20091 http://store.iiic.cc/ 1GTO GCT GCT FG 4000 G X - 90 D A GTO GCT 1 2 x 50 VDRM VRRM 90 x 50 4500V 1 1 70A GTO 2 70A 400V 1600V 14002000V 16002500V 30004500V 6000V 50s 30s 15s20s 6s8s P L M H V U W X Y Z 1 2 GTOGCTX 1000A 2 FT802AV-90800A 2 SR FD CR FT GTO FG GCT GCU 1 2 2009 1 2 http://store.iiic.cc/ 3HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CMIGBT RM 1200IC 1200A x 50 VCES 66 x 50 3300V IGBT TYPE CM 1200 H A - 66 H NO. E964AA1-008 MITSUBISHI ELECTRIC CORPORATION JAPAN Lot No. 2009 1 3 http://store.iiic.cc/ GTO GCT HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HV 2009 1 4 http://store.iiic.cc/ 1 2 3 4 15 3545 75 2 11 23 1 2 3 2009 1 5 http://store.iiic.cc/ 1 2 1 2 3 4 2009 1 6 http://store.iiic.cc/ 1 2 3 4 15 354575 2 1 1 23 UL 94-V0 2009 1 7 http://store.iiic.cc/ HVIGBT CM MOS 1 20V HVIGBT HVIGBT HVIGBT 2 HVIGBT 1 100m 200m 100m 12.5s 2 HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules 2009 1 8 http://store.iiic.cc/ a b 1 20 2 2009 1 9 http://store.iiic.cc/ 1 Rth Rth j - a Rth j - c Rth j - f Rthc - f Ztht Ta Tf Tc Tj Tstg - - Zth j - a Zth j - c Zth j - f 1 1 2 VRRM VRSM VRDC VFM IFRMS IFAV IFSM I2t 1 p I2t = IRRM QRR 0w IFSM2 sin2 w t d t 2009 1 10 http://store.iiic.cc/ 3 VRRM VRSM VRDC VDRM VDSM VDDC dv/dt dv 0.632VD = t dt VTM ITRMS ITAV ITSM I2t VD t 180 p I2t = ITMOV diT/dt IH IL IRRM IDRM PFGM PFGAV 0w ITSM2 sin2 w t d t 60Hz 2009 1 11 http://store.iiic.cc/ IFGM VRGM VFGM IGT VGT VGD PT t gt tq 6V 6V 1 1/ 2 di/dt 10% 90% 90% 10% tq Q RR 4GTO GCT VRRM VRSM VRDC VDRM VDSM VDDC d v/d t dv 0.632VD = dt t VD t 2009 1 12 http://store.iiic.cc/ VTM ITRMS ITAV ITSM I2t 180 1 p I2t = ITMOV diT/d t IH IL IRRM IDRM PFGM PFGAV IFGM IRGM VFGM VRGM IGT VGT VGD PT PRGM PRGAV IRG ITQRM IGQM tgt tgq QGQ 0w ITSM2 sin2 w t d t 1 2009 1 13 http://store.iiic.cc/ Goff Eon Eoff 5IGBT VCES VGES IC IE PC Viso ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG tr td(off) tf VEC trr FWDi td(on) 0V 10 1090 90 90 9010 FWDi FWDi IE trr 0 t Irr 0.5Irr 0 Qrr FWDi 10 2009 1 14 http://store.iiic.cc/ SI SI SI SI SI 1Nm 1.01972x10 kgfcm 1N 1.01972x10-1 kgf 1K/W 1/W 2009 1 15 http://store.iiic.cc/ 1 O-A-B-C C-D D-E E-F 40 O - A - B - C - D 10 100FIT1FIT = 109/ O A 250 B 1000 C 2000 3000 D X E F 1 2 1 2 1000 2 1 a m 0.3 0.6 1000 2 1 b 2 0.1% di/dt FIT 100FIT (a) (b) 1 2009 1 16 http://store.iiic.cc/ 50 80% 70 80% 3 3-1 3 2009 