| TO-202AB | TO-220AB TRERMOTAB A SIEBE COMPANY 1801 HURD DRIVE IRVING, TEXAS 75038-4385 PHONE 214/580-1515 FAX 214/550-1309 SENSITIVE SCRs GENERAL DESCRIPTION The Teccor Electronics, Inc. line of sensitive SCR semicon- ductors are half-wave unidirectional gate-controlled rectifi- ers (SCR-thyristor) which complement Teccors line of power SCRs. This group of packages offers ratings of 0.8-10 amps, and 50-600 volts with gate sensitivities of 1.0-500 microamps. if gate currents in the 1-50 milliamp ranges are required, please consult Teccors non-sensitive SCR techri- cal data sheets. ELECTRICALLY ISOLATED PACKAGES This group of Teccor sensitive SCRs is available in a choice of three different product packages. The TO-220AB and TO-92 are electrically isolated where the case or tab is internally isolated to allow the use of low cost assembly and convenient packaging techniques. (0.8 - 10 Amps) GLASS PASSIVATION Teccors line of SCRs features glass-passivated junctions to ensure long term device reliability and parameter stability. Teccors glass offers a rugged, reliabie barrier against junc- tion contamination. Tape-and-reel packaging is available for the TO-92 package. Please consult factory for more information. Variations of devices covered in this data sheet are available for custom design applications. Please consult the factory for more information. Features Electrically isolated Packages @ High Voltage Capability up to 600 volts High Surge Capability - up to 100 amps Glass Chip Passivation Teccor Electronics, Inc. Sensitive SCRsElectrical Specifications Part Number lr | Vora & ler lara & Vim Vor la Isolated RRM RRM in Maximum On-state Repetitive DC Gate Peak Off-state Peak On-state DC Gate DC Holding Current Peak Trigger Current Current at Voltage Tc = Trigger Voltage Current (1) Off-state (2) (11) (17) VorM & VRRM 25C Initial On-state Forward & (19) (3) (10) Current TYPE Reverse = 20mAmps K G Voltage A Amps pAmps Volts TO-92 RMS = AV Volts Amps Te= | Te= | To= Volts Te= To=| To= | mAmps | 25C | 100C | 125C -65C 25C | 100C For Package Dimensions & MAX MIN MAX MAX MAX MAX MIN MAX Vanations, See Page 97. EC103A 08 0.51 100 200 1.0 50 17 1.2 08 .25 5.0 EC103B 0.8 0.51 200 200 1.0 50 17 12 08 25 5.0 Ec103C 0.8 0.51 300 200 1.0 50 17 1.2 08 25 5.0 EC103D 0.8 0.51 400 200 1.0 50 17 12 08 28 5.0 EC103E 0.8 0.51 500 200 1.0 50 17 1.2 08 .28 5.0 EC103M o8 0.51 600 200 2.0 100 17 12 08 25 5.0 EC103A1 o8 0.51 100 12 1.0 50 1.7 12 0.8 0.2 5.0 EC103B1 08 0.51 200 12 1.0 50 1.7 1.2 08 0.2 5.0 EC103C1 O08 0.51 300 12 1.0 50 17 1.2 08 0.2 5.0 EC103D1 08 0.51 400 12 1.0 50 1.7 1.2 0.8 0.2 5.0 EC103E1 0.8 0.54 500 12 1.0 50 17 1.2 0.8 0.2 5.0 C103M1 0.8 0.51 600 12 2.0 | 100 1.7 1.2 0.8 0.2 5.0 EC103A2 0.8 0.51 100 50 1.0 50 1.7 1.2 08 25 5.0 EC10382 08 0.51 200 50 1.0 50 17 1.2 08 25 5.0 EC103C2 08 0.51 300 50 1.0 50 17 12 08 25 5.0 C103D2 0.8 0.51 400 50 1.0 50 17 1.2 0.8 25 5.0 EC103E2 08 0.51 500 50 1.0 50 17 1.2 0.8 25 5.0 EC103M2 08 0.51 800 50 2.0 100 17 1.2 0.8 25 5.0 EC103A3 08 0.51 100 500 10 50 17 1.2 0.8 25 8.0 C103B3 o8 0.51 200 500 10 50 17 1.2 08 25 8.0 0.8 EC103C3 08 0.51 300 500 1.0 50 17 1.2 0.8 25 8.0 Am p EC103D3 08 0.51 400 500 10 50 17 1.2 0.8 25 8.0 EC103E3 08 0.51 500 500 1.0 50 17 1.2 08 25 8.0 EC103M3 08 0.51 600 500 2.0 100 17 1.2 0.8 25 8.0 EC113A _ 08 0.51 100 200 2.0 100 17 1.2 08 25 15.0 EC113B / 08 0.51 200 200 2.0 100 17 1.2 0.8 25 15.0 EC113C 08 0.51 300 200 2.0 100 17 1.2 0.8 25 15.0 EC113D 08 0.51 400 200 2.0 100 17 1.2 0.8 25 15.0 EC113E 08 0.51 500 200 2.0 100 1.7 1.2 0.8 25 15.0 EC113M 08 0.51 600 200 2.0 100 17 1.2 0.8 25 15.0 EC113A3 08 0.51 100 500 2.0 100 17 1.2 0.8 25 15.0 EC113B3 08 0.51 200 500 20 100 17 12 0.8 25 15.0 EC113C3 08 0.81 300 500 2.0 100 1.7 4.2 08 25 15.0 EC113D3 08 