1. Product profile
1.1 General description
The BLM7G22S-60PB(G) is a dual path, 2-stage power MMIC using Ampleon’s state of
the art GEN7 LDMOS technology. This device is perfectly suited as general purpose
driver in the frequency range from 2100 MHz to 2400 MHz. Available in gull wing or flat
lead outline.
1.2 Features and benefits
Integrated temperature compensated bias
Biasing of individual stages is externally accessible
Integrated current sense
Integrated ESD protection
Excellent thermal stability
High power gain
On-chip matching for ease of use (input matched to 50 ; output partially matched)
Designed for broadband operation (frequency 2100 MHz to 2400 MHz)
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
RF power MMIC for W-CDMA base stations in the 2100 MHz to 2400 MHz frequency
range.
BLM7G22S-60PB;
BLM7G22S-60PBG
LDMOS 2-stage power MMIC
Rev. 5 — 1 September 2015 Product data sheet
Table 1. Application performance
Typical RF performance at Tcase = 25
C; IDq1 = 75 mA ; IDq2 = 233 mA.
Test signal: 3GPP test model 1; 64 DPCH; clipping at 46 %; PAR = 8.4 dB at 0.01% probab ility on
CCDF per carrier; carrier spacing = 5 MHz; per section unless otherwise specified in a class-AB
production circuit.
Test signal f VDS PL(AV) GpDACPR
(MHz) (V) (W) (dB) (%) (dBc)
2-carrier W-CDMA 2140 28 1.6 31.5 11.3 43
2-carrier W-CDMA 2350 28 1.6 29.3 10.7 42
BLM7G22S-60PB_7G22S-60PBG#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 1 September 2015 2 of 21
BLM7G22S-60PB(G)
LDMOS 2-stage power MMIC
2. Pinning information
2.1 Pinning
2.2 Pin description
Transparent top view
The exposed backside of the package is the ground terminal of the device.
Fig 1. Pin configuration
aaa-004384
V
DS(A1)
V
DS(B1)
VGSS(A2)
VGSS(B2)
VDSS(A2)
RF_OUT_A / V
DS(A2)
RF_OUT_B / V
DS(B2)
VDSS(B2)
RF_IN_A
RF_IN_B
VGSS(A1)
VGSS(B1)
VDSS(A1)
VDSS(B1)
n.c.
n.c.
pin 1 index
9
8
7
6
5
4
3
2
1
14
13
12
11
10
15
16
Table 2. Pin description
Symbol Pin Description
VDS(A1) 1 drain-source voltage of stage A1
VGSS(A2) 2 gate sense FET and gate source voltage of stage A2
VDSS(A2) 3 drain sense FET source voltage of stage A2
RF_IN_A 4 RF input path A
VGSS(A1) 5 gate sense FET and gate source voltage of stage A1
VDSS(A1) 6 drain sense FET source voltage of stage A1
n.c. 7 not connected
n.c. 8 not connected
VDSS(B1) 9 drain sense FET source voltage of stage B1
VGSS(B1) 10 gate sense FET and gate source voltage of stage B1
RF_IN_B 11 RF input path of B
VDSS(B2) 12 drain sense FET source voltage of stage B2
VGSS(B2) 13 gate sense FET and gate source voltage of stage B2
VDS(B1) 14 drain-source voltage of stage B1
BLM7G22S-60PB_7G22S-60PBG#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 1 September 2015 3 of 21
BLM7G22S-60PB(G)
LDMOS 2-stage power MMIC
3. Ordering information
4. Block diagram
5. Limiting values
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
RF_OUT_B/VDS(B2) 15 RF output path B / drain source voltage of stage B2
RF_OUT_A/VDS(A2) 16 RF output path A / drain source voltage of stage A2
GND flange RF ground
Table 2. Pin description …continued
Symbol Pin Description
Table 3. Ordering information
Type number Package
Name Description Version
BLM7G22S-60PB HSOP16F plastic, heatsink small outline package; 16 leads (flat) SOT1211-2
BLM7G22S-60PBG HSOP16 plastic, heatsink small outline package; 16 leads SOT1212-2
Fig 2. Block diagram of BLM7G22-60PBG
aaa-004385
V
DS(A1)
V
DS(B1)
V
GSS(A2)
V
GSS(B2)
V
DSS(A2)
RF_OUT_A / V
DS(A2)
RF_OUT_B / V
DS(B2)
V
DSS(B2)
RF_IN_A
RF_IN_B
TEMPERATURE
COMPENSATED BIAS
V
GSS(A1)
V
GSS(B1)
V
DSS(A1)
V
DSS(B1)
TEMPERATURE
COMPENSATED BIAS
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V
VGS(sense) sense gate-source voltage 0.5 +9 V
Tstg storage temperature 65 +150 C
Tjjunction temperature [1] -225C
Tcase case temperature - 150 C
BLM7G22S-60PB_7G22S-60PBG#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 1 September 2015 4 of 21
BLM7G22S-60PB(G)
LDMOS 2-stage power MMIC
6. Thermal characteristics
[1] When operated with a CW signal.
