ES1A - ES1D
ES1A-ES1D, Rev. A
1.0 Ampere Superfast Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Electrical Characteristics TA = 25°C unless otherwise noted
1999 Fairchild Semiconductor Corporation
Parameter Device Units
1A 1B 1C 1D
Peak Repetitive Reverse Voltage 50 100 150 200 V
Maximum RMS Voltage 35 70 105 140 V
DC Reverse Voltage (Rated VR)50 100 150 200 V
Maximum Reverse Current
@ rated VRTA = 25°C
TA = 100°C5.0
100 µA
µA
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A 15 nS
Maximum Fo rward Voltage @ 1.0 A 0.92 V
Typica l Junction Capacita nce
VR = 4.0 V, f = 1.0 MHz 7.0 pF
Symbol Parameter Value Units
IOAverage Rec t i fied Current
@ TA = 120°C1.0 A
if(surge) Peak Forward Surge Current
8.3 m s singl e hal f-sine-wave
Superimposed on r ated load (J E DE C meth od) 30 A
PDTotal Device Dissipation
Derate above 25°C1.47
11.76 W
mW/°C
RθJA Therm al Res i stance, Junction to Ambient ** 85 °C/W
RθJL Therm al Res i stance, Junction to Lead** 35 °C/W
Tstg Storag e Temperatu re Range -50 to +150 °C
TJOperating Junction Temperat ure -50 to +150 °C
ES1A - ES1D
Features
• For surface mount applications.
•Glass passivated junction.
•Low profile package.
•Easy pick and place.
• Built-in strain relief.
•Superfast recovery times for
high efficiency.
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
21
0. 208 (5.28 3)
0. 188 (4.77 5)
0. 181 (4.59 7)
0. 157 (3.98 8)
0. 096 (2.43 8)
0. 078 (1.98 1)
0. 062 (1.57 5)
0. 055 (1.39 7)
0. 008 (0.20 3)
0. 004 (0.10 2) 0. 012 (0.30 5)
0. 006 (0.15 2)
0. 060 (1.52 4)
0. 030 (0.76 2)
0. 114 (2.89 6)
0. 098 (2.48 9)
Discrete POWER & Signal
Technologies
ES1A - ES1D
ES1A-ES1D, Rev. A
Typical Characteristics
Pulse
Generator
(Note 2)
50
Ω
NONINDUCTIVE 50
Ω
NONINDUCTIVE
DUT
(-)
(+)
OSCILLOSCOPE
(Note 1)
50
Ω
NONINDUCTIVE
50V
(approx)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
Reverse Recovery Time Characterstic and Test Circuit Diagram
1.0cm SET TIME BASE FOR
trr
+0.5A
0
-0.25A
-1.0A
5/ 10 ns/ cm
Non-Repeti tive Su rge Current
12 51020 50100
0
5
10
15
20
25
30
NUMB ER O F C YC LES AT 60Hz
PEAK FORWARD SURGE CUR RENT (A)
Forward Characteristics
0.4 0.6 0.8 1 1.2 1.4
0.001
0.01
0.1
1
10
FORWARD VOLTAGE (V)
FORWARD CU RRENT (A)
Pulse Width = 300µs
2% Duty Cycle
T = 25 C
º
A
Reverse Characteristi cs
0 20406080100120140
0.1
1
10
100
1000
PERCENT OF R ATED PEAK RE VER SE VOLTAG E (% )
REVERSE CURRENT ( A)
µ
T = 25 C
º
A
T = 75 C
º
A
T = 12 5 C
º
A
Forward Current Derating Curve
0 25 50 75 100 125 150 175
0
0.25
0.5
0.75
1
1.25
1.5
AMBIENT TEMPERATURE ( C)
FO RWARD CURRENT (A )
º
RESISTIVE OR
INDUCTIVE LOAD
P.C. B. MOUN TE D
ON 0. 2 x 0.2"
(5.0 x 5.0 m m)
COPPER PAD AREAS
Junction Capacitance
0.1 1 10 100
0
2
4
6
8
10
12
14
REVERSE VOLTAGE (V)
CAPACI TA NCE (pF)
TRADEMARKS
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
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This datasheet contains the design specifications for
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