© Semiconductor Components Industries, LLC, 2011
May, 2018 − Rev. 1
1Publication Order Number:
2N7002KW/D
2N7002KW
N-Channel Enhancement
Mode Field Effect
Transistor
Features
•Low On−Resistance
•Low Gate Threshold Voltage
•Low Input Capacitance
•Fast Switching Speed
•Low Input/Output Leakage
•Ultra−Small Surface Mount Package
•These Devices are Pb−Free and are RoHS Compliant
•ESD HBM = 1000 V as per JESD22 A114 and ESD CDM = 1500 V
as per JESD22 C101
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−Source Voltage VDSS 60 V
Gate−Source Voltage VGSS ±20 V
Maximum Drain Current Continuous
TJ = 100°C
Pulsed
ID310
195
1.2
mA
mA
A
Operating Junction Temperature Range TJ−55 to
+150
°C
Storage Temperature Range TSTG −55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Parameter Symbol Value Unit
Total Device Dissipation
Derating above TA = 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance,
Junction to Ambient*
RqJA 410 °C/W
*Device mounted on FR−4 PCB, 1″ x 0.85″ x 0.062″. Minimum land pad size
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SC−70
3 LEAD
CASE 419AB
G
S
D
MARKING DIAGRAM
Device Package Shipping†
ORDERING INFORMATION†
2N7002KW SC−70 3000 / Tape &
Reel
7KW
7KW = Specific Device Marking
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
GS
D
2N7002KW
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS Drain−Source Breakdown Voltage VGS =0V, I
D=10mA60 − − V
IDSS Zero Gate Voltage Drain Current VDS =60V, V
GS =0V
VDS =60V, V
GS =0V, T
J = 125°C
− − 1.0
0.5
mA
mA
IGSS Gate−Body Leakage VDS =0V, V
GS =±20 V − − ±10 mA
ON CHARACTERISTICS (Note 1)
VGS(th) Gate Threshold Voltage VDS =V
GS, ID= 250 mA1.1 −2.1 V
RDS(on) Static Drain−Source On−Resistance VGS =10V, I
D= 500 mA
VGS =10V, I
D= 500 mA, TJ = 100°C
VGS =5V, I
D= 50 mA
VGS =5V, I
D= 50 mA, TJ = 100°C
− − 1.6
2.4
2
3
W
VDS(on) Drain−Source On−Voltage VGS =10V, I
D= 500 mA
VGS =5V, I
D= 50 mA
− − 3.75
1.5
V
ID(on) On−State Drain Current VGS =10V, V
DS = 2 V 500 − − mA
gFS Forward Transconductance VDS =2V, I
D= 0.2 A 80 − − mS
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS =25V, V
GS = 0 V, f = 1.0 MHz − − 50 pF
Coss Output Capacitance − − 25 pF
Crss Reverse Transfer Capacitance − − 5 pF
SWITCHING CHARACTERISTICS
td(on) Turn-On Delay Time VDD =30V, R
L = 150 W, VGS =10V,
ID = 200 mA, RGEN =25W
− − 20 ns
td(off) Turn-Off Delay Time − − 60 ns
DRAIN−SOURCE DIODE CHARACTERISTICS
ISMaximum Continuous Drain−Source Diode Forward Current − − 115 mA
ISM Maximum Pulsed Drain−Source Diode Forward Current − − 0.8 A
VSD Drain−Source Diode Forward Voltage VGS =0V, I
S= 115 mA − − 1.1 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
2N7002KW
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3
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with
Temperature
Figure 3. On−Resistance Variation with Gate
Voltage and Drain Current
Figure 4. On−Resistance Variation with Drain
Current and Temperature
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with
Temperature
0.0
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
7V
VGS
= 3V
4V
5V
8V
9V
6V
VGS = 10V
ID. Drain−Source Current (A)
VDS. Drain−Source Voltage (V)
−50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
VGS
= 5V
ID = 50mA
(W)
VGS
= 10V
ID = 500mA
RDS(on)
Normalized Drain−Source On−Resistance
TJ. Junction Temperature ( oC)
0.0 0.5 1.0 1.5 2.0
0.5
1.0
1.5
2.0
2.5
3.0
9V
(W)
8V
6V
VGS
= 7V
10V
4.5V
5V
VGS
= 4V
RDS(on),
Drain−Source On−Resistance
ID. Drain−Source Current(A)
0.0 0.5 1.0 1.5 2.0
0
1
2
3
4
5
TA = −55 oC
TA = 25oC
TA = 125oC
(W)
VGS = 10V
RDS(on)
Drain−Source On−Resistance
ID. Drain Current (A)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VGS
. Gate−Source Voltage (V)
TA = 125(oC)
TA = 25(oC)
VDS
= 10V TA = −55(oC)
ID. Drain−Source Current (A)
−250255075100125
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
VDS
= V
GS
ID = 1mA
ID = 0.25mA
Vth.
Normalized Gate−Source Threshold Voltage (V)
TJ. Junction Temperature ( oC)
12345678910
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
2N7002KW
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4
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 7. Breakdown Voltage Variation with
Temperature
Figure 8. Body Diode Forward Voltage
Variation with Source Current and
Temperature
Figure 9. Capacitance Variation Figure 10. Gate Charge Characteristics
Figure 11. Maximum Safe Operating Area Figure 12. Transient Thermal Response Curve
−25 0 25 50 75 100 125
0.925
0.950
0.975
1.000
1.025
1.050
1.075
1.100
ID=250uA
BVdss , Normalized
Drain Source Breakdown Voltage
TJ, Junction Temperatture( oC)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
1000
10000
TA=−55oC
VGS = 0 V
TA=125oC
TA=25oC
IS. Reverse Drain Current [mA]
VSD. Body Diode Forward Voltage [V]
1 10 100
1
10
100
CRSS
COSS
f = 1MHZ
VGS
= 0V
CISS
CISS, COSS, CRSS . Capacitance (pF)
VDS
. Drain to Source Voltage (V)
0.0 0.2 0.4 0.6 0.8 1.0
0
2
4
6
8
10
ID = 115mA ID = 280mA
VDS = 25V
ID = 500mA
VGS. Gate−Source Voltage (V)
Qg. Gate Charge (nC)
10−1100101102
10−4
10−3
10−2
10−1
100
1ms
10ms
DC
1S
100ms
100ms
RDS(on) Limit
Vgs=10V
Single Pulse
Rthja=410o
a = 25oC
ID, Drain Current [A]
VDS
, Drain−Source Voltage [V]
1E−41E−3 0.01 0.1 1 10 100 1000
0.01
0.1
1
50%
r(t), Normalized Transient Thermal Resistance
t1, time(sec)
Single Pulse
20%
10%
5%
2%
D=1%
Rthja(t)=r(t)*Rthja
Rthja=410 oC/W
T
C/W
SC−70, 3 Lead, 1.25x2
CASE 419AB−01
ISSUE O
DATE 19 DEC 2008
E1
D
A
L
L1 L2
ee
bA1
A2
c
TOP VIEW
SIDE VIEW END VIEW
q1
q1
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MO-203.
SYMBOL MIN NOM MAX
E
q
θ
A
A1
b
c
D
E
E1
e
L
0º 8º
L2
0.00
0.15
0.08
0.26
1.80
1.80
1.15
0.65 BSC
0.15 BSC
1.10
0.10
0.30
0.22
0.46
2.20
2.40
1.35
L1
0.80
θ1 4º 10º
A2 0.80 1.00
0.42 REF
0.36
2.00
2.10
1.25
0.90
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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SC−70, 3 LEAD, 1.25X2
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