7. Characteristics
Table 5. Thermal characteristics
Measured for total device.
Symbol Parameter Conditions Value Unit
Rth(j-c) thermal resistance from
junction to case
final stage; Tcase =90C; PL=3.2W [1] 1.1 K/W
driver stage; Tcase =90C; PL=3.2W [1] 3.2 K/W
Table 6. DC characteristics
Tcase = 25
C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Final stage
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID= 0.422 mA 65 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID=42mA 1.4 1.9 2.4 V
VGSq gate-source quiescent voltage VDS = 28 V; ID= 253 mA 1.7 2.1 2.5 V
IDSS drain leakage current VGS = 0 V; VDS =28V - - 1.4 A
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS = 10 V
-7.8- A
IGSS gate leakage current VGS = 11 V; VDS =0V - - 140 nA
gfs forward transconductance VDS = 10 V; ID= 1478 mA - 2.85 - S
RDS(on) drain-source on-state resistance VGS =V
GS(th) + 3.75 V;
ID=1.48A
-350- m
IDq quiescent drain current main transistor: VDS =28V
sense transistor: ID=7mA;
VDS =28V
208 233 257 mA
Driver stage
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID= 0.116 mA 65 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID=11.6mA 1.4 1.9 2.4 V
VGSq gate-source quiescent voltage VDS = 28 V; ID=69.6mA 1.7 2.1 2.5 V
IDSS drain leakage current VGS = 0 V; VDS =28V - - 1.4 A
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS = 10 V
-2.2- A
IGSS gate leakage current VGS = 11 V; VDS =0V - - 140 nA
gfs forward transconductance VDS = 10 V; ID=406 mA - 0.8 - S
RDS(on) drain-source on-state resistance VGS =V
GS(th) + 3.75 V;
ID=0.4 A
-2350- m
IDq quiescent drain current main transistor: VDS =28V
sense transistor: ID=7mA;
VDS =28V
67 75 83 mA
BLM7G22S-60PB_7G22S-60PBG#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 1 September 2015 5 of 21
BLM7G22S-60PB(G)
LDMOS 2-stage power MMIC
8. Application information
8.1 Circuit information for application circuit (2.1 GHz to 2.2 GHz)
Table 7. RF Characteristics
Typical RF performance at Tcase = 25
C; VDS = 28 V; IDq1 = 75 mA; IDq2 = 233 mA. Test signal:
2-carrier W-CDMA; 3GPP test model 1; 64 DPCH; clipping at 46 %; PAR = 8.4 dB at 0.01%
probability on CCDF per carrier; carrier spacing = 5 MHz; f = 2140 MHz; per section unless
otherwise specified, measured in a class-AB production circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL(AV) = 1.6 W 29.5 31.5 33.5 dB
Ddrain efficiency PL(AV) = 1.6 W 10 11.3 - %
RLin input return loss PL(AV) = 1.6 W - 17 10 dB
ACPR adjacent channel power ratio PL(AV) = 1.6 W - 43 40 dBc
Table 8. List of components
For test circuit see Figure 3.
