IL1, IL2, IL5, IL74 ILD1, ILD2, ILD5, ILD74 ILQ1, ILQ2, ILQ5, ILQ74 HIGH DENSITY PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 IL* Package 'FF' (marked I_ _ _ FF) ILD*/ILQ* Package 'GG' (marked I_ _ _ GG) IL1 IL2 IL5 IL74 'X' SPECIFICATION APPROVALS Add 'X' after part number l l 7.62 6.62 FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l Three package types l High Current Transfer Ratio (50% min) l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High BVCEO (70V min) IL2, ILD2, ILQ2, IL5, ILD5, ILQ5 APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances OPTION SM OPTION G SURFACE MOUNT 7.62 ILD1 ILD2 ILD5 ILD74 10.46 9.86 1.25 0.75 3 4 7.62 4.0 3.0 0.5 10.16 13 Max 0.26 3.35 2.54 7.0 6.0 1 8 2 3 7 6 5 4 1.2 10.16 9.16 7.62 4.0 3.0 13 Max 0.5 3.0 0.5 ILQ1 ILQ2 ILQ5 ILQ74 0.26 3.35 2.54 7.0 6.0 1.2 1 16 2 15 3 14 4 13 5 12 6 11 7 10 9 8 7.62 4.0 3.0 13 Max 0.5 0.26 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 1/4/03 6 5 3.0 20.32 19.32 0.6 0.1 1 2 0.5 BSI approved - Certificate No. 8001 The IL*, ILD*, ILQ* series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in space efficient dual in line plastic packages. 7.0 6.0 1.2 VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 DESCRIPTION Dimensions in mm 2.54 3.0 0.5 3.35 0.26 ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com DB91088m-AAS/A6 ABSOLUTEMAXIMUMRATINGS (25C unless otherwise specified) Storage Temperature -40C to + 125C Operating Temperature -25C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO IL2,ILD2,ILQ2,IL5,ILD5,ILQ5 IL1,ILD1,ILQ1,IL74,ILD74,ILQ74 Emitter-collector Voltage BVECO Power Dissipation 70V 50V 6V 150mW POWER DISSIPATION Total Power Dissipation 170mW (derate linearly 2.67mW/C above 25C) ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Current (IR) Output Collector-emitter Breakdown (BVCEO) IL2, ILD2, ILQ2, IL5, ILD5, ILQ5 IL1, ILD1, ILQ1, IL74, ILD74, ILQ74 Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Coupled Note 1 Note 2 1/4/03 MIN TYP MAX UNITS 1.2 V A IF = 50mA VR = 4V 70 V IC = 1mA , ( Note 2 ) 50 6 V V nA IC = 1mA , ( Note 2 ) IE = 100A VCE = 10V % % % % 10mA IF , 10V VCE 10mA IF , 10V VCE 10mA IF , 10V VCE 16mA IF , 5V VCE % % % % V VRMS VPK s s 10mA IF , 0.4V VCE 10mA IF , 0.4V VCE 10mA IF , 0.4V VCE 16mA IF , