2N6294 2N6295 2N6296 2N6297 NPN PNP w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6294, 2N6296 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICEV ICEV ICEO IEBO BVCEO BVCEO VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hfe fT Cob Cob SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6294 2N6296 60 60 CHARACTERISTICS: (TC=25C unless otherwise noted) TEST CONDITIONS MIN VCE=Rated VCEO, VEB=1.5V VCE=Rated VCEO, VEB=1.5V, TC=150C VCE=1/2Rated VCEO VEB=5.0V IC=50mA, (2N6294, 2N6296) 60 IC=50mA, (2N6295, 2N6297) 80 IC=2.0A, IB=8.0mA IC=4.0A, IB=40mA IC=4.0A, IB=40mA VCE=3.0V, IC=2.0A VCE=3.0V, IC=2.0A 750 VCE=3.0V, IC=4.0A 100 VCE=3.0V, IC=1.5A, f=1.0kHz 300 VCE=3.0V, IC=1.5A, f=1.0MHz 4.0 VCB=10V, IE=0, f=100kHz (NPN types) VCB=10V, IE=0, f=100kHz (PNP types) 2N6295 2N6297 80 80 5.0 4.0 8.0 80 50 -65 to +200 UNITS V V V A A mA W C 3.5 C/W MAX 0.5 5.0 0.5 2.0 UNITS mA mA mA mA V V V V V V 2.0 3.0 4.0 2.8 18K 120 200 MHz pF pF R1 (18-September 2012) 2N6294 2N6295 2N6296 2N6297 NPN PNP COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R1 (18-September 2012) w w w. c e n t r a l s e m i . c o m