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Darlington Transistor
TO-3
Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Minimum Maximum Unit
Off Characteristics
Collector-Emitter Sustaining Voltage (1)
(lC= 100mA, lB = 0) MJ11016 VEO (sus) 120 - V
Collector Cutoff Current (VCE = 50 V, IB = 0 ) ICEO - 1
mA
Collector-Emitter Leakage Current
(VCE = 120V, RBE = 1kΩ) MJ11016
(VCE = 120V, RBE = 1kΩ, TC = 125°C) MJ11016
ICER -1
5
Emitter Cutoff Current (VEB = 5V, IC = 0 ) IEBO - 5
On Characteristrics (1)
DC Current Gain
(lC = 20A,VCE = 5V)
(lC = 30A,VCE = 5V)
hFE
1,000
200 - -
Collector-Emitter Saturation Voltage
(lC = 20A, IB = 200mA)
(lC = 30A, lB = 300mA)
VCE (sat) -3
4
V
Base-Emitter Saturation Voltage
(lC = 20A, IB = 200mA)
(lC = 30A, IB = 300mA)
VBE (sat) -3.5
5
Dynamic Characteristics
Small-Signal Current Gain
(lC = 10A, VCE = 3V, f =1MHz) |hfe| 4 - -
(1) Pulse Test : Pulse Width = 300μs, Duty Cycle 2%.
(2) fT = |hfe|• ftest.
Internal Schematic Diagram
NPN
MJ11016