Document Number: 83666 www.vishay.com
Revision 17-August-01
2–228
SFH610A/617A
5.3 kV TRIOS
Optocoupler
High Reliability
FEATURES
• Variety of Current Transfer Ratios at I
F
=10 mA
– SFH610A/617A-1, 40–80%
– SFH610A/617A-2, 63–125%
– SFH610A/617A-3, 100–200%
– SFH610A/617A-4, 160–320%
• Low CTR Degradation
• Good CTR Linearity Depending on Forward Current
• Withstand Test Voltage, 5300 V
RMS
• High Collector-Emitter Voltage,
V
CEO
=70 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100" (2.54 mm) Spacing
• High Common-Mode Interference Immunity
(Unconnected Base)
• Underwriters Lab File #52744
• VDE 0884 Available with Option 1
DESCRIPTION
The SFH61XA features a high current transfer ratio, low
coupling capacitance and high isolation voltage. These
couplers have a GaAs infrared emitting diode emitter,
which is optically coupled to a silicon planar phototransis-
tor detector, and is incorporated in a plastic DIP-4
package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of >8.0 mm are
achieved with option 6. This version complies with IEC 950
(DIN VDE 0805) for reinforced insulation up to an opera-
tion voltage of 400 V
RMS
or DC.
Specifications subject to change.
V
DE
Maximum Ratings
Emitter
Reverse Voltage.........................................................................6.0 V
DC Forward Current.................................................................60 mA
Surge Forward Current (t
P
≤
10
µ
s) .............................................2.5 A
Total Power Dissipation.........................................................100 mW
Detector
Collector-Emitter Voltage ............................................................70 V
Emitter-Collector Voltage ...........................................................7.0 V
Collector Current .....................................................................50 mA
Collector Current (t
P
≤
1.0 ms).................................................100 mA
Total Power Dissipation.........................................................150 mW
Package
Isolation Test Voltage between Emitter and Detector,
refer to Climate DIN 40046, part 2, Nov. 74................. 5300 V
RMS
Creepage............................................................................
≥
7.0 mm
Clearance ...........................................................................
≥
7.0 mm
Insulation Thickness between Emitter and Detector ..........
≥
0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1 .......................................
≥
175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C.........................................................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C.......................................................
≥
10
11
Ω
Storage Temperature Range ......................................–55 to +150
°
C
Ambient Temperature Range......................................–55 to +100
°
C
Junction Temperature ..............................................................100
°
C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
≥
1.5 mm)....................................260
°
C
1
2
4
3Emitter
Collector
Anode
Cathode
.255 (6.48)
.268 (6.81)
1
2
4
3
.179 (4.55)
.190 (4.83)
pin one ID
.030 (.76)
.045 (1.14)
4°
typ.
.100 (2.54)
.130 (3.30)
.150 (3.81)
.020 (.508 )
.035 (.89)
10°
3°–9°
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.031 (.79) typ.
.050 (1.27) typ.
.300 (7.62) typ.
.110 (2.79)
.130 (3.30)
.230 (5.84)
.250 (6.35)
.050 (1.27)
Dimensions in Inches (mm)
SFH617A
1
2
4
3
Emitter
Collector
Anode
Cathode
SFH610A
Document Number: 83666 www.vishay.com
Revision 17-August-01
2–229
Characteristics
(
T
A
=25
°
C)
Current Transfer Ratio
(
I
C
/
I
F
at
V
CE
=5.0 V)
and Collector-Emitter Leakage Current by Dash Number
Description Symbol Unit Condition
Emitter (IR GaAs)
Forward Voltage
V
F
1.25 (
≤
1.65) V
I
F
=60 mA
Reverse Current
I
R
0.01 (
≤
10)
µ
A
V
R
=6.0 V
Capacitance
C
0
13 pF
V
R
=0 V, f=1.0 MHz
Thermal Resistance
R
thJA
750 K/W
Detector (Si Phototransistor)
Capacitance
C
CE
5.2 pF
V
CE
=5 V, f=1.0 MHz
Thermal Resistance
R
thJA
500 K/W
Package
Collector-Emitter Saturation Voltage
V
CEsat
0.25 (
≤
0.4) V
I
F
=10 mA,
I
C
=2.5 mA
Coupling Capacitance
C
C
0.4 pF
Description -1 -2 -3 -4
I
C
/
I
F
(
I
F
=10 mA) 40–80 63–125 100–200 160–320 %
I
C
/
I
F
(
I
F
=1.0 mA) 30 (>13) 45 (>22) 70 (>34) 90 (>56)
Collector-Emitter Leakage Current,
I
CEO
V
CE
=10 V
2.0 (
≤
50) 2.0 (
≤
50) 5.0 (
≤
100) 5.0 (
≤
100) nA
I
F
=10 mA,
V
CC
=5.0 V,
T
A
=25
°
C
Load Resistance
R
L
75
Ω
Turn-on Time
t
ON
3.0
µ
s
Rise Time
t
R
2.0
Turn-off Time
t
OFF
2.3
Fall Time
t
F
2.0
Cut-off Frequency F
CO
250 kHz
Parameter Sym.
Dash No.
Unit
-1
I
F
=20 mA
-2 and -3
I
F
=10 mA
-4
I
F
=5.0 mA
Turn-on Time
t
ON
3.0 4.2 6.0
µ
s
Rise Time
t
R
2.0 3.0 4.6
Turn-off Time
t
OFF
18 23 25
Fall Time
tF11 14 15
Figure 1. Switching Times (Typical)
Linear Operation (without saturation)
Figure 2. Switching Operation
(with saturation)
RL=75 Ω
VCC=5 V
IC
47 Ω
IF
VCC=5.0 V
47 Ω
1.0 k Ω
IF
Document Number: 83666 www.vishay.com
Revision 17-August-01 2–230
Figure 3. Current Transfer Ratio (typ.)
vs. Temperature IF=10 mA, VCC=5.0 V
Figure 4. Output Characteristics (typ.)
Collector Current vs. Collector-emitter
Voltage TA=25°C
Figure 5. Diode Forward Voltage
(typ.) vs. Forward Current
Figure 9. Permissible Diode
Forward Current vs. Ambient
Temperature
Figure 6. Transistor capacitance (typ.)
vs. collector-emitter voltage TA=25°C,
f=1.0 MHz
Figure 7. Permissible Pulse Handling
Capability. Forward Current vs. Pulse
Width Pulse cycle D=parameter, TA=25°C
Figure 8. Permissible Power
Dissipation vs. Ambient Temperature
20
15
10
0
5
pF
C
10-2 10-1 10-0 101102
V
Ve
CCE