SO T3 23 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 -- 12 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1.5 kV Very fast switching AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 C - - 60 V VGS gate-source voltage -20 - 20 V - - 320 mA - 1 1.6 drain current ID VGS = 10 V; Tamb = 25 C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = 10 V; ID = 320 mA; Tj = 25 C Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 SOT323 (SC-70) S 017aaa255 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BSS138BKW SC-70 plastic surface-mounted package; 3 leads SOT323 4. Marking Table 4. Marking codes Type number Marking code[1] BSS138BKW AD% [1] % = placeholder for manufacturing site code. BSS138BKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 12 August 2011 (c) NXP B.V. 2011. All rights reserved. 2 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 C - 60 V VGS gate-source voltage drain current ID total power dissipation Ptot 20 V VGS = 10 V; Tamb = 25 C - 320 mA VGS = 10 V; Tamb = 100 C [1] - 210 mA Tamb = 25 C; single pulse; tp 10 s peak drain current IDM -20 [1] Tamb = 25 C - 1.2 A [2] - 260 mW [1] - 310 mW - 830 mW Tsp = 25 C Tj junction temperature -55 150 C Tamb ambient temperature -55 150 C Tstg storage temperature -65 150 C Source-drain diode source current IS Tamb = 25 C [1] - 320 mA HBM [3] - 1500 V ESD maximum rating electrostatic discharge voltage VESD [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. 001aao121 120 Pder (%) Ider (%) 80 80 40 40 0 -75 Fig 1. 001aao122 120 -25 25 75 125 Tj (C) Normalized total power dissipation as a function of junction temperature BSS138BKW Product data sheet 0 -75 175 Fig 2. -25 25 75 125 Tj (C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 1 -- 12 August 2011 (c) NXP B.V. 2011. All rights reserved. 3 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET aaa-000173 10 ID (A) 1 (1) 10-1 (2) (3) (4) 10-2 (5) 10-3 10-1 1 10 102 VDS (V) IDM is a single pulse (1) tp = 1 ms (2) tp = 10 ms (3) tp = 100 ms (4) DC; Tsp = 25 C (5) DC; Tamb = 25 C; 1 cm2 drain mounting pad Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) Thermal characteristics Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - 415 480 K/W [2] - 350 400 K/W - - 150 K/W thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. BSS138BKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 12 August 2011 (c) NXP B.V. 2011. All rights reserved. 4 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 017aaa028 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.1 0 10 0.2 0.05 0.02 0.01 1 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa029 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 10 1 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS138BKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 12 August 2011 (c) NXP B.V. 2011. All rights reserved. 5 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 A; VGS = 0 V; Tj = 25 C 60 - - V VGSth gate-source threshold voltage ID = 250 A; VDS = VGS; Tj = 25 C 0.48 1.1 1.6 V IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 C - - 1 A VDS = 60 V; VGS = 0 V; Tj = 150 C - - 10 A IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 C - - 10 A VGS = -20 V; VDS = 0 V; Tj = 25 C - - 10 A VGS = 10 V; VDS = 0 V; Tj = 25 C - - 1 A VGS = -10 V; VDS = 0 V; Tj = 25 C - - 1 A VGS = 10 V; ID = 320 mA; Tj = 25 C - 1 1.6 VGS = 10 V; ID = 320 mA; Tj = 150 C - 2 3.2 VGS = 4.5 V; ID = 200 mA; Tj = 25 C - 1.1 2.2 VGS = 2.5 V; ID = 10 mA; Tj = 25 C - 1.4 6.5 VDS = 10 V; ID = 200 mA; Tj = 25 C - 700 - mS VDS = 30 V; ID = 300 mA; VGS = 4.5 V; Tj = 25 C - 0.6 0.7 nC - 0.1 - nC - 0.2 - nC - 42 56 pF - 7 - pF - 4 - pF - 5 10 ns RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 C VDS = 40 V; RL = 250 ; VGS = 10 V; RG(ext) = 6 ; Tj = 25 C tr rise time - 5 - ns td(off) turn-off delay time - 38 76 ns tf fall time - 20 - ns 0.47 0.8 1.2 V Source-drain diode VSD source-drain voltage BSS138BKW Product data sheet IS = 300 mA; VGS = 0 V; Tj = 25 C All information provided in this document is subject to legal disclaimers. Rev. 1 -- 12 August 2011 (c) NXP B.V. 2011. All rights reserved. 