0.51 400 500 2.0 100 1.7 4.2 08 25 15.0 EC113E3 0.8 0.51 500 500 2.0 100 17 1.2 0.8 25 15.0 EC113M3 08 0.51 600 500 2.0 100 17 1.2 os .25 15.0 2N5060 08 051 30 200 1.0 50 17 12 08 25 5.0 2N5061 0.8 0.51 60 200 1.0 50 17 1.2 08 25 5.0 2N5062 0.8 0.51 100 200 1.0 50 17 1.2 08 25 5.0 2N5063 0.8 0.51 150 200 1.0 50 1.7 1.2 08 25 5.0 2N5064 __ 08 0.51 200 200 1.0 50 1.7 1.2 08 25 5.0 2N6564 08 0.51 300 200 1.0 100 17 1.2 08 25 5.0 2N6565 a8 0.51 400 200 1.0 100 17 1.2 08 25 5.0 TCR22-2 16 95 50 200 1.0 50 100 1.5 1.0 08 25 5.0 1.5 TCR22-3 15 95 100 200 1.0 50 100 15 1.0 08 25 5.0 Am ps TCR22-4 15 95 200 200 1.0 50 100 15 1.0 08 25 5.0 TCR22-6 1.5 95 400 200 1.0 50 100 15 1.0 0.8 25 5.0 TCR22-8 15 95 600 200 2.0 100 200 15 1.0 08 25 5.0 See General Notes and Special Numbered Notes for electrical specifications on Page 42 and 43. Teccor Electronics, Inc. 40 Sensitive SCRsSensitive SCRs | low Vorm Pom Poway) hsm dvidt di/dt tot ta t Peak Gate Peak Peak Gate Average Peak One Critical Rate- Maximum = Gate Controlled Circuit RMS Surge Current Reverse Power Gate Power Cycie Surge Of-Rise Of Rate-Of- Tum-On Time | Commutated | (Non-Repeti- (16) Gate Dissipation Dissipation Forward Forward Change Of Gate Pulse Tum-Off tive) On-State | Voltage (16) Current Off-State On-State =10mA Time Current For (6) (7):12) Voltage Current Min. Width (9) A Period Of IoT = 50mA = 15us 8.3ms For With O.1ps With Rise Time Fusing | Amps Rise Time <0.1 ps (8) Amps Vos | Watts Watts S0Hz 50Hz VoltsizSec | AmpsiiSec uSec uSec Amps2/Sec MIN MIN TYP MAX 1.0 5.0 1.0 0.1 20 16 30 50 35 50 1.6 1.0 5.0 1.0 0.1 20 16 30 50 3.5 50 1.6 1.0 5.0 1.0 0.1 20 16 3% 50 3.5 50 1.6 1.0 5.0 1.0 0.1 20 16 30 50 3.5 50 1.6 10 5.0 1.0 01 20 16 20 50 3.5 50 1.6 1.0 5.0 1.0 0.1 20 16 15 50 3.5 50 1.6 1.0 5.0 1.0 0.1 20 16 2 50 2.0 60 1.6 1.0 5.0 1.0 0.1 20 16 20 50 2.0 60 16 1.0 5.0 1.0 0.1 20 16 20 50 2.0 60 16 1.0 5.0 1.0 0.1 20 16 20 50 20 60 16 1.0 5.0 1.0 0.1 20 16 15 50 2.0 60 16 1.0 5.0 1.0 0.1 20 16 10 50 2.0 60 1.6 1.0 5.0 1.0 01 20 16 25 50 3.0 60 16 1.0 5.0 1.0 0.1 20 16 25 50 3.0 60 1.6 1.0 5.0 1.0 0.1 20 16 25 50 3.0 60 1.6 ee) 5.0 ! 1.0 0.1 20 16 25 50 3.0 60 16 1.0 5.0 1.0 0.1 20 16 20 50 3.0 60 1.6 1.0 5.0 1.0 01 20 16 10 50 3.0 60 16 1.0 5.0 1.0 01 20 16 40 50 5.0 45 1.6 1.0 5.0 1.0 0.1 20 16 40 50 5.0 46 1.6 1.0 5.0 1.0 0.1 20 16 40 50 5.0 45 16 1.0 5.0 1.0 0.1 20 16 40 50 5.0 45 16 1.0 5.0 1.0 0.1 20 16 30 50 5.0 45 16 1.0 50 1.0 01 20 16 20 50 5.0 45 1.6 1.0 5.0 1.0 0.1 20 16 30 50 40 30 1.6 1.0 5.0 1.0 01 20 16 30 50 40 30 16 ; 1.0 5.0 1.0 01 20 16 30 50 40 30 16 10 5.0 1.0 0.1 20 16 30 50 40 30 16 1.0 5.0 1.0 0.1 20 16 20 50 40 30 16 1.0 5.0 1.0 0.1 20 16 15 50 40 30 1.6 1.0 5.0 1.0 0.1 20 16 40 50 5.0 18 1.6 1.0 5.0 1.0 0.1 20 16 40 50 5.0 18 16 1.0 5.0 1.0 0.1 20 16 40 50 5.0 18 18 1.0 5.0 1.0 0.1 20 16 40 50 5.0 18 1.6 1.0 5.0 1.0 0.4 20 16 30 50 5.0 18 1.6 1.0 5.0 1.0 0.1 20 16 20 50 5.0 18 16 1.0 5.0 1.0 0.1 20 16 25 50 22 60 1.6 1.0 5.0 1.0 0.1 20 16 25 50 2.2 60 1.6 1.0 5.0 1.0 0.1 20 16 25 50 22 60 1.6 1.0 5.0 1.0 0.1 2 16 25 50 22 60 1.6 1.0 5.0 1.0 0.1 20 16 25 50 2.2 60 1.6 1.0 6.0 1.0 0.1 20 16 25 50 22 60 1.6 : 1.0 6.0 1.0 0.1 20 16 25 50 22 60 16 : 1.0 6.0 1.0 0.1 20 16 75 50 3.5 50 16 1.0 6.0 10 0.1 20 16 75 50 3.5 50 16 _1.0 6.0 1.0 0.1 20 16 iL 60 50 3.5 50 16 1.0 6.0 1.0 0.1 20 16 40 50 3.5 50 1.6 1.0 6.0 1.0 0.1 20 16 30 50 3.5 50 16 See General Notes and Special Numbered Notes for electrical specifications on Page 42 and 43. Teccor Electronics, Inc. 41 Sensitive SCRsElectrical Specifications Part Number kr Vorm & ler eu Vim Ver hy Varn tsolated Non-lsolated Maximum Repetitive DC Gate Peak Off-State Peak On- DC Gate DC Holding 5 On-State Peak Trigger Current at State Trigger Voltage Current | Current Off-State Current Vorm & VRRM Voltage (4) (11) Initial On-State (1) Forward & | (2)(11)(13) ' (20) Te = 25C (19) Current = 20mA Reverse (3) (10) (5) (15) (18) TYPE Voltage lll A Amps pAmps Volts mAmps TO-220AB | TO-202AB | 'TRMS) ITav) Volts pAmps 'c= | To=] Tc= Volts To= | To= | To= To = 25C 25C | 100C | 110C -40C | 25C | 110C Foe ee one 8 0s 8 Nariaions, MAX MAX MIN MAX MAX | MAX | MAX MAX MAX | MAX | MIN MAX S0603LS1 30 19 60 50. 