NGB8245NT4G - ON Semiconductor

June, 2012 − Rev. 1

1Publication Order Number:

NGB8245N/D

NGB8245N

Ignition IGBT

20 A, 450 V, N−Channel D2PAK

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

monolithic circuitry integrating ESD and Overvoltage clamped

protection for use in inductive coil drivers applications. Primary uses

include Ignition, Direct Fuel Injection, or wherever high voltage and

high current switching is required.

Features

•Ideal for Coil−on−Plug and Driver−on−Coil Applications

•D2PAK Package Offers Smaller Footprint for Increased Board Space

•Gate−Emitter ESD Protection

•Temperature Compensated Gate−Collector Voltage Clamp Limits

Stress Applied to Load

•Integrated ESD Diode Protection

•Low Threshold Voltage for Interfacing Power Loads to Logic or

Microprocessor Devices

•Low Saturation Voltage

•High Pulsed Current Capability

•This is a Pb−Free Device

Applications

•Ignition Systems

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector−Emitter Voltage VCES 490 V

Collector−Gate Voltage VCER 490 V

Gate−Emitter Voltage VGE "15 V

Collector Current−Continuous

@ TC = 25°C − Pulsed

IC20

ADC

AAC

Continuous Gate Current IG1.0 mA

Transient Gate Current

(t ≤ 2 ms, f ≤ 100 Hz)

IG20 mA

ESD (Charged−Device Model) ESD 2.0 kV

ESD (Human Body Model)

R = 1500 W, C = 100 pF

ESD

8.0 kV

ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V

Total Power Dissipation @ TC = 25°C

Derate above 25°C

PD150

1.0

W/°C

Operating & Storage Temperature Range TJ, Tstg −55 to +175 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

20 A, 450 V

VCE(on) = 1.3 V @

IC = 10 A, VGE . 4.5 V

GRG

Device Package Shipping†

ORDERING INFORMATION

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

http://onsemi.com

RGE

NGB8245NT4G D2PAK

(Pb−Free)

800 / Tape & Reel

D2PAK

CASE 418B

STYLE 4

MARKING DIAGRAM

NGB

8245NG

AYWW

Gate

Emitter

4 Collector

Collector

NGB8245N= Device Code

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

NGB8245N

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UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)

Characteristic Symbol Value Unit

Single Pulse Collector−to−Emitter Avalanche Energy

VCC = 50 V, VGE = 5.0 V, Pk IL = 9.5 A, RG = 1 kW, L = 3.5 mH, Starting TC = 150°C

EAS 158

THERMAL CHARACTERISTICS

Thermal Resistance, Junction−to−Case RqJC 1.0 °C/W

Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 62.5 °C/W

Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2) TL275 °C

1. When surface mounted to an FR4 board using the minimum recommended pad size.

2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Test Conditions Temperature Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Clamp Voltage BVCES IC = 2.0 mA TJ = −40°C to 175°C 430 450 470 V

IC = 10 mA TJ = −40°C to 175°C 450 475 490

IC = 12 A, L = 3.5 mH, RG

= 1 kW

TJ = −40°C to 175°C 420 450 480

Collector−Emitter Leakage Current ICES VCE = 15 V, VGE = 0 V TJ = 25°C 0.002 1.0 mA

VCE = 250 V, RG = 1 kWTJ = −40°C to 175°C 0.5 2.0 100

Reverse Collector−Emitter Clamp

Voltage

BVCES(R)

IC = −75 mA

TJ = 25°C 30 33 39 V

TJ = 175°C 31 35 40

TJ = −40°C 30 31 37

Reverse Collector−Emitter Leakage

Current

ICES(R)

VCE = −24 V

TJ = 25°C−0.4 1.0 mA

TJ = 175°C−20 35

TJ = −40°C−0.04 0.2

Gate−Emitter Clamp Voltage BVGES IG = "5.0 mA TJ = −40°C to 175°C 12 12.5 14 V

Gate−Emitter Leakage Current IGES VGE = "5.0 V TJ = −40°C to 175°C 200 316 350 mA

Gate Resistor RGTJ = −40°C to 175°C 70 W

Gate−Emitter Resistor RGE TJ = −40°C to 175°C 14.25 16 25 kW

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage VGE(th)