1 17 http://store.iiic.cc/ 3 2009 1 18 http://store.iiic.cc/ 3-2 3-7 3-3 4 4-1 3-4 1 JIS 3-5 4-2 GTO GCT FG4000BX-90DA 2 3 4-3 IGBT IGBT CM1200HA-34H 56 3-6 2 3 2009 1 19 http://store.iiic.cc/ 1 A-4 A-6 A-7 A-10 A-11 100 ; 15, 0 ; 15, 5 JIS C 7021 A-3 Tstgmax; 30, Tstgmin; 30, 5 B-10 B-12 B-18 B-20 100500G, 3 1055Hz, 1.5mm, X Y Z 2 , 30 Ta = Tstgmax, 1000 Ta = Tstgmin, 500 IT = ITAVmax, Tj = 50Tmax j , 5000 TjTmax j , VAK = VDRM, VRRM80%, 1000 JIS C 7021 2FG4000BX-90DA JIS C 7021 A-3 A-4 A-6 A-7 A-10 100 ; 15, 0 ; 15, 30 10 0 - 4025150, 50 He 1 x 10-8cc/sec 500G, XY Z 3 1055Hz, 1.5mm, XYZ 2 10 40 0 0 40 10 0 0 10 0 10 0 A-11 : 45N, 30 , B-10 Ta = 150, 1000 10 0 B-12 B-18 10 10 0 0 B-20 Ta = - 40, 1000 ITAV= 1000A, Tj = 40125, 20000 DC , VGK = - 2V, 1000 Tj = 125, VD = 3600V Tj = 125, VGK = - 19V , 1000 10 10 0 0 3FG4000BX-90DA VTM IGT VGT IRG IDRM U.S.L Tj = 125, ITM = 3000A, IG = 3A 3.8 3.2 1.5 100 150 Tj = 25, VD = 24V, RL = 0.1 Tj = 125, VRG = 19V Tj = 125, VDRM = 4500V, VRG = - 2V - - - - - U.S.L x 1.1 U.S.L x 1.1 U.S.L x 1.2 U.S.L x 1.5 U.S.L x 1.5 V A V mA mA U.S.L. 2009 1 20 http://store.iiic.cc/ EIAJ ED-4701 A-131 2305 B-141 1005055 B-131 Tstg max 60Tstg min 605 A-124 753 A-121 B A-111 30 A-112 B-111 Ta = Tstg max1000 B-112 Ta = Tstg min1000 B-121 B D-403 Tj = 50Tjmax5000 D-313 Ta = Tstg maxVCB = VCBOmax851000 B-20 Ta = TjmaxTstg maxVAK = VDRMVRRM801000 10500Hz10G6 Ta=60RH = 901000 EIAJ ED-4701 CM1200HA-66H EIAJ ED-4701 B-141 0100 (10)5 5 0 B-131 -40 (60)125 (60)100 5 0 A-121 10500Hz10G6 5 0 5 0 (M6) 30kgcm A-112 B-111 Ta = 1251000 5 0 B-112 Ta = -401000 5 0 B-121 Ta = 60RH = 901000 5 0 D-403 Tj = 50 1505000 5 0 D-313 Ta = 125VCES = 2800V1000 5 0 (M6) 30kgcm CM1200HA-66H ICES VCE = 3300VVGE = 0V - U.S.Lx2.0 IGES VGE = 20VVCE = 0V - U.S.Lx2.0 VGE(th) IC = 120mAVCE = 10V L.S.L.x0.8 U.S.Lx1.2 VCE(sat) IC =1200AVGE = 15V - U.S.Lx1.2 VEC IE = 1200A AC6000V 1 U.S.Lx1.2 - U.S.L. L.S.L. 2009 1 21 http://store.iiic.cc/ 5 4 4 6 X NO GO GO 4 4 X X 2009 1 22 http://store.iiic.cc/ 7 2009 1 23 http://store.iiic.cc/ 1 2 2-1 -Rthf - a 0.035/W5m/S 1 V A 2-2 W 2-3 /W 2-1 - 0.08 1 0.07 - -- 0.06 C/W 1 P W Rth j - c 0.05 0.04 0.03 0.02 Rth j - f 0.01 T j - Ta = PRth j - c+ Rthc - f+ Rthf - a 0 T j 0 1 2 Ta 2-2 P W Rthj - c /W C/W /W Rthf - a Tj Rthj - c Tc Rthj - f Rthc - f Tf 9 10 3m/s 0.04 5m/s 7m/s 0.03 0.02 0.01 0 0 10 Rthf - a 2-3 Ta 8 