40 |: 80 | 100 18 40.| 08 | 25 6.0 SQ503LS2 3.0 19 50 200 1.0 60 100 18 10 O8 26 6.0 | SO503LS3 3.0 19 50 800 1.0. | 60: | 100 16 10 | 08 | 26 8.0 S1003LS1 30 18 100 60 4.0 0. | 100 16 10 08 2 6.0 $1003LS2 30 19 100 200 40 |" 50 | 400 16 10 | 08 | .25 6.0 S1003LS3 30 12 100 800 4.0. |-.80- | 100 418 4.0 | 08 | 25 8.0 $2003.81 30. 19 200 BO 10 $0 100 18 10 08 2s 6.0 $2003..S2 30 18 200 200 1.0. 80 100 168 10 O08 26 60 3.0 S2003L.S3 3.0 19 200 800. 1.0 50 100 16 1.0 08 25 8.0. Amps | ssaosisi 30 19 400 50 4.0 | 80: | 100 16 10 | 08 | 25 60 $40031.S2 30 19 490 200 10 | 60 | 100 16 10 | 08 | 25 60 $4003.83 3.0 19 400 800 1.0 50 100 16 1.0 OB 2 8.0 S6003LS1 3.0 139 800 60 20 100 |. 200 18 1.0 o8 26 6.0 S6003LS2 3.0 13 600 200. 2.0 100 | 200 18 1.0 OB 25 6.0 $6003LS3 3.0 19 600 800 20 | 100 | 200 16 10 | 08 | 2 6.0 T106F1 40 25 50 200 2.0 100 22 10 | 08 5.0 T106A1 40 25 400 200 2.0 100 22 10 | 08 5.0 T106B1 40 25 200 200 20 100 22 10 | 08 5.0 T106C1 40 25 300 200 2.0 100 22 10 | 08 5.0 110601 40 25 400 200 2.0 100 22 10 | 08 5.0 T106E1 40 25 500 200 2.0 100 22 10 | 08 5.0 T106M1 40 25 600 200 2.0 100 22 140 | 08 5.0 4.0 [> TA07F4 4.0 25 50 500 2.0 100 25 10 | 08 60 Amps T107A1 40 25 400 500 2.0 100 25 10 | 08 6.0 110781 40 25 200 500 2.0 400 25 10 | 08 6.0 T107C1 40 25 300 500 2.0 100 25 10 | 08 6.0 710701 40 25 400 500 2.0 100 25 10 | 08 6.0 | T107E1 40 25 500 500 2.0 100 25 140 | 08 6.0 T107M1 4.0 25 600 500 2.0 100 25 10 | 08 6.0 GENERAL NOTES The case temperature (Tc) is measured as shown on dimensional outline drawings. See "Package Dimensions" section of this catalog on Page 95. All measurements (except lot) are made with an external resistor Rox = 1k2 unless otherwise noted. @ Operating temperature (Ty) is -65C to + 110C for EC Series devices; All measurements are made at 60Hz with a resistive load at an ambient temperature of +25C unless otherwise specified. -65C to +125 others. C for 2N" Series devices; and -40C to +110C for all Storage temperature range (Ts) is -65C to + 150C for TO-92 devices; -40C to +150C for TO-202 devices; and -40C to +125C for all others. Lead solder temperature is a maximum of +230C for 10 seconds maximum 2 1/16" (1.59mm) from case. Teccor Electronics, Inc. 42 Sensitive SCRsSensitive SCRs low Vorm Pom Poyay) lrsw dvidt di/dt tot ty Pt Peak Gate Peak Peak Gate Average Peak One Critical Rate- Maximum | Gate Controlled Circuit RMS Surge Current Reverse Power Gate Power Cycle Surge OfRise Of Rate-Of- Tum-On Time | Commutated | (Non-Repeti - (16) Gate Dissipation Dissipation Forward Forward Change Of Gate Pulse Tum-Off tive) On-State Voltage (16) Current Off-State On-State = 10mA Time Current For 6) (7) (12) Voltage Current Min. Width (9) A Period Of IeT = 50mA = 15s 8.3 msec for with O.iys | with Rise Time Fusing Rise Time <0.1 us Amps Velts/uSec (8) Amps Volts Watts Watts 60Hz SOHz Te = 110C AmpsiuSec Sec uSec Amps@Sec MIN TYP TYP MAX 10 60 1.0 0.1 30 25 18 50 3.0 60 37 10 6.0 1.0 0.1 30 25 20 50 40 50 37 19 6.0 1.0 01 x 25 20 50 5.0 45 37 1.0 6.0 1.0 0.1 30 25 7. 50 3.0 60 37 1.0 6.0 1.0 0.1 x 25 10 0 49 80 37 1.0 6.0 1.0 0.1 30 25 10 60 6.0 & 37 40 6.0 1.0 0.1 30 3 7 60 3.0 60 37 10 6.0 1.0 O41 3 26 10 60 40 50 37 1.0 60 10 01 30 a 10 60 5.0 46 37 1.0 60 10 01 30. 