TLP131
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Toshiba Electronic Devices & Storage Corporation
TOSHIBA Photocoupler IRED & Photo-Transistor
TLP131
Programmable Controllers
AC / DC-Input Module
Telecommunication
The TOSHIBA mini flat coupler TLP131 is a small outline coupler, suitable for
surface mount assembly.
TLP131 consists of a photo transistor, optically coupled to an infrared
emitting diode.
• Collector-emitter voltage: 80 V (min)
• Current transfer ratio: 50% (min)
Rank GB: 100% (min)
• Isolation voltage: 3750 Vrms (min)
• UL-recognized: UL 1577, File No.E67349
• cUL-recognized: CSA Component Acceptance Service No.5A
File No.E67349
TLP131 base terminal is for the improvement of speed, reduction of dark
current, and enable operation. Using by base terminal opening is easy to
receive the outside noise.
Pin Configurations (top view)
1 : Anode
3 : Cathode
4 : Emitter
5 : Collector
6 : Base
5
4
3
1
6
Unit:
mm
TOSHIBA
11-4C2
Weight: 0.09 g (typ.)
Start of commercial production
1988-04
TLP131
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Toshiba Electronic Devices & Storage Corporation
Current Transfer Ratio
Classification
Current Transfer Ratio (%)
(IC/IF)
Marking Of Classification
IF = 5 mA, VCE = 5 V, Ta = 25°C
Min Max
Blank 50 600 Blank, Y, Y■, YE, G, G■, GR, B, B■, BL, GB
Rank Y 50 150 YE
Rank GR 100 300 GR
Rank BL 200 600 BL
Rank GB 100 600 GB
Rank YH 75 150 Y■
Rank GRL 100 200 G
Rank GRH 150 300 G■
Rank BLL 200 400 B
Note: Please ask your local retailer about the devices with Rank Y or Rank BL.
Note: Application type name for certiffication test,please use standard product type name,i.e.
TLP131(GB): TLP131
TLP131
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Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
LED
Forward current IF 50 mA
Forward current derating (Ta ≥ 53°C) ΔIF/°C -0.7 mA/°C
Peak forward current (100 μs pulse, 100 pps) IFP 1 A
Reverse voltage VR 5 V
Diode power dissipation
PD
100
mW
Diode power dissipation derating (Ta ≥ 53°C)
ΔPD/°C
-1.39
mW/°C
Junction temperature Tj 125 °C
Detector
Collector-emitter voltage VCEO 80 V
Collector-base voltage VCBO 80 V
Emitter-collector voltage VECO 7 V
Emitter-base voltage VEBO 7 V
Collector current IC 50 mA
Peak collector current (10 ms pulse, 100 pps) ICP 100 mA
Power dissipation PC 150 mW
Power dissipation derationg (Ta ≥ 25°C)
ΔPC/°C -1.5 mW/°C
Junction temperature Tj 125 °C
Storage temperature range Tstg -55 to 125 °C
Operating temperature range Topr -55 to 100 °C
Lead soldering temperature (10 s) Tsol 260 °C
Total package power dissipation PT 200 mW
Total package power dissipation derating (Ta ≥ 25°C) ΔPT/°C -2.0 mW/°C
Isolation voltage (AC, 60 s, RH ≤ 60 %) (Note 1)
BVS 3750 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two terminal device: Pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted
together.
