D
FN
2
0
2
0
M
D-
6
PMPB20EN
30 V N-channel Trench MOSFET
14 January 2014 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Very fast switching
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
3. Applications
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portables
Hard disk and computing power management
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - 30 V
VGS gate-source voltage
Tj = 25 °C
-20 - 20 V
IDdrain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - - 10.4 A
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 7 A; Tj = 25 °C - 16.5 19.5
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
NXP Semiconductors PMPB20EN
30 V N-channel Trench MOSFET
PMPB20EN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 14 January 2014 2 / 15
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 D drain
3 G gate
4 S source
5 D drain
6 D drain
7 D drain
8 S source
6
5
7
84
Transparent top view
1
2
3
DFN2020MD-6 (SOT1220)
S
D
G
017aaa253
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMPB20EN DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline
package; no leads; 6 terminals
SOT1220
7. Marking
Table 4. Marking codes
Type number Marking code
PMPB20EN 1B
NXP Semiconductors PMPB20EN
30 V N-channel Trench MOSFET
PMPB20EN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 14 January 2014 3 / 15
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 30 V
VGS gate-source voltage
Tj = 25 °C
-20 20 V
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - 10.4 A
VGS = 10 V; Tamb = 25 °C [1] - 7.2 A
IDdrain current
VGS = 10 V; Tamb = 100 °C [1] - 4.6 A
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 30 A
Tamb = 25 °C [1] - 1.7 W
Tamb = 25 °C; t ≤ 5 s [1] - 3.5 W
Ptot total power dissipation
Tsp = 25 °C - 12.5 W
Tjjunction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode
ISsource current Tamb = 25 °C [1] - 2.2 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Fig. 2. Normalized continuous drain current as a
function of junction temperature
NXP Semiconductors PMPB20EN
30 V N-channel Trench MOSFET
PMPB20EN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 14 January 2014 4 / 15
017aaa541
1
10-1
10
102
ID
(A)
10-2
VDS (V)
10-1 102
101
Limit RDSon = VDS/IDtp = 10 µs
tp = 100 µs
tp = 1 ms
tp = 10 ms
DC; Tsp = 25 °C tp = 100 ms
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 235 270 K/W
[2] - 67 74 K/W
Rth(j-a) thermal resistance
from junction to
ambient
in free air
[3] - 33 36 K/W
Rth(j-sp) thermal resistance
from junction to solder
point
- 5 10 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s
NXP Semiconductors PMPB20EN
30 V N-channel Trench MOSFET
PMPB20EN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 14 January 2014 5 / 15
017aaa542
tp (s)
10-3 102103
10110-2 10-1
102
10
103
Zth(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33 0.25
0.2
0.1
0.05
0.02
0.01 0
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa543
tp (s)
10-3 102103
10110-2 10-1
102
10
103
Zth(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33 0.25
0.2 0.1
0.05
0.02
0.01
0
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors PMPB20EN
30 V N-channel Trench MOSFET
PMPB20EN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 14 January 2014 6 / 15
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V
VGSth gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C 1 1.5 2 V
VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µAIDSS drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 20 µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nAIGSS gate leakage current
VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA
VGS = 10 V; ID = 7 A; Tj = 25 °C - 16.5 19.5
VGS = 10 V; ID = 7 A; Tj = 150 °C - 27 32
RDSon drain-source on-state
resistance
VGS = 4.5 V; ID = 7 A; Tj = 25 °C - 20.5 24.5
gfs forward
transconductance
VDS = 10 V; ID = 7 A; Tj = 25 °C - 8 - S
RGgate resistance f = 1 MHz - 1.7 - Ω
Dynamic characteristics
QG(tot) total gate charge - 7.2 10.8 nC
QGS gate-source charge - 1 - nC
QGD gate-drain charge
VDS = 15 V; ID = 5 A; VGS = 10 V;
Tj = 25 °C
- 0.67 - nC
Ciss input capacitance - 435 - pF
Coss output capacitance - 90 - pF
Crss reverse transfer
capacitance
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
- 35 - pF
td(on) turn-on delay time - 9 - ns
trrise time - 17 - ns
td(off) turn-off delay time - 9 - ns
tffall time
VDS = 15 V; ID = 5 A; VGS = 4.5 V;
RG(ext) = 1.7 Ω; Tj = 25 °C
- 8 - ns
Source-drain diode
VSD source-drain voltage IS = 2.2 A; VGS = 0 V; Tj = 25 °C - 0.8 1.2 V
NXP Semiconductors PMPB20EN
30 V N-channel Trench MOSFET
PMPB20EN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 14 January 2014 7 / 15
VDS (V)
0 431 2
017aaa544
10
15
5
20
25
ID
(A)
0
VGS = 10 V
3.5 V
3.2 V
3.0 V
2.9 V
2.7 V
2.6 V
2.5 V
Tj = 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
017aaa545
10-5
10-4
10-3
10-2
ID
(A)
10-6
VGS (V)
0.0 2.52.01.0 1.50.5
min typ max
Tj = 25 °C; VDS = 5 V
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
ID (A)
0 252010 155
017aaa546
0.04
0.06
0.02
0.08
0.10
RDSon
(Ω)
0.00
VGS = 2.75 V
2.5 V 3.0 V 3.25 V
3.5 V 3.75 V
10 V
4.5 V
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
VGS (V)
