A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 50 mA 65 V
BVCEO IC = 50 mA 35 V
BVEBO IE = 10 mA 4.0 V
ICES VCE = 28 V 10 mA
hFE VCE = 5.0 V IC = 1.0 A 10 200 ---
COB VCB = 30 V f = 1.0 MHz 80 pF
GP
ηC
IMD3
VCE = 28 V POUT = 25 W (PEP) f = 30 MHz 22
35
-30
dB
%
dBc
NPN SILICON RF POWER TRANSISTOR
MRF426
DESCRIPTION:
The ASI MRF426 is Designed for
high gain amplifier applications up to
30 MHz.
FEATURES:
• PG = 22 dB min. at 25 W/30 MHz
• IMD3 = -30 dBc max. at 25 W(PEP)
• Omnigold™ Metalization System
• Available as matched pairs.
MAXIMUM RATINGS
IC 3.0 A
VCBO 65 V
VCEO 35 V
VEBO 4.0 V
PDISS 70 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θJC 2.5 °C/W
PACKAGE STYLE .380 4L FLG
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.89
inches / mm
H.160 / 4.06 .180 / 4.57
DIM
.220 / 5.59 .230 / 5.84
.105 / 2.67.085 / 2.16
I
J.240 / 6.10 .255 / 6.48
.785 / 19.94
F
B
G
.125
Ø.125 NOM.
FULL R
D E
C
H
.112 x 45° A
I
J
.004 / 0.10 .006 / 0.15
.280 / 7.11
.720 / 18.29 .730 / 18.54
E
E C
B
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 2/2
ERROR! REFERENCE SOURCE NOT FOUND.
Specifications are subject to change without notice.
MRF426