0.05 Rthc - f/W 3 4 5 6 7 m/s 20 30 40 50 8 10 - 50 1 40 Pa - - a max T - 30 20 10 0 0 2 4 6 m/s 2009 1 24 http://store.iiic.cc/ 3 1 2 10m 50m 33m 2 3 2 ALCAN UNIVERSAL JOINTING-COMPOUND ALCAN A BC 3m BC10m A-B 50m C-D 50m B C D 3 2009 1 25 http://store.iiic.cc/ GTO GTOnpnTr1 GTO b pnp Tr2 1 12 GTO IGQ Tr1 IB 1GTO Tr1 IRB IB = 2IA - IGQ IK IRB =1 - 1 GTOpnpn 4 GTO IA = IK + IGQ GTO GTO IB IRB IGQ IA/1 IGQ =1 + 2 - 1 P GTO Tr1 J3 GTO GTO 1 2 1 2 G K Ik IGQ n p J3 Tr1 J2 n n n Tr2 n n n n n J1 p p IA n a p K Tr1 Ik G IB IGQ 2IA 2 A 1 2. GTO 1Ik Tr2 IA A b 2 1GTO 2009 1 26 http://store.iiic.cc/ GTO 2GTO GTO 1 GTO 2 1 GTO 2 GTO 3 4 G K K G J3 nE J3 nE n+ nE PB J2 nB J1 nE PB J2 nB n+ P E n+ P E n + P E n + P E n + J1 PE n+ PE n+ PE n+ PE n+ A A GTO 3 GTO 4 GTO J1 n+ 1 GTO J3 GTO 15V GTO 2009 1 27 http://store.iiic.cc/ GTO 3GTO 5GTO 0.9VD 0.9IT dv/dt ITM VD 0.1VD VDM IT VD VDSP 0 td ts tgt tgq tGW IGM 0.9IGM 0 IG 0.1IGM VRB 0.1IGQM diG/dt tw IGQM diGQ/dt VRG 0.5IGQM tAV 5GTO IGM ts tgq IG IG ts tAV d iGQ/d t tgw GTO IGQM tgw VDSP GTO G - K di/dt GTO G - K t I/C VDM dv/d 2009 1 28 http://store.iiic.cc/ GTO 4GTO Ds 1 Rs VDRM Ls VDRM Cs VRRM 17V19VGTO DS : CS : RS : LS : GTO 6GTO GTO 1LS 7 GTO SW SW CS ITQRM ITQRM SW tw LS ITQRM LS = (tw/)2/CS ITAV 60Hz LS DS CS GTO ITQRM ITAV 1/3 Ds ITSM ITSM Sw + Cs 2 GTO GTO GTO 6 tw 7 6 LS di/ dt Vdsp 8 FG3000DV-90DA 2009 1 29 http://store.iiic.cc/ GTO 8- R S P W ITQRM (A) 3000 PW 21 CS f[V D2 VDM - VD2] f 2500 RS 1 GTO 2000 3 1500 GTO VD = 1/2VDRM VDM = 3/4VDRM diGQ/dt = 40A/ms CS = 4.0mF 1000 500 0.1 0.2 0.3 0.4 DS 1 GTO IFAV 10 ITQRM GTO VRRM VDRM 0.6 0.5 LS (mH) DF 2CS I d v /d t C S I CS dv/dt GTO IFAV ITAV GTO VRRM VDRM IFAVITQRM GTO VRRM VDRM GTO CS ITAV GTO 9 FG3000DV-90DA 1 GTO FDxxxx SRxxxx 9- ITQRM (A) 4000 3500 3000 10 VFP di/dt 2500 QRR 11 2000 GTO A - K VDM 1500 500 0 GTO A - K VD = 2250V VDM = 3375V diGQ/dt = 40A/ms LS = 0.3mH 1000 0 2 4 6 8 10 12 14 VFP QRR 16 1 CS (mF) 3RS RS GTO D F GTO CSRS CS GTO ton min ton mim 5 1 5 CS ton mim 5 GTO CS GTO CS GTO GTO RS CS 5 10 2009 1 30 http://store.iiic.cc/ GTO 1GTO LS (H) RS () 0.7 0.3 5 ~10 1. FD252AV-90 2. FD602BV-90 4.0 0.3 5 ~10 FD1000FH-56 4.0 0.2 5 ~10 FD602BV-90 6.0 0.3 5 ~10 FD1000FV-90 3.0 0.25 5 ~10 FD1000FX-90 6.0 0.2 5 ~10 FD1000FH-56 6.0 0.2 5 ~10 3.0 0.25 5 ~10 5.0 0.2 5 ~10 6.0 0.2 5 ~10 1. SR202AV-90 FG1000BV-90DA 2. FD252AV-90 