Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM600HD-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
Robotics, Forklifts, Welders
QM600HD-M
• ICCollector current ........................ 600A
• VCEX Collector-emitter voltage ........... 350V
• hFE DC current gain............................. 500
• Non-Insulated Type
94
80 φ5.5
62
48
17
8
2522
1214
20
22
E
B
E
BX
64
M4
M6
27
25
21
5.5
8
B
BX
E
E
C
LABEL
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Feb.1999
Conditions
IC=1A, VEB=2V
VEB=2V
Emitter open
Collector open
DC
DC (forward diode current)
TC=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M6
Mounting screw M5
B(E) terminal screw M4
BX terminal screw M4
Typical value
Ratings
350
350
400
10
600
—
2080
15
—
–40~+150
–40~+125
—
1.96~2.94
20~30
1.47~1.96
15~20
0.98~1.47
10~15
0.98~1.47
10~15
420
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
g
MITSUBISHI TRANSISTOR MODULES
QM600HD-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Limits
Min.
—
—
—
—
—
—
500
—
—
—
—
—
—
Symbol
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
VCE=350V, VEB=2V
VCB=400V, Emitter open
VEB=10V
IC=600A, IB=1.2A
–IC=600A (diode forward voltage)
IC=600A, VCE=2V
VCC=200V, IC=600A, IB1=2A, –IB2=4A
Transistor part
Diode part
Conductive grease applied
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
2.0
800
2.0
2.5
—
—
3.0
15
3.0
0.06
—
0.05
http://store.iiic.cc/
Feb.1999
4
10
3
10
2
10
1
10
2
10
1
10
0
10
1
10
0
10
–1
10
0 0 1 2 3 4 5
1.0A
0.4A
0.2A
0.08A
200
400
600
800
1000
T
j
=25°C
I
B
=2.0A
7
5
4
3
2
7
5
4
3
2
1.2 1.4 1.6 1.8 2.0 2.2
V
CE
=2.0V
T
j
=25°C
0
10
–1
10
–2
10
7
5
4
3
2
7
5
4
3
2
2 3 4 5 7 2 3 4 5 7
4
10
3
10
2
10
1
10
2
10
3
10
V
CE
=2.0V
T
j
=25°C
T
j
=125°C
7
5
4
3
2
7
5
4
3
2
2 3 4 5 7 2 3 4 5 7
1
10
0
10
1
10
2
10
3
10
–1
10
T
j
=25°C
T
j
=125°C
I
B
=1.2A
V
CE(sat)
V
BE(sat)
753275327532
75
32
75
3
2
7
5
32
444
T
j
=25°C
T
j
=125°C
t
f
t
s
t
on
I
B1
=2.0A
V
CC
=200V
–I
B2
=4.0A
753275327532
5
4
3
2
1
0
–2
10
–1
10
4 4 4
T
j
=25°C
T
j
=125°C
I
C
=600A
I
C
=400AI
C
=200A
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT I C (A)
DC CURRENT GAIN h FE
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
BASE CURRENT I B (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE V CE (sat) (V)
SATURATION VOLTAGE V
CE (sat), V BE (sat) (V)
SWITCHING TIME t on, t s, t f (µs)
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
BASE CURRENT IB (A) COLLECTOR CURRENT IC (A)
MITSUBISHI TRANSISTOR MODULES
QM600HD-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
http://store.iiic.cc/
Feb.1999
100
80
60
40
20
0 0 20 60 100 120 16040 80 140
10
30
50
70
90
753275327532
7
5
32
75
3
2
7
5
32TC =25°C
2
10 3
10
1
10
0
10
4
10
3
10
2
10
1
10
4 4 4
1ms
10ms
DC
tw=100µs
0
10
1
10
7
5
4
3
2
0
10
7
5
4
3
3 4 5 7 2 3 4 5 7 1
10
2
2 3
tf
3
VCC=200V
Tj=25°C
Tj=125°C
IB1=2A
IC=600A
ts
2000
1600
1200
0 0 100 200 300 400 500
Tj=125°C
–IB2=4A
6A
1800
1400
1000
800
600
200
400
753275327532
0.08
0
7532 1
10
0
10
0
10
–3
10
–2
10
–1
10
4 4 4
0.07
0.06
0.05
0.04
0.03
0.02
0.01
324
NON–REPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME t s, t f (µs)
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (°C)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
TIME (s)
COLLECTOR CURRENT I C (A)
COLLECTOR CURRENT I C (A)
DERATING FACTOR (%)
MITSUBISHI TRANSISTOR MODULES
QM600HD-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
Z th (j–c) (°C/ W)
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