SSM6L16FE TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type(-MOSVI) SSM6L16FE High Speed Switching Applications Analog Switch Applications Unit: mm * Small package * Low on-resistance Q1: RDS(ON) = 4 (max) (@VGS = 2.5 V) Q2: RDS(ON) = 12 (max) (@VGS = -2.5 V) Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 20 V Gate-Source voltage VGSS 10 V DC ID 100 Pulse IDP 200 Drain current mA 1: Source1 2: Gate1 3: Drain2 4: Source2 5: Gate2 6: Drain1 Q2 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS -20 V Gate-Source voltage VGSS 10 V DC ID -100 Pulse IDP -200 Drain current mA JEDEC JEITA TOSHIBA 2-2N1D Weight: 3 mg (typ.) Absolute Maximum Ratings (Q1, Q2 Common) (Ta = 25C) Characteristics Symbol Rating Unit PD (Note 1) 150 mW Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Power dissipation Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 mm, Cu Pad: 0.135 mm x 6) 0.45 mm 0.3 mm 1 http://store.iiic.cc/ 2011-02-03 SSM6L16FE Marking 6 Equivalent Circuit (top view) 5 4 6 2 4 Q1 K6 1 5 Q2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 2 http://store.iiic.cc/ 2011-02-03 SSM6L16FE Q1 Electrical Characteristics (Ta = 25C) Characteristic Symbol MAX. UNIT 1 A V (BR) DSS ID = 0.1 mA, VGS = 0 20 V IDSS VDS = 20 V, VGS = 0 1 A Gate threshold voltage Forward transfer admittance Vth VDS = 3 V, ID = 0.1 mA 0.6 1.1 V Yfs VDS = 3 V, ID = 10 mA (Note2) 40 mS ID = 10 mA, VGS = 4 V (Note2) 1.5 3.0 ID = 10 mA, VGS = 2.5 V (Note2) 2.2 4.0 ID = 1 mA, VGS = 1.5 V (Note2) 5.2 15 9.3 pF 4.5 pF 9.8 pF 70 125 RDS (ON) Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time TYP. VGS = 10 V, VDS = 0 Drain cut-off current Drain-Source on-resistance MIN. IGSS Gate leakage current Drain-Source breakdown voltage Test Condition Turn-on time ton Turn-off time toff VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ns Note2: Pulse test Switching Time Test Circuit (a) Test circuit 2.5 V OUT IN 50 0 10 s VDD = 3 V Duty < = 1% VIN: tr, tf < 5 ns (Zout = 50 ) Common Source Ta = 25C (b) VIN RL VDD 2.5 V 0V (c) VOUT 90% 10% VDD 90% 10% VDS (ON) tr ton tf toff Precaution Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = 0.1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device. 3 http://store.iiic.cc/ 2011-02-03 SSM6L16FE Q2 Electrical Characteristics (Ta = 25C) Characteristic Symbol MAX. UNIT 1 A V (BR) DSS ID = -0.1 mA, VGS = 0 -20 V IDSS VDS = -20 V, VGS = 0 -1 A Gate threshold voltage Forward transfer admittance Vth VDS = -3 V, ID = -0.1 mA -0.6 -1.1 V Yfs VDS = -3 V, ID = -10 mA (Note3) 25 mS ID = -10 mA, VGS = -4 V (Note3) 6 8 ID = -10 mA, VGS = -2.5 V (Note3) 8 12 ID = -1 mA, VGS = -1.5 V 18 45 11 pF 3.7 pF 10 pF 130 190 RDS (ON) Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time TYP. VGS = 10 V, VDS = 0 Drain cut-off current Drain-Source on-resistance MIN. IGSS Gate leakage current Drain-Source breakdown voltage Test Condition Turn-on time ton Turn-off time toff (Note3) VDS = -3 V, VGS = 0, f = 1 MHz VDD = -3 V, ID = - 10 mA, VGS = 0 ~ -2.5 V ns Note3: Pulse test Switching Time Test Circuit (a) Test circuit 0 OUT (b) VIN 0V 90% IN 50 -2.5V 10 s VDD 10% -2.5 V RL (c) VOUT VDD = -3 V Duty < = 1% VIN: tr, tf < 5 ns (Zout = 50 ) Common Source Ta = 25C VDS (ON) 90% 10% VDD tr ton tf toff Precaution Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = - 0.1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device. 