© 2011 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C -150 V
VDGR TJ= 25°C to 175°C, RGS = 1MΩ -150 V
VGSS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C - 22 A
IDM TC= 25°C, Pulse Width Limited by TJM -100 A
IATC= 25°C - 36 A
EAS TC= 25°C 1.5 J
dv/dt IS IDM, VDD VDSS, TJ 175°C 10 V/ns
PDTC= 25°C 150 W
TJ- 55 ... +175 °C
TJM 175 °C
Tstg - 55 ... +175 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
VISOL 50/60 Hz, RMS, t = 1minute 2500 V~
FCMounting Force (ISOPLUS220) 11..65 / 25..14.6 N/lb
FCMounting Force (ISOPLUS247) 20..120 / 4.5..27 N/lb
Weight ISOPLUS220 2 g
ISOPLUS247 5 g
PolarPTM Power MOSFET
(Electrically Isolated Tab)
P-Channel Enhancement Mode
Avalanche Rated
IXTC36P15P
IXTR36P15P
VDSS = -150V
ID25 = - 22A
RDS(on)
120mΩΩ
ΩΩ
Ω
DS99792A(01/11)
Features
zSilicon Chip on Direct-Copper Bond
(DCB) Substrate
zIsolated Mounting Surface
z2500V~ Electrical Isolation
z Avalanche Rated
zExtended FBSOA
zFast Intrinsic Diode
z Low RDS(ON) and QG
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zHigh-Side Switching
zPush Pull Amplifiers
zDC Choppers
zAutomatic Test Equipment
zCurrent Regulators
zBattery Charger Applications
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250μA -150 V
VGS(th) VDS = VGS, ID = - 250μA - 3.0 - 5.0 V
IGSS VGS = ± 20V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS = 0V - 10 μA
TJ = 150°C - 250 μA
RDS(on) VGS = -10V, ID = -18A, Note 1 120 mΩ
Preliminary Technical Information
G = Gate D = Drain
S = Source
G
S
D
ISOPLUS220 (IXTC)
E153432
GDS
ISOPLUS247 (IXTR)
E153432
Isolated
Isolated
IXTC36P15P
IXTR36P15P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = -18A, Note 1 11 19 S
Ciss 2950 pF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 615 pF
Crss 115 pF
td(on) 28 ns
tr 37 ns
td(off) 45 ns
tf 14 ns
Qg(on) 55 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = -18A 21 nC
Qgd 20 nC
RthJC 1.00 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V - 36 A
ISM Repetitive, Pulse Width Limited by TJM -100 A
VSD IF = -18A, VGS = 0V, Note 1 - 3.0 V
trr 150 ns
QRM 2.0 μC
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = -18A
RG = 5Ω (External)
IF = - 25, -di/dt = -100A/μs
VR = -100V, VGS = 0V
Note 1: Pulse test, t 300μs, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
ISOPLUS220TM Outline
Ref: IXYS CO 0177 R0
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
ISOPLUS 247TM Outline