IC = 1.0 mA, VGE = VCE

TJ = 25°C 1.5 1.8 2.1 V

TJ = 175°C 0.7 1.0 1.3

TJ = −40°C 1.7 2.0 2.3

Threshold Temperature Coefficient

(Negative)

4.0 4.6 5.2 mV/°C

Collector−to−Emitter On−Voltage VCE(on) IC = 10 A, VGE = 3.7 V TJ = −40°C to 175°C 0.8 1.11 1.97 V

IC = 10 A, VGE = 4.0 V TJ = −40°C to 175°C 0.8 1.10 1.85

IC = 15 A, VGE = 4.0 V TJ = −40°C to 175°C 0.8 1.24 2.00

Forward Transconductance gfs IC = 6.0 A, VCE = 5.0 V TJ = 25°C 10 19 25 Mhos

DYNAMIC CHARACTERISTICS (Note 4)

Input Capacitance CISS

f = 10 kHz, VCE = 25 V TJ = 25°C

1100 1400 1600 pF

Output Capacitance COSS 50 65 80

Transfer Capacitance CRSS 15 20 25

NGB8245N

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ELECTRICAL CHARACTERISTICS

Characteristic UnitMaxTypMinTemperatureTest ConditionsSymbol

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time (Resistive)

10% VGE to 10% IC

td(on)R

VCC = 14 V, RL = 1.0 W,

RG = 1.0 kW, VGE = 5.0 V

TJ = −40°C to 175°C 0.1 1.0 2.0 ms

Rise Time (Resistive)

10% IC to 90% IC

trR TJ = −40°C to 175°C 1.0 3.4 6.0

Turn−Off Delay Time (Resistive)

90% VGE to 90% IC

td(off)R

VCC = 14 V, RL = 1.0 W,

RG = 1.0 kW, VGE = 5.0 V

TJ = −40°C to 175°C 2.0 4.5 8.0 ms

Fall Time (Resistive)

90% IC to 10% IC

tfR TJ = −40°C to 175°C 3.0 8.0 12

Turn−Off Delay Time (Inductive)

90% VGE to 90% IC

td(off)L VCE = BVCES, L = 0.5mH,

RG = 1.0 kW, IC = 10 A,

VGE = 5.0 V

TJ = −40°C to 175°C 6.5 9.7 12.5 ms

Fall Time (Inductive)

90% IC to 10% IC

tfL TJ = −40°C to 175°C 6.0 8.3 11

3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.

4. Not subject to production testing.

NGB8245N

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TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. Self Clamped Inductive Switching Figure 2. Open Secondary Avalanche Current

vs. Temperature

Figure 3. Collector−to−Emitter Voltage vs.

Junction Temperature

Figure 4. Collector Current vs.

Collector−to−Emitter Voltage

Figure 5. Collector Current vs.

Collector−to−Emitter Voltage

Figure 6. Collector Current vs.

Collector−to−Emitter Voltage

INDUCTOR (mH)

250

068

100

200

400

150

TJ = 25°C

SCIS ENERGY (mJ)

TJ, JUNCTION TEMPERATURE (°C)

−50 50 75250 100−25 125

175

VCC = 14 V

VGE = 5.0 V

RG = 1000 W

L = 10 mH

150

L = 3.0 mH

L = 1.8 mH

IA, AVALANCHE CURRENT (A)

1.25

TJ, JUNCTION TEMPERATURE (°C)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

−50 50 75250 100−25 125

0.5

1.5

0.25

1.0

0.0

1.75

2.0

0.75

150

VGE = 4.5 V

IC = 25 A

IC = 20 A

IC = 15 A

IC = 10 A

IC = 7.5 A

IC, COLLECTOR CURRENT (A)

81357

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = 175°C

VGE = 10 V

5 V

4.5 V

4 V

3.5 V

3 V

2.5 V

IC, COLLECTOR CURRENT (A)

81357

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = −40°C

VGE = 10 V

5 V

4.5 V

4 V

3.5 V

3 V

2.5 V

IC, COLLECTOR CURRENT (A)

81357

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = 25°C

VGE = 10 V

5 V

4.5 V

4 V

3.5 V

3 V

2.5 V

064

VCC = 14 V

VGE = 5.0 V

RG = 1000 W

350

300

TJ = 175°C

175

NGB8245N

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TYPICAL ELECTRICAL CHARACTERISTICS