0 1084 62
017aaa547
0.04
0.06
0.02
0.08
0.10
RDSon
(Ω)
0.00
Tj= 25 °C
Tj= 150 °C
ID = 8 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
NXP Semiconductors PMPB20EN
30 V N-channel Trench MOSFET
PMPB20EN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 14 January 2014 8 / 15
VGS (V)
0 431 2
017aaa548
10
20
30
ID
(A)
0
Tj= 25 °CTj= 150 °C
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Tj (°C)
-60 1801200 60
017aaa549
1.0
1.4
1.8
a
0.6
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
Tj (°C)
-60 1801200 60
017aaa560
1.0
1.5
0.5
2.0
2.5
VGS(th)
(V)
0.0
min
typ
max
ID = 0.25 mA; VDS = VGS
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
017aaa550
VDS (V)
10-1 102
101
102
103
C
(pF)
10
Ciss
Coss
Crss
f = 1 MHz; VGS = 0 V
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
NXP Semiconductors PMPB20EN
30 V N-channel Trench MOSFET
PMPB20EN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 14 January 2014 9 / 15
QG (nC)
0 862 4
017aaa551
4
6
2
8
10
VGS
(V)
0
ID = 5 A; VDS = 15 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
017aaa137
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
Fig. 15. Gate charge waveform definitions
VSD (V)
0.0 1.00.80.4 0.60.2
017aaa552
1.0
1.5
0.5
2.0
2.5
IS
(A)
0.0
Tj= 25 °CTj= 150 °C
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
NXP Semiconductors PMPB20EN
30 V N-channel Trench MOSFET
PMPB20EN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 14 January 2014 10 / 15
11. Test information
t1
t2
P
t
006aaa812
duty cycle δ =
t1
t2
Fig. 17. Duty cycle definition
12. Package outline
12-04-30Dimensions in mm
1.1
1.3
1.9
2.1
1.9
2.1 1.0
1.2
3
2
1
4
5
6
0.51
0.61
0.2
0.3
0.65
0.25
0.35
0.2
0.3
Fig. 18. Package outline DFN2020MD-6 (SOT1220)
NXP Semiconductors PMPB20EN
30 V N-channel Trench MOSFET
PMPB20EN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 14 January 2014 11 / 15
13. Soldering
1.35
1.25
1.05
0.9
1.1
1.2
2.5
0.935 0.935
SOT1220Footprint information for reflow soldering of DFN2020MD-6 package
sot1220_fr
occupied area
solder land
solder resist
solder land plus solder paste
solder paste deposit
Dimensions in mm
0.33 (6×) 0.76
0.66
0.56
0.25 0.35 0.45
0.25 (6×)
0.35 (6×)
0.65
0.65
0.45 (6×)
0.43 (6×)
0.53 (6×)
2.06
0.775
0.285
Fig. 19. Reflow soldering footprint for DFN2020MD-6 (SOT1220)
NXP Semiconductors PMPB20EN
30 V N-channel Trench MOSFET
PMPB20EN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 14 January 2014 12 / 15
14. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PMPB20EN v.2 20140114 Product data sheet - PMPB20EN v.1
Modifications: Table 7: parameter value of VDS corrected from 10 V to 15 V in capacitance condition.
Figure 16: VSD parameter corrected.
PMPB20EN v.1 20120516 Product data sheet - -
NXP Semiconductors PMPB20EN
30 V N-channel Trench MOSFET
PMPB20EN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 14 January 2014 13 / 15
15. Legal information
15.1 Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
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malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
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customer’s applications and products planned, as well as for the planned
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associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
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applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
NXP Semiconductors PMPB20EN
30 V N-channel Trench MOSFET
PMPB20EN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 14 January 2014 14 / 15
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
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Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
NXP Semiconductors PMPB20EN
30 V N-channel Trench MOSFET
PMPB20EN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 14 January 2014 15 / 15
16. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information ............................................. 2
7 Marking ................................................................... 2
8 Limiting values .......................................................3
9 Thermal characteristics .........................................4
10 Characteristics ....................................................... 6
11 Test information ................................................... 10
12 Package outline ................................................... 10
13 Soldering .............................................................. 11
14 Revision history ...................................................12
15 Legal information .................................................13
15.1 Data sheet status ............................................... 13
15.2 Definitions ...........................................................13
15.3 Disclaimers .........................................................13
15.4 Trademarks ........................................................ 14
© NXP N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
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Date of release: 14 January 2014
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