BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 4 -- 22 July 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 1620 28 55 18.5 31 31[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. 1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2110 MHz to 2170 MHz frequency range BLF7G22L-200; BLF7G22LS-200 NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF7G22L-200 (SOT502A) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 BLF7G22LS-200 (SOT502B) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF7G22L-200 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A BLF7G22LS-200 - earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V Tstg storage temperature 65 +150 C Tj junction temperature - 200 C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-c) BLF7G22L-200_7G22LS-200 Product data sheet thermal resistance from junction to case Conditions Typ Tcase = 80 C; PL = 80 W (CW); VDS = 28 V; IDq = 1620 mA 0.26 K/W All information provided in this document is subject to legal disclaimers. Rev. 4 -- 22 July 2011 Unit (c) NXP B.V. 2011. All rights reserved. 2 of 13 BLF7G22L-200; BLF7G22LS-200 NXP Semiconductors Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.5 mA Min Typ Max Unit 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 150 mA 1.5 1.9 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 4.2 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 42 50.8 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 420 nA gfs forward transconductance VDS = 10 V; ID = 5.25 A - 18.9 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 5.25 A - 0.054 - 7. Test information Table 7. Functional test information Mode of operation: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 1-64 DPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 1620 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PL(AV) average output power Conditions Min Typ Max Unit - 55 - W Gp power gain PL(AV) = 55 W 16.8 18.5 - dB RLin input return loss PL(AV) = 55 W - 15 6 dB D drain efficiency PL(AV) = 55 W 27 31 - % ACPR adjacent channel power ratio PL(AV) = 55 W - 31 25.5 dBc 7.1 Ruggedness in class-AB operation The BLF7G22L-200 and BLF7G22LS-200 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1620 mA; PL = 200 W (CW); f = 2110 MHz to 2170 MHz. BLF7G22L-200_7G22LS-200 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 22 July 2011 (c) NXP B.V. 2011. All rights reserved. 3 of 13 BLF7G22L-200; BLF7G22LS-200 NXP Semiconductors Power LDMOS transistor 7.2 Impedance information Table 8. Typical impedance Measured load-pull data; IDq = 1620 mA; VDS = 28 V. f ZS[1] ZL[1] (MHz) () () 2050 1.05 j4.04 2.04 j1.28 2110 1.18 j4.17 1.67 j1.52 2140 1.32 j4.68 1.67 j1.52 2170 1.58 j4.37 1.62 j1.63 2230 2.55 j5.14 1.51 j1.83 [1] ZS and ZL defined in Figure 1. drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.3 1 Tone CW 001aan064 19 001aan065 60 D (%) Gp (dB) 50 (1) (2) (3) 18 (1) (2) (3) 40 30 17 20 10 16 0 80 160 240 0 80 PL(AV) (W) VDS = 28 V; IDq = 1620 mA. (1) f = 2110 MHz (1) f = 2110 MHz (2) f = 2140 MHz (2) f = 2140 MHz (3) f = 2170 MHz (3) f = 2170 MHz Power gain as a function of average load power; typical values BLF7G22L-200_7G22LS-200 Product data sheet 240 PL(AV) (W) VDS = 28 V; IDq = 1620 mA. Fig 2. 160 Fig 3. Drain efficiency as a function of average load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 -- 22 July 2011 (c) NXP B.V. 2011. All rights reserved. 4 of 13 BLF7G22L-200; BLF7G22LS-200 NXP Semiconductors Power LDMOS transistor 7.4 1-carrier W-CDMA 001aan066 19.0 Gp (dB) 50 D (%) Gp 18.6 40 18.2 30 001aan067 8 PAR 6 17.8 (1) (2) 20 D 4 (3) 10 17.4 0 80 100 PL(AV) (W) 17.0 0 20 40 60 2 30 110 190 270 PL(M) (W) VDS = 28 V; IDq = 1620 mA; PAR = 7.2 dB at 0.01 probability on the CCDF. VDS = 28 V; IDq = 1620 mA; f = 2140 MHz; PAR = 7.2 dB at 0.01 probability on the CCDF. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz Fig 4. Power gain and drain efficiency as functions of average load power; typical values Fig 5. Peak-to-average power ratio as function of peak power; typical values 001aan068 -25 ACPR5M (dBc) -35 (1) (2) (3) -45 -55 0 20 40 60 80 100 PL(AV) (W) VDS = 28 V; IDq = 1620 mA; PAR = 7.2 dB at 0.01 probability on the CCDF. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz Fig 6. Adjacent power channel ratio (5 MHZ) as function of average load power; typical values BLF7G22L-200_7G22LS-200 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 22 July 2011 (c) NXP B.V. 2011. All rights reserved. 