Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 5.0V 9.0
ID @ TC = 100°C Continuous Drain Current, VGS @ 5.0V 5.7 A
IDM Pulsed Drain Current 36
PD @TC = 25°C Power Dissipation 74
PD @TC = 25°C Power Dissipation (PCB Mount)** 3.1
Linear Derating Factor 0.59
Linear Derating Factor (PCB Mount)** 0.025
VGS Gate-to-Source Voltage ±10 V
EAS Single Pulse Avalanche Energy 250 mJ
IAR Avalanche Current 9.0 A
EAR Repetitive Avalanche Energy 7.4 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
IRL630S
HEXFET® Power MOSFET
PD - 9.1254
Revision 0
VDSS = 200V
RDS(on) = 0.40Ω
ID = 9.0A
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The SMD-220 is suitable
for high current applications because of its low internal connection resistance and
can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case –––– –––– 1.7
RθJA Junction-to-Ambient (PCB Mount)** –––– –––– 40 °C/W
RθJA Junction-to-Ambient –––– –––– 62
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
W/°C
W
°C
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
150°C Operating Temperature
Description
SMD-220
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.27 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.40 VGS = 5.0V, ID = 5.4A
––– ––– 0.50 VGS = 4.0V, ID = 4.5A
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 4.8 ––– ––– S VDS = 50V, ID = 5.4A
––– ––– 25 VDS = 200V, VGS = 0V
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 10V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V
QgTotal Gate Charge ––– ––– 40 ID = 9.0A
Qgs Gate-to-Source Charge ––– ––– 5.5 nC VDS = 160V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 24 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 8.0 ––– VDD = 100V
trRise Time ––– 57 ––– ID = 9.0A
td(off) Turn-Off Delay Time ––– 38 ––– RG = 6.0Ω
tfFall Time ––– 33 ––– RD = 11Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 1100 ––– VGS = 0V
Coss Output Capacitance ––– 220 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 70 ––– ƒ = 1.0MHz, See Fig. 5
IRL630S
Notes:
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 2.0 VTJ = 25°C, IS = 9.0A, VGS = 0V
trr Reverse Recovery Time ––– 230 350 ns TJ = 25°C, I F = 9.0A
Qrr Reverse RecoveryCharge ––– 1.7 2.6 µC di/dt = 100A/µs
ton Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 4.6mH
RG = 25Ω, IAS = 9.0A. (See Figure 12)
ISD ≤ 9.0A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
––– ––– 36
––– ––– 9.0 A
ns
IDSS Drain-to-Source Leakage Current
IGSS
LDInternal Drain Inductance ––– 4.5 –––
LSInternal Source Inductance ––– 7.5 ––– nH
nA
µA
RDS(ON) Static Drain-to-Source On-Resistance Ω
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
IRL630S
Fig 1. Typical Output Characteristics,
TC = 25oCFig 2. Typical Output Characteristics,
TC = 150oC
0.1
1
10
100
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 7.50V
5.00V
4.00V
3.50V
3.00V
2.75V
2.50V
BOTTOM 2.25V
2.25V
20µs PULSE WIDTH
T = 25°C
c
A
0.1
1
10
100
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 7.50V
5.00V
4.00V
3.50V
3.00V
2.75V
2.50V
BOTTOM 2.25V
2.25V
20µs PULSE WIDTH
T = 150°C
C
A
0.01
0.1
1
10
100
2.0 2.5 3.0 3.5 4.0 4.5 5.0
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
V = 50V
20µs PULSE WIDTH
DS
A
0.0
0.5
1.0
1.5
2.0
2.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on) (Normalized)
V = 5.0V
GS
I = 9.0A
D
A
IRL630S
Fig 7. Typical Source-Drain Diode
Forward Voltage Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
500
1000
1500
2000
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
0 10 20 30 40
Q , Total Gate Charge (nC)
G
FOR TEST CIRCUIT
SEE FIGURE 13
V , Gate-to-Source Voltage (V)
GS
I = 9.0A
V = 160V
V = 100V
V = 40V
D
DS
DS
DS
A
0.1
1
10
100
00.4 0.8 1.2 1.6
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
0.1
1
10
100
1 10 100 1000
V , Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
T = 25°C
T = 150°C
Single Pulse
C
J
10µs
100µs
1ms
10ms
100ms
IRL630S
Fig 10a. Switching Time Test Circuit
VDS
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 9. Maximum Drain Current Vs.
Case Temperature Fig 10b. Switching Time Waveforms
RD
VGS
VDD
RGD.U.T.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0
2
4
6
8
10
25 50 75 100 125 150
C
I , Drain Current (Amps)
D
T , Case Temperature (°C)
A
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)
1
thJC
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
A
A
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
12
JDMthJC
C
IRL630S
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
5.0V
5.0V
0
100
200
300
400
500
600
25 50 75 100 125 150
V = 50V
Starting T , Juntion Temperature (°C)
J
E , Single Pulse Avalanche Energy (mJ)
AS
DD
I
TOP 9.0A
5.7A
BOTTOM 4.0A
D
A
IRL630S
Fig 14. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
Package Outline
IRL630S
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST
ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371
Data and specifications subject to change without notice.
SMD-220 Outline
Tape and Reel Information
Part Marking Information