TLP131
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Recommended Operating Conditions
Characteristics Symbol Min Typ. Max Unit
Supply voltage VCC ― 5 48 V
Forward current IF ― 16 25 mA
Collector current IC ― 1 10 mA
Operating temperature Topr -25 ― 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
LED
Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V
Reverse current IR VR = 5 V ― ― 10 μA
Capacitance CT V = 0 V, f = 1 MHz ― 30 ― pF
Detector
Collector-emitter
breakdown voltage V(BR)CEO IC = 0.5 mA 80 ― ― V
Emitter-collector
breakdown voltage V(BR)ECO IE = 0.1 mA 7 ― ― V
Collector-base breakdown voltage V(BR)CBO IC = 0.1 mA 80 ― ― V
Emitter-base breakdown voltage V(BR)EBO IE = 0.1 mA 7 ― ― V
collector dark current ICEO
VCE = 48 V ― 10 100 nA
VCE = 48 V, Ta = 85 °C ― 2 50 μA
Collector dark current ICER VCE = 48 V, Ta = 85 °C
RBE = 1 MΩ ― 0.5 10 μA
Collector dark current ICBO VCB = 10 V ― 0.1 ― nA
DC forward current gain hFE VCE = 5 V, IC = 0.5 mA ― 400 ― ―
Capacitance (collector to emitter) CCE V = 0 V, f = 1 MHz ― 10 ― pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Current transfer ratio IC/IF
IF = 5 mA, VCE = 5 V
Rank GB
50 ― 600
%
100 ― 600
Saturated CTR IC/IF(sat)
IF = 1 mA, VCE = 0.4 V
Rank GB
― 60 ―
%
30 ― ―
Base photo-current IPB IF = 5 mA, VCB = 5 V ― 10 ― μA
Collector-emitter
saturation voltage VCE(sat)
IC = 2.4 mA, IF = 8 mA ― ― 0.4
V
IC = 0.2 mA, IF = 1 mA
Rank GB
― 0.2 ―
― ― 0.4
Off-state collector current IC(off) IF = 0.7 mA, VCE = 48 V ― 1 10 μA
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Isolation Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Capacitance (input to output) CS VS = 0 V, f = 1 MHz ― 0.8 ― pF
Isolation resistance RS VS = 500 V, RH ≤ 60 % 5×1010 1014 ― Ω
Isolation voltage BVS AC, 60 s 3750 ― ― Vrms
Switching Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Rise time tr
VCC = 10 V, IC = 2 mA
RL = 100 Ω
― 2 ―
μs
Fall time tf ― 3 ―
Turn-on time ton ― 3 ―
Turn-off time toff ― 3 ―
Turn-on time tON RL = 1.9 kΩ (Fig.1)
RBE = OPEN
VCC = 5 V, IF = 16 mA
― 2 ―
μs
Storage time ts ― 25 ―
Turn-off time tOFF ― 40 ―
Turn-on time tON RL = 1.9 kΩ (Fig.1)
RBE = 220 kΩ
VCC = 5 V, IF = 16 mA
― 2 ―
μs
Storage time ts ― 20 ―
Turn-off time tOFF ― 30 ―
Fig. 1 Switching time test circuit
VCC
VCE
IF
tON tOFF
tS
4.5V
0.5V
IF VCC
VCE
RL
RBE
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IF – Ta
Ambient temperature Ta (°C)
Forward current
IF (mA)
0
100
-20
80
60
40
20
0 20 40 60 80 120 100
PC – Ta
Ambient temperature Ta (°C)
Collector power dissipation
PC (mW)
200
0
-20
160
120
80
40
0 20 40 60 80 120 100
∆VF / ∆Ta – IF
Forward current IF (mA)
Forward voltage temperature coefficient
∆VF / ∆Ta (m V / °C)
−3.2
−0.4
0.1
−0.8
−2.8
−2.0
−1.6
−1.2
0.3
−2.4
1 5 50 0.5 3 10 30
IF – VF
Forward voltage VF (V)
Forward current IF (mA)
100
0.1
0.6
50
5
1
0.5
0.8 1.0 1.2 1.4 1.6 1.8
30
10
3
0.3
Ta = 25°C
IFP – VFP
Pulse forward voltage VFP (V)
Pulse forward current IFP (mA)
1000
1.0 1.4 1.8 2.2 2.6 3.0
1
500
300
100
50
30
10
5
3
Pulse width ≤ 10μs
Repetitive
Frequency = 100Hz
Ta = 25°C
IFP – DR
Duty cycle ratio DR
Pulse forward current
IFP (mA)
3000
10
30
1000
300
10−3
500
10−2 10−1 100
100
50
Pulse width ≤ 100μs
Ta = 25°C
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
TLP131
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IC – VCE
IC – VCE
Collector–emitter voltage V
CE
(V)
Collector current I
C (mA)
30
0
0
20
10
0.2 0.4 0.6 0.8 1.0
IF = 50mA
40mA
30mA
20mA
10mA
5mA
2mA
Ta = 25°C
Collector–emitter voltage V
CE
(V)
Collector current I
C (mA)
20mA
50
0
0
40
30
0
20
10
2 4 6 8 10
Ta = 25°C
50mA
30mA
15mA
10mA
PC(MAX.)