TJ, JUNCTION TEMPERATURE (°C)

GATE THRESHOLD VOLTAGE (V)

−50 75 100250 125−25 175

Mean + 4 s

Mean − 4 s

Mean

VGE, GATE TO EMITTER VOLTAGE (V)

1.50

0.25

2.50

0.75

1.25

2.00

10000

1000

100

0.1

Figure 7. Transfer Characteristics Figure 8. Collector−to−Emitter Leakage

Current vs. Temperature

Figure 9. Gate Threshold Voltage vs.

Temperature

Figure 10. Capacitance vs.

Collector−to−Emitter Voltage

Figure 11. Resistive Switching Fall Time vs.

Temperature

TJ, JUNCTION TEMPERATURE (°C)

Figure 12. Inductive Switching Fall Time vs.

Temperature

TJ, JUNCTION TEMPERATURE (°C)

COLLECTOR TO EMITTER LEAKAGE

CURRENT (mA)

SWITCHING TIME (ms)

05025−25 125 175

TJ = 175°C

75 100 150

50 7525 100 175150

tfall

VCC = 300 V

VGE = 5.0 V

RG = 1000 W

IC = 9.0 A

L = 300 mH

VCE = 200 V

1.5 3 3.52.5 420.5

VCE = 5 V

IC, COLLECTOR CURRENT (A)

1.0

50 150

0.50

1.00

1.75

2.25

125

tdelay

10000

1000

100

0.1

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

C, CAPACITANCE (pF)

01552510 20

Crss

Ciss

Coss

1.0

TJ, JUNCTION TEMPERATURE (°C)

SWITCHING TIME (ms)

7550 100 175150

tfall

VCC = 300 V

VGE = 5.0 V

RG = 1000 W

IC = 9.0 A

RL = 33 W

25 125

tdelay

TJ = −40°C

TJ = 25°C

−50

VCE = −24 V

NGB8245N

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0.000001 0.0010.0001 0.1

100

0.01

t,TIME (S)

R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)

110100 1000

0.1

Figure 13. Minimum Pad Transient Thermal Resistance

(Non−normalized Junction−to−Ambient)

0.00001

0.2

Single Pulse

0.1

0.05

0.02

0.01

Duty Cycle = 0.5

0.000001 0.0010.0001 0.1

0.01

t,TIME (S)

RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)

0.1

Figure 14. Best Case Transient Thermal Resistance

(Non−normalized Junction−to−Case Mounted on Cold Plate)

0.00001

0.2

Single Pulse

0.1

0.05

0.02

0.01

Duty Cycle = 0.5

P(pk)

DUTY CYCLE, D = t1/t2

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TA = P(pk) RqJA(t)

For D=1: RqJC X R(t) for t ≤ 0.1 s

P(pk)

DUTY CYCLE, D = t1/t2

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TA = P(pk) RqJC(t)

NGB8245N

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PACKAGE DIMENSIONS

SEATING

PLANE

−T−

0.13 (0.005) T

231

3 PL

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.340 0.380 8.64 9.65

B0.380 0.405 9.65 10.29

C0.160 0.190 4.06 4.83

D0.020 0.035 0.51 0.89

E0.045 0.055 1.14 1.40

G0.100 BSC 2.54 BSC

H0.080 0.110 2.03 2.79

J0.018 0.025 0.46 0.64

K0.090 0.110 2.29 2.79

S0.575 0.625 14.60 15.88

V0.045 0.055 1.14 1.40

−B−

STYLE 4:

PIN 1. GATE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING

PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 418B−01 THRU 418B−03 OBSOLETE,

NEW STANDARD 418B−04.

F0.310 0.350 7.87 8.89

L0.052 0.072 1.32 1.83

M0.280 0.320 7.11 8.13

N0.197 REF 5.00 REF

P0.079 REF 2.00 REF

R0.039 REF 0.99 REF

VIEW W−W

D2PAK 3

CASE 418B−04

ISSUE K

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

8.38

0.33

1.016

0.04

17.02

0.67

10.66

0.42

3.05

0.12

5.08

0.20

ǒmm

inchesǓ

SCALE 3:1

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