2a 4 50 3.0 60 37 1.0 6.0 _40 0.1 3 26 5 50 40 50 37 10 6.0 10 0.1 30 3 5 5 5.0 45 37 10 6.0 10 01 30 25 4 50 3.0 60 37 1.0 60 10 01 30 2 50 40 50 37 1.0 60 10 6.4 30 26 5 50 5.0 45 37 1.0 6.0 1.0 01 20 16 8 50 40 50 16 1.0 6.0 1.0 0.1 20 16 8 50 40 50 1.6 1.0 6.0 1.0 0.1 20 16 8 50 40 50 1.6 P10 6.0 1.0 0.1 20 16 8 50 4.0 50 16 1.0 6.0 1.0 0.1 20 16 8 50 40 ___ 50 16 1.0 6.0 1.0 0.1 20 16 8 50 40 50 1.6 1.0 6.0 1.0 0.1 20 16 8 50 40 50 1.6 1.0 6.0 1.0 0.1 20 16 8 50 5.0 45 16 1.0 6.0 10, 0.1 | 20. CO 16 8 50 5.0 45 1.6 1.0 6.0 1.0 0.1 20 16 8 50 5.0 45 16 1.0 6.0 1.0 0.1 20 16 8 50 5.0 45 1.6 1.0 6.0 1.0 0.1 20 16 8 50 5.0 45 1.6 1.0 6.0 4.0 0.1 20 16 8 50 5.0 45 1.6 i 1.0 6.0 1.0 0.1 20 16 8 50 5.0 45 1.6 NOTES TO ELECTRICAL SPECIFICATIONS See Figures 1 thru 5 for current ratings at specified operating case Vorm = Rated rate-of-rise reapplied forward blocking voltage temperatures. = 5V/us. Gate Bias = OV, 100Q (during turn-off time interval). 2. See Figure 6 for let vs Tc. 10. Test condition is maximum rated RMS current except TO-92 devices 3. See Figure 7 for instantaneous on-state current (ir) vs on-state are 1.2ApK; T106/T107 devices are 4Apx. voltage Vr) - (typical). 11. Vp = 6VDC, RL = 100Q. See Figure 15 for simple test circuit for 4. See Figure 8 for Vat vs Tc. measuring gate trigger voltage and gate trigger current. 5. See Figure 9 for In vs Tc. 12. See Figures 1 thru 5 for maximum allowable case temperature at 6. For more than one full cycle, see Figure 10. maximum rated current. 7. 0.8-4.0A devices also have a pulse peak forward current on-state 13. let = 500A maximum for Tc = -40C for T106 devices. rating (repetitive) of 75A. This rating applies for operation at 60Hz, 14. lH = 10mA maximum for Tc = -65C for 2N5060 Series and 2N6564 75C maximum tab (or anode) lead temperature, switching from 8CV Series devices. peak, sinusoidal current pulse width of 101s minimum, 154s maximum. 15. ly = 6MA maximum for Tc = -40C for T106 devices. See Figures 16 & 17. 16. Pulse Width < 10us. 8. See Figure 11 for tgt vs Ict. 17. Igt = 350nA maximum at Tc = -65C for 2N5060 Series and 2N6564 9. Test Conditions as Foliows: Series devices. To < 80C, rectangular current waveform; rate-of-rise of current 18. Latching current can be higher than 20mA for higher Ict types. Also <10A/us. Rate-of-reversal of current < 5A/us. ITtw = 1A (50us Pulse) latching current can be much higher at -40S. See Figure 14. Repetition Rate = 60pps. Vrrm = Rated. Vr = 15V minimum, 19. Vet = 0.2V minimum at Tc = 110C for T106 and T7107 devices. 20. Tc = Ty for test conditions in off-state. Teccor Electronics, Inc. 43 Sensitive SCRsElectrical Specifications Part Number 4 Vora & let ee Vig Ver ba VRRM Isolated Non-lsolated Maximum Repetitive Peak DC Gate Peak Peak DC Gate DC Holding On-State Off-State Trigger Off-State On-State Trigger Voltage Current Current Forward & Current Current at Voltage (4) (11) Initial (1) Reverse (2) (11) VoRM & To = 25C On-State Voltage Vi (3) (10) Current = TYPE Gey 20mA (5) (17) Amps mAmps Volts HyRMs)} tay) Tco= | To= To= | To= | To= TO-220AB TO-202AB Vols Amps 25C | 110C Volts ~40C | 25C | 10C | mAmps For Package Dimensions & Variations, MAX MAX MIN MAX MAX | MAX MAX MAX | MAX | MIN MAX see Page 95. s0s0s.s2 | sosoeFszi1 | 60 38 80 200 005 | 0.25 16 10 | 08 | 25 6.0 SO5061.S3 Soso06FS31 60 38 $0 500 O05 | 025 16 1.0 os 25 3.0 s1o0e.s2. | s1ooeFsz1 | 60 38 100 200 008 | 0.25 48 10 | o8 [ 25 6.0 6.0 siode.sa | s1o0sFss1 | 60 38 100 600 005 | 0.25 18 10 | os [ 2 8.0 : szo0e.s2 | s200ers21 | 60 38 200 200 005 | 0.28 16 10 | 08 | 26 60 AMPS | sz00eis3_|_s200erss1_|_60_|_ 38 200 600 005 | 025 46 | 10 | 08 | 25 8.0 S400e.s2. | saocers21 | 60 38 400 200 006 | 025 18 io | os | 25 60 $4006LS3 S4006FS31 6.0 38 400 606 006. | 0.25 AS 10 os 25 38.0 seooei.s2 | seocsFsz1.