5 of 13 BLF7G22L-200; BLF7G22LS-200 NXP Semiconductors Power LDMOS transistor 7.5 2-carrier W-CDMA 001aan069 19.0 Gp (dB) 50 D (%) Gp Gp (dB) 40 18.6 30 18.2 17.8 20 17.8 17.4 10 17.4 18.6 18.2 001aan070 19.0 D 0 120 17.0 0 40 80 (1) (2) (3) 17.0 0 40 80 PL(AV) (W) 120 PL(AV) (W) VDS = 28 V; IDq = 1620 mA; f = 2140 MHz; Channel Spacing = 5 MHz; PAR = 8.4 dB at 0.01 probability on the CCDF. VDS = 28 V; IDq = 1620 mA; Channel Spacing = 5 MHz; PAR = 8.4 dB at 0.01 probability on the CCDF. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz Fig 7. Power gain and drain efficiency as functions of average load power; typical values 001aan071 50 Fig 8. Power gain as a function of average load power; typical values 001aan072 -20 Gp (dB) ACPR5M (dBc) (1) (2) (3) 40 -30 (1) (2) (3) 30 -40 20 10 0 40 80 120 -50 0 PL(AV) (W) (1) f = 2110 MHz (2) f = 2140 MHz (2) f = 2140 MHz (3) f = 2170 MHz (3) f = 2170 MHz Drain efficiency as function of average load power; typical values Product data sheet 120 VDS = 28 V; IDq = 1620 mA; Channel Spacing = 5 MHz; PAR = 8.4 dB at 0.01 probability on the CCDF. (1) f = 2110 MHz BLF7G22L-200_7G22LS-200 80 PL(AV) (W) VDS = 28 V; IDq = 1620 mA; Channel Spacing = 5 MHz; PAR = 8.4 dB at 0.01 probability on the CCDF. Fig 9. 40 Fig 10. Adjacent power channel ratio (5 MHZ) as function of average load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 -- 22 July 2011 (c) NXP B.V. 2011. All rights reserved. 6 of 13 BLF7G22L-200; BLF7G22LS-200 NXP Semiconductors Power LDMOS transistor 7.6 Test circuit 11 mm C4 C15 C2 C1 R1 C13 65.000 mm C6 C9 C10 C12 C7 C5 C11 C8 C14 C3 9 mm 18 mm 50.000 mm 50.000 mm 001aan552 See Table 9 for list of components. Fig 11. Component layout Table 9. List of components See Figure 11 for component layout. Component Description Value C1 multilayer ceramic chip capacitor 10 F [1] TDK multilayer ceramic chip capacitor 4.7 F [1] TDK 22 pF [2] ATC100B ATC100B C2, C3 C4, C5, C6, C7, C8 C9 multilayer ceramic chip capacitor 2.0 pF [2] C10 multilayer ceramic chip capacitor 2.1 pF [2] ATC100B 0.5 pF [2] ATC100B 0.9 pF [2] ATC100B [1] TDK C11 multilayer ceramic chip capacitor C12 BLF7G22L-200_7G22LS-200 Product data sheet multilayer ceramic chip capacitor Remarks multilayer ceramic chip capacitor C13, C14 multilayer ceramic chip capacitor 330 nF C15 electrolytic capacitor 470 F; 63 V R1 chip resistor 10 [1] TDK or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 4 -- 22 July 2011 Philips 1206 (c) NXP B.V. 2011. All rights reserved. 7 of 13 BLF7G22L-200; BLF7G22LS-200 NXP Semiconductors Power LDMOS transistor 8. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 12. Package outline SOT502A BLF7G22L-200_7G22LS-200 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 22 July 2011 (c) NXP B.V. 2011. All rights reserved. 8 of 13 BLF7G22L-200; BLF7G22LS-200 NXP Semiconductors Power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 13. Package outline SOT502B BLF7G22L-200_7G22LS-200 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 22 July 2011 (c) NXP B.V. 2011. All rights reserved. 9 of 13 BLF7G22L-200; BLF7G22LS-200 NXP Semiconductors Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 10. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio RF Radio Frequency VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 11. Revision history Document ID Release date Data sheet status BLF7G22L-200_7G22LS-200 v.4 20110722 Modifications: * Product data sheet Change notice Supersedes - BLF7G22L-200_7G22LS-200 v.3 The status of this document has been changed to Product data sheet. BLF7G22L-200_7G22LS-200 v.3 20110401 Preliminary data sheet - BLF7G22L-200_7G22LS-200 v.2 BLF7G22L-200_7G22LS-200 v.2 20101228 Preliminary data sheet - BLF7G22L-200_7G22LS-200 v.1 BLF7G22L-200_7G22LS-200 v.1 20100419 BLF7G22L-200_7G22LS-200 Product data sheet Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 4 -- 22 July 2011 - (c) NXP B.V. 2011. All rights reserved. 10 of 13 BLF7G22L-200; BLF7G22LS-200 NXP Semiconductors Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 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Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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All rights reserved. 11 of 13 NXP Semiconductors BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF7G22L-200_7G22LS-200 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 22 July 2011 (c) NXP B.V. 2011. All rights reserved. 12 of 13 NXP Semiconductors BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.6 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 4 1 Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Handling information. . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 22 July 2011 Document identifier: BLF7G22L-200_7G22LS-200