Component Description Value Remarks
C1, C4, C21, C24, C100, C200, C300, C400 capacitor 10 F
C2, C5, C6, C22, C25, C26 capacitor 1 F
C3, C7, C10, C23, C27, C30 capacitor 8.2 pF [1]
C8, C28 capacitor 1.6 pF [1]
C9, C29 capacitor 0.4 pF [1]
C11, C31 electrolytic capacitor 470 F
C101, C201, C301, C401 capacitor 100 nF
C102, C103, C105, C202, C203, C205,
C302, C303, C305, C402, C403, C405
capacitor 12 pF [2]
C104, C204, C304, C404 capacitor 4.7 F
D100, D200, D300, D400 IC: LM4051 -
P100, P400 potentiometer - do not populate
Q100, Q200, Q300, Q400 IC: LM7341 -
R1, R21 ferrite bead -
R100, R200, R300, R400 resistor 4.7
R101, R108, R208, R308, R401, R408 resistor 0
R102, R402 resistor 360 1% tolerance
R103, R403 resistor 330 1% tolerance
R104, R203, R303, R404 resistor 68 k
R105, R405 resistor 10 k
R106, R205, R305, R406 resistor 820
R107, R206, R306, R407 resistor 47
R109, R209, R309, R409 resistor 300 k
R201, R301 resistor 180 1% tolerance
BLM7G22S-60PB_7G22S-60PBG#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 1 September 2015 6 of 21
BLM7G22S-60PB(G)
LDMOS 2-stage power MMIC
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] American Technical Ceramics type 100A or capacitor of same quality.
R202, R302 resistor 3.6 k1% tolerance
R204, R304 resistor 9.1 k
R207, R307 resistor 1 k
Table 8. List of components …co n tinue d
For test circuit see Figure 3.
Component Description Value Remarks
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xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx
BLM7G22S-60PB_7G22S-60PBG#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 1 September 2015 7 of 21
BLM7G22S-60PB(G)
LDMOS 2-stage power MMIC
Printed-Circuit Board (PCB): Rogers 4350; thickness = 0.762 mm.
See Table 8 for a list of components.
Fig 3. Component layout for class-AB application circuit with auto-bias
aaa-004523
16 15
14
1
VGSS(B2)
VDS(B1)
Vbias(B2)
Vbias(B1)
Vbias(A1)
Vbias(A2) VDS(A1)
R100
R100
P100
P100
R102
R102
R103
R103
R106
R106
C104
C104
R107
R107
C105
C105
R104
R104
R105
R105
R110
R110
Q100
Q100
R109
R109
D100
D100
C102
C102
R101
R101
C101
C101
C100
C100
GND
GND
GND
GND
C1
C1
C2
C2
C3
C3
R1
R1
R21
R21
R308
R308
R208
R208
C205
C205
C103
C103
C203
C203
R108
R108
R206
R206
C204
C204
R205
R205
R204
R204
R207
R207
R203
R203
Q200
Q200
D200
D200
R201
R201
R202
R202
R209
R209
R200
R200
C202
C202
C201
C201
C200
C200
R306
R306
C305
C305
C303
C303
R408
R408
C304
C304
R307
R307
R304
R304
R305
R305
D300
D300
R309
R309
R302
R302
R301
R301
R303
R303
C300
C300
R300
R300
C301
C301
C302
C302
Vds-B2
Vds-B2
GND
GND
GND
GND
GND
GND
C405
C405
C403
C403
R407
R407
R105
R105
R406
R406
R404
R404
R410
R410
C404
C404
D400
D400
Q400
Q400
C402
C402
R409