| 60 38 600 200 005 | 0.25 16 10 | 06 | 26 60 seode.s3. | seo0srs31 | 6.0 38 600 500 00s | 0.26 16 10 | 08 | 26 80 $0508Ls2_ | sosoaFs21 | 80 5.1 50 200 005 | 0.25 16 40 | 08 | 25 6.0 $0508Ls3_ | sososFs31 | 80 5.1 50 500 005 | 0.25 16 10 | og | 25 8.0 s100sLs2_| si00eFs21 | 8.0 5.1 100 200 005 | 0.25 16 140 | os | .25 6.0 8.0 s1008_s3__| s1008Fs31 | 8.0 54 100 500 005 | 0.25 16 10 | 08 | .25 8.0 : $2008Ls2_| s2008Fs21 | 8.0 51 200 200 005 | 0.25 16 1.0 | 08 | .25 6.0 Amps $2008.s3 | sz00sFs31 | 80 | 5.1 200 500 005 | 0.25 16 10 | 08 | 25 8.0 s400sLs2 | saoosFs2i | 8.0 54 400 200 005 | 0.25 16 to | 08 | 25 6.0 s400s.s3 | s4oceFs31 | 8.0 54 400 500 005 | 0.25 1.6 10 | 08 | .25 8.0 se00sLs2 | seo0srs21 | 8.0 54 600 200 005 | 0.25 1.6 10 | 08 | .25 6.0 s600s_s3 | seoosFs31 | 8.0 5.1 600 500 005 | 0.25 16 10 | 08 | .25 8.0 sosio.s2 | sostors2z1 | 100 | 64 50 200 005 | 0.25 16 10 | 08 | 25 60 sos0.s3 | sostorss1 | 100 | 64 ) 500 005 | 0,25 16 40 | 08 | 28 8.0 siowis2 | sioiorsz: | 100 |. 64 100 200 006 | 0.28 16 4.0 | 08 | 26 6.0 10.0 sioiss | siowrss | 100 | 64 100 600 005 | 0.28 18 40 [08 | 26 8.0 . $2010.82. | s2otors21 | 100 | 64 200 200 005 | 0.26 16 19 | 08 | 28 6.0 Amps | sonioiss | s2010rs31_| 10.0 | 64 200 500 005 | 0.25 1.6 10 [08 | 25 8.0 saoi.s2 | saotors21 | 400 | 64 400 200 006 | 0.25 16 10 | 08 | 25 6.0 saoio.ss | saotorss1 | 100 [ 64 400 600 006 | 0.25 18 40 | 08 | .26 60 seoio.s2 | seotrs2: | 100 | 64 600 200 006 | 0.26 16 10 | 08 | 26 6.0 $6010LS3 S6010FS31 10.0 64 600 500 005 | 0.25 18 10 08 25 6.0 GENERAL NOTES @ Teccor 2N5060 and 2N6564 Series devices conform to all JEDEC registered data. @ The case temperature (Tc) is measured as shown on dimensional outline drawings. See "Package Dimensions" section of this catalag on Page 95. @ All measurements (except Igt) are made with an external resisto: Rex = 1kQ unless otherwise noted. @ Allmeasurements are made at 60Hz with a resistive load at an ambient temperature of +25C unless otherwise specified. Operating temperature (T.) is -65C to +110C for EC Series devices oc to +125C for 2N Series devices; and -40C to +110C for all others. Storage temperature range (Ts) is -65C to +150C for TO-92 devices; Arc to +150C for TO-202 devices; and -40C to +125C for all others. Lead solder temperature is a maximum ot +230C for 10 seconds maximum 2 1/16" (1.59mm) from case. Teccor Electronics, Inc. Sensitive SCRsSensitive SCRs lou Vorm Pom Poay lrsm dvidt difdt tgt ty [t Peak Gate Peak Peak Gate Average Peak One Critical Rate- Maximum Gate Controlled Circuit RMS Surge Current Reverse Power Gate Power Cycle Surge OfRise Of Rate-Of- Tum-On Time Commutated | (Non-Repeti- (16) Gate Dissipation Dissipation Forward Forward Change Of | Gate Pulse = 10mA Tum-Off tive) On-State Voltage (16) Current Off-State On-State Min. Width = 15s Time Current For (6) (7) (12 Voltage Current With Rise Time (9) A Pernod Of igT = 50mA <0.1 us 8.3 mSec For With 0.1 ps 8) Fusing i Voits(Sec Rise Time Te = 110C Amps Volts Watts Watts Amps Amps/ Sec uSec uSec AmpsSec MIN TYP TYP MAX 10 6.0 1.0 01 100 8&3 20 100 40 50 #1 10 6.0 1.0 0.1 100 83 20 100 5.0 45 1 1.0 6.0 10 0.4 700 83 10 100 40 50 4 1.0 60 1.0 0.4 100 83 10 100 5.0 45 41 1.0 6.0 1.0 0.1 100 33 10 100 40 50 41 10 60 10 01 100 33 10 100 5.0 4 41 10 6.0 16 0.1 100 83 100 40 50 41 1.0 6.0 10 0.1 100 83 5 100 6.0 46 1 1.0 6.0 10 0.1 100 83 100 40 50 41 10 6.0 1.0 0.1 100 83 5 100 5.0 45 1 1.0 6.0 1.0 0.1 100 83 20 100 4.0 50 at H 1.0 6.0 | 1.0 : 0.1 100 83 __20 1000 | - 45 41 1.0 6.0 1.0 0.1 100 83 10 100 40 50 41 f 1.0 6.0 1.0 0.1 100 83 10 100 5.0 45 41 | 1.0 6.0 1.0 0.1 100 83 10 100 4.0 50 41 ! 