Micro International, Inc.
179-204 Belle Forrest Circle
Nashville, TN 37221
Tel: 615-662-1200 Fax 615-662-1226
Micro International, Inc
PRODUCT DATA
PART NUMBER
LDTBFR90 and LDTBFR90T
Micro-LID NPN Transistor
Micro-LID Transistors
LDTBFR90 and LDTBFR90T
Description:
The LDTBFR90 (untinned) and LDTBFR90T (tinned) are NPN silicon 5 GHz
wideband transistors in very small, rugged, surface mount, 4-post ceramic
packages (Micro International manufactured package p/n 4-075-1). The
LDTBFR90 and LDTBFR90T meet the general specifications of the BFR90
transistor. The 4-075-1 Micro-LID package is a 4-post, leadless ceramic carrier
which can be provided with gold metallized or pre-tinned lands, and is approved for
military, medical implant, sensor, and high reliability applications. The LDTBFR90
and LDTBFR90T can be provided with special feature options such as additional
temperature cycling, screening, and matching Hfe selection.
Maximum Ratings:
Parameter Symbol Rating
Collector-Base Voltage Vcbo 20 V
Collector-Emitter Voltage Vceo 15 V
Emitter-Base Voltage Vebo 2 V
Collector Current Ic 25 mA
Total Dissipation Pt 350 mW
Operating Junction Temperature Tj 150°C
Storage Temperature Tstg -65°C to 150°C
Operating Temperature Toper -55°C to 125°C
1/3 December 1997
www.microlid.com sales@microlid.com
Micro-LID Transistors
LDTBFR90 and LDTBFR90T
______________________________________________________________________________________
Outline / Schematic:
Dimensions / Marking:
Length .075′′ + .003′′ Post 1 (Emitter) .015′′ x .010′′ typ
Width .040′′ + .003′′ Post 2 (Base) .015′′ x .010′′ typ
Height .035′′ + .003′′ Post 3,4 (Collector) .015′′ x .012′′ typ
Marking on back of package : Yellow Diagonal over Emitter and Red Dot in Center
(post down configuration)
Standard In-Process Screening Requirements:
Ø Semiconductor die and Micro-LID package visual inspection
Ø Wire pull test
Ø 24 hour stabilization bake at 150°C
Ø 10 temperature cycles from –55°C to 125°C
Ø 100% electrical test of dc characteristics at 25°C
Ø Final visual inspection
________________________________________________________________
2/3 December 1997
.075
.040
4
3 2
1
.035
SUBSTRATE / CIRCUIT BOARD
1
2
3, 4
TOP VIEW
END VIEW
SIDE VIEW
www.microlid.com sales@microlid.com
Micro-LID Transistors
LDTBFR90 and LDTBFR90T
Electrical Characteristics (25°C Ambient)
Parameter Symbol Min Typ Max Units
Collector-Base Breakdown BVcbo 20 -- -- V
Ic = 10 uA, Ie = 0
Collector-Emitter Breakdown* BVceo 15 -- -- V
Ib = 0, Ic = 10 mA
Emitter-Base Breakdown BVebo 2 -- -- V
Ic = 0, Ie = 10 uA
Collector-Base Cutoff Current Icbo -- -- 50 nA
Vcb = 10 V
DC Forward Current Gain* Hfe 40 -- --
Ic = 14 mA, Vce = 10 V
Collector Capacitance Cobo -- -- 1 pF
Vcb = 10 V, Ie = 0
f = 1 MHz
Gain Bandwidth Product fT -- 5 -- GHz
Ic = 14 mA, Vce = 10 V
f = 500 MHz
Noise Figure NF -- -- 2.4 dB
Ic = 2 mA, Vce = 10 V
f = 500 MHz
* Pulse test, pulse width < 300 usec, duty cycle < 2%
3/3 December 1997
www.microlid.com sales@microlid.com