R409
R401
R401
R400
R400
C401
C401
C400
C400
R402
R402
R403
R403
P400
P400
C21
C21
C22
C22
C5
C5
C11
C11
C9
C9
C10
C10
C31
C31
C30
C30
C29
C29
C24
C24
C27
C27
BLM7G22S-60PBG
BLM7G22S-60PBG
2110-2170 MHz
2110-2170 MHz
RO4350 / 30 mil
RO4350 / 30 mil
V
DSS(B2)
DSS(B2)
V
GSS(B1)
GSS(B1)
V
GSS(A1)
GSS(A1)
V
GSS(A2)
GSS(A2)
V
DSS(A1)
DSS(A1)
V
DSS(B1)
DSS(B1)
V
DSS(A2)
DSS(A2)
Vds-A2
Vds-A2
C4
C4
C6
C6
C7
C7
C8
C8
C28
C28
C26
C26
C25
C25
C23
C23
Q300
Q300
R100 P100
R102
R103
R106
C104
R107
C105
R104
R105
R110
Q100
R109
D100
C102
R101
C101
C100
GND
GND
C1
C2
C3
R1
R21
R308
R208
C205
C103
C203
R108
R206
C204
R205
R204
R207
R203
Q200
D200
R201
R202
R209
R200 C202
C201
C200
R306
C305 C303
R408
C304
R307
R304 R305
D300
R309
R302
R301
R303
C300
R300
C301 C302
Vds-B2
GND
GND
GND
C405
C403
R407
R105
R406
R404
R410
C404
D400
Q400
C402
R409
R401
R400
C401
C400 R402
R403
P400
C21
C22
C5 C11
C9
C10
C31
C30
C29
C24
C27
BLM7G22S-60PBG
2110-2170 MHz
RO4350 / 30 mil
VDSS(B2)
VGSS(B1)
VGSS(A1)
VGSS(A2)
VDSS(A1)
VDSS(B1)
VDSS(A2)
Vds-A2
C4
C6 C7
C8
C28
C26
C25
C23
Q300
BLM7G22S-60PB_7G22S-60PBG#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 1 September 2015 8 of 21
BLM7G22S-60PB(G)
LDMOS 2-stage power MMIC
8.2 Performance curves (2.1 GHz to 2.2 GHz)
Performance curves are measured in a class-AB dedicated application circuit with
auto-bias from 2.1 GHz to 2.2 GHz, see Table 8 and Figure 3.
8.2.1 W-CDMA
Tcase = 25 C; VDS = 28 V; PL(AV) = 1.6 W; IDq1 = 75 mA;
IDq2 = 232 mA; carrier spacing = 5 MHz.
Tcase = 25 C; VDS = 28 V; PL(AV) = 1.6 W; IDq1 = 75 mA;
IDq2 = 232 mA; carrier spacing = 5 MHz.
Fig 4. Power gain and drain efficiency as function of
frequency; typical values
Fig 5. Adjacent channel power ratio as a function of
frequency; typical values
Tcase = 25 C; VDS = 28 V; f = 2140 MHz; IDq1 = 75 mA;
IDq2 = 232 mA; carrier spacing = 5 MHz.
Tcase = 25 C; VDS = 28 V; f = 2140 MHz; IDq1 = 75 mA;
IDq2 = 232 mA; carrier spacing = 5 MHz.
Fig 6. Power gain and drain efficiency as function of
output power; typical values
Fig 7. Adjacent channel power ratio as a function of
output power; typical values
aaa-004511
2050 2100 2150 2200 2250
25 5
27 7
29 9
31 11
33 13
35 15
f (MHz)
Gp
(dB)
ηD
(%)
Gp
ηD
aaa-004512
2050 2100 2150 2200 2250
-50
-48
-46
-44
-42
-40
f (MHz)
ACPR
(dBc)
aaa-004513
0 2 4 6 8 10 12 14
26 0
28 10
30 20
32 30
34 40
PL (W)
Gp
(dB)
ηD
(%)
Gp
ηD
aaa-004514
0 2 4 6 8 10 12 14
-50
-40
-30
-20
-10
0
PL (W)
ACPR
(dBc)
BLM7G22S-60PB_7G22S-60PBG#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 1 September 2015 9 of 21
BLM7G22S-60PB(G)
LDMOS 2-stage power MMIC
8.2.2 1-Tone pulsed CW
VDS = 28 V; f = 2140 MHz; IDq1 = 75 mA; IDq2 = 232 mA;
carrier spacing = 5 MHz.
