J/SST111 Series
Vishay Siliconix
Document Number: 70232
S-04028—Rev. E, 04-Jun-01 www.vishay.com
7-1
N-Channel JFETs J111 SST111
J112 SST112
J113 SST113
PRODUCT SUMMARY
Part Number VGS(off) (V) rDS(on) Max (W)ID(off) Typ (pA) tON Typ (ns)
J/SST111 –3 to –10 30 5 4
J/SST112 –1 to –5 50 5 4
J/SST113 v–3 100 5 4
FEATURES BENEFITS APPLICATIONS
DLow On-Resistance: 111 < 30 W
DFast Switching—tON: 4 ns
DLow Leakage: 5 pA
DLow Capacitance: 3 pF
DLow Insertion Loss
DLow Error Voltage
DHigh-Speed Analog Circuit Performance
DNegligible “Off-Error,” Excellent Accuracy
DGood Frequency Response, Low Glitches
DEliminates Additional Buffering
DAnalog Switches
DChoppers
DSample-and-Hold
DNormally “On” Switches
DCurrent Limiters
DESCRIPTION
The J/SST111 series consists of all-purpose analog switches
designed to support a wide range of applications. The
J/SST113 are useful in a high-gain amplifier mode.
The J series, TO-226AA (TO-92) plastic package, provides
low cost, while the SST series, TO236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
For similar products in TO-206AA(TO-18) packaging, see the
2N/PN/SST4391 series, 2N4856A/4857A/4858A, and
2N5564/5565/5566 (duals) data sheets.
TO-226AA (TO-92)
Top View
J111
J112
J113
D
G
S
1
2
3
D
S
G
TO-236 (SOT-23)
2
3
1
Top View
SST111 (C1)*
SST112 (C2)*
SST113 (C3)*
*Marking Code for TO-236
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage –35 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 seconds) 300 _C. . . . . . . . . . . . . .
Storage Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipationa
(TO-236) 350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(TO-226AA) 360 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.8 mW/_C above 25_C
For applications information see AN105.
J/SST111 Series
Vishay Siliconix
www.vishay.com
7-2 Document Number: 70232
S-04028—Rev. E, 04-Jun-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST111 J/SST112 J/SST113
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage V(BR)GSS IG = –1 mA , VDS = 0 V –55 –35 –35 –35 V
Gate-Source Cutoff Voltage VGS(off) VDS = 5 V, ID = 1 mA–3–10 –1 –5–3V
Saturation Drain CurrentbIDSS VDS = 15 V, VGS = 0 V 20 5 2 mA
VGS = –15 V, VDS = 0 V –0.005 –1–1–1
Gate Reverse Current IGSS TA = 125_C–3nA
Gate Operating Current IGVDG = 15 V, ID = 10 mA –5 pA
VDS = 5 V, VGS = –10 V 0.005 1 1 1
Drain Cutoff Current ID(off) TA = 125_C3nA
Drain-Source On-Resistance rDS(on) VGS = 0 V, VDS = 0.1 V 30 50 100 W
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source Forward
Transconductance gfs VDS = 20 V, ID = 1 mA 6 mS
Common-Source
Output Conductance gos
VDS = 20 V, ID = 1 mA
f = 1 kHz 25 mS
Drain-Source On-Resistance rds(on) VGS = 0 V, ID = 0 mA
f = 1 kHz 30 50 100 W
Common-Source
Input Capacitance Ciss VDS = 0 V, VGS = -10 V 7 12 12 12
Common-Source Reverse Transfer
Capacitance Crss
VDS = 0 V, VGS =
-10
V
f = 1 MHz 3 5 5 5 pF
Equivalent Input
Noise Voltage enVDG = 10 V, ID = 1 mA
f = 1 kHz 3nV⁄
√Hz
Switching
td(on) 2
T urn-On Time trVDD = 10 V, VGS(H) = 0 V 2
td(off)
VDD = 10 V, VGS(H) = 0 V
See Switching Circuit 6ns
Turn-Off Time tf15
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NCB
b. Pulse test: PW v300 ms duty cycle v3%.
