID = - 50 A 20 S

Dynamicb

Input Capacitance Ciss

VGS = 0 V, VDS = - 25 V, f = 1 MHz

11400

pFOutput Capacitance Coss 1200

Reverse Transfer Capacitance Crss 900

Total Gate ChargecQg

VDS = - 30 V, VGS = - 10 V, ID = - 110 A

230 345

Gate-Source ChargecQgs 50

Gate-Drain ChargecQgd 60

Gate Resistance Rgf = 1.0 MHz 3 Ω

Tur n - O n D e l ay Timectd(on)

VDD = - 30 V, RL = 0.27 Ω

ID ≅ - 110 A, VGEN = - 10 V, Rg = 2.5 Ω

20 30

Rise Timectr160 240

Turn-Off Delay Timectd(off) 200 300

Fall Timectf240 360

Source-Drain Diode Ratings and Characteristics TC = 25 °Cb

Continuous Current IS- 110 A

Pulsed Current ISM - 240

Forward VoltageaVSD IF = - 85 A, VGS = 0 V - 1.0 -1.5 V

Reverse Recovery Time trr

IF = - 85 A, di/dt = 100 A/µs

65 100 ns

Peak Reverse Recovery Charge IRM(REC) - 4.2 - 6.3 A

Reverse Recovery Charge Qrr 0.14 0.32 µC

Document Number: 72439

S-80274-Rev. C, 11-Feb-08

www.vishay.com

Vishay Siliconix

SUM110P06-07L

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

Transconductance

Capacitance

120

160

200

0246810

VDS - Drain-to-Source Voltage (V)

- Drain Current (A)

VGS = 10 thru 5 V

3 V

4 V

100

150

200

250

0 153045607590

ID - Drain Current (A)

- Transconductance (S)

125 °C

TC = - 55 °C

25 °C

2000

4000

6000

8000

10000

12000

14000

0 102030405060

VDS

- Drain-to-Source Voltage (V)

- Capacitance (pF)

Ciss

Coss Crss

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

120

160

200

012345

VGS

- Gate-to-Source Voltage (V)

- Drain Current (A)

25 °C

- 55 °C

TC = 125 °C

0.000

0.002

0.004

0.006

0.008

0.010

0.012

0.014

0.016

0 20 40 60 80 100 120

- On-Resistance (Ω)

- Drain Current (A)

rDS(on)

VGS = 10 V

VGS = 4.5 V

0 50 100 150 200 250 300 350 400 450

- Gate-to-Source Voltage (V)

- Total Gate Charge (nC)

VGS

= 30 V

= 110 A

www.vishay.com

Document Number: 72439

S-80274-Rev. C, 11-Feb-08

Vishay Siliconix

SUM110P06-07L

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

On-Resistance vs. Junction Temperature

Avalanche Current vs. Time

0.5

0.8

1.1

1.4

1.7

2.0

- 50 - 25 0 25 50 75 100 125 150 175

- Junction Temperature (°C)

VGS = 10 V

ID = 30 A

rDS(on) - On-Resistance

(Normalized)

tin (s)

1000

0.00001 0.001 0.1 1

100

(A)I Dav

0.010.0001

IAV (A) at TA = 25 °C

IAV (A) at TA = 150 °C

0.1

Source-Drain Diode Forward Voltage

Drain Source Breakdown vs.

Junction Temperature

0.0 0.3 0.6 0.9 1.2

VSD

- Source-to-Drain Voltage (V)

- Source Current (A)IS

100

TJ = 25 °C

TJ = 150 °C

- 50 - 25 0 25 50 75 100 125 150 175

- Junction Temperature (°C)

(V)V(BR)DSS

ID = 250 µA

Document Number: 72439

S-80274-Rev. C, 11-Feb-08

www.vishay.com

Vishay Siliconix

SUM110P06-07L

THERMAL RATINGS

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http://www.vishay.com/ppg?72439.

Maximum Avalanche and Drain Current

vs. Case Temperature

100

150

200

0 25 50 75 100 125 150 175

TC - Case Temperature (°C)

- Drain Current (A)

Package Limited

Safe Operating Area

1000

0.1 1 10 100

Limited by r (

0.1

- Drain Current (A)I

10 µs

100 µs

TC = 25 °C

Single Pulse

100 ms, DC

10 ms

100

VDS - Drain-to-Source Voltage (V)

* VGS minimum VGS at which rDS(on) is specified

1 ms

DS on)*

Normalized Thermal Transient Impedance, Junction-to-Case

Square Wave Pulse Duration (s)

0.1

0.01

10-4 10-3 10-2 10-1

Normalized Effective Transient

Thermal Impedance

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 62.5 °C/W

3. TJM - TA = PDMZthJA(t)

Notes:

4. Surface Mounted

PDM

Document Number: 71198 www.vishay.com

Revison: 03-Jan-11 1

Package Information

Vishay Siliconix

TO-263 (D2PAK): 3-LEAD

Notes

1. Plane B includes maximum features of heat sink tab and plastic.

2. No more than 25 % of L1 can fall above seating plane by max.

8 mils.

3. Pin-to-pin coplanarity max. 4 mils.

4. *: Thin lead is for SUB, SYB.

Thick lead is for SUM, SYM, SQM.

5. Use inches as the primary measurement.

6. This feature is for thick lead.

DETAIL A (ROTATED 90°) SECTION A-A

-A-

-B-

0° - 5°

eb2

EAc2

Detail “A”

0.010

2 PL

INCHES MILLIMETERS

DIM. MIN. MAX. MIN. MAX.

A 0.160 0.190 4.064 4.826

b 0.020 0.039 0.508 0.990

b1 0.020 0.035 0.508 0.889

b2 0.045 0.055 1.143 1.397

c* Thin lead 0.013 0.018 0.330 0.457

Thick lead 0.023 0.028 0.584 0.711

c1 Thin lead 0.013 0.017 0.330 0.431

Thick lead 0.023 0.027 0.584 0.685

c2 0.045 0.055 1.143 1.397

D 0.340 0.380 8.636 9.652

D1 0.220 0.240 5.588 6.096

D2 0.038 0.042 0.965 1.067

D3 0.045 0.055 1.143 1.397

E 0.380 0.410 9.652 10.414

E1 0.245 - 6.223 -

E2 0.355 0.375 9.017 9.525

E3 0.072 0.078 1.829 1.981

e 0.100 BSC 2.54 BSC

K 0.045 0.055 1.143 1.397

L 0.575 0.625 14.605 15.875

L1 0.090 0.110 2.286 2.794

L2 0.040 0.055 1.016 1.397

L3 0.050 0.070 1.270 1.778

L4 0.010 BSC 0.254 BSC

M - 0.002 - 0.050

ECN: T10-0738-Rev. J, 03-Jan-11

DWG: 5843

AN826

Vishay Siliconix

Document Number: 73397

11-Apr-05

www.vishay.com

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

0.635

(16.129)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.420

(10.668)

0.355

(9.017)

0.145

(3.683)

0.135

(3.429)

0.200

(5.080)

0.050

(1.257)

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Revision: 02-Oct-12 1Document Number: 91000

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