1.0 6.0 1.0 0.1 100 83 10 100 5.0 45 41 | 4.0 6.0 1.0 0.4 100 B3 5 100 4.0 __ 50 41 a) 6.0 1.0 0.1 100 83 5 100 5.0 45 a1 1.0 6.0 1.0 0.1 100 83 5 100 40 50 41 1.0 6.0 1.0 0.1 100 83 5 100 50 4 41 1.0 6.0 1.0 0.1 100 83 20 100 40 50 41 1.0 6.0 1.0 0.1 100 83 20 100 5.0 45 41 1.0 60 10 O41 100 83 10 100 40 50 41 1.0 6.0 1.0 0.1 100 83 10 100 5.0 45 41 10 6.0 1.0 0.1 100 83 10 100 40 50 41 1.0 6.0 1.0 0.1 100 83 10 100 50 45 4 10 6.0 1.0 0.1 100 3 5 100 40 50 41 10 6.0 1.0 0.1 100 83 5 100 5.0 45 41 10 6.0 1.0 0.1 100 83 5 100 40 50 41 10 6.0 10 0.1 100 83 5 100 5.0 45 41 NOTES TO ELECTRICAL SPECIFICATIONS See Figures 1 thru 5 for current ratings at specified operating case temperatures. 2. See Figure 6 for Igt vs Tc. 3. See Figure 7 for instantaneous on-state current (it) vs on-state voltage Vr) - (typical). 4. See Figure 8 for Vet vs Tc. 5. See Figure 9 for In vs Tc. 6. For more than one full cycle, see Figure 10. 7. 0.8-4.0A devices also have a pulse peak forward current on-state rating (repetitive) of 75A. This rating applies for operation at 60Hz 75C maximum tab (or anode) lead temperature, switching from 80V peak, sinusoidal current pulse width of 10us minimum, 15s max- imum. See Figures 16 & 17. 8. See Figure 11 for tg: vs Iar. 9. Test Conditions as Follows: Tc < 80C, rectangular current waveform; rate-of-rise of current < 10A/us. Rate-of-reversal of current < 5A/us. Itm = 1A (SOus Pulse) Repetition Rate = 60pps. Vrrm = Rated. Ve = 15V minimum, Vorm = Rated rate-of-rise reapplied forward blocking voitage= 5V/us. Gate Bias = OV, 1002 (during turn-off time interval). 10. Test condition is maximum rated RMS current except TO-92 devices 11. are 1.2Apx; T106/T107 devices are 4Apx. Vo = 6VDC, Ri = 1002. See Figure 15 for simple test circuit for measuring gate trigger voltage and gate trigger current. 12. See Figures 1 thru 5 for maximum allowable case temperature at maximum rated current. 13. let = 500HA maximum for Tc = -40C for T106 devices. 14. ly = 10mA maximum for Tc = -65C for 2N5060 Series and 2N6564 Series devices. 15. ly = 6MA maximum for Tc = -40C for T106 devices. 16. Pulse Width < 10us. 17. Latching current can be higher than 20mA far higher Ict types. Also latching current can be much higher at -40C. See Figure 14. 18. Tc = Ty for test conditions in off-state. Teccor Electronics, Inc. 45 Sensitive SCRsElectrical Specifications THERMAL RESISTANCE (STEADY STATE) ELECTRICAL ISOLATION FROM LEADS TO MOUNTING TAB Rec [Reaal CAV (TYPICAL) . ce | \, TYPE : | Q i} | \ | ~ \ VAC(RMS) NN THERMOTAB ** | THERMOTAB TYPE 2 TYPE 1&3 TO-220AB TO-92 TO-220AB TO-202AB TO-2024B 4600. STANDARD _ 0.8 amp 75 [160] 2500 N/A : STANDARD 4.5 amps 50 [160] 4000 NA | OPTIONAL" 3.0.amps 6 [65] * For 4000V Isolation use V Suffix in part number 4.0 amps 10 [100] 6.2 [80] ** UL Recognized File #E71639 to sips 40 S ELECTRICAL ISOLATION 8.0 amps 3.4 3.9 Most Teccor isolated sensitive SCRs will withstand a minimum 10.0 amps 40 3.4 high potential test of 2500 VAC RMS from leads to mounting tab = over the devices operating temperature range. See tabie for other standard and optional isolation ratings. Figure 1A Maximum Allowable Case Temperature Figure 1B Maximum Allowable Case Temperature vs RMS On-State Current vs RMS On-State Current oO 130 T T T T TT] 130 T - T . CURRENT WAVEFORM: Sinusoidal CURRENT WAVEFORM: Sinusoidal 120 N\ LOAD: Resistive or Inductive Oo 120 N LOAD: Resistive or inductive | Ee \ CONDUCTION ANGLE: 180 i \ CONDUCTION ANGLE: 180 2 CASE TEMPERATURE: Measured & 110 CASE TEMPERATURE: Measured 3 110 as Shown on Dimensional Drawing . as Shown on Dimensional Drawing | 2 100 \ i | B 100 S| o e Ker "ON" SERIES Eo \ "83 ah 7706 bs 2 90 - S tor \ ; 3 80 \ | ORS Sapp eE 2 i oO 2 QQ _~ _ 8 80 \ : 2 <a ay <0 ~~ = z 2 "EC" SERIES | 3 7 & ~ ~ <= 70 i 4 =z G gE | ge 60 | % - f \ 3 s 50 ~ 50 08 40 | - o 0.5 ~ 4.0 15 20 0 5 109 15 20 28 30 35 40 RMS On-State Current [lr(Ang)l - AMPS AMS On-State Current |IT(a qs)! - Amps Figure 2A Maximum Allowable Case Temperature Figure 2B Maximum Allowable Case Temperature vs Average On-State Current vs Average On-State Current 430 _ 130 : 9 CURRENT WAVEFORM: Sinusoidal on CURRENT WAVEFORM: Sinusoidal 2 120 \ LOAD: Resistive or inductive 4 r 120 __ LOAD: Resistive or Inductive 2 \ CONDUCTION ANGLE: 180 > |CONDUCTION ANGLE: 180 110 CASE TEMPERATURE: Measured | 3 110 & ;CASE TEMPERATURE: Measured _| SB as Shown on Dimensional Drawing % as Shown on Dimensional Drawing & 100 | | S QO 2 I | = 100 4 Ee \ "Og & G 90 % [ fry | on e &, BF YRS A O> o %, > a 80 L R, 2. 