Product Datasheet Search Results:
- 3SK228
- Hitachi Semiconductor
- Silicon NPN Triple Diffused
Product Details Search Results:
Renesas.com/3SK222-A
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"21 dB","Drain Current-Max (ID)":"0.0250 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","T...
1496 Bytes - 07:20:34, 25 October 2024
Renesas.com/3SK222-V21-A
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"21 dB","Drain Current-Max (ID)":"0.0250 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"AMPLI...
1490 Bytes - 07:20:34, 25 October 2024
Renesas.com/3SK222-V22-A
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"21 dB","Drain Current-Max (ID)":"0.0250 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"AMPLI...
1489 Bytes - 07:20:34, 25 October 2024
Renesas.com/3SK222-VBA-A
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"21 dB","Drain Current-Max (ID)":"0.0250 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"AMPLI...
1491 Bytes - 07:20:34, 25 October 2024
Renesas.com/3SK222-VBB-A
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"21 dB","Drain Current-Max (ID)":"0.0250 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"AMPLI...
1491 Bytes - 07:20:34, 25 October 2024
Renesas.com/3SK223-A
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"17 dB","Drain Current-Max (ID)":"0.0250 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"AMPLI...
1517 Bytes - 07:20:34, 25 October 2024
Renesas.com/3SK223-U90-A
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"17 dB","Drain Current-Max (ID)":"0.0250 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"AMPLI...
1539 Bytes - 07:20:34, 25 October 2024
Renesas.com/3SK223-U91-A
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"17 dB","Drain Current-Max (ID)":"0.0250 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"AMPLI...
1539 Bytes - 07:20:34, 25 October 2024
Renesas.com/3SK223-UIA-A
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"17 dB","Drain Current-Max (ID)":"0.0250 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"AMPLI...
1541 Bytes - 07:20:34, 25 October 2024
Renesas.com/3SK223-UIO-A
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"17 dB","Drain Current-Max (ID)":"0.0250 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"AMPLI...
1541 Bytes - 07:20:34, 25 October 2024
Renesas.com/3SK224-A
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"15 dB","Drain Current-Max (ID)":"0.0250 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"AMPLI...
1515 Bytes - 07:20:34, 25 October 2024
Renesas.com/3SK224-U94-A
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"15 dB","Drain Current-Max (ID)":"0.0250 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"AMPLI...
1537 Bytes - 07:20:34, 25 October 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
3SK2511-2FA10.pdf | 13.76 | 1 | Request | |
3SK2942-2AA10.pdf | 13.76 | 1 | Request | |
3SK2941-2AA10.pdf | 13.76 | 1 | Request | |
3SK2611-3AA00.pdf | 13.76 | 1 | Request | |
3SK2511-1FA10.pdf | 13.76 | 1 | Request | |
3SK2112-1AA10.pdf | 13.76 | 1 | Request | |
3SK2112-2AA10.pdf | 13.76 | 1 | Request | |
3SK2122-2AA10.pdf | 13.76 | 1 | Request | |
3SK2122-1AA10.pdf | 13.76 | 1 | Request | |
CA3SK20JD.pdf | 2.75 | 1 | Request | |
CA3SK20BD.pdf | 2.75 | 1 | Request |