PIN DIODE Features * Useful attenuation from 1 vA to 100 mA bias. * Capacitance below 0.4 pF. * Low distortion in switches and attenuators. * Rugged Microsemi construction. Description The 1N5767 and 1N5957 PIN diodes are based upon low capacitance PIN chips designed with fong minority carrier lifetime, and thick intrinsic width. Thus operation as low as 1 MHz is possible with low distortion. Additionally, the low diode capacitance allows useful operation well into the micro- wave frequency range. The 1N5767 (5082-3080) is a general pur- pose low power PIN diode designed for both MAXIMUM RATINGS 1N5767 (5082 - 3080)SERIES 1N5957 SERIES switch and attenuator applications. The 1N5957 is primarily used as an attenu- ator PIN diode and is particularly suitable wherever current controlled, wide dynamic range resistance elements are required. The 1N5957 has also been characterized for the 75Q attenuator, commonly employed in CATV systems. Reverse Voltage (V,) Volts (I, = 10 YA) 100V Average Power Dissipation: (25 C) Free Air (P,) 400 mW (Derate linearly to 175 T) Operating and Storage Temperature Range - 65C to +175C 6-10 Watertown Tho diode experts MO Corp. Electrical Specifications (25C) 1N5767 (5082-3080) 1N5957 TEL. (617) 926-0404 + FAX (617) 924-1235 Test Symbol 1N5767 1N5957 Conditions (5082- 3080) Total Capacitance (Max) C; 0.4 pF 0.4 pF SOV, 1 MHz Series Resistance Rs 10002(min) 15002(min) 2000Qityp) 30002\(typ) 10 vA, 100 MHz Series Resistance Rs BQimax) 8BQ(max) 4Qityp) 6Qityp) 20 mA, 100 MHz Series Resistance Rs 2.5Q(max) 3.5Q(max) 1.5Qityp) 2.02X{typ) 100 mA, 100 MHz Carrier Lifetime (Min) T 1.0 uS 1.5(min) 2ityp) |. = 10mA Reverse Current (Max) Ip 10 pA 10 vA V, = Rating Current for Rs = 752 ls, 0.7 mA 0.8 mA- (typ) fm 1.2mA R. = 752 Return Loss (typ} _ 30 dB 30 dB Diode terminates 752 line Second Order Distortion (typ) _ 40 dB -50 dB Bridged tee attenuator atten. = 10 dB Third Order Distortion (typ) - -60dB - 65 dB P,, = 50 dBmV f, = 10 MHz, f, = 13 MHz RESISTANCE FORWARD VOLTAGE VS FORWARD CURRENT VS FORWARD CURRENT (TYPICAL) (TYPICAL) 100 1N5767 z 10.0 s 8 = o < s & 5 10 \ rd . 5 oO fe g 010 t 0.001 0.01 0.10 4.0 10.0 100.0 2 Diode Current (mA) 0.01 0 2 4 & 4 1.0 FORWARD VOLTAGE (VOLTS) 580 PLEASANT STREET WATERTOWN, MA 02172 6-11 PRINTED IN U.S.A. 1N5767 (5082-3080) 1N5957 TOTAL CAPACITANCE VS REVERSE VOLTAGE C1 Total Capacitance (pF) 1 2 5 10 20 50 100 200 500 = 1000 Ve Reverse Voltage (V) PARALLEL RESISTANCE VS REVERSE VOLTAGE 100 zg 8 50 s % wD a w 2 a & 20 ao I Pal 10 1 2 5 10 20 50 100 200 500 1000 Va Reverse Voltage (} MECHANICAL SPECIFICATIONS wie BAND i a % 021 (530) ore f } oo je 014 (956) pDIA~ | 975 | | MAX. 975 DIA. MAX. MIN. (4.3) MIN. (1.93) (24.7) (24.7) Dimensions: Inches (Millimeters) 580 PLEASANT STREET - WATERTOWN, MA 02172 TEL. (617) 926-0404 FAX (617) 924-1235 6-12 PRINTED IN U.S.A.