SILICON TRANSISTOR
2SC1623
FEATURES
• High DC Current Gain: hFE = 200 TYP.
(VCE = 6.0 V, IC = 1.0 mA)
• High Voltage: VCEO = 50 V
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Current (TA = 25 ˚C)
Collector to Base Voltage VCBO 60 V
Collector to Emitter Voltage VCEO 50 V
Emitter to Base Voltage VEBO 5.0 V
Collector Current (DC) IC100 mA
Maximum Power Dissipation
Total Power Dissipation
at 25 ˚C Ambient Temperature PT200 mW
Maximum Temperatures
Junction Temperature Tj150 ˚C
Storage Temperature Range Tstg –55 to +150 ˚C
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
PACKAGE DIMENSIONS
in millimeters
©1984
DATA SHEET
1.5
2.8 ± 0.2
0.65+0.1
–0.15
0.4+0.1
–0.05
2
13
0.4+0.1
–0.05
0.95 0.95
2.9 ± 0.2
0.3
1.1 to 1.4
0 to 0.1
0.16+0.1
–0.06
Marking
1: Emitter
2: Base
3: Collector
Document No. TC-1481C
(O.D. No. TC-5172C)
Date Published July 1995 P
Printed in Japan
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current I CBO 0.1
µ
A VCB = 60 V, IE = 0
Emitter Cutoff Current IEBO 0.1
µ
A VEB = 5.0 V, IC = 0
DC Current Gain hFE 90 200 600 VCE = 6.0 V, IC = 1.0 mA*
Collector Saturation Voltage VCE(sat) 0.15 0.3 V IC = 100 mA, IB = 10 mA*
Base to Saturation Voltage VBE(sat) 0.86 1.0 V IC = 100 mA, IB = 10 mA*
Base Emitter Voltage VBE 0.55 0.62 0.65 V VCE = 6.0 V, IC = 1.0 mA*
Gain Bandwidth Product fT250 MHz VCE = 6.0 V, IE = –10 mA
Output Capacitance Cob 3.0 pF VCB = 6.0 V, IE = 0, f = 1.0 MHz
* Pulsed: PW ≤ 350
µ
s, Duty Cycle ≤ 2 %
hFE Classification
Marking L4 L5 L6 L7
hFE 90 to 180 135 to 270 200 to 400 300 to 600
2SC1623
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
Free air
200
180
160
140
120
100
80
60
40
20
0–20 0 20 40 60 80 100 120 140 160 180
TA - Ambient Temperature - ˚C
PT - Total Power Dissipation - mW
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE 10000
5000
2000
1000
500
200
100
50
20
10
5
2
10 20 40 60 80 100 120 140 160
TA - Ambient Temperature - ˚C
NORMALIZED COLLECTOR CUTOFF
CURRENT vs. AMBIENT TEMPERATURE
- Normalized Collector Cutottt Current
ICBO (TA)
ICBO (TA = 25 ˚C)
100
80
60
40
20
0
IC - Collector Current - mA
VCE - Collector to Emitter Voltage - V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0 0.4 0.8 1.2 1.6 2.0
1.0
0.9
0.8
0.7
0.3
0.2
IB = 0.1 mA
0.6
0.5
0.4
45
40
30
20
25
15
10
10
8
6
4
2
00 1020304050
0
IC - Collector Current - mA
VCE - Collector to Emitter Voltage - V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
hFE - DC Current Gain
IC - Collector Current - mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
hFE - DC Current Gain
IC - Collector Current - mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 6.0 V
Pulsed
–25 ˚C
25 ˚C
TA = 75 ˚C
0
I
B
= 5.0 A
35
VCE = 6.0 V
1.0 V
0.5 V
0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
1000
500
300
100
50
30
10
5
3
0.1
1000
500
300
100
50
30
10
5
3
µ
3
2SC1623
V
CE
= 6.0 V
Pulsed
100
50
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
BE
- Base to Emitter Voltage - V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
I
C
- Collector Current - mA
T
A
= 75 ˚C
25 ˚C
–25 ˚C
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
2 V
1 V
10000
2000
6 V
V
CE
=10 V
5000
1000
200
500
100
20
50
10
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50 –100
f
T
- Gain Bandwidth Product - MHz
I
E
- Emitter Current - mA
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
I
C
= 50 · I
B
20
10
I
C
= 50 · I
B
20
10
0.1 0.2 10.5 2 5 10 20 50 100
I
C
- Collector Current - mA
COLLECTOR AND BASE SATURATION
VOLTAGE vs. COLLECTOR CURRENT
V
BE(sat)
- Base Saturation Voltage - V
V
CE(cat)
- Collector Saturation Voltage - V
V
CB
- Collector to Base Voltage - V
V
EB
- Emittor to Base Voltage - V
INPUT AND OUTPUT CAPACITANCE
vs. REVERSE VOLTAGE
C
ib
- Input Capacitance - pF
C
ob
- Output Capacitance - pF
f = 1.0 MHz
C
ib
(I
C
= 0)
C
ob
(I
E
= 0)
100
20
50
10
2
5
1
0.2
0.5
0.1
0.1 0.2 0.5 1 2 5 10 20 50 100
1000
800
600
400
200
0
h
fe
- Small Signal Current Gain
h
FE
- DC Current Gain
SMALL SIGNAL CURRENT GAIN vs.
DC CURRENT GAIN
0 200 400 600 800 1000
V
CE
= 6.0 V
I
C
= 1.0 mA
f = 1.0 kHz
h
ie
- Input Impedance - kΩ
h
fe
- Small Signal Current Gain
INPUT IMPEDANCE VOLTAGE FEEDBACK
RATIO AND OUTPUT ADMITTANCE vs.
SMALL SIGNAL CURRENT GAIN
50
40
30
20
10
0
200 400 600 800 1000
V
CE
= 6.0 V
I
C
= 1.0 mA
f = 1.0 kHz
h
re
- Voltage Feedback Ratio - ×10
–4
50
40
30
20
10
0
h
oe
- Output Admittance - S
100
80
60
40
20
0
h
oe
h
re
h
ie
V
BE(sat)
V
CE(sat)
Pulsed
µ
2SC1623
4
IC - Collector Current - mA
NORMALIZED h-PARAMETER vs.
COLLECTOR CURRENT
He - Normalized h - Parameter
hie
hre
hfe
hoe
hie
hre
hfe
hoe
VCE = 6.0 V
f = 1.0 kHz
he(IC)
he(IC = 1.0 mA)
He =
10
2
5
1
0.2
0.5
0.1 0.1 0.2 0.5 1 2 5 10
ICE = 1.0 V
f = 1.0 kHz
he(VCE)
he(VCE = 6 V)
He =
3
2
1
0
VCE - Collector to Emitter Voltage - V
NORMALIZED h-PARAMETER vs.
COLLECTOR TO EMITTER VOLTAGE
He - Normalized h - Parameter
10 20 30
hoe
hre
hfe hie
hfe hie
hre
hoe
5
2SC1623
[MEMO]
2SC1623
[MEMO]
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M4 94.11