IF = 5mA
I
PB
– I
F
Forward current IF (mA)
IC – IF
Collector current IC (mA)
100
0.1
0.3
0.3
50
10
1
0.5
0.5
30
3 10 100 1 5 50 30
3
5
VCE = 10V
VCE = 5V
VCE = 0.4V
Ta = 25°C
SAMPLE A
SAMPLE B
IC / IF – IF
Forward current IF (mA)
Current transfer ratio IC / IF (%)
1000
0.3
50
300
100
0.5
500
3 10 100 1 5 30 50
SAMPLE B
Ta = 25°C
VCE = 10V
VCE = 5V
VCE = 0.4V
SAMPLE A
IC – IF at RBE
Forward current IF (mA)
Collector current IC (mA)
100
0.1
0.1
5
30
1
0.3
50
3 10 100 1 5 30 50
10
3
0.3
0.5
0.5
A
VCC
IF
RBE
RBE = ∞ 500kΩ 100kΩ
50kΩ
Ta = 25°C
VCE = 5V
Forward current IF (mA)
Base photo current IPB (μA)
300
0.1
0.1
3
30
1
0.5
100
3 10 100 1 5 30 50
10
0.3
0.3
Ta = 25°C
VCB
IF
A
VCB = 0V
VCB = 5V
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
TLP131
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Toshiba Electronic Devices & Storage Corporation
VCE(sat) – Ta
Ambient temperature Ta (°C)
Collector–emitter saturation
voltage VCE(sat) (V)
0.24
0
−40
0.20
0.16
0.12
0.04
−20 0 20 40 60 100 80
0.08
IF = 5mA
Ic = 1mA
IC – Ta
Ambient temperature Ta (°C)
Collector current I
C (mA)
100
0.1
-20
50
30
10
5
0 20 40 60 80 100
3
1
0.3
0.5
10mA
5mA
0.5mA
1mA
VCE = 5V
IF = 25mA
101
10−4
0 20 40 60 80 100 120
100
10−1
10−2
10−3
ICEO – Ta
Collector dark current ICEO (μA)
Ambient temperature Ta (°C)
5V
VCE = 48V
10V
24V
Switching Time – RL
Load resistance RL (kΩ)
Switching time (μs)
1
1
30
300
100
50
3 10 30 50 100 5
3
5
10
tOFF
tON
Ta = 25°C
IF = 16mA
VCC = 5V
RBE = 220kΩ
ts
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
TLP131
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Toshiba Electronic Devices & Storage Corporation
1
1
30
500
300
100
50
3 10 30 50 100
5
3
5
10
Ta = 25°C
IF = 16mA
VCC = 5V
tOFF
tON
ts
Switching Time – RBE
Base-emitter resistance R
BE
(Ω)
Switching time (
μs)
1000
1
100k
30
500
300
100
50
300k 1M 3M ∞
3
5
10
t
OFF
t
ON
ts
Ta = 25°C
IF = 16mA
VCC = 5V
RL = 1.9kΩ
Switching time (
μs)
1000
Switching Time – RL
Load resistance R
L
(kΩ)
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
TLP131
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Toshiba Electronic Devices & Storage Corporation
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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
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