FG2000FX-50DA CS (F) SR202AH-50S(R) 1. SR202AV-90 FG2000JV-90DA 2. FD252AV-90 3. FD602BV-90 1. SR202AV-90 2. SR202AV-90X2P FG3000DV-90DA 3. FD252AV-90 4. FD602BV-90 1. SR202AV-90 2. SR202AV-90X2P FG3000GX-90DA 3. FD252AV-90 4. FD602AV-90 1. SR202AH-50S(R) FG3300AH-50DA 2. SR202AH-50S(R)X2P FG4000EX-50DA SR202AH-50S(R)X2P 1. SR202AV-90X2P FG4000BX-90DA 2. FD602BV-90 1. SR202AV-90X2P FG4000CX-90DA 2. FD602BV-90 FG6000AU-120D FD1000FV-90 1. FD1000FH-56 2. FD1500AV-90 1. FD1000FV-90 2. FD1500AV-90 1. FD1000FV-90 2. FD1500AV-90 FD2000DU-120 GTO VFP (V) 100 10- 11 QRR GTO A- K Tj = 25C 75 VAK 50 FD1000FV FD1500AV 25 QRR : VDM FD1000FH QRR : 0 0 500 1000 1500 VD 2000 di/dt (A /S) 2009 1 31 http://store.iiic.cc/ GTO 12- 4GTO 1 5 8000 IGM dig/dt 10 90 tw 10 tw 2 IG IGT (mA) VD = 520V IT = 25200A 7000 6000 5000 4000 3000 2000 1000 GTOIGT 0 -60 IGT 12 -20 20 60 100 140 Tj (C) 13tav 2kA/4.5kV GTO diGQ/dt 10 50 tav Ig Lg LgIg2 GTO G - K tav vgk tav 13 GTO ig tav tav 30s tav VGR tav = 20s VGR tav G - K GTO VGR VGRM VGRM VGR vgk VRB GTOG-K2V ig VGRM tGW t GW VGR GTO tav tav = 2s VRB GTO ig : 100A/div. vgk : 5V/div. t : 5s/div. 2 GTO 2009 1 32 http://store.iiic.cc/ GTO 1 2GTO Tj 0C IGM dig/dt tw IG 1 diGQ/dt tav VGR VRB tGW 2 A A/S S A A/S S V V S FG1000BV-90DA 20 - 40 15 - - - 20 - 3.8 - - 30 - 60 - 15 - 15 - 17 2 - 17 150 - 200 FG2000FX-50DA 30 - 50 10 - - - 20 - 3.8 - - 30 - 60 - 20 - 15 - 17 2 - 17 150 - 200 FG2000JV-90DA 30 - 50 10 - - - 20 - 4.5 - - 30 - 60 - 20 - 15 - 17 2 - 17 150 - 200 FG3000DV-90DA 40 - 100 10 - - - 20 - 6.0 - - 40 - 60 - 20 - 15 - 17 2 - 17 150 - 200 FG3000GX-50DA 25 - 50 20 - - - 12 - 3.8 - - 40 - 60 - 20 - 15 - 17 2 - 17 150 - 200 FG3300AH-90DA 40 - 100 10 - - - 20 - 6.0 - - 40 - 60 - 20 - 15 - 17 2 - 17 150 - 200 FG4000EX-90DA 50 - 100 30 - - - 20 - 7.5 - - 50 - 70 - 20 - 15 - 17 2 - 17 150 - 200 FG4000BX-50DA 25 - 50 20 - - - 12 - 4.8 - - 40 - 60 - 20 - 17 - 19 2 - 17 150 - 200 FG4000CX-90DA 40 - 100 20 - - - 20 - 6.0 - - 50 - 70 - 20 - 17 - 19 2 - 17 150 - 200 FG4000GX-90DA 25 - 50 20 - - - 12 - 3.8 - - 40 - 60 - 20 - 15 - 17 2 - 17 150 - 200 FG6000AU-120D 90 - 200 30 - - - 20 - 13 - - 80 - 120 - 20 - 18 - 20 2 - 20 150 - 200 1 2 VD 2 VDRM , tGW VD 50 17V 2009 1 33 http://store.iiic.cc/ GTO 15 2 14 GTO MOSFET 10% diG/dt IGR GTO GTO 90% IGR 1.2 x IGQIGQ d iG/d t d iGQ /dd t iGQ /d t G - K 15 +12V + + GTO +5V + G 0 0V K