(1) Tcase = 30 C
(2) Tcase = +25 C
(3) Tcase = +100 C
Fig 8. Quiescent drain current as a function of case
temperature; typical values
Fig 9. Power gain and drain efficiency as function of
output power; typical values
aaa-005989
-40 -20 0 20 40 60 80 100 120
0
50
100
150
200
250
Tcase (°C)
IDqDq
IDq
(mA)(mA)(mA)
IDq1Dq1
IDq1
IDq2Dq2
IDq2
aaa-005990
0 2 4 6 8 10 12
25 0
27 8
29 16
31 24
33 32
35 40
PL (W)
Gp
Gp
(dB)(dB)(dB)
ηD
ηD
(%)(%)(%)
(1)(1)(1)
(1)(1)(1)
(2)
(2)(2) (2)(2)(2)
(3)
(3)(3)
(3)(3)(3)
Gp
GpηD
ηD
Tcase = 25 C; VDS =28 V; P
L(AV) = 1.6 W; f = 2140 MHz;
IDq1 = 75 mA; IDq2 = 232 mA; = 10 %; tp=100s.
(1) VDD = 24 V
(2) VDD = 28 V
(3) VDD = 32 V
VDS = 28 V; PL(AV) = 1.6 W; f = 2140 MHz; IDq1 = 75 mA;
IDq2 = 232 mA; = 10 %; tp= 100 s.
(1) Tcase = 30 C
(2) Tcase = +25 C
(3) Tcase = +100 C
Fig 10. Power gain as a function of output power;
typical values
Fig 11. Power gain as a function of output power;
typical values
aaa-005991
0 5 10 15 20 25 30 35 40
27
28
29
30
31
32
PL (W)
Gp
Gp
(dB)(dB)(dB)
(1)(1)(1)
(2)
(2)(2)
(3)
(3)(3)
aaa-005992
0 5 10 15 20 25 30 35 40
25
27
29
31
33
35
PL (W)
Gp
Gp
(dB)(dB)(dB) (1)(1)(1)
(2)
(2)(2)
(3)
(3)(3)
BLM7G22S-60PB_7G22S-60PBG#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 1 September 2015 10 of 21
BLM7G22S-60PB(G)
LDMOS 2-stage power MMIC
8.2.3 2-Tone CW
Tcase = 25 C; VDS = 28 V; fc = 2140 MHz; IDq1 = 75 mA; IDq2 = 232 mA; tone spacing = 100 kHz.
Fig 12. Intermodulation distortion as a function of peak envelope power load power;
typical values
aaa-005993
10-1 1 10 102
-85
-65
-45
-25
-5
PL(PEP) (W)
IMD
IMDIMD
(dBc)
(dBc)(dBc)
IMD3
IMD3IMD3
IMD5
IMD5IMD5
IMD7
IMD7IMD7
BLM7G22S-60PB_7G22S-60PBG#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 1 September 2015 11 of 21
BLM7G22S-60PB(G)
LDMOS 2-stage power MMIC
8.3 Performance curves (2.3 GHz to 2.4 GHz)
Performance curves are measured in a class-AB dedicated application circuit with
auto-bias from 2.3 GHz to 2.4 GHz.
8.3.1 2-Carrier W-CDMA
VDS = 28 V; IDq1 = 220 mA; IDq2 = 75 mA; carrier
spacing = 5MHz.
(1) f = 2300 MHz
(2) f = 2350 MHz
(3) f = 2400 MHz
VDS = 28 V; IDq1 = 220 mA; IDq2 = 75 mA; carrier
spacing = 5MHz.
(1) f = 2300 MHz
(2) f = 2350 MHz
(3) f = 2400 MHz
Fig 13. Power gain as a function of output power;
typical values
Fig 14. Adjacent channel power ratio as a function of
output power; typical values
aaa-014909
24 28 32 36 40 44 48
28
28.5
29
29.5
30
30.5
31
PL (dBm)
Gp
Gp
(dB)(dB)(dB)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
aaa-014910
24 28.8 33.6 38.4 43.2 48
-50
-44
-38
-32
-26
-20
PL (dBm)
ACPR
ACPRACPR
(dBc)
(dBc)(dBc)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
BLM7G22S-60PB_7G22S-60PBG#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 1 September 2015 12 of 21
BLM7G22S-60PB(G)
LDMOS 2-stage power MMIC
8.3.2 Pulsed CW
VDS = 28 V; IDq1 = 220 mA; IDq2 = 75 mA; carrier spacing = 5MHz.
