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Darlington Transistor
TO-3
Description
Designed for use as output devices in complementary general purpose
amplier applications.
Maximum Ratings
Characteristic Symbol MJ11016 Unit
Collector-Emitter Voltage VCEO 120
CoIIector-Base Voltage VCBO 120 V
Emitter-Base Voltage VEBO 5
Collector Current -Continuous
-Peak
IC
ICM
30
50 A
Base Current IB1
Total Power Dissipation @TC= 25°C
Derate above 25°C PD
200
1.15
W
W/°C
Operating and Storage Junction Temperature Range TJ, TSTG -65 to +200 °C
Thermal Characteristics
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 0.87 °C/W
Features:
High gain darlington performance
High DC current gain hFE = 1,000 (Minimum) at Ic = 20A
Monolithic construction with built-in base-emitter shunt resistor
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Darlington Transistor
TO-3
Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Minimum Maximum Unit
Off Characteristics
Collector-Emitter Sustaining Voltage (1)
(lC= 100mA, lB = 0) MJ11016 VEO (sus) 120 - V
Collector Cutoff Current (VCE = 50 V, IB = 0 ) ICEO - 1
mA
Collector-Emitter Leakage Current
(VCE = 120V, RBE = 1kΩ) MJ11016
(VCE = 120V, RBE = 1kΩ, TC = 125°C) MJ11016
ICER -1
5
Emitter Cutoff Current (VEB = 5V, IC = 0 ) IEBO - 5
On Characteristrics (1)
DC Current Gain
(lC = 20A,VCE = 5V)
(lC = 30A,VCE = 5V)
hFE
1,000
200 - -
Collector-Emitter Saturation Voltage
(lC = 20A, IB = 200mA)
(lC = 30A, lB = 300mA)
VCE (sat) -3
4
V
Base-Emitter Saturation Voltage
(lC = 20A, IB = 200mA)
(lC = 30A, IB = 300mA)
VBE (sat) -3.5
5
Dynamic Characteristics
Small-Signal Current Gain
(lC = 10A, VCE = 3V, f =1MHz) |hfe| 4 - -
(1) Pulse Test : Pulse Width = 300μs, Duty Cycle 2%.
(2) fT = |hfe|• ftest.
Internal Schematic Diagram
NPN
MJ11016
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Darlington Transistor
TO-3
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Darlington Transistor
TO-3
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Page <5> V1.113/08/14
Darlington Transistor
TO-3
There are two limitation on the power handling ability of a transistor: average junction temperature and second breakdown
safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation i.e., the
transistor must not be subjected to greater dissipation than curves indicate.
The data of SOA curve is base on TJ(PK) = 200°C; TC is variable depending on conditions. Second breakdown pulse limits are
valid for duty cycles to 10% provided TJ(PK) ≤ 200°C. At high case temperatures, thermal limitation will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
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Darlington Transistor
TO-3
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Part Number Table
Description Part Number
Darlington Transistor, TO-3 MJ11016
TO-3
Pin 1. Base
2. Emitter
3. Collector (Case)
Dimensions Minimum Maximum
A38.75 39.96
B19.28 22.23
C7.96 9.28
D11.18 12.19
E25.2 26.67
F0.92 1.09
G1.38 1.62
H29.9 30.4
I16.64 17.3
J3.88 4.36
K10.67 11.18