FET() 0 V FET -17 V + + -17V MOSFET 14GTO 2009 1 34 http://store.iiic.cc/ GTO 5GTO 16 GTO ; ; ; ; ; ; ; ; ;;;;;; 16GTO di/dt 17 FG3000DV-90DA CS 1 17FG3000DV-90DA a b 10 VD = 2250V 7 IGM = 40A diG/dt = 10A/s CS = 6.0F 6 RS = 5 Tj = 125C 9 Eoff (J/P) Eon (J/P) 8 5 diT/dt = 500A /s 4 300A /s 3 2 100A /s 1 0 CS = 3.0F 8 6.0F 7 6 5 4 VD = 2250V VDM = 3375V diGQ/dt = -40A/s VRG = 17V LS = 0.3H Tj = 125C 3 2 1 0 1000 2000 3000 4000 0 5000 (A) 4.0F 0 1000 2000 3000 4000 5000 (A) 2009 1 35 http://store.iiic.cc/ GTO 18 PT ton toff 5ms f 200Hz ton duty ton + toff 0.3 CS 6F, Rs 5, LS 0.3H IT 800A di/dt 300A/s VD 2250V VDM 3375V PT IT x V T I IT x 0.3 Eon Eoff xf 800A x 2.35V x 0.3 1.55 3.0 x 200Hz 1474W di /dt IT ton VDM f = 1 ton + toff VD toff 18GTO 2009 1 36 http://store.iiic.cc/ GTO 6 3 1 GTO GTO Si 1/2 19 1/2 4 Si VLTDS 2/3 GTO FD1000FX-9O FG3000GX-90DA GTO FG4000GX-90DA GTO 2 VLTDS Long term DC stability voltage L.T.D.S. Long term DC stability Weibull 20 VDC m=1 100FIT VDC VLTDS 4.5KV GTO V LTDS 2500V L.T.D.S. GTO VLTDS=3000V E NE PB NB PE xj 1 2 19 106 7GTO L.T.D.S. GTO (fit) 105 104 10m L.T.D.S. GTO 103 FD1000FX-90 FG3000GX-90DA FG4000GX-90DA 102 2500 3000 3500 4000 4500 VDC (V) 20- 2009 1 37 http://store.iiic.cc/ GTO 5GTO 4 GTO GTO GTO AC VVVF D C D C 1 CVCF 21 3 3 PWM 2 3 PWM R S PWM U T GU V GV W GW 3 3 M GX GY GZ 21PWM 1PWM GTO 1 V W 2 L PWM6 GU ON OFF GX OFF ON PWM GV ON OFF GY OFF ON 3 PWM GW ON OFF GZ OFF ON GTO 3 3 U-V 22 V-W GTO 3 3 W-U 23 3 3 24 U 1 0, 2 VC, VC V 3 W 253 22 2009 1 38 http://store.iiic.cc/ GTO 3 3 3 3 M VC 233 6 GT1 GT2 GT3 GT4 ON ON OFF OFF VC 2 4 OFF ON ON OFF VC/2 1 3 OFF OFF ON ON 0 5 6 VC VC/2 0 1 2 1 4 3 4 3 4 3 3 1 2 5 3 6 1 6 1 6 1 1 3 4 5 GT1 GT2 GT3 GT4 243 2009 1 39 http://store.iiic.cc/ GTO a2 b3 253 2009 1 40 http://store.iiic.cc/ HVIGBT 1HVIGBT 3 1 HVIGBT HVIGBT 2/3 50 60 1HVIGBT 2 HVIGBT 1 - 40 125 Cies C 3 CCG CCE Cies=CCG+CGE Coes=CCE+CCG Cres=CCG CGE E ICM 1 3 2HVIGBT HVIGBT 3 di/dt di/dt ic -40125 VCE 4 di/dt di/dt 4-1 1 t t off t on HVIGBT 2 4-1 3HVIGBT HVIGBT C 20V G 2 1 E or E 2 4-1 HVIGBTHigh Voltage Insulated Gate Bipolar Transistor Modules 2009 1 41 http://store.iiic.cc/ HVIGBT 4-2 4-2 5-1 5-2 V L 2 di/dt x L2 CS 1 1 L1(IOFF)2 = CS(V)2 2 2 L1(IOFF)2 CS = (V)2 L2 P-NP-N 6 a P-N 6 c 4-2 L1 80 P-N 2 L1 L1 P L2 IC L1 L2 RCDi CS RS + C DS VCC DS L2 L2 RS L2 C CS N VCE Ic VCE V V V V di/dt