BDV65B - ON Semiconductor

May, 2012 − Rev. 14

1Publication Order Number:

BDV65B/D

BDV65B(NPN),

BDV64B(PNP)

Complementary Silicon

Plastic Power Darlingtons

. . . for use as output devices in complementary general purpose

amplifier applications.

Features

•High DC Current Gain − HFE = 1000 (min) @ 5 Adc

•Monolithic Construction with Built−in Base Emitter Shunt Resistors

•These are Pb−Free Devices*

MAXIMUM RATINGS

Rating Symbol Max Unit

Collector−Emitter Voltage VCEO 100 Vdc

Collector−Base Voltage VCB 100 Vdc

Emitter−Base Voltage VEB 5.0 Vdc

Collector Current − Continuous

− Peak

IC10

20

Adc

Base Current IB0.5 Adc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

PD125

1.0

W

W/°C

Operating and Storage Junction Temperature

Range

TJ, Tstg -65 to

+150

°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 1.0 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SOT−93

(TO−218)

CASE 340D

10 AMPERE DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

60−80−100−120 VOLTS,

125 WATTS

http://onsemi.com

COLLECTOR 2,4

BASE

1

EMITTER 3

COLLECTOR 2

BASE

1

EMITTER 3

NPN PNP

BDV65B BDV64B

3

2

1

TO−247

CASE 340L

STYLE 3

NOTE: Effective June 2012 this device will

be available only in the TO−247

package. Reference FPCN# 16827.

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

BDV65B (NPN), BDV64B (PNP)

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2

MARKING DIAGRAMS

BDV6xB

AYWWG

1 BASE

2 COLLECTOR

3 EMITTER

AYWWG

BDV6xB

BDV6xB = Device Code

x = 4 or 5

A = Assembly Location

Y = Year

WW = Work Week

G=Pb−Free Package

1 BASE

2 COLLECTOR

3 EMITTER

TO−247 TO−218

ORDERING INFORMATION

Device Order Number Package Type Shipping

BDV65BG TO−218

(Pb−Free)

30 Units / Rail

BDV64BG TO−218

(Pb−Free)

30 Units / Rail

BDV65BG TO−247

(Pb−Free)

30 Units / Rail

BDV64BG TO−247

(Pb−Free)

30 Units / Rail

1.0

0.8

00 25 50 100 125 150

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

DERATING FACTOR

75

0.4

0.6

0.2

BDV65B (NPN), BDV64B (PNP)

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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

100

ÎÎÎÎ

−

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 50 Vdc, IB = 0)

ÎÎÎÎÎ

ICEO

ÎÎÎ

−

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

ÎÎÎÎÎ

ICBO

ÎÎÎ

−

ÎÎÎÎ

0.4

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 50 Vdc, IE = 0, TC = 150°C)

ÎÎÎÎÎ

ICBO

ÎÎÎ

−

ÎÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎ

−

ÎÎÎÎ

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 5.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎ

hFE

ÎÎÎ

1000

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 5.0 Adc, IB = 0.02 Adc)

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

−

ÎÎÎÎ

2.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter Saturation Voltage

(IC = 5.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎ

VBE(on)

ÎÎÎ

−

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

BDV65B (NPN), BDV64B (PNP)

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4

10K

Figure 2. DC Current Gain

IC, COLLECTOR CURRENT (A)

0.1 1

1K

hFE, DC CURRENT GAIN

410

NPN PNP

VCE = 4 V

IC, COLLECTOR CURRENT (A)

0.1 1

hFE, DC CURRENT GAIN

10

Figure 3. DC Current Gain

10K

1K

1

10

0.1

IC, COLLECTOR CURRENT (A)

10

0.1

VBE(sat) @ IC/IB = 250

V, VOLTAGE (V)

Figure 4. “On” Voltages

1

10

IC, COLLECTOR CURRENT (A)

0.1

V, VOLTAGE (V)

1

Figure 5. “On” Voltages

0.1 101

VBE(sat) @ IC/IB = 250

Figure 6. Active Region Safe Operating Area

100

1

VCE, COLLECTOR-EMITTER VOLTAGE (V)

50

20

5

10 50 100

SECONDARY BREAKDOWN

LIMITED @ TJ v 150°C

THERMAL LIMIT @ TC = 25°C

BONDING WIRE LIMIT

IC, COLLECTOR CURRENT (A)

BDV65B, BDV64B

dc

5.0 ms 1.0 ms

100 μs

10

1

30

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 6 is based on TJ(pk) = 150°C, TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150°C. TJ(pk) may be calculated from the data in

Figure 7. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

BDV65B (NPN), BDV64B (PNP)

http://onsemi.com

5

Figure 7. Thermal Response

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.03

0.01 0.05 0.1 0.5 1.0 5 10 50 100 100

0

ZθJC(t) = r(t) RθJC

RθJC = 1.0°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) ZθJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

(SINGLE PULSE)

0.2

0.05

0.1

0.02

0.01

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

500

BDV65B (NPN), BDV64B (PNP)

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6

PACKAGE DIMENSIONS

SOT−93 (TO−218)

CASE 340D−02

ISSUE E

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

A

D

V

G

K

SL

U

BQ

123

4

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

E

C

J

H

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A--- 20.35 --- 0.801

B14.70 15.20 0.579 0.598

C4.70 4.90 0.185 0.193

D1.10 1.30 0.043 0.051

E1.17 1.37 0.046 0.054

G5.40 5.55 0.213 0.219

H2.00 3.00 0.079 0.118

J0.50 0.78 0.020 0.031

K31.00 REF 1.220 REF

L--- 16.20 --- 0.638

Q4.00 4.10 0.158 0.161

S17.80 18.20 0.701 0.717

U4.00 REF 0.157 REF

V1.75 REF 0.069

TO−247

CASE 340L−02

ISSUE F

N

P

A

K

W

F

D

G

U

E

0.25 (0.010) MYQS

J

H

C

4

123

−T−

−B−

−Y−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

2 PL

3 PL

0.63 (0.025) MTBM

−Q−

LDIM MIN MAX MIN MAX

INCHESMILLIMETERS

A20.32 21.08 0.800 8.30

B15.75 16.26 0.620 0.640

C4.70 5.30 0.185 0.209

D1.00 1.40 0.040 0.055

E1.90 2.60 0.075 0.102

F1.65 2.13 0.065 0.084

G5.45 BSC 0.215 BSC

H1.50 2.49 0.059 0.098

J0.40 0.80 0.016 0.031

K19.81 20.83 0.780 0.820

L5.40 6.20 0.212 0.244

N4.32 5.49 0.170 0.216

P--- 4.50 --- 0.177

Q3.55 3.65 0.140 0.144

U6.15 BSC 0.242 BSC

W2.87 3.12 0.113 0.123

STYLE 3:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

BDV65B (NPN), BDV64B (PNP)

http://onsemi.com

7

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BDV65B/D

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