FAST RECOVERY
GLASS PASSIVATED RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
FEATURES
* Fast switching
* Low leakage
* Low forward voltage drop
* High current capability
* High surge capability
* High reliability
MECHANICAL DATA
* Case: ITO-220A molded plastic
* Epoxy: Device has U L flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 2.24 grams
* Polarity: As marking
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS
(At TA = 25oC unless otherwise noted)
IFR801
THRU
IFR807
ITO-220A
MAXIMUM RATINGS
(At TA = 25oC unless otherwise noted)
NOTES :
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts
1. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = - 0.25A
3. Thermal Resistance Junction to Case.
4. Suffix “R” for Reverse Polarity.
Dimensions in inches and (millimeters)
2003-1
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at T
C
= 75
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
SYMBOL
V
RRM
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
V
RMS
UNITS
Volts
Volts
Volts
Amps8.0
200
50
-55 to + 150
Amps
pF
0
C
Operating and Storage Temperature Range
Typical Thermal Resistance (Note 3) Rθ
JC
3
0
C/W
at Rated DC Blocking Voltage T
A
= 25
o
C
CHARACTERISTICS
Maximum Full Load Reverse Current Average,
Full Cycle at T
C
= 100
o
C
Maximum Reverse Recovery Time (Note 1)
V
F
SYMBOL
I
R
trr
UNITS
1.3
10
150 uAmps
uAmps
nSec
Maximum DC Reverse Current
Maximum Instantaneous Forward Voltage at 8.0A DC Volts
150 250 500
IFR801 IFR802 IFR803 IFR804 IFR805 IFR806
IFR801 IFR802 IFR803 IFR804 IFR805 IFR806
35 70 140 280 420 560
50 100 200 400 600 800
50 100 200 400 600 800 IFR807
700
1000
1000
IFR807
.138(3.5)
.406(10.3)
.114(2.9)
.055(1.4)
.382(9.7)
.098(2.5)
.039(1.0)
.169(4.3)
.110(2.8)
.602(15.3)
.035(0.9)
.108(2.75)
.091(2.30)
.020(0.5)
.579(14.7)
.031(0.8)
.016 (0.4)
.185(4.7)
.122(3.1)
.154 (3.9)
.138 (3.5)
.071(1.8)
.055(1.4) .531(13.5)
.492(12.5)
.114(2.9)
.098(2.5)
.134(3.4)
.04MAX.
(1.0)
RR
RR
REE
EE
ECC
CC
CTT
TT
TRR
RR
ROO
OO
ONN
NN
N
RATING AND CHARACTERISTIC CURVES ( IFR801 THRU IFR807 )
FIG. 1 - TYPICAL FORWARD CURRENT
AVERAGE FORWARD CURRENT, (A)
CASE TEMPERATURE, (
o
C)
DERATING CURVE
Single Phase Half Wave
60Hz Inductive or
Resistive Load
8
6
4
2
00 25 50 75 100 125 150 175
JUNCTION CAPACITANCE, (pF)
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE, ( V )
200
100
60
40
20
10
6
4
2
1.1 .2 .4 1.0 2 4 10 20 40 100
TJ = 25
o
C
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS FORWARD VOLTAGE, (V)
TJ = 25
o
C
Pulse Width=300uS
1% Duty Cycle
20
10
3.0
1.0
0.3
0.1
.03
.010.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
trr
+0.5A
0
-0.25A
-1.0A 1cm SET TIME BASE FOR
50/100 ns/cm
FIG. 6 - TEST CIRCUIT DIAGRAM AND REVERSE
50
NONINDUCTIVE 10
NONINDUCTIVE
D.U.T
25 Vdc
(approx)
( - )
( - )
( + )
( + )
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
RECOVERY TIME CHARACTERISTIC
TJ = 25
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
CURRENT, (uA)
10
.01
.02
.04
.06
.1
.2
.4
.6
1.0
2
4
6
0 20 40 60 80 100 120 140
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
PEAK FORWARD SURGE
NUMBER OF CYCLES AT 60Hz
300
250
200
150
100
50
01 2 5 10 20 50 100
SURGE CURRENT
CURRENT, (A)
8.3ms Single Half
Sine-Wave
(JEDED Method)
