HMJE3055T - Hi-Sincerity Mocroelectronics Corp.

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6737-A

Issued Date : 1993.09.24

Revised Date : 1999. 08.01

Page No. : 1/3

HSMC Product Specifi cation

HMJE3055T

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HMJE3055T is designed for general purpose of amplifier and

switching applica tions.

Absolute Maximum Ratings (Ta=25 °C)

• Maximum Temperature

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature..................................................................................... 150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C).................................................................................... 75 W

Total Power Dissipation (Ta=25°C)................................................................................... 0.6 W

• Maximum Voltages and Currents (Ta=25°C)

BVCBO Collector to Base Voltage...................................................................................... 70 V

BVCEO Collector to Emitter Voltage................................................................................... 60 V

BVEBO Emitter to Base Voltage........................................................................................... 5 V

IC Collector Current ........................................................................................................... 10 A

IB Base Current.................................................................................................................... 6 A

Characteristics (Ta=25°C)

Symbol Min. Typ. Max. Unit Test Conditions

BVCEO 60 - - V IC=200mA, IB=0

BVCBO 70 - - V IC=10mA, IE=0

BVEBO 5 - - V IE=10mA, IC=0

ICBO - - 1. mA VCB=70V, IE=0

ICEX - - 1. mA VCE=70V, VEB(off)=1.5V

ICEO - - 700 uA VCE=30V, IB=0

IEBO - - 5 mA VEB=5V, IC=0

*VCE(sat)1 - - 1.1 V IC=4A, IB=400mA

*VCE(sat)2 - - 8.0 V IC=10A, IB=3.3A

*VBE(on) - - 1.8 V IC=4A, VCE=4V

*hFE1 20 - 100 IC=4A, VCE=4V

*hFE2 5 - - IC=10A, VCE=4V

fT 2 - - MHz VCE=10V, IC=500mA, f=0.5MHz

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6737-A

Issued Date : 1993.09.24

Revised Date : 1999. 08.01

Page No. : 2/3

HSMC Product Specifi cation

Characteristics Curve

Current Gain & Collector Current

100

1 10 100 1000 10000

Collector Curren t (mA)

hFE

hFE @ VCE=4V

Saturation Voltage & Collector Cur rent

100

1000

10000

1 10 100 1000 10000

Collector Curren t (mA)

Satu ration Voltage (mV)

VBE (sat) @ IC=10IB

VCE ( sat) @ IC=10IB

On Voltage & Collector Curr ent

100

1000

10000

1 10 100 1000 10000

Collector Curren t (mA)

On Voltage (mV)

VBE (on) @ VCE=4V

Sw itching Time & Collector Current

0.01

0.1

0.1 1.0 10.0

Collector Curren t (A)

Switching T im es (us)

Ton

Tstg

Capacitance & R everse-Biased Volta ge

100

1000

0.1 1 10 100

R everse- Biased Voltag e ( V)

Cap a c itance (pF)

Cob

Safe Ope rating Area

100

1000

10000

100000

1 10 100 1000

Forward Vol t age-VCE (V)

Collector Curren t-IC (mA)

PT=1 ms

PT=100 ms

PT=1 s

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6737-A

Issued Date : 1993.09.24

Revised Date : 1999. 08.01

Page No. : 3/3

HSMC Product Specifi cation

TO-220AB Dimension

*:Typical

Inches Millimeters Inches Millimeters

DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.

A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83

B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95

C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40

D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54

E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27

G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87

H-

*0.6398 - *16.25

Notes : 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.

2.Controll i ng dimens ion : millimeters.

3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

4.If there is any question with packing specification or packing m ethod, please contact your l ocal HSMC sal es office.

Material :

• Lead : 42 Alloy ; solder plating

• Mold Compound : Epoxy resin famil y, flamm abili ty solid burning class: UL94V-0

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.

• HSMC reserves the right to make changes to its produc ts without notice.

• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• HSMC assumes no liabilit y for any cons equence of customer product design, infringem ent of patents, or application assistance.

Head Office And Factory :

• Head Office (Hi-Sincerit y Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-S han N. Rd. Tai pei Taiwan R.O.C.

Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454

• Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C

Tel : 886-3-5983621~5 Fax : 886-3-5982931

• Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C

Tel : 886-3-5977061 Fax : 886-3-5979220

A B

Style : Pin 1.Base 2.Co llec tor 3. Emitter

3-Lead TO-220AB Plastic Package

HSMC Package Code : E

Marking :

HSMC Logo

Part Number

Date Code

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Rank