4 http://store.iiic.cc/ 2011-02-03 SSM6L16FE Q1 (N-ch MOSFET) ID - VDS ID - VGS 250 (mA) 2.3 2.1 ID 1.9 150 Drain current Drain current ID 4 3 10 (mA) Common source Ta = 25C Pulse test 2.5 200 1000 1.7 100 1.5 50 100 Common source VDS = 3 V Pulse test Ta = 100C 10 25C -25C 1 0.1 VGS = 1.3 V 0 0 0.5 1 1.5 Drain-Source voltage 0.01 0 2 1 VDS (V) Gate-Source voltage RDS (ON) - ID 12 2 VGS (V) RDS (ON) - VGS 6 Common source Common source Ta = 25C 8 VGS = 1.5 V 6 ID = 10 mA 5 Pulse test Drain-Source on-resistance RDS (ON) () Drain-Source on-resistance RDS (ON) () 10 4 2.5 V 2 Pulse test 4 3 Ta = 100C 2 25C 1 -25C 4V 0 1 10 100 0 0 1000 2 4 RDS (ON) - Ta 2.0 Common source 1.8 Vth (V) Pulse test VGS = 1.5 V, ID = 1 mA Gate threshold voltage Drain-Source on-resistance RDS (ON) () 8 10 VGS (V) Vth - Ta 8 4 2.5 V, 10 mA 2 6 Gate-Source voltage Drain current ID (mA) 6 3 4 V, 10 mA 1.6 Common source ID = 0.1 mA VDS = 3 V 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -25 0 25 50 75 100 125 0 -25 150 Ambient temperature Ta (C) 0 25 50 75 100 125 150 Ambient temperature Ta (C) 5 http://store.iiic.cc/ 2011-02-03 SSM6L16FE Q1 (N-ch MOSFET) Yfs - ID IDR - VDS 500 Common source VDS = 3 V Drain reverse current IDR (mA) Forward transfer admittance Yfs (mS) 300 250 Ta = 25C 100 Pulse test 30 10 3 1 1 10 100 200 Pulse test D 150 IDR G S 100 50 0 0 1000 Common source VGS = 0 V Ta = 25C -0.2 Drain current ID (mA) -0.4 -0.6 -0.8 Drain-Source voltage -1 VDS -1.4 (V) t - ID C - VDS 100 5000 Common source VDD = 3 V VGS = 0~2.5 V Ta = 25C 3000 30 (pF) Switching time t (ns) toff 10 Capacitance C -1.2 Ciss Coss 3 Crss Common source 1 VGS = 0 V f = 1 MHz 1000 tf 300 100 ton 30 tr Ta = 25C 0.3 0.1 1 Drain-Source voltage 10 100 10 0.1 VDS (V) 1 10 100 Drain current ID (mA) 6 http://store.iiic.cc/ 2011-02-03 SSM6L16FE Q2 (P-ch MOSFET) ID - VDS ID - VGS -3 -150 -2.7 (mA) -4 -2.5 ID -10 -200 -1000 Common Source Ta = 25C Pulse test Drain current Drain current ID (mA) -250 -2.3 -100 -2.1 -1.9 -50 -1.7 Common Source VDS = -3 V Pulse test -100 Ta = 100C -10 25C -25C -1 -0.1 VGS = -1.5 V 0 0 -0.5 -1 -1.5 Drain - Source voltage VDS -0.01 0 -2 (V) Drain - Source on-resistance RDS (ON) () Drain - Source on-resistance RDS (ON) () VGS (V) Common Source ID = -1 mA Pulse test 18 20 15 -2.5 V -4 V 16 14 12 10 8 Ta=100 25 6 4 -25 2 0 0 -1 -10 -100 Drain current ID 0 -1000 -2 -4 Pulse 30 Gate threshold voltage 25 VGS =-1.5 V, ID=-1mA 20 15 -2.5 V, -10mA 10 5 0 -25 -4V, -10mA 0 25 50 75 -10 VGS (V) Vth - Ta -2.0 Common Source Vth (V) 35 -8 -6 Gate - Source voltage (mA) RDS (ON) - Ta 40 Drain - Source on-resistance RDS (ON) () -4 RDS (ON) - VGS VGS = -1.5 V 5 -3 20 Common Source Ta = 25C Pulse test 10 -2 Gate - Source voltage RDS (ON) - ID 30 25 -1 100 Ambient temperature Ta 125 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 -25 150 Common Source ID = -0.1 mA VDS = -3 V (C) 0 25 50 75 100 Ambient temperature Ta 7 http://store.iiic.cc/ 125 150 (C) 2011-02-03 SSM6L16FE Q2 (P-ch MOSFET) (mA) 200 IDR 100 IDR - VDS 250 Common Source VDS =-3 V Ta = 25C Pulse test Drain reverse current (mS) Yfs 300 Forward transfer admittance Yfs - ID 1000 30 10 3 1 -1 -10 -100 Drain current ID Common Source VGS = 0 V Ta = 25C Pulse test D 150 S 100 50 0 0 -1000 IDR G 0.2 (mA) 0.4 0.6 Drain - Source VDS 1.2 1.4 (V) 10000 Common Source VGS = 0 V f = 1 MHz Ta = 25C Common Source VDD = -3 V VGS = 0~-2.5 V Ta = 25C (ns) 3000 toff 1000 t 100 10 Switching time C (pF) 1.0 t - ID C - VDS 1000 Capacitance 0.8 Ciss Coss tf 300 100 ton tr 30 Crss 1 -0.1 -1 -10 10 -0.1 -100 Drain - Source voltage VDS (V) -1 Drain current ID -10 -100 (mA) Common Characteristics PD* - Ta Power dissipation PD* (mW) 250 Mounted on FR4 board (25.4mmX25.4mmX1.6mm Cu Pad:0.135mm2X6 200 150 100 50 0 0 20 40 60 80 100 Ambient temperature 120 Ta 140 160 (C) *:Total rating 8 http://store.iiic.cc/ 2011-02-03 SSM6L16FE RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 9 http://store.iiic.cc/ 2011-02-03