J/SST111 Series
Vishay Siliconix
Document Number: 70232
S-04028—Rev. E, 04-Jun-01 www.vishay.com
7-3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
160
120
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage On-Resistance vs. Drain Current
100
0–10
0
200
160
0
rDS IDSS
rDS @ ID = 1 mA, VGS = 0
IDSS @ VDS = 20 V, VGS = 0
100
0
1 10 100
VGS(off) = –2 V
–4 V
–8 V
TA = 25°C
On-Resistance vs. Temperature
200
–55 25 125
0–15 85
ID = 1 mA
rDS changes X 0.7%/_C
VGS(off) = –2 V
–4 V
–8 V
Turn-On Switching
5
0–10
4
3
2
1
0
tr
Switching T ime (ns)
td(on) @
ID = 3 mA
td(on) @
ID = 12 mA
tr approximately independent of ID
VDD = 5 V, RG = 50 Ω
VGS(L) = –10 V
Turn-Off Switching
30
010
24
18
12
6
0
tf @
VGS(off) = –2 V
tf @
VGS(off) = –8 V
td(off)
td(off) independent of device VGS(off)
VDD = 5 V, VGS(L) = –10 V
Capacitance vs. Gate-Source Voltage
30
–20
24
18
12
6
0
Capacitance (pF)
f = 1 MHz
Ciss @ VDS = 0 V
Crss @ VDS = 0 V
0
VGS(off) – Gate-Source Cutof f Voltage (V)
TA – Temperature ( _C)
VGS – Gate-Source Voltage (V)
VGS(off) – Gate-Source Cutoff Voltage (V)
ID – Drain Current (mA)
ID – Drain Current (mA)
80
60
40
20
80
40
80
60
40
20
–2–4–6–8
–35
120
80
40
5 45 65 105 –2–4–6–8
2468 –4–8–12 –16
Switching T ime (ns) rDS(on) – Drain-Source On-Resistance ( Ω )
IDSS – Saturation Drain Current (mA)
rDS(on) – Drain-Source On-Resistance ( Ω )
rDS(on) – Drain-Source On-Resistance ( Ω )
J/SST111 Series
Vishay Siliconix
www.vishay.com
7-4 Document Number: 70232
S-04028—Rev. E, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
1 pA
Noise Voltage vs. Frequency
100
10
110 100 1 k 100 k10 k
ID = 10 mA
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
50
0
0–2–10
500
250
0
gos – Output Conductance
gfs gos
gfs and gos @ VDS = 20 V
VGS = 0 V, f = 1 kHz
Gate Leakage Current
030
1 nA
100 pA
10 pA
0.1 pA
TA = 125_C
TA = 25_C
1 mA
IGSS @ 25_C
10 nA
ID = 10 mA
Common-Gate Input Admittance
100
10
1
0.1100 1000200 500
(mS)
gig
big
VDG = 10 V
ID = 10 mA
TA = 25_C
Common-Gate Forward Admittance Common-Gate Reverse Admittance
100
10
1
0.1100 1000200 500
(mS)
–gfg bfg
gfg
VDG = 10 V
ID = 10 mA
TA = 25_C
10
1.0
0.1
0.01100 1000200 500
VDG = 10 V
ID = 10 mA
TA = 25_C
–grg
–brg
+grg
(mS)
VDG – Drain-Gate Voltage (V)
VGS(off) – Gate-Source Cutoff Voltage (V)f – Frequency (Hz)
f – Frequency (MHz)
f – Frequency (MHz) f – Frequency (MHz)
40
30
20
10
–4–6–8
IGSS @ 125_C
10 mA
1 mA
6 121824
VDS = 10 V
ID = 1 mA
(mS)
gfs – Forward Transconductance (mS)
en – Noise Voltage nV / Hz
IG – Gate Leakage
J/SST111 Series
Vishay Siliconix
Document Number: 70232
S-04028—Rev. E, 04-Jun-01 www.vishay.com
7-5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
100
010
80
60
40
20
0
VDS – Drain-Source Voltage (V)
2468
Common-Gate Output Admittance
100
10
1
0.1100 1000200 500
(mS)
VDG = 10 V
ID = 10 mA
TA = 25_C
f – Frequency (MHz)
Output Characteristics
40
0 1.0
32
24
16
8
0
VDS – Drain-Source Voltage (V)
0.2 0.4 0.6 0.8
Transfer Characteristics
100
0–5
80
60
40
20
0
VGS – Gate-Source Voltage (V)
–1–2–3–4
gog
bog
VGS = 0 V
–0.5
–1.0
–1.5
–2.0
–2.5
VGS(off) = –4 V
VGS(off) = –4 V
VGS = 0 V
–0.5
–1.0
–1.5
–2.0
–2.5
–3.0
VGS(off) = –4 V
TA = –55_C
25_C
125_C
VDS = 20 V
ID – Drain Current (mA)ID – Drain Current (mA)
ID – Drain Current (mA)
SWITCHING TIME TEST CIRCUIT
J/SST111 J/SST112 J/SST113
VGS(L) –12 V –7 V –5 V
RL*800 W1600 W3200 W
ID(on) 12 mA 6 mA 3 mA
*Non-inductive
INPUT PULSE SAMPLING SCOPE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
51 W
51 W
1 kW
VGS
Scope
VDD
RL
OUT
VGS(H)
VGS(L)