VCC IOFF VCE t 5-2 5-1 HVIGBTHigh Voltage Insulated Gate Bipolar Transistor Modules 2009 1 42 http://store.iiic.cc/ HVIGBT 1 a b G E E C C E E G c 9 6 N P 4-3 1 2 1 q P 10 N 40mm 300mm 7 8 HVIGBTHigh Voltage Insulated Gate Bipolar Transistor Modules 2009 1 43 http://store.iiic.cc/ HVIGBT wL ; ;; ;; ; 11 e 14 12 1 2 15 ...... CE N 13 16 HVIGBTHigh Voltage Insulated Gate Bipolar Transistor Modules 2009 1 44 http://store.iiic.cc/ HVIGBT 4-4 2 1 VG 15V 10 -5V VG V CEsat 15 10 - VG 10 - V G HVIGBT - VGE - VGE 5 15V + +VG RG AMP t VG -VG Pre-amp. - 17 18 3RG HVIGBT RG VG 15V 10- VG 5 15V RG HVIGBT RG tr tf HVIGBT di/dt RG di/dt RG RG VCEsat HVIGBT RG 10 HVIGBTHigh Voltage Insulated Gate Bipolar Transistor Modules 2009 1 45 http://store.iiic.cc/ HVIGBT 4 5 VGE RG + VCC + Q1 - + Typ. 1.3 x QG x fc Q2 COM - QG VGE 0 15 a fc b HVIGBT IGpeak dVCE/dtDC10V/ns VGE -- VGE RG RG IG 6080 IC VGE(V) QG (+VGE) VGE VCC UP RG QG(C) Pre-Amp (QG) (-VGE) 20 19 = 1 T V * idt = (+V GE) 1 T1 idt + (-V GE) 1 T2 = (+ V GE) idt * QG * fC + ( -V GE) * QG * fC = ((+ V GE) + (-V GE)) QG * fC +VGE -VGE QG -VGE VGE fC HVIGBTHigh Voltage Insulated Gate Bipolar Transistor Modules 2009 1 46 http://store.iiic.cc/ HVIGBT 6 c s d s e 100A 1 2 L B iloop L B C A 22 di/dt L 21 N HVIGBTdi/dt -d i / d t A B C VGE iloop HVIGBTHigh Voltage Insulated Gate Bipolar Transistor Modules 2009 1 47 http://store.iiic.cc/ 1 R1 di/dt 2 AC Re SCR D ZD 2 k 1 3 mA A A 1 FT1000A 250mAT j = 25 2.5VT j = 25 0.20V T j = 125 2 1 2 2 1 3 4 0.010.1F 20 15 A 2.5 1.5 A E 0 0 F 0.5 SR2 100 200 300 400 500 6W50% D 1 C SCR 1.0 mA 5 C 2.0 0 0 10 Tj = -40 3.0 Tj = 25 Tj = 125 V V A B 2 3 E R SR1 4 2 A 1 3 2009 1 48 http://store.iiic.cc/ 5 0.7V 6 3 0.047mF SCR C 2 SR R 5 di/dt VO DC di/dt 4 4 4 FT1000A SR DC 0.7V di/dt SR 50% 1 50% FT1000A 3W 50% 6W 6 x 100 % FT1000A 10W 10W 14V AB14V50% 1.75A 14V/1.75A 8 di/dt 8 di/dt AB AB DC CD di/dt 4.5V EF di/dt 0.5V 2.0 19 7 0.1mm/ms 20V 2009 1 49 http://store.iiic.cc/ 5 5 High Gate Drive di/dt High Gate Drive 5 di/dt High Gate Drive 6 6 di/dt High Gate Drive di/dt 40A 6 300A di/dt a. b. 7 di/dt 7 8 5 di/dt High Gate Drive di/dt 8 100A di/dt 8 2009 1 50 http://store.iiic.cc/ IGT 550mA 1.5A IG t 1.5 s 50 s 300 s 8High Gate Drive High Gate Drive Ip 8 10 IGT High Gate Drive 90% 2009 1 51 http://store.iiic.cc/ www.MitsubishiElectric.co.jp/semiconductors http://store.iiic.cc/