6 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET aaa-000158 0.4 10 V ID (A) 2V 2.5 V aaa-000159 10-3 ID (A) 0.3 10-4 1.75 V 0.2 (1) (2) 0.5 1.0 (3) 10-5 0.1 1.5 V 0 VGS = 1.25 V 0 1 2 3 VDS (V) 4 10-6 0 Tj = 25 C 1.5 VGS (V) 2.0 Tj = 25 C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. aaa-000160 6 RDS(on) () Sub-threshold drain current as a function of gate-source voltage aaa-000161 6 RDS(on) () (1) 4 4 (2) (3) 2 (1) 2 (4) (5) (2) (6) 0 0 0.1 0.2 0.3 ID (A) 0 0.4 0 2 Tj = 25 C ID = 300 mA (1) VGS = 1.5 V (1) Tj = 150 C (2) VGS = 1.75 V (2) Tj = 25 C 4 6 8 10 VGS (V) (3) VGS = 2.0 V (4) VGS = 2.25 V (5) VGS = 4.5 V (6) VGS = 10 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values BSS138BKW Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 -- 12 August 2011 (c) NXP B.V. 2011. All rights reserved. 7 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET aaa-000162 0.6 (1) ID (A) aaa-000163 2 a (2) 1.5 0.4 1 0.2 0.5 (2) 0 0 (1) 1.0 2.0 VGS (V) 0 -60 3.0 0 60 120 Tj = (C) 180 VDS > ID x RDSon (1) Tj = 25 C (2) Tj = 150 C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-000164 2 Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-000165 102 VGS(th) (V) (1) C (pF) 1.5 (2) (1) 1 10 (3) (2) 0.5 0 -60 (3) 0 60 120 Tj (C) 180 1 10-1 1 ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of junction temperature BSS138BKW Product data sheet 10 VDS (V) 102 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 -- 12 August 2011 (c) NXP B.V. 2011. All rights reserved. 8 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET aaa-000166 10 VGS (V) VDS 8 ID 6 VGS(pl) 4 VGS(th) VGS 2 QGS1 QGS2 QGS 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 QG (nC) QGD QG(tot) 003aaa508 ID = 0.3 A; VDS = 30 V; Tamb = 25 C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions aaa-000167 0.4 IS (A) 0.3 (1) (2) 0.2 0.1 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V (1) Tj = 150 C (2) Tj = 25 C Fig 16. Source current as a function of source-drain voltage; typical values BSS138BKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 12 August 2011 (c) NXP B.V. 2011. All rights reserved. 9 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 8. Test information P t2 duty cycle = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BSS138BKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 12 August 2011 (c) NXP B.V. 2011. All rights reserved. 10 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION REFERENCES IEC JEDEC SOT323 JEITA SC-70 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 18. Package outline SOT323 (SC-70) BSS138BKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 12 August 2011 (c) NXP B.V. 2011. All rights reserved. 11 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 10. Soldering 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3x) 3 solder paste 1.3 occupied area 0.5 (3x) 1 Dimensions in mm 0.55 (3x) sot323_fr Fig 19. Reflow soldering footprint for SOT323 (SC-70) 4.6 2.575 1.425 (3x) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2x) Dimensions in mm preferred transport direction during soldering sot323_fw Fig 20. Wave soldering footprint for SOT323 (SC-70) BSS138BKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 12 August 2011 (c) NXP B.V. 2011. All rights reserved. 12 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BSS138BKW v.1 20110812 Product data sheet - - BSS138BKW Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 12 August 2011 (c) NXP B.V. 2011. All rights reserved. 13 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 12. 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Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 -- 12 August 2011 (c) NXP B.V. 2011. All rights reserved. 14 of 16 BSS138BKW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Test information . . . . . . . . . . . . . . . . . . . . . . . . .10 Quality information . . . . . . . . . . . . . . . . . . . . . .10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Contact information. . . . . . . . . . . . . . . . . . . . . .15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 12 August 2011 Document identifier: BSS138BKW