TEMPFET BTS 132 Features N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 Pin 1 2 3 G D S Type VDS ID RDS(on) Package Ordering Code BTS 132 60 V 24 A 0.065 TO-220AB C67078-A5003-A4 2 3 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 60 V Drain-gate voltage, RGS = 20 k VDGR 60 Gate-source peak voltage, aperiodic Vgs 20 Gate-source voltage VGS 10 Continuous drain current, TC = 25 C ID 24 ISO drain current TC = 85 C, VGS = 10 V, VDS = 0.5 V ID-ISO 6.0 A Pulsed drain current, TC = 25 C ID puls 96 Short circuit current, Tj = - 55 ... + 150 C ISC 80 Short circuit dissipation, Tj = - 55 ... + 150 C PSCmax 1200 Power dissipation Ptot 75 Operating and storage temperature range Tj, Tstg - 55 ... + 150 C DIN humidity category, DIN 40 040 - E - IEC climatic category, DIN IEC 68-1 - 55/150/56 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA 1.67 75 Semiconductor Group W K/W 1 04.97 BTS 132 Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA V(BR)DSS Gate threshold voltage VGS = VDS, ID = 1 mA VGS(th) Zero gate voltage drain current VGS = 0 V, VDS = 60 V Tj = 25 C Tj = 125 C I DSS Gate-source leakage current VGS = 20 V, VDS = 0 Tj = 25 C Tj = 150 C I GSS Drain-source on-state resistance VGS = 4.5 V, ID =12 A RDS(on) V 60 - - 1.5 2.0 2.5 A - - 1 100 10 300 - - 10 100 nA A - 0.055 0.065 12 17 22 Dynamic Characteristics Forward transconductance VDS 2 x ID x RDS(on)max, ID = 12 A gfs Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Coss Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Crss Turn-on time ton, (ton = td(on) + tr) VCC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Turn-off time toff, (toff = td(off) + tf) VCC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Semiconductor Group S pF 800 1050 1400 - 500 750 - 200 300 td(on) - 25 40 tr - 150 200 td(off) - 180 250 tf - 125 160 2 ns BTS 132 Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continuous source current IS - - 24 Pulsed source current I SM - - 96 Diode forward on-voltage I F = 48 A, VGS = 0 VSD - 1.5 2.0 Reverse recovery time I F = I S, diF/dt = 100 A/s, VR = 30 V t rr - 150 - Reverse recovery charge I F = I S, diF/dt = 100 A/s, VR = 30 V Q rr A V ns C - 1.0 - - 1.3 1.4 - - 10 Temperature Sensor Forward voltage I TS(on) = 5 mA, Tj = - 55 ... + 150 C Sensor override, tp 100 s Tj = - 55 ... + 160 C VTS(on) Forward current Tj = - 55 ... + 150 C Sensor override, tp 100 s Tj = - 55 ... + 160 C ITS(on) Holding current, VTS(off) = 5 V, Tj = 25 C Tj = 150 C IH Switching temperature VTS = 5 V TTS(on) Turn-off time toff VTS = 5 V, ITS(on) = 2 mA Semiconductor Group 3 V mA - - 5 - - 600 0.05 0.05 0.1 0.2 0.5 0.3 150 - - 0.5 - 2.5 C s BTS 132 Examples for short-circuit protection at Tj = - 55 ... + 150 C, unless otherwise specified. Parameter Symbol Examples Unit 1 2 - Drain-source voltage VDS 15 30 - Gate-source voltage VGS 6.2 4.1 - Short-circuit current ISC 80 37 - A Short-circuit dissipation PSC 1200 1100 - W Response time Tj = 25 C, before short circuit tSC(off) 25 25 - Short-circuit protection ISC = f (VDS) Parameter: VGS Diagram to determine ISC for Tj = - 55 ... + 150 C Semiconductor Group ms Max. gate voltage VGS(SC) = f (VDS) Parameter: Tj = - 55 ... + 150 C 4 V BTS 132 Max. power dissipation Ptot = f (TC) Typ. drain-source on-state resistance RDS(on) = f (ID) Parameter: VGS Typical output characteristics ID = f (VDS) Parameter: tp = 80 s Safe operating area ID = f (VDS) Parameter: D = 0.01, TC = 25 C Semiconductor Group 5 BTS 132 Drain-source on-state resistance RDS(on) = f (Tj) Parameter: ID = 12 A, VGS = 4.5 V (spread) Gate threshold voltage VGS(th) = f (Tj) Parameter: VDS = VGS, ID = 1 mA Typ. transfer characteristic ID = f (VGS) Parameter: tp = 80 s, VDS = 25 V Typ. transconductance gfs = f (ID) Parameter: tp = 80 s, VDS = 25 V Semiconductor Group 6 BTS 132 Continuous drain current ID = f (TC) Parameter: VGS 4.5 V Forward characteristics of reverse diode IF = f (VSD) Parameter: Tj, tp = 80 s (spread) Typ. gate-source leakage current IGSS = f (TC) Parameter: VGS = 10 V, VDS = 0 Typ. capacitances C = f (VDS) Parameter: VGS = 0, f = 1 MHz Semiconductor Group 7 BTS 132 Transient thermal impedance ZthJC = f (tp) Parameter: D = tp/T Semiconductor Group 8 BTS 132 Package Outlines TO 220 AB Standard 4.4 3.7 1.3 15.6 9.2 17.5 1) 2) 13.5 3) 4.6 1 12.8 2.8 9.9 9.5 Ordering Code C67078-A5003-A4 0.75 2.54 1.05 2.54 0.5 2.4 GPT05155 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 Semiconductor Group 9