3 _-| & 80 "OY | - Seay 8 a 70 se % S oO 0. H- S 70 g re < <= | \l% 60 cone E o\ : a E E 50 s 50 0.51 ~~ 8 0 02 04 06 08 1.0 12 40 on5 Te ie oe 0 05 1.0 5 2.0 25 3.0 Average On-State Current [avy - Amps Average On-State Current lit(avy) - Amps. Teccor Electronics, Inc. 46 Sensitive SCRsSensitive SCRs Figure 3A Maximum Allowable Ambient Temperature vs On-State Current 140 ees : T T T T T CURRENT WAVEFORM: Sinusoidal a LOAD: Resistive or Inductive & 120 CONDUCTION ANGLE: 180 4 FREE AIR RATING 4 & 100 oD 2 & 80 | oO E < ! o @ 60 | / 1.5 AMP & JEDEC z 2N" SERIES lav) 40 sy _.-| 5 & EC SERIES IT(ayy AY = 20 | | 0 01 #02 O38 04 05 O06 O07 O08 O89 On-State Current - Amps Figure 3C Maximum Allowable Ambient Temperature vs RMS On-State Current 140 T T T T T | ? CURRENT WAVEFORM: Sinusoidal | a LOAD: Resistive or Inductive & 120 CONDUCTION ANGLE: 180 4 g FREE AIR RATING g 8 100 & oO - - 80 2 << D S 60 _ 3 2 = 40 2 & a = 20 0 02 04 06 O08 140 12 14 16 18 2.0 RMS On-State Current (t~RMs)] - Amps Figure 4 Maximum Allowable Case Temperature vs RMS On-State Current 120 1 1 1 oO CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive ~~ 110 CONDUCTION ANGLE: 180 4 Ee TEMPERATURE: Measured as : : : 100 Shown on Dimensional Drawings 2 a _| 5 90 SS 3 NY > q a 0 80 Qo Z > > S 2 70 =} __= = E 9 5 = 3 7 m 9 E < < m x 60 5+ a4 <| a m a = a wa m 50 0 2 4 6 8 10 RMS On-State Current (t~RMs)! - Amps Figure 3B Maximum Allowable Ambient Temperature vs On-State Current 140 T T r T CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive 420 CONDUCTION ANGLE: 180 FREE AIR RATING 100 | | 1 N 3.0 AMP TO-220 80 | <TOS is _ Se 60 4 b. i by iw 40 M MY 2 ) 20 | 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 On-State Current - Amps Maximum Allowable Ambient Temperature (T,) - C Figure 3D Maximum Allowable Ambient Temperature vs RMS On-State Current 140 T T T T CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive 120 CONDUCTION ANGLE: 180 FREE AIR RATING Maximum Allowable Ambient Temperature (Tq) - C 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Average On-State Current lr AV) Amps Figure 5 Maximum Allowable Case Temperature vs Average On-State Current 110 100 SN SN T T T CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 CASE TEMPERATURE: Measured | ~ as Shown on Dimensional Drawings 90 mM Pp 80 Maximum Allowable Case Temperature (T,) - Cc 70 > > 3 Pr Pr z z > v U 5 Bi; 3 8 60 = = a m m Oo ow n m wo 50 0 1 2 3 4 5 6 7 RMS On-State Current lav! - Amps Teccor Electronics, Inc. 47 Sensitive SCRsElectrical Specifications Figure 6 Normalized DC Gate-Trigger Current vs Case Temperature Figure 7 Instantaneous On-State Current vs On-State Voltage (Typical) 9.0 32 g Te =25C 8.0 = 28 c temperature et = 7.0 2 ze 24 a 6.0 S El ou a 20 20 50 5 = S 46 5 40 S 3.0 AMP TO-220 H 12 ~ 3 30 0.8-1.5 AMP AND 2 > 8 T106/T107 G@ 20 2 2 1.0 ! Bi 4 : Cc BO 2 -65 -40 15 425 +65 4110 412! 