STPS5H100B/-1
®
July 1999 - Ed: 4B
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Schottky b arrie r recti fi er desig ned for hig h fre-
quency miniature Switched Mode Power Sup-
plies such as adaptators and on board DC to
DC converters.
DESCRIPTION
DPAK
STPS5H100B
A
NC
K
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 100 V
IF(RMS) RMS f orward c urrent 10 A
IF(AV) Av erage forward current Tc = 165° C δ = 0.5 5 A
IFSM S urge non repetitive forward current tp = 10 ms sinusoidal 75 A
IRRM R epetitive peak reverse current tp = 2 µs square F = 1kHz 1 A
IRSM N on repetitive peak reverse current tp = 100 µs square 2 A
Tstg Storage temperature range - 65 to + 175 °C
Tj Maximum operating junction temperature * 175 ° C
dV/dt Critical rate of r ise of reverse voltage 10000 V/µs
ABSOLUTE RATINGS (limiting values)
IF(AV) 5 A
VRRM 100 V
Tj (max) 175 ° C
VF (max) 0.61 V
MAIN PRODUCT CHARACTERISTIC S
NEGLIGIBLE SWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LE AKAGE CURRE NT
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FO RWARD VOLTA GE DROP
AVALA NCHE RATE D
FEATUR ES AND BENEFITS
IPAK
STPS5H100B-1
A
NC
K
K
* :
dPtot
dTj
< 1
Rth
(
j
−
a
) thermal runaway c ondition for a diode on its own heatsink
1/5
Symbol Parameter Value Unit
Rth (j-c) Junction to case 2.5 °C/W
THERMA L RESISTANCES
Symbol Paramet er Tests Conditions Min. Typ. Max. Unit
IR * Reverse leakage current Tj = 25°CV
R
= VRRM 3.5 µA
Tj = 125°C1.34.5mA
V
F
** Forward voltage drop Tj = 25°CI
F
= 5 A 0.73 V
Tj = 125°CI
F
= 5 A 0.57 0.61
Tj = 25°CI
F
= 10 A 0.85
Tj = 125°CI
F
= 10 A 0.66 0.71
STAT IC ELECTRICAL CHARACTE RISTICS
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the maximum conductio n losses use the fol lowing equa tion :
P = 0.51 x IF(AV) + 0.02 x IF2(RMS)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IF(av) (A)
PF(av)(W)
δ= 1
δ= 0.5
δ= 0.2
δ= 0.1
δ= 0.05
T
δ
=tp/T tp
Fig. 1 : A verage forward power diss ipation versus
average forward current.
0 20 40 60 80 100 120 140 160 180
0
1
2
3
4
5
6
Tamb(°C)
IF(av)(A)
Rth(j-a)=80°C/W
Rth(j-a)=Rth(j-c)
T
δ
=tp/T tp
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
STPS5H100B/-1
2/5
1E-3 1E-2 1E-1 1E+0
0
10
20
30
40
50
60
70
80
90
100
110
120
t(s)
IM(A)
Tc=75°C
Tc=50°C
Tc=125°C
I
M
t
δ
=0.5
Fig. 3 : Non repetitive surge peak forward current
versus overload duration (maximum values).
0 102030405060708090100
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
5E+3
VR(V)
IR(µA)
Tj=125°C
Tj=25°C
Fig. 5: Reverse leakage current versus reverse
voltage applied.
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.1
1.0
10.0
50.0
VFM(V)
IFM(A)
Tj=25°C
Tj=125°C
Fig. 7 : Forward voltage drop versus forward cur-
rent (maximum values).
1E-3 1E-2 1E-1 1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
Single pulse
δ= 0.5
δ= 0.2
δ= 0.1
T
δ
=tp/T tp
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse dur ation.
1 10 100
10
100
1000
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig. 6: Junction capacitance versus reverse
voltage applied (typical val ues).
0 2 4 6 8 10 12 14 16 18 20
0
10
20
30
40
50
60
70
80
90
100
S(Cu) (cm²)
Rth(j-a) (°C/W)
Fig. 8: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35µm)
(DPAK).
STPS5H100B/-1
3/5
PACKAGE M EC HANI CAL DATA
DPAK
REF. DIMENSIONS
Millimeters Inches
Min. Max Min. Max.
A 2.20 2.40 0.086 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.212
C 0.45 0.60 0.017 0.023
C2 0.48 0.60 0.018 0.023
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.251 0.259
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.397
L2 0. 80 ty p. 0.031 typ.
L4 0.60 1.00 0.023 0.039
V2 0° 8° 0° 8°
6.7
6.7
3
3
1.61.6
2.32.3
FOOT PRINT (in millimeters)
STPS5H100B/-1
4/5
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for t h e c o n sequ ence s of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implic ation or othe rwise un der any pat ent or patent r ights of STM icroe lectronics . Speci fications mentioned in this pub lication are s ubjec t to
change without notice. This publication supersedes and replaces all information previously suppli ed.
STMicr oel ect roni cs products ar e not authorized for use as c ri tical components in lif e support devic es or system s without expr es s writ ten ap-
proval of STMicroelectronics. The ST logo is a registe red trademark o f STMicroelectron ics
© 1999 STMicroelectroni cs - Printed i n Italy - All rights rese rved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
PACKAGE M E CHANI CAL DATA
IPAK
Ordering t ype Marking Package Weight Base q ty D elivery m ode
STPS5H100B S5H100 DPAK 0.30g 75 Tube
STPS 5H100B-TR S5H100 DPAK 0.30g 2500 Tape & reel
STPS5H100B-1 S5H100 IPAK 0.35g 75 Tube
Epoxy m eets UL94,V0
HLL1
G
B5
B
V1
D
C
A1
A3
A
C2
B3
B6
L2
E
B2
REF. DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.035
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
V1 10° 10°
STPS5H100B/-1
5/5