(1) f = 2300 MHz
(2) f = 2350 MHz
(3) f = 2400 MHz
Fig 15. Drain efficiency as a function of output power; typical values
aaa-014911
28 32 36 40 44 48
5
10
15
20
25
30
35
PL (dBm)
ηD
ηD
(%)(%)(%)
(3)(3)(3)
(2)(2)(2)
(1)(1)(1)
VDS = 28 V; IDq1 = 220 mA; IDq2 = 75 mA; =10%;
tp= 100 s.
(1) f = 2300 MHz
(2) f = 2350 MHz
(3) f = 2400 MHz
VDS = 28 V; IDq1 = 220 mA; IDq2 = 75 mA; =10%;
tp= 100 s.
(1) f = 2300 MHz
(2) f = 2350 MHz
(3) f = 2400 MHz
Fig 16. Power gain as a function of output power;
typical values
Fig 17. Drain efficiency as a function of output power;
typical values
aaa-014912
24 28 32 36 40 44 48
26
27
28
29
30
31
32
PL (dBm)
Gp
Gp
(dB)(dB)(dB)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
aaa-014913
24 28 32 36 40 44 48
0
10
20
30
40
50
60
PL (dBm)
ηD
ηD
(%)(%)(%)
(3)(3)(3)
(2)(2)(2)
(1)(1)(1)
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Product data sheet Rev. 5 — 1 September 2015 13 of 21
BLM7G22S-60PB(G)
LDMOS 2-stage power MMIC
8.4 Application without auto-bias
9. Test information
9.1 Ruggedness
The BLM7G22S-60PB and BLM7G22S-60PBG are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: VDS =28V; I
Dq1 = 75 mA; IDq2 = 233 mA; PL = 27 W (W-CDMA);
f = 2140 MHz.
Connect pins 2 and 3; connect pins 5 and 6; connect pins 9 and 10; connect pins 12 and 13 at
board level. The exposed backside of the package is the ground terminal of the device.
Fig 18. Non auto-bias application
aaa-004386
V
DS(A1)
V
DS(B1)
VGSS(A2)
VGSS(B2)
VDSS(A2)
RF_OUT_A / V
DS(A2)
RF_OUT_B / V
DS(B2)
VDSS(B2)
RF_IN_A
RF_IN_B
VGSS(A1)
VGSS(B1)
VDSS(A1)
VDSS(B1)
n.c.
n.c.
9
8
7
6
5
4
3
2
1
14
13
12
11
10
15
16
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Product data sheet Rev. 5 — 1 September 2015 14 of 21
BLM7G22S-60PB(G)
LDMOS 2-stage power MMIC
9.2 Impedance information
[1] ZS and ZL defined in Figure 19.
Table 9. Typical impedance
Measured load-pull data. Typical values per section unless otherwise specified.
f ZS [1] ZL [1]
(MHz) () ()
BLM7G22S-60PB
2080 58.86 + j21.82 10.54 j3.20
2110 58.70 + j29.76 10.23 j2.72
2140 51.80 + j41.56 9.56 j2.90
2170 47.31 + j44.60 9.10 j2.80
2230 38.35 + j46.53 8.41 j2.05
2300 30.80 + j53.60 6.40 j2.10
2350 23.80 + j48.20 5.70 j2.20
2400 19.10 + j43.20 5.30 j2.40
BLM7G22S-60PBG
2080 55.62 + j18.89 15.89 j2.28
2110 55.61 + j19.04 14.74 j2.59
2140 55.60 + j19.12 13.56 j2.75
2170 55.57 + j19.25 12.38 j2.75
2200 55.53 + j19.39 11.20 j2.61
2230 55.48 + j19.55 10.05 j2.34
2300 34.51 + j41.45 7.06 j6.36
2350 29.26 + j36.91 6.35 j6.24
2400 22.86 + j32.52 5.65 j6.15
Fig 19. Definition of transistor impedance
001aaf059
drain
ZL
ZS
gate
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Product data sheet Rev. 5 — 1 September 2015 15 of 21
BLM7G22S-60PB(G)
LDMOS 2-stage power MMIC
9.3 Performance curves
Performance curves are measured per section.
