SM05T1GSeries ESD Protection Diode Array Dual Common Anode These dual monolithic silicon surge protection diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. www.onsemi.com Specification Features: SOT-23 CASE 318 STYLE 12 * SOT-23 Package Allows Either Two Separate Unidirectional * * * * * * Configurations or a Single Bidirectional Configuration Working Peak Reverse Voltage Range - 5.0 V to 36 V Peak Power - 300 Watt (8/20 ms) Low Leakage - 1.0 mA Flammability Rating UL 94 V-0 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These are Pb-Free Devices Mechanical Characteristics: CASE: Void-Free, Transfer-Molded, Thermosetting Plastic Case FINISH: Corrosion Resistant Finish, Easily Solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260C for 10 Seconds Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications Available in 8 mm Tape and Reel Use the Device Number to Order the 7 Inch/3,000 Unit Reel Replace the "T1" with "T3" in the Device Number to Order the 13 Inch/10,000 Unit Reel 1 3 2 PIN 1. CATHODE 2. CATHODE 3. ANODE MARKING DIAGRAM xxM MG G 1 xxM = Device Code xx = 05, 12, 15, 24, 36 M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping SM05T1G SOT-23 (Pb-Free) 3,000/Tape & Reel SZSM05T1G SOT-23 (Pb-Free) 3,000/Tape & Reel SM12T1G SOT-23 (Pb-Free) 3,000/Tape & Reel SM15T1G SOT-23 (Pb-Free) 3,000/Tape & Reel SM24T1G SOT-23 (Pb-Free) 3,000/Tape & Reel SM36T1G SOT-23 (Pb-Free) 3,000/Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2003 August, 2018 - Rev. 9 1 Publication Order Number: SM05T1/D SM05T1G Series MAXIMUM RATINGS Rating Peak Power Dissipation @ 20 ms (Note 1) @ TL 25C Symbol Value Ppk 300 IEC 61000-4-2 (ESD) Air Contact 15 26 IEC 61000-4-4 (EFT) 40 IEC 61000-4-5 (Lightning) A mW mW/C C/W RqJA 300 2.4 417 mW mW/C C/W TJ, Tstg - 55 to +150 C TL 260 C PD Junction and Storage Temperature Range Lead Solder Temperature - Maximum (10 Second Duration) A 12 RqJA Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient W kV 225 1.8 556 PD Total Power Dissipation on FR-5 Board (Note 2) @ TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Unit Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non-repetitive current pulse per Figure 3 2. FR-5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina NOTE: Other voltages may be available upon request ELECTRICAL CHARACTERISTICS UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT QVBR I IF Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT VC VBR VRWM Test Current Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK V IR VF IT IPP Uni-Directional ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) VBR, Breakdown Voltage VRWM IT (Volts) IR @ VRWM VC @ IPP = 1 Amp Max IPP (Note 4) Typical Capacitance (pF) Device* Device Marking (Volts) (mA) Min Max mA (Volts) (Amps) Pin 1 to 3 @ 0 Volts SM05T1G 05M 5 10 6.2 7.3 1.0 9.8 17 225 SM12T1G 12M 12 1.0 13.3 15.75 1.0 19 12 95 SM15T1G 15M 15 1.0 16.7 19.6 1.0 24 10 100 SM24T1G 24M 24 1.0 26.7 31.35 1.0 43 5.0 60 SM36T1G 36M 36 1.0 40.0 46.95 1.0 60 4.0 45 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. 8/20 ms pulse waveform per Figure 3 *Include SZ-prefix devices where applicable. www.onsemi.com 2 SM05T1G Series TYPICAL CHARACTERISTICS 300 PD, POWER DISSIPATION (mW) PPP, PEAK PULSE POWER (kW) 10 1 0.1 0.01 250 ALUMINA SUBSTRATE 200 150 100 FR-5 BOARD 50 0 0.1 1 100 10 tp, PULSE DURATION (ms) 1000 0 Figure 1. Non-Repetitive Peak Pulse Power versus Pulse Time C, CAPACITANCE (pF) 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 75 100 125 TEMPERATURE (C) 150 175 250 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 50 Figure 2. Steady State Power Derating Curve PEAK VALUE IRSM @ 8 ms tr 90 tP 20 210 170 130 10 0 90 0 20 40 60 0 80 1 t, TIME (ms) Figure 3. 8/20 ms Pulse Waveform 2 3 BIAS VOLTAGE (VOLTS) 90 80 70 60 50 40 30 20 10 0 0 4 Figure 4. Typical Diode Capacitance (SM05) 100 C, CAPACITANCE (pF) % OF PEAK PULSE CURRENT 100 25 1 5 8 BIAS VOLTAGE (VOLTS) 12 Figure 5. Typical Diode Capacitance (SM12) www.onsemi.com 3 5 SM05T1G Series TYPICAL COMMON ANODE APPLICATIONS A quad junction common anode design in a SOT-23 package protects four separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. Two simplified examples of surge protection applications are illustrated below. Computer Interface Protection A KEYBOARD TERMINAL PRINTER ETC. B C I/O D FUNCTIONAL DECODER GND SM05T1G Series Microprocessor Protection VDD VGG ADDRESS BUS RAM ROM DATA BUS CPU I/O SM05T1 Series CLOCK CONTROL BUS GND SM05T1G Series www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0 INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 --- MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10 GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb-Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE-ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE-ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT-23 (TO-236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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