3PS2011G 11/10/08
PI74FCT244T/2244T
PI74FCT541T/2541T
Fast CMOS Non-Inverting Octal Buffer/Line Drivers
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Note:
Stresses greater than those listed under MAX I MUM
RATINGS may cause permanent damage to the
device. This is a stress rating only and functional
op er a tion of the device at these or any other con-
di tions above those indicated in the operational
sections of this specifi cation is not implied. Exposure to
absolute maximum rating conditions for extended periods
may affect re li abil i ty.
DC Electrical Characteristics (Over the Operating Range, TA = –40°C to +85°C, VCC = 5.0V ± 5%)
Parameters De scrip tion Test Conditions(1) Min. Typ(2) Max. Units
VOH Output HIGH Voltage VCC = Min., VIN = VIH or VIL IOH = –15.0mA 2.4 3.0
V
VOL Output LOW Current VCC = Min., VIN = VIH or VIL IOL = 64mA 0.3 0.55
VOL Output LOW Current VCC = Min., VIN = VIH or VIL IOL = 12mA
(25Series) 0.3 0.50
VIH Input HIGH Voltage Guaranteed Logic HIGH Level 2.0
VIL Input LOW Voltage Guaranteed Logic LOW Level 0.8
IIH Input HIGH Current VCC = Max. VIN = VCC 1
A
IIL Input LOW Current VCC = Max. VIN = GND –1
IOZH High Impedance VCC = MAX.VOUT = 2.7V 1
IOZL Output Current VOUT = 0.5V –1
VIK Clamp Diode Voltage VCC = Min., IIN = –18mA –0.7 –1.2 V
IOFF Power Down Disable VCC = GND, VOUT = 4.5V 100 A
IOS Short Circuit Current VCC = Max.(3), VOUT = GND –60 –120 mA
VHInput Hysteresis 200
Notes:
1. For Max. or Min. conditions, use appropriate value specifi ed under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5.0V, +25°C ambient and maximum loading.
3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
Capacitance (TA = 25°C, f = 1 MHz)
Parameters(1) De scrip tion Test Conditions Typ. Max. Units
CIN Input Capacitance VIN = 0V 6 10 pF
COUT Output Capacitance VOUT = 0V 8 12
Notes:
1. This parameter is determined by device characterization but is not production tested.
Storage Temperature ............................................................. –65°C to +150°C
Ambient Temperature with Power Applied .............................-40°C to +85°C
Supply Voltage to Ground Potential (Inputs & Vcc Only) ...... –0.5V to +7.0V
Supply Voltage to Ground Potential (Outputs & D/O Only) ... –0.5V to +7.0V
DC Input Voltage ..................................................................... –0.5V to +7.0V
DC Output Current ................................................................................ 120mA
Power Dissipation .................................................................................... 0.5W