7 a SGS-THOMSON MICROELECTRONICS TYN 682 ---> TYN 692 FEATURES = HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT = HIGH STABILITY AND RELIABILITY DESCRIPTION The TYN 682 ---> TYN 692 Family Silicon Control- led Rectifiers are high performance glass passi- vated chips technology. This general purpose Family Silicon Controlled TO220AB Rectifiers is designed for power supply up to (Plastic) 400Hz on resistive or inductive load. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current Te = 105 C 20 A (180 conduction angle) IT(AV) Average on-state current Te = 105 C 13 A (180 conduction angle, single phase circuit) ITSM Non repetitive surge peak on-state current tp = 8.3 ms 260 A ( Tj initial = 25C ) tp = 10 ms 250 2t I2t value tp = 10 ms 310 A2s dl/dt Critical rate of rise of on-state current 100 A/lus Gate supply : lq =100mA_ diG/dt = 1 A/us Tstg Storage and operating junction temperature range - 40 to+ 150 C Tj - 40 to+ 125 C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm 260 C from case Symbol Parameter TYN Unit 682 683 685 688 690 692 VDRM Repetitive peak off-state voltage 50 100 200 400 600 800 Vv VRRM Tj = 125C 1/4 March 1995 TYN 682 ---> TYN 692 THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-a) |Junction to ambient 60 C/W Rth (j-c) DC |Junction to case for DC 1.3 C/W GATE CHARACTERISTICS (maximum values) Pg (AV) = 1W Pgm = 10W (tp =20 us) IFqGM =4A(tp=20ns) VRGM= 5 V. ELECTRICAL CHARACTERISTICS Symbol Test Conditions Value Unit IGT Vp=12V) (DC) RL=330 Tj=25C MAX 25 mA VGT Vp=12V) (DC) R_=330 Tj=25C MAX 1.5 Vv VeD Vp=VDRM RL=3.3kQ Tj= 125C MIN 0.2 Vv tgt Vp=VpRM_ Iq = 200mA Tj=25C TYP 2 ys dig/dt = 1.5A/us IL Iq= 1.2 IGT Tj=25C TYP 70 mA IH IT= 100mA = gate open Tj=25C MAX 40 mA VT ITM= 50A_ tp= 380us Tj=25C MAX 1.4 Vv IDRM VDRM_ Rated Tj=25C MAX 0.01 mA IRRM VRRM_ Rated Tj= 125C 2 dv/dt Linear slope up to VD=67%VDRM Tj= 125C MIN 500 V/us gate open tq Vp=67%VDRM !TM=50A_ VpR= 25V Tj= 125C TYP 70 us ditm/dt=30 A/us dVp/dt= 50V/us 2/4 kyy SES OMsGN TYN 682 ---> TYN 692 Fig.1 : Maximum average power dissipation versus average on-state current. P (WwW) 20 360 15)- Ir oc | / a DC Q= 180 10 7 a: 120 TO: 30 | | 5 Pe Qi: 60, | | Ql- 30 ITtav) (A) 0 ! ! l l l o 2 4 6 6 10 12 14 16 18 20 Fig.3 : Average on-state current versus case temperature. I Tay) (A) 25 DG 20 16 10/ o@ = 180 \ , \ Tease(C) \ 9 25 50 75 100 125 Fig.5 : Relative variation of gate trigger current versus junction temperature. IgtI Til a Totltis26C] ~s Ih Tj=25 C) 2.5 2 Igt iN PRS 1 PAS Ih = | Pe + 0.5 t > Tj (C) 1 1 1 1 0 -40-30-20-10 0 16 20 30 40 60 60 70 80 SO 100110120130 Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact. P (W) Tease ("C) 20 7 + + @ =180 Rth=0 "C/w \ "C/W 15 4 C/W t116 NX i C/W |} 105 10 XZ SV Tamb (C) NX G 20 460 60 #86 100 120 140 Fig.4 : Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 Zth(j-c) 0.1 tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 16+2 5542 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. | rgyy (A) 300 TTT T TTT Tj initial = 25C 250 200 150 HH l~ 100 50 ee] Number of cycles 0 | | ttt iti | 1 19 100 19900 3/4 ky7_ SGS:THOMSON we sais ll Ah: TYN 682 ---> TYN 692 Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t < 10 ms, and corresponding value of |2t. Fig.8 : On-state characteristics (maximum values). It5m (A). It (A's) rH {A) 1000 1000 Tj initial = 25C Tj initial 25C ITSM 100 Tj max __ Tj max 19 Vto = 0.7V Rt -0.014 o 100 ' Vimty) o 1 2 3 4 5 PACKAGE MECHANICAL DATA TO220AB Plastic REF. DIMENSIONS Millimeters Inches A Min. | Max. Min. Max. | G A__| 10.00 | 10.40 | 0.393 | 0.409 B_ | 15.20 | 15.90 | 0.598 | 0.625 1f-624-}4 Jo C | 13.00 | 14.00 | 0.511 | 0.551 B D_ | 6.20 | 6.60 | 0.244 | 0.259 F 3.50 | 4.20 | 0.137 | 0.165 O G 2.65 | 2.95 | 0.104 | 0.116 HiAL fF H_ | 4.40 | 4.60 | 0.173 | 0.181 p 9 en l 3.75 | 3.85 | 0.147 | 0.151 J 1.23 | 1.32 | 0.048 | 0.051 M L 0.49 | 0.70 | 0.019 | 0.027 we M 2.40 | 2.72 | 0.094 | 0.107 N 4.80 | 5.40 | 0.188 | 0.212 O 1.14 | 1.70 | 0.044 | 0.066 P 0.61 | 0.88 | 0.024 | 0.034 Cooling method : C Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether- lands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4 MIGROS. BET