Tcase = 25 C; VDS = 28 V; PL(AV) = 1.6 W; f = 2140 MHz; IDq1 = 75 mA; IDq2 = 232 mA; =10%;
tp=100s.
Fig 20. One-tone pulsed CW drain efficiency at 1 dB gain compression as function of
output power at 1 dB gain compression; typical values
aaa-005994
40 42 44 46 48 50
0
12
24
36
48
60
PL(1dB) (dBm)
ηD
ηD
(%)(%)(%)
BLM7G22S-60PB_7G22S-60PBG#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 1 September 2015 16 of 21
BLM7G22S-60PB(G)
LDMOS 2-stage power MMIC
10. Package outline
Fig 21. Package outline SOT1211-2 (HSOP16F)
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT1211-2
sot1211-2_po
15-01-12
15-06-09
Unit
mm
max
nom
min
3.9 0.2
0.1
0
5.55
5.50
5.45
0.27
0.22
0.17
20.62
20.57
20.52
19.00
18.95
18.90
1.0 9.55
A
HSOP16F: plastic, heatsink small outline package; 16 leads(flat) SOT1211-2
A1
3.65
3.60
3.55
A2b
0.40
0.35
0.30
b1cD
(1) D1
16.05
16.00
15.95
0.24.072.97
FD2
20.44
20.39
20.34
D3
10.01
9.96
9.91
E(1)
8.18
8.13
8.08
E1
5.89
5.84
5.79
E2
9.83
9.78
9.73
E3
8.45
e3
ee
1
7.45
e2
1.5
e4e5e6
1.62
1.57
1.52
0.250.25
y
16.16
15.96
15.76
0.1
HEQ1vw
scale
detail X
e2
D1
D2
e1
010 mm
D
B
y
Bw
E1
E2
pin 1
index
16
114
15
b1(2x)
Bw
b(14x)
A A2
Q1
A1
A
E
c
HE
D3E3
vA
X
Dimensions (mm are the original dimensions)
e
(2x)
e5
(2x)
e6
(2x)
(12x)
e3
(2x)
e4
(8x) METAL
PROTRUSIONS (SOURCE)
F(16x)
Note
1. Package body dimensions “D and “E do not include mold and metal protrusions. Allowable protrusion is 0.25 mm per side.
2. Lead width dimensions “b and “ b1 do not include dambar protrusions. Allowable dambar protrusion is 0.25 mm in total per lead.
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Product data sheet Rev. 5 — 1 September 2015 17 of 21
BLM7G22S-60PB(G)
LDMOS 2-stage power MMIC
Fig 22. Package outline SOT1212-2 (HSOP16)
D3
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT1212-2
sot1212-2_po
15-01-14
15-06-09
HSOP16: plastic, heatsink small outline package; 16 leads SOT1212-2
detail X
e1
D E
c
HE
E1
114
16 15
E2
(8x) METAL
PROTRUSIONS (SOURCE)
D1
D2
y
B
H
A
vA
X
wB
b
(14x)
wBb1(2x)
(A3)
Q
A2
A1
A
A4
pin 1 index
θ
e2
e4
(12x)
e3(2x)
(2x)
Lp
e
E3
e6
(2x)
e5
(2x)
3°
Unit
mm
max
nom
min
3.9 0.2 0.40 0.27 20.62 19.00
20.39 9.96
A
Dimensions (mm are the original dimensions)
Note
1. Package body dimensions “D'' and `'E'' do not include mold and metal protrusions. Allowable protrusion is 0.25 mm per side.
2. Lead width dimensions `'b'' and `'b1'' do not include dambar protrusions. Allowable dambar protrusion is 0.25 mm in total per lead.
3. Dimension A4 is measured with respect to bottom of the heatsink DATUM H. Positive value means that the bottom of the heatsink is
higher than the bottom of the lead.
