MB6S - ON SEMICONDUCTOR

October, 2019 − Rev. 3

1Publication Order Number:

MB8S/D

MB1S-MB8S

Bridge Rectifiers, 0.5 A

Description

The MB family of bridge rectifiers is a 0.5 A rectifier family that

achieves high surge current absorption within a very small foot print.

Within its small 35 mm2 form factor, the MB family shines in its surge

capability. In order to absorb high surge currents, the design supports

a35A I

FSM rating and a 5.0 A2Sec I2T rating. Devices in the family

are also rated to breakdown voltages of up to 1000 V. These features

make the MB family ideal for small power supplies that need a little

extra surge capability.

For higher IFAV current ratings, lower profile packaging, or lower

VF values, explore the ON Semiconductor MDB family of bridge

rectifiers. For improved VF and efficiency values in the MB package

or even higher surge capability, ask about ON Semiconductor’s

pending MBxSV family.

Features

•Low−Leakage

•Surge Overload Rating: 35 A peak

•Ideal for Printed Circuit Board

•UL Certified: UL #E258596

•NRV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•This Device is Pb−Free and RoHS Compliant

www.onsemi.com

SOIC4 W

CASE 751EP

MARKING DIAGRAM

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = 3−Digit Data Code (Year & Week)

MB*S = Specific Device Code

* = 1/2/4/6/8

See detailed ordering and shipping information on page 2 of

this data sheet.

ORDERING INFORMATION

−+

$Y&Z&3

MB*S

MB1S−MB8S

www.onsemi.com

ABSOLUTE MAXIMUM RATINGS

(Values are at TA = 25°C unless otherwise noted)

Symbol Parameter MB1S MB2S MB4S MB6S MB8S Unit

VRRM Maximum Repetitive Reverse Voltage 100 200 400 600 800 V

VRMS Maximum RMS Bridge Input Voltage 70 140 280 420 560 V

VRDC Reverse Voltage (Rated VR) 100 200 400 600 800 V

IF(AV) Average Rectified Forward Current at TA = 50°C0.5 A

IFSM Non−Repetitive Peak Forward Surge Current:

8.3 ms Single Half−Sine−Wave

35 A

TSTG Storage Temperature Range −55 to +150 °C

TJOperating Junction Temperature Range −55 to +150 _C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

PDPower Dissipation 1.4 W

RθJA Thermal Resistance, Junction to Ambient, per Leg (Note 1) 85 °C/W

RθJL Thermal Resistance, Junction to Lead, per Leg (Note 1) 20 °C/W

1. Device mounted on PCB with 0.5 × 0.5 inch (13 × 13 mm) lead length.

ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted)

Symbol Parameter Conditions Value Unit

VFForward Voltage, per Bridge IF = 0.5 A 1.0 V

IRReverse Current, per Leg at Rated VRTA = 25°C5.0 mA

TA = 125°C0.5 mA

t I

t Rating for Fusing t < 8.3 ms 5.0 A

CTTotal Capacitance, per Leg VR = 4.0 V, f = 1.0 MHz 13 pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

ORDERING INFORMATION

Part Number Top Mark Package Shipping

†

MB1S, NRVMB1S* MB1S SOIC4 W

(Pb−Free)

3,000 / Tape & Reel

MB2S, NRVMB2S* MB2S

MB4S, NRVMB4S* MB4S

MB6S, NRVMB6S* MB6S

MB8S, NRVMB8S* MB8S

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP

Capable

MB1S−MB8S

www.onsemi.com

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 1. Derating Curve for Output Rectified

Current

Figure 2. Typical Reverse Leakage Characteristics

Per Leg

Figure 3. Maximum Non−Repetitive Peak Forward

Surge Current Per Leg

Figure 4. Typical Junction Capacitance Per Leg

Figure 5. Typical Forward Voltage Characteristics

Per Leg

0 20 40 60 80 100 120 140 160

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

Ambient Temperature (5C)

Average Forward Rectified

Current (A)

Aluminum Substrate

Glass

Epoxy

P.C.B

Resistive or Inductive Load

0.01

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse

Leakage Current (mA)

Tj = 25°C

20 40 60 80 100

0.1

100

Tj = 125°C

0.2

0.01

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

Tj = 25°C

0.1

Tj = 25°C

Pulse Width = 300 ms

1% Duty Cycles

0.4 0.6 0.8 1.0 1.2 1.4 1.6

0.1

Reverse Voltage (V)

Junction Capacitance (pF)

Tj = 25°C

f = 1 MHz

Vslg = 50 mVp−p

1 10 100 200

Number of Cycles

F = 50 Hz

Peak Forward Surge Current (A)

F = 60 Hz

10 100

Tj = 40°C

Single Half Sine−Wave

(JEDEC Method)

1 Cycle

SOIC4 W

CASE 751EP

ISSUE O

DATE 30 SEP 2016

0.10 C

0.13 C A B

0.13 C B A

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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Phone: 011 421 33 790 2910

LITERATURE FULFILLMENT:

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