0 6 8 1.0 12 1.4 1.6 Case Temperature (Tc) - C Instantaneous On-State Voltage (v7) - Volts Figure 8 Normalized DC Gate-Trigger Voltage Figure 9 Normalized DC Holding Current vs Case Temperature vs Case Temperature 20 4.0 1 | I I J | See General Notes for specific See General Notes for specific ' operating temperature range operating temperature range. _ ~ I 2 15 6 3.0 ! al g ! Eu xl ou ' ' O]o oO ' 7 IE 10 E 20 = = & = NY I I Ss I M\] I gs. g 10 3 ) oo I i I : 0 -65 -40 -15 +265 +65 4110 4125 65 -40 +15 +25 465 +110 +125 Case Temperature (Tc) - C Case Temperature (Tc) - C Figure 10 -- Peak Surge On-State Current vs Surge Current Duration 200 wn SUPPLY FREQUENCY: 60 Hz Sinusoidal E LOAD: Resistive < 100 10 AMP DEVICES RMS ON-STATE CURRENT: (lt(RMs)!: Max = 80 | | | | __| Rated Value at Specified Case Temperature | \ TTTTtrtTt wn - 60 . 8 AMP DEVICES > 50 ss < - J 5 40 | 6 AMP DEVICES + E P| E} 30 3 AMP TO-220 |11 hs Oo Pe ~~. mn | 2 el bp x elt | | ~~. wo ~~ T% el ~~ c ae 06 Pad a 5 10 ~~ & Top P| al g 8 . a oS 6 q = o 5 | S Aup dey All a 4 [NOTES 1) GATE CONTROL MAY BE LOST [ra CEs | : DURING AND IMMEDIATELY roel 5 3} FOLLOWING SURGE CLRRENT > Ts = INTERVAL. - 0.8 AMP DEVICES , o 2b 2) OVERLOAD MAY NOT BE REPEATED! ~ 2 UNTIL JUNCTION TEMPERATURE ae 3 HAS RETURNED TO STEADY-STATE x RATED VALUE. o 1 ee | oa 1 2 3456 810 20 30 40 5060 80100 200 300400 600 1000 Surge Current Duration - full cycles Teccor Electronics, Inc. 48 Sensitive SCRsSensitive SCRs Figure 11 Typical Turn-On Time vs Gate Trigger Current 0 ff LCE 4 =u Loony Tyo toa tlt =SOPAMAX [it = - t | : yr [ITT gp = 200 wa Maxed oT : Ss TNT : to ppt Tg = 25C NL] AQ fe L i Figure 12 Power Dissipation (Typical) vs na tap : RMS On-State Current 1 / T T T < 2 CURRENT WAVEFORM: Half Sine Wave i tH Tl = 5.0 | LOAD: Resistive or Inductive 4 Q ' CONDUCTION ANGLE: 180 = SEE 3 = at =< > PW nj Bao Li... /\ O nA Lo & Y~ Pm |! Ts & L Lf) _ foi TRS & 30 7106 & T107 DEVICES yn 2 m~ a YX = 3 hab TS & a | ot |, - | [ei 2 SIT g ven] 5 wee tbe yh i a4 : 6 1 | Soo 3 AMP TO-220 4 ao 7 ~ | @ a 0.8 AMP TO-$2 DEVICES | g 1.5 AMP DEVICES tot ae ee < | : oO 1 2 3 4 Bec ali - iL. we : De Dee 1 RMS On-State Current [y(RMs)! - Amps 0.04 O41 1 10 100 DC Gate Trigger Current (Iqq) - mA Figure 13 Power Dissipation (Typical) Figure 14 Normalized DC Latching Current vs vs RMS On-State Current Case Temperature 12 9.0 2 CURRENT WAVEFORM: Half Sine Wave = LOAD: Resistive or Inductive 8.0 49 | CONDUCTION ANGLE: 180 _ = _ 7.0 x o oe a f| io 6.0 & A !] It 3 6-10 AMP =| oO 50 G g | __70-220& TO-202 DEVICES J Ee a Ua = 40 3 4 A _ S30 2 ~~ = & c 2.0 c 2 4) a 1.0 & 8 9 . 9 t oO 2 4 6 8 10 -65 -40 15 +25 +65 +110 +125 RMS On-State Current [I7(AMg)! - Amps Case Temperature (Tc) - C NOTE: Figure 15 Simple Test Circuit For Gate Trigger V1 0- 10 volt DC meter Valtage and Current Measurement VGT 0-1 volt DC meter IG O-1mA DC milliameter R1 1K potentiometer Reset . . Normally-closed To measure gate trigger voltage and current, raise gate voltage Pushbutton : (Vet) until meter reading V1 drops from 6 volts to 1 volt. Gate alo I trigger voltage is the reading on Vert just prior to V1 dropping. Gate trigger current lot can be computed from the relationship: Vv IGT = ig- 2h Amps 1000 Or 6 VOC IN4001 where Ic is reading (in amps) on meter just prior to V1 dropping. G- Wee RI Note: IGT may turn out to be a negative quantity (trigger current flows out from gate lead). Teccor Electronics, Inc. 49 Sensitive SCRsElectrical Specifications Figure 16 Peak Repetitive Capacitor Discharge Current 180 160 |} ~ L~ - : - i ! T 140 a SS 120 -- ~ ~ 100 : - 60 t _. 1 0.8 - 4.0A DEVICES oo _ Lu i wl 20 ak. as tw=5 TIME CONSTANTS | PEAK DISCHARGE CURRENT (yy) - AMPS pi itl 1.0 3.0 5.0 7.0 10 30 50 70 100 PEAK CURRENT DURATION(ty)) - ps Figure 17 Peak Repetitive Sinusoidal Curve 180 160 140 - ~ al - ota] 120 NY ts 100 0 se / | / 80 -+ 60 . ~ \ . aN 40. [TM /- mN +. a \ a le tw > 0.8-4.0ADEVICES |\ 20 1 1 + . NN 1.0 3.0 5.9 7.0 10 30 650 70 100 PEAK CURRENT DURATION(ty)) - ps PEAK DISCHARGE CURRENT (Iy44) - AMPS Teccor Electronics, Inc. 50 Sensitive SCRs