© 2009 IXYS CORPORATION, All Rights Reserved
Features
zInternational Standard Packages
JEDEC TO-247AD & TO-268
zIGBT and Anti-Parallel FRED for
Resonant Power Supplies
- Induction Heating
- Rice Cookers
zMOS Gate Turn-On
zFast Recovery Expitaxial Diode (FRED)
- Soft Recovery with Low IRM
Advantages
zSaves Space (Two Devices in One
Package)
zEasy to Mount with 1 Screw
(Isolated Mounting Screw Hole)
zReduces Assembly Time and Cost
Applications
•Switch-Mode and Resonant-Mode
Power Supplies
•Uninterruptible Power Supplies (UPS)
•DC Choppers
•AC Motor Speed Drives
•DC Servo and Robot Drives
DS98988G(08/09)
IXGH28N120BD1
IXGT28N120BD1
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1200 V
VCGR TJ= 25°C to 150°C, RGE = 1MΩ1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C ( Chip Capability ) 50 A
IC100 TC= 100°C 28 A
IF90 TC= 90°C 10 A
ICM TC= 25°C, 1ms 150 A
SSOA VGE = 15V, TJ = 125°C, RG = 5Ω ICM = 120 A
(RBSOA) Clamped Inductive Load 0.8 • VCES
PCTC= 25°C 250 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062 in.) from Case for 10 260 °C
MdMounting Torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-286 4 g
High Voltage IGBT
w/ Diode
VCES = 1200V
IC25 = 50A
VCE(sat) ≤≤
≤≤
≤ 3.5V
tfi(typ) = 170ns
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
VGE(th) IC= 250μA, VCE = VGE 2.5 5.0 V
ICES VCE = VCES, VGE= 0V 50 μA
TJ = 125°C, Note1 250 μA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC = 28A, VGE = 15V, Note 2 2.9 3.5 V
TJ = 125°C 2.8 V
TO-247AD (IXGH)
G = Gate C = Collector
E = Emitter TAB = Collector
TO-268 (IXGT)
(TAB)
GCE
C (TAB)
G
E
IXYS reserves the right to change limits, test conditions and dimensions.
IXGH28N120BD1
IXGT28N120BD1
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
VF IF = 10A, VGE = 0V, Note 2 3.2 V
TJ = 100°C 2.3 V
IRM 14 A
trr 120 ns
trr 40 ns
RthJC 2.5 °C/W
IF = 10A, VGE = 0V,
-diF/dt = 400A/μs, VR = 600V
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 28A, VCE = 10V, Note 2 15 23 S
Cies 1700 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 130 pF
Cres 45 pF
Qg 92 nC
Qge IC = 28A, VGE = 15V, VCE = 0.5 • VCES 13 nC
Qgc 35 nC
td(on) 30 ns
tri 20 ns
td(off) 210 280 ns
tfi 170 320 ns
Eoff 2.2 5.0 mJ
td(on) 35 ns
tri 28 ns
Eon 1.4 mJ
td(off) 250 ns
tfi 340 ns
Eoff 4.6 mJ
RthJC 0.50 °C/W
RthCK (TO-247) 0.21 °C/W
Inductive load, TJ = 25°C
IC = 28A, VGE = 15V
VCE = 0.8 • VCES, RG = 5Ω
Note 3
Inductive load, TJ = 125°C
IC = 28A, VGE = 15V
VCE = 0.8 • VCES, RG = 5Ω
Note 3
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V
Notes:
1. Part must be heatsunk for high-temp ICES measurement.
2. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
3. Switching times & energy loses may increase for higher VCE(Clamp), TJ or RG.
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 (IXGH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
TO-268 (IXGT) Outline
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
© 2009 IXYS CORPORATION, All Rights Reserved
Fig. 2. Extended O utput Characteristics
@ 25 ºC
0
30
60
90
120
150
180
210
240
0 2 4 6 8 1012 14161820
V
C E
- Volts
I
C
- Amperes
V
GE
= 17V
7V
9V
11V
13V
15V
Fig. 3. Output Characteristics
@ 125 ºC
0
7
14
21
28
35
42
49
56
11.522.533.544.55
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 1. Output Characteristics
@ 2 5 ºC
0
7
14
21
28
35
42
49
56
11.522.533.544.55
V
C E
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
5V
7V
9V
Fig. 4. Dependence of V
CE(sat)
on
Temperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
C E (sat)
- Normalize
d
I
C
= 28A
I
C
= 14A
V
GE
= 15V
I
C
= 56A
Fig. 5. Collector-to-Emitter Voltage
v s. Gate-to-Emitter voltage
2
3
4
5
6
7
8
6 7 8 9 10 11 12 13 14 15 16 17
V
G E
- Volts
V
C E
- Volts
T
J
= 25ºC
I
C
= 56A
28A
14A
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
45678910
V
G E
- Volts
I
C
- Amperes
T
J
= 125ºC
25ºC
-40ºC
IXGH28N120BD1
IXGT28N120BD1
IXYS reserves the right to change limits, test conditions and dimensions.
