2N7002E
Document number: DS30376 Rev. 11 - 2 1 of 5
www.diodes.com March 2012
© Diodes Incorporated
2N7002E
N-CHANNEL ENHAN CEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(ON) max ID max
TA = 25°C
60V 3Ω @ VGS = 10V 300mA
Features and Benefits
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Small Surface Mount Package
• Lead, Halogen and Antimony Free, RoHS Compliant "Green"
Device (Notes 1, 2 and 3)
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Motor control
• Power Management Functions
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (approximate
Ordering Information (Note 4)
Part Number Case Packaging
2N7002E-7-F SOT23 3000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. Product manufactured with Date Code V12 (week 50, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V12 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code P R S T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View
D
GS
Top View
Pin Out Confi
g
uration Equivalent Circuit
Source
Gate
Drain
K = SAT (Shanghai Assembly/ Test site)
C = CAT (Chengdu Assembly/ Test site)
7B= Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
Shanghai A/T Site Chengdu A/T Site
C7B
YM
K7B
YM
2N7002E
Document number: DS30376 Rev. 11 - 2 2 of 5
www.diodes.com March 2012
© Diodes Incorporated
2N7002E
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS ≤ 1.0MΩ V
DGR 60 V
Gate-Source Voltage Continuous
Pulsed VGSS ±20
±40 V
Continuous Drain Current (Note 5) VGS = 10V Steady
State TA = 25°C
TA = 70°C ID 250
200 mA
Continuous Drain Current (Note 6) VGS = 10V Steady
State TA = 25°C
TA = 70°C ID 300
240 mA
Maximum Body Diode Forward Current (Note 6) IS 500 mA
Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM 800 mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) PD 370 mW
(Note 6) 540
Thermal Resistance, Junction to Ambient (Note 5) RθJA 348 °C/W
(Note 6) 241
Thermal Resistance, Junction to Case (Note 6) R
θ
JC 91
Operating and Storage Temperature Range TJ, TSTG -55 to 150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 60 70 ⎯ V VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current @ TC = 25°C
@ TC = 125°C IDSS ⎯ ⎯ 1.0
500 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA
VGS = ±15V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS
(
th
)
1.0 ⎯ 2.5 V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance @ TJ = 25°C RDS (ON) ⎯
⎯ 1.6
2.0 3
4 Ω VGS = 10V, ID = 250mA
VGS = 4.5V, ID = 200mA
On-State Drain Current ID
(
ON
)
0.8 1.0 ⎯ A VGS = 10V, VDS = 7.5V
Forward Transconductance gFS 80 ⎯ ⎯ mS VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss ⎯ 22 50 pF
VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss ⎯ 11 25 pF
Reverse Transfer Capacitance Crss ⎯ 2.0 5.0 pF
Gate resistance R
g
⎯ 120 ⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 4.5V) Q
g
⎯ 223 ⎯ pC
VDS = 10V, ID = 250mA
Gate-Source Charge Q
g
s ⎯ 82 ⎯ pC
Gate-Drain Charge Q
g
d ⎯ 178 ⎯ pC
SWITCHING CHARACTERISTICS (Note 8)
Turn-On Delay Time tD
(
ON
)
⎯ 7.0 20 ns
VDD = 30V, ID = 0.2A,
RL = 150Ω, VGEN = 10V, RGEN = 25Ω
Turn-Off Delay Time tD
(
OFF
)
⎯ 11 20 ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2N7002E
Document number: DS30376 Rev. 11 - 2 3 of 5
www.diodes.com March 2012
© Diodes Incorporated
2N7002E
0
0.2
0.4
0.6
0.8
1.0
01 2345
I, D
AIN-S
E
EN
(A)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
0
V , GA T E TO SOURCE VOLTAGE (V)
Fig. 2 Drain Current vs. Gate-Source Voltage
GS
0.4
0.8
1.2
1.6
2.0
01234 567
I, D
AI
E
(A)
D
T = -55°C
A
T = 125°C
A
T = 25°C
A
0
1
2
3
4
5
0246810
V , GATE TO SOURCE VOLTAGE (V)
Fig. 3 On Resistance vs. Gate-Source Voltage
GS
I = 75mA
D
I = 250mA
D
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0
1
2
3
4
5
00.2 0.4 0.6 0.8 1.0
I , DRAIN CURRENT (A)
Fig . 4 On Re sista nce vs. D r ain Curr ent
D
V = 4.5V
GS
V = 10V
GS
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
0
T , JUNCTION TEMPERATURE (°C)
Fig . 5 On-Re si st ance vs. Ju nction Tem perat ur e
J
1
2
3
4
5
-75 -50 -25 0 25 50 75 100 125 150
V = 10V @ 250mA
GS
V = 4.5V @ 200mA
GS
, D
AIN-S
E
N-
ESIS
AN
E ( )
DS(ON)
Ω
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fig. 6 Max Power Dissipation vs. Ambient Temperature
A
150
200
250
300
350
0
2N7002E
Document number: DS30376 Rev. 11 - 2 4 of 5
www.diodes.com March 2012
© Diodes Incorporated
2N7002E
Package Outline Dimensions
Suggested Pad Layout
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
XE
Y
C
Z
A
M
JL
D
F
BC
H
K
G
K1
2N7002E
Document number: DS30376 Rev. 11 - 2 5 of 5
www.diodes.com March 2012
© Diodes Incorporated
2N7002E
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Cus tomer or user of this document or prod ucts described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign p atents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the e xpress
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com