©2004 Fairchild Semiconductor Corporation RURP1560 Rev. C
RURP1560
15A, 400V - 600V Ultr afast Diode
The RURP1560 is an ultrafast diode (trr < 55ns) with soft
recovery characteristics. It has a low forward voltage drop
and is of planar, silicon nitride passivated, ion-implanted,
epitaxial construction.
This device is intended for use as an energy
steering /clampin g d iode an d recti fier in a v ariety o f switching
power supplies and other power switching applications. Its
low stored charge and ultrafast recovery with soft recovery
characteristics minimizes ringing and electrical noise in
many power switching circuits, thus reducing power loss in
the switching transistor.
Formerly developmental type TA09905.
Symbol
Features
• Ultrafast with Soft Recovery. . . . . . . . . . . . . . . . . . <55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175oC
• Reverse Voltage Up to . . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supply
• Pow er Switc hin g Circu its
• General Purpose
Packaging
JEDEC TO-220AC
Ordering Information
PART NUMBER PACKAGE BRAND
RURP1560 TO-220AC RURP1560
NOTE: When ordering, use the entire part number
K
A
CATHODE
(FLANGE)
CATHODE
ANODE
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RURP1560 UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRRM 600 V
Wor king Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM 600 V
DC Bl o cki n g Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V R600 V
Average Rectified Forward Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
(TC = 145oC) 15 A
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFRM
(Square Wave 20kHz) 30 A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFSM
(Halfwave 1 Phase 60Hz) 200 A
Max imu m Powe r Dissi p a t io n. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD100 W
Avalanche Energy (See Figures 7 and 8). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAVL 20 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ-55 to 175 oC
Data Sheet August 2004
©2004 Fairchild Semiconductor Corporation RURP1560 Rev. C
Electr ical Spec if icatio ns TC = 25oC, Unless Otherwise Specified
SYMBOL TEST CONDITION
RURP1560
UNITSMIN TYP MAX
VFIF = 15A - - 1.5 V
IF = 15A, TC = 150oC--1.2V
IRVR = 600V - - 100 µA
VR = 600V, TC = 150oC - - 500 µA
trr IF = 1A, dIF/dt = 100A/µs--55ns
IF = 15A, dIF/dt = 100A/µs--60ns
taIF = 15A, dIF/dt = 100A/µs-30-ns
tbIF = 15A, dIF/dt = 100A/µs-20-ns
RθJC --1.5oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reve rse recovery ti me at dIF/dt = 100A/µs (See Figure 6), summation of ta + tb.
ta = Time to reach peak reverse current at dIF/dt = 100A/µs (See Figure 6).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6).
RθJC = Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORW ARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE V OLTAGE
80
10
10
IF, FORWARD CURRENT (A)
VF, FORWARD VOLTAGE (V)
0.51.01.52.0
175oC
100oC
25oC
500
100
10
1.0
0.01
0.0010
IR, REVERSE CURRENT (µA)
100 200 300 400 500
VR, REVERSE VOLTAGE (V)
600
0.1
175oC
100oC
25oC
RURP1560
©2004 Fairchild Semiconductor Corporation RURP1560 Rev. C
FIGURE 3. trr, t a AND tb CURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE
Typical Performance Curves (Continue d)
60
50
40
30
20
10
01
t, TIME (ns)
IF, FORWARD CURRENT (A)
trr
ta
tb
10 20
16
14
12
10
4
2
0
120 130 140 150 160 170 180
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
8
6
SQ. WAVE
DC
Test Circuits and Waveforms
FIGURE 5. trr TEST CIRCUIT FIGURE 6. trr WAVEFORMS AND DEFINITIONS
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IFtrr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE +
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
I = 1A
L = 40mH
IV
t0t1t2
IL
VAVL
t
IL
RURP1560
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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