A1A2A3A4b
3.65
b1cD
(1) D1D2
16.00 8.13
20.44 10.0116.05 8.18
0.1 0.35 0.22 20.57 18.95 9.553.60 0.35 7.45 1.5
20.34 9.9115.95 8.08
5.84
5.89
5.79
9.78
9.83
9.73
1.0
0 0.30
5.55
5.50
5.45 0.17 20.52 18.903.55
0.06
0
-0.02
8.45
w
0.25
y
0 10 mm
scale
7°
0°
θ
E(1)
D3E1E2E3ee
1
13.2 2.020.95 0.25
2.07
1.97
1.10
0.80
13.5 0.1
12.9
HELpQv
e2e3e4
2.97
e5
4.07
e6
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Product data sheet Rev. 5 — 1 September 2015 18 of 21
BLM7G22S-60PB(G)
LDMOS 2-stage power MMIC
11. Handling information
12. Abbreviations
13. Revision history
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 10. Abbreviations
Acronym Description
3GPP 3rd Generation Partnership Project
CCDF Complementary Cumulative Distribution Function
CW Continuous Waveform
DPCH Dedicated Physical CHannel
ESD ElectroStatic Discharge
FET Field-Effect Transistor
GEN7 Seventh Generation
LDMOS Laterally Diffused Metal Oxide Semiconductor
MMIC Monolithic Microwave Integrated Circuit
MTF Median Time To Failure
PAR Peak-to-Average Ratio
VSWR Voltage Standing Wave Ratio
W-CDMA Wideband Code Division Multiple Access
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLM7G22S-60PB_7G22S-60PBG#5 20150901 Product data sheet BLM7G22S-60PB_
7G22S-60PBG v.4
Modifications: •The format of this document has been redesigned to comply with the new
identity guidelines of Ampleon.
•Legal texts have been adapted to the new company name where
appropriate.
BLM7G22S-60PB_7G22S-60PBG v.4 20150701 Product data sheet - BLM7G22S-60PB_
7G22S-60PBG v.3
BLM7G22S-60PB_7G22S-60PBG v.3 20141016 Product data sheet - BLM7G22S-60PB_
7G22S-60PBG v.2
BLM7G22S-60PB_7G22S-60PBG v.2 20140930 Product data sheet - BLM7G22S-60PB_
7G22S-60PBG v.1
BLM7G22S-60PB_7G22S-60PBG v.1 20121211 Product data sheet - -
BLM7G22S-60PB_7G22S-60PBG#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 1 September 2015 19 of 21
BLM7G22S-60PB(G)
LDMOS 2-stage power MMIC
14. Legal information
14.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
14.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
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Product data sheet Rev. 5 — 1 September 2015 20 of 21
BLM7G22S-60PB(G)
LDMOS 2-stage power MMIC
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
15. Contact information
For more information, please visit:
http://www.ampleon.com
For sales office addresses, please visit:
http://www.ampleon.com/sales
BLM7G22S-60PB(G)
LDMOS 2-stage power MMIC
© Ampleon The Netherlands B.V. 2015. All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLM7G22S-60PB_7G22S-60PBG#5
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
16. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
2.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Application information. . . . . . . . . . . . . . . . . . . 5
8.1 Circuit information for application circuit
(2.1 GHz to 2.2 GHz) . . . . . . . . . . . . . . . . . . . . 5
8.2 Performance curves (2.1 GHz to 2.2 GHz). . . . 8
8.2.1 W-CDMA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
8.2.2 1-Tone pulsed CW . . . . . . . . . . . . . . . . . . . . . . 9
8.2.3 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
8.3 Performance curves (2.3 GHz to 2.4 GHz). . . 11
8.3.1 2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . 11
8.3.2 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
8.4 Application without auto-bias . . . . . . . . . . . . . 13
9 Test information . . . . . . . . . . . . . . . . . . . . . . . . 13
9.1 Ruggedness . . . . . . . . . . . . . . . . . . . . . . . . . . 13
9.2 Impedance information . . . . . . . . . . . . . . . . . . 14
9.3 Performance curves . . . . . . . . . . . . . . . . . . . . 15
10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16
11 Handling information. . . . . . . . . . . . . . . . . . . . 18
12 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 18
13 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 18
14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 19
14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19
14.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
14.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20
15 Contact information. . . . . . . . . . . . . . . . . . . . . 20
16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
