DSA 30 C 200 PB
advanced
Schottky Diode Gen ²
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
120
IA
V
F
0.94
R1.75 K/W
V
R
=
1 2 3
min.
15
t = 10 ms
Applications:
V
RRM
V
200
0.25
T
VJ
V°C=
T
VJ
°C=mA
2.5
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
=150°C
d =
P
tot
85 WT
C
°C=
T
VJ
175 °C
-55
V
I
RRM
=
=200
15
15
T
VJ
=45°C
DSA 30 C 200 PB
V
A
200
V200
25
25
25
max. repetitive reverse voltage
reverse current
forward voltage
virtual junction temperature
total power dissipation
max. forward surge current
Conditions Unit
1.10
T
VJ
°C=25
C
J
j
unction capacitance V= V;24 T
125
V
F0
V
0.53
T
VJ
=175°C
r
F
10.8 Ω
f = 1 MHz = °C25
m
V
0.78
T
VJ
=°C
I
F
=A
V
15
0.95
I
F
=A30
I
F
=A30
2x
threshold voltage
slope resistance for power loss calculation only
Backside: cathode
(50 Hz), sine
V
F
=0.78
V
● Housing:
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
TO-220
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
RVJ
mA
67 pF
thermal resistance junction to case
thJC
rectangular 0.5
● Very low Vf
● Extremely low switching losses
● low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
FAV
average forward current
FAV
125
IXYS reserves the right to change limits, conditions and dimensions. 20100628
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
DSA 30 C 200 PB
advanced
I
RMS
A
per terminal 35
R
thCH
K/W0.50
M
D
Nm0.6
mounting torque 0.4
T
stg
°C150
storage temperature -55
Weight g2
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
F
C
N60
mounting force with clip 20
Ordering Delivering Mode Base Qty Code Key
Standard Part Name
DSA 30 C 200 PB 507014Tube 50
XXXXXX
YYWW
Logo
Marking on product
DateCode
Assembly Code
abcdef
Product Marking
D
S
A
30
C
200
PB
Part number
Diode
Schottky Diode
low VF
Common Cathode
TO-220AB (3)
=
=
=
1
)
Ma r king on Pr o d uc t
DSA30C200PB
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
1)
I
RMS
is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2) .
In case of (1) and a common cathode/anode configu ration with a non-isolated ba ckside,
the current capability can be increased by connecting the backside.
IXYS reserves the right to change limits, conditions and dimensions. 20100628
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
DSA 30 C 200 PB
advanced
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 2.54 BSC 0.100 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
ØP 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125
3x b2
E
ØP
Q
D
L1
L
3x b 2x e C
A2
H1
A1
A
Outlines TO-220
IXYS reserves the right to change limits, conditions and dimensions. 20100628
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
