©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002
KSC2383
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE Classification
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage 160 V
VCEO Collector-Emitter Voltage 160 V
VEBO Emitter-Base Voltage 6 V
ICCollector Current 1 A
IBBase Current 0.5 A
PCCollector Power Dissipation 900 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parame ter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB=150V, IE=0 1 µA
IEBO Emitter Cut-off Current VEB=6V, IC=0 1 µA
BVCEO Collect or-E mitter Break down Voltage IC=10mA, IB=0 160 V
hFE DC Current Gain VCE=5V, IC=200mA 60 320
VCE (sat) Collector-Emitter Saturat ion Voltage IC=500mA, IB=50mA 1.5 V
VBE (on) Base-Emitter On Voltage V CE=5V, IC=5mA 0.45 0.75 V
fTCurrent Gain Bandwidth Product VCE=5V, IC=200mA 20 100 MHz
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 20 pF
Classification R O Y
hFE 60 ~ 120 100 ~ 200 160 ~ 320
KSC2383
Color TV Audio Output & Color TV Vertical
Deflection Output
TO-92L
1
1. Emitter 2. Collector 3. Base
©2002 Fairchild Semiconductor Corporation
KSC2383
Rev. B1, September 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IB = 10mA
EMITTER CO MMON
Ta=25oC
IB = 0.5mA
IB = 1mA
IB = 15m A
IB = 6mA
IB = 4mA
IB = 3mA
IB = 2.5mA
IB = 2mA
IB = 1.5m A
Ic[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
10 100 1000
1
10
100
1000
VCE=5V
VCE=10V
EMITTER COMMON
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
100 1000
10
100
1000
VCE=1V
VCE=5V
VCE=10V
EMITTER COMMON
Ta = 25oC
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000
1E-3
0.01
0.1
1
IC/IB=5
EMITTER COMMON
Ta = 25oC
IC/IB=10
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
0.0 0.2 0.4 0.6 0.8 1.0
0.0
0.2
0.4
0.6
0.8
1.0 EMITTER COMMON
IC/IB=10
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
1 10 100 1000
1
10
100
1000 EMITTER COMMON
f = 1MHz
Ta = 25oC
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR BASE VOLTAGE
©2002 Fairchild Semiconductor Corporation
KSC2383
Rev. B1, September 2002
Typical Characteristics (Continued)
Figure 7. Curre nt Gain Bandwidth Product Figure 8. Safe Operating Area
1 10 100 1000
1
10
100
1000 EMITTER COMMON
Ta = 25oC
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
1 10 100 1000
1E-3
0.01
0.1
1
10
VCEO MAX .
DC T
a
=25
o
C
I
C
MAX.=1A
100ms
10ms
IC MAX. (Pulse)
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Package Dimensions
KSC2383
4.90
±0.20
0.50
±0.10
1.27TYP
[1.27
±0.20
]
0.45
±0.10
0.45 ±0.10
0.80
±0.10
0.70MAX.
1.00MAX.
2.54 TYP
8.00 ±0.20
1.70 ±0.20
1.00 ±0.10
13.50 ±0.40
3.90 ±0.20
3.90
±0.20
1.45 ±0.20
TO-92L
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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