MBR2530CT thru MBR2540CT
Symbol Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=130 C
IFSM
Maximum Ratings
30
150
A
A
Unit
o
Maximum Forward Voltage
(Per Leg) At (Note 1)
IF=15A @TJ=25 C
IF=15A @TJ=125 C
IF=30A @TJ=25 C
IF=30A @TJ=125 C
VF
IRMaximum DC Reverse Current
At Rated DC Blocking Voltage @TJ=25 C
@TJ=125 C
CJTypical Junction Capacitance Per Element (Note 3)
TJOperating Temperature Range
-
-
0.82
0.73
0.2
40
1.5
450
-55 to +150
-55 to +175
V
mA
pF
o
o
o
o
o
Typical Thermal Resistance (Note 2)ROJC C/W
o
C
o
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
o
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
MBR2530CT
MBR2535CT
MBR2540CT
VRRM
V
30
35
40
VRMS
V
21
24.5
28
VDC
V
30
35
40
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
dv/dt Voltage Rate Of Change (Rated VR) 10000 V/us
C
o
TSTG Storage Temperature Range
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
A=Anode, C=Cathode, TAB=Cathode
A
A
C
C(TAB)
A C A Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Dimensions TO-220AB
MBR2530CT thru MBR2540CT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
FIG.5 - TYPICAL JUNCTI ON CAPACIT ANCE
CAPACI TANCE , (pF)
REVERS E VOLTAG E , VO LTS
10
1100
10000
1000
100 0.1 4
TJ= 25 C, f= 1MHz
PERCENT OF RATED PEAK REVERSE VOL TAGE ,(%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40 120 140
0
0.001
0.1
1.0
100.0
10.0
60 80 100
TJ= 125 C
0.01
TJ= 25 C
TJ= 75 C
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.1 0.2 0.6 0.7
0.1
10
100
0.3 0.4 0.5
0.01 0.9
0.8
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
INSTANTANEOUS FORWARD CURRENT ,(A)
0
PULSE WIDTH 300us
2% Duty cycle
TJ= 25 C
1.0
TJ= 150 C
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CY CLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 100220
0
25
50
75
100
125
150
FIG.1 - FORWARD CURRENT DERATING CURVE
AV ERAG E F O RWARD CURRE NT
AMPERE S
8.3ms Single Half-Sine-Wav e
(JEDEC METHOD)
CASE TEMPERA TURE , C
25 75 100 125 150
10
050
40
175
30
0
20
RESISTIVE OR
INDU C TIVE LO AD
