1
2SC3318 FUJI POWER TRANSISTOR
TRIPLE DIFFUSED PLANER TYPE
HIGH VOLTAGE,HIGH SPEED SWITCHING
Features
High voltage,High speed switching
High reliability
Applications
Switching regulators
Ultrasonic generators
High frequency inverters
General purpose power amplifiers
Thermal characteristics
Item Symbol Test Conditions Min. Typ. Max. Units
Rth(j-c) Junction to case 1.55 °C/W
V
V
V
V
A
A
W
°C
°C
Item Symbol Ratings Unit
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
-65 to +150
Electrical characteristics (Tc =25°C unless otherwise specified)
Min. Typ. Max. Units
V
V
V
V
mA
mA
V
V
µs
µs
µs
Symbol
VCBO
VCEO
VCEO(SUS)
VEBO
ICBO
IEBO
hFE
VCE(Sat)
VBE(Sat)
ton
tstg
tf
Test Conditions
ICBO = 1mA
ICEO = 10mA
IC = 0.2A
IEBO = 1mA
VCBO = 500V
VEBO = 7V
IC = 5A, VCE = 5V
IC = 5A, IB = 1A
IC = 5A, IB1 = 1A
IB2 = -2A, RL = 30 ohm
Pw = 20 µs Duty=<2%
500
400
400 -
7-
- 1.0
- 1.0
10 1.0
1.5
0.5
1.5
0.15
Outline Drawings
TO-3P
JEDEC -
EIAJ SC-65
500
400
400
7
10
3
80
+150
Collector-Base voltage VCBO
Collector-Emitter voltage VCEO
Collector-Emitter voltage VCEO(SUS)
Emitter-Base voltage VEBO
Collector current IC
Base current IB
Collector power disspation PC
Operating junction temperature Tj
Storage temperature Tstg
Item
Collector-Base voltage
Collector-Emitter voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Base leakage current
Emitter-Base leakage current
D.C. current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
*1
Switching time
Thermal resistance
2
Characteristics
2SC3318 FUJI POWER TRANSISTOR
Base current IB[A]
Collector Output Characteristics
Collector-Emitter voltage VCE[V]
DC Current Gain
Collector current IC[A]
D.C. current gain hFE
Base and Collector Saturation Voltage
Collector current IC[A]
Saturation voltage VCE(sat), VBE(sat)[V]
Safe Operating Area
Collector-Emitter voltage VCE[V]
Collector current IC[A]
Switching Time
Collector current IC[A]
Switching time ton, tstg, tf [µs]
*1 Switching Time Test Circuit
