2N5884
PNP Silicon
Complementary
Power Transistor
Features
• This device is designed for general-purpose power amplifier and
switching applications.
Maximum Ratings (1)
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 80 V
VCBO Collector-Base Voltage 80 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current, Continuous
Peak 25
50 A
IB Base Current 7.5 A
TJ Operating Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Thermal Characteristics
Symbol Rating Max Unit
PD Total Device Dissipation
Derate above 25OC 200
1.15 W
W/OC
RJC Thermal Resistance, Junction to Case 0.875 OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
VCEO(sus) Collector-Emitter Breakdown Voltage (2)
(IC=200mAdc, IE=0) 80 --- Vdc
ICEO Collector Cutoff Current
(VCE=40Vdc, IB=0) --- 2.0 mAdc
ICEX Collector Cutoff Current
(VCE=80Vdc, VBE(off)=1.5Vdc)
(VCE=80Vdc, VBE(off)=1.5Vdc, TC=150
OC) ---
--- 1.0
10 mAdc
ICBO Collector Cutoff Current
(VCB=80Vdc, IE=0) --- 1.0 mAdc
IEBO Emitter Cutoff Current
(VEB=5.0Vdc, IC=0) --- 1.0 mAdc
ON CHARACTERISTICS
hFE DC Current Gain (2)
(VCE=4.0Vdc, IC=3.0Adc)
(VCE=4.0Vdc, IC=10A)
(VCE=4.0Vdc, IC=25A)
35
20
4.0
---
100
---
---
VCE(sat) Collector-Emitter Saturation Voltage (2)
(IC=15Adc, IB=1.5Adc)
(IC=25Adc, IB=6.25Adc) ---
--- 1.0
4.0 Vdc
VBE(sat) Base-Emitter Saturation Voltage (2)
(IC=25Adc, IB=6.25Adc) --- 2.5 Vdc
VBE(on) Base-Emitter On Voltage (2)
(IC=10Adc, VCE=4.0Vdc) --- 1.5 Vdc
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
TO-3
A
N
E
D
C
K
PIN 1. BASE
PIN 2. EMITTER
CASE. COLLECTOR
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A 1.550 REF 39.37 REF
B ----- 1.050 ----- 26.67
C .250 .335 6.35 8.51
D .038 .043 0.97 1.09
E 0.55 0.70 1.40 1.77
G .430 BSC 10.92 BSC
H .215 BSC 5.46 BSC
K .440 .480 11.18 12.19
L .665 BSC 16.89 BSC
N ----- .830 ----- 21.08
Q .151 .165 3.84 4.19 ∅
U 1.187 BSC 30.15 BSC
V .131 .188 3.33 4.77
H
V
U
L
G
B
Q
1
2
omponents
20736 Marilla Street Chatsworth
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Revision: 2 2003/04/30
Symbol Parameter Min Max Units
DYNAMIC CHARACTERISTICS
fT Current-Gain—Bandwidth Product (3)
(IC=1.0Adc, VCE=10Vdc, f=1.0MHz) 4.0 --- MHz
Cob Output Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz) --- 1000 pF
hfe Small-Signal Current Gain
(IC=3.0Adc, VCE=4.0Vdc, f=1.0KHz) 20 --- ---
SWITCHING CHARACTERISTICS
tr Rise Time --- 0.7 us
ts Storage Time --- 1.0 us
tf Fall Time (VCC=30Vdc, IC=10Adc, IB1=IB2=1.0Adc) --- 0.8 us
3. fT=|hfe| X ftest
MCC
2N5884
200
00 25 50 75 100 125 150 200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
175
100
75
50
125
150
25
175
1000
0.3
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT (AMPERES)
10 0.5 0.7 1.0 3.0 5.0 7.0 10 30
70
30
20
100
50
h
FE,
DC
CURRENT
GAIN
200
300
VCE = 4.0 V
2.0 20
700
500 TJ = 150°C
25°C
-55°C
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Revision: 2 2003/04/30