©2000 Fairchild Semiconductor International Rev. A, February 2000
BDW93/A/B/C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Thermal Charac teris tics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BDW93
: BDW93A
: BDW93B
: BDW93C
45
60
80
100
V
V
V
V
VCEO Collector-Emitter Voltage: BDW93
: BDW93A
: BDW93B
: BDW93C
45
60
80
100
V
V
V
V
IC Collector Current (DC) 12 A
ICP *Collector Current (Pulse) 15 A
IB Base Current 0.2 A
PC Collector Dissipation (TC=25°C) 80 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Value Units
Rθjc Thermal Resistance Junction to Case 1.5 °C/W
BDW93/A/B/C
Hammer Drivers,
Audio Amplifiers Applications
• Power Darlington TR
• Complement to BDW94, BDW94A, BDW94B and BDW94C respectively
1.Base 2.Collector 3.Emitter
1TO-220
©2000 Fairchild Semiconductor International Rev. A, February 2000
BDW93/A/B/C
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO(sus) * Collector-Emitter Sustaining Voltage
: BDW93
: BDW93A
: BDW93B
: BDW93C
IC = 100mA, IB = 0 45
60
80
100
V
V
V
V
ICBO Collector Cut-off Current: BDW93
: BDW93A
: BDW93B
: BDW93C
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
100
100
100
100
µA
µA
µA
µA
ICEO Collector Cut-off Current: BDW93
: BDW93A
: BDW93B
: BDW93C
VCE = 45V, IB = 0
VCE = 60V, IB = 0
VCE = 80V, IB = 0
VCE = 100V, IB = 0
1
1
1
1
mA
mA
mA
mA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA
hFE * DC Current Gain VCE = 3V, IC = 3A
VCE = 3V, IC = 5A
VCE = 3V, IC = 10A
1000
750
100 20000
VCE(sat) * Collector-Emitter Saturation Voltage IC = 5A, IB = 20mA
IC = 10A, IB = 100mA 2
3 V
V
VBE(sat) * Base-Emitter Saturation Voltage IC = 5A, IB = 20mA
IC = 10A, IB = 100mA 2.5
4 V
V
VF* Parallel Diode Forward Voltage IF = 5A
IF = 10A 1.3
1.8 2
4 V
V
©2000 Fairchild Semiconductor International
BDW93/A/B/C
Rev. A, February 2000
Typical character istics
Figure 1. DC Current Gain Figure 2 . C o llect or -Emitte r Satura tion Voltage
Figure 3. Base-Emitter On Voltage Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
0.1 1 10 100
100
1k
10k
100k
VCE = 3V
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
0.1 1 10 100
0.1
1
10
IC= 250 IB
VCE(sat) [V], SATURATION VOLTAGE
IC [A], COLLECTOR CURRENT
0.0 0.8 1.6 2.4 3.2 4.0
0
4
8
12
16
20
VCE = 3 V
IC [A], COLLECTOR CURRENT
VBE [V], BASE-EMITTER VOLTAGE
110100
10
100
1000 f=1MHz
IE=0
Cob [pF], OUTPUT CAPACTIANCE
VCB [V], COLLECTOR-BASE VOLTAGE
1 10 100 1000
0.1
1
10
100
100 us
1 ms5 ms
DC
IC MAX.
BDW93B
BDW93C
BDW93
BDW93A
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
20
40
60
80
100
PD [W], POWER DISSIPATION
TC [oC], CASE TEMPERATURE
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BDW93/A/B/C
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
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Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
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