IXGH28N120BD1
IXGT28N120BD1
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
0 102030405060708090100
I
C
- Amperes
g
f s
- Siemens
TJ = -40
º
C
25
º
C
125
º
C
Fig. 8. Dependence of Turn-off
Energy Loss on R
G
0
2
4
6
8
10
12
14
16
18
0 10203040 506070 8090100
R
G
- Ohms
E
o f f
- milliJoule
s
IC = 14
A
TJ = 125
º
C
VGE = 15V
VCE = 960V
IC = 28A
IC = 56A
Fig. 9. Dependence of Turn-Off
Energy Loss on I
C
0
1
2
3
4
5
6
7
8
9
10
10 15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
E
o f f
- MilliJoule
s
RG = 5Ω
VGE = 15V
VCE = 960V
TJ = 125
º
C
TJ = 25
º
C
Fig. 10. Dependence of Turn-off
Energy Loss on Temperature
0
1
2
3
4
5
6
7
8
9
10
11
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigr ade
E
o f f
- milliJoule
s
IC
= 56A
RG = 5Ω
VGE = 15V
VCE = 960V
IC = 28A
IC = 14A
Fig. 11. Dependence of Turn-off
Switching Time on R
G
200
400
600
800
1000
1200
1400
0 10203040 50607080 90100
R
G
- Ohms
Switching Time - nanoseconds
IC = 14A
t
d(off)
t
fi
- - - - - -
TJ = 125ºC
VGE = 15V
VCE = 960V
IC = 28A IC
= 56A
Fig. 12. Dependence of Turn-off
Switching Time
on I
C
100
150
200
250
300
350
400
450
10 15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
Switching Time - nanoseconds
t
d(off)
t
fi
- - - - - -
RG = 5Ω
VGE = 15V
VCE = 960V
TJ = 125
º
C
TJ = 25
º
C
© 2009 IXYS CORPORATION, All Rights Reserved
Fig. 17. Maximum Transient Thermal Resistance
0.10
1.00
1 10 100 1000
Pulse Width - milliseconds
R
( t h ) J C
-
ºC /
W
0.50
Fig. 14. Ga te Charge
0
2
4
6
8
10
12
14
16
0 1020 3040 5060 708090100
Q
G
- nanoCoulombs
V
G E
- Volts
V
CE
= 600V
I
C
= 28A
I
G
= 10mA
Fig. 15. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
C E
- Volts
Capacitance - p
F
C
ies
C
oes
C
res
f = 1 MHz
Fig. 13. Dependence of Turn-off
Swi tching Time on Temperature
100
150
200
250
300
350
400
450
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
Switching Time - nanoseconds
I
C
= 14A
t
d(off)
t
fi
- - - - - -
R
G
= 5Ω
V
GE
= 15V
V
CE
= 960V
I
C
= 28A
I
C
= 14A
I
C
= 56A
I
C
= 56A
Fig. 16. Reverse-Bias Safe
Operating Area
0
20
40
60
80
100
120
140
100 300 500 700 900 1100 1300
V
C E
- Volts
I
C
- Amperes
T
J
= 125
º
C
R
G
= 5Ω
dV/dT < 10V/ns
IXGH28N120BD1
IXGT28N120BD1
IXYS reserves the right to change limits, test conditions and dimensions.
IXGH28N120BD1
IXGT28N120BD1
200 600 10000 400 800
90
100
110
120
130
140
150
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
10
04080120160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
°C
-diF/dt
t
s
K/W
0 200 400 600 800 1000
0
40
80
120
0.0
0.4
0.8
1.2
VFR
diF/dt
V
200 600 10000 400 800
0
10
20
30
40
100 1000
0
500
1000
1500
2000
01234
0
5
10
15
20
25
30
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/μs
A
V
nC
A/μsA/μs
trr
ns
tfr
ZthJC
A/μs
μs
DSEP 8-12A
IF= 20A
IF= 10A
IF= 5A
TVJ= 100°C
VR = 600V TVJ= 100°C
IF = 10A
Fig. 20. Peak reverse current IRM
versus -diF/dt
Fig. 19. Reverse recovery charge Qr
versus -diF/dt
Fig. 18. Forward current IF versus VF
TVJ= 100°C
VR = 600V
TVJ= 100°C
VR = 600V
IF= 20A
IF= 10A
IF= 5A
Qr
IRM
Fig. 21. Dynamic parameters Qr, IRM
versus TVJ
Fig. 22. Recovery time trr versus -diF/dt Fig. 23. Peak forward voltage VFR and
tfr versus diF/dt
IF= 20A
IF= 10A
IF= 5A
tfr VFR
Fig. 24. Transient thermal resistance junction to case
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 1.449 0.0052
2 0.558 0.0003
3 0.493 0.017
TVJ= 25°C
TVJ=100°C
TVJ=150°C
IXYS REF: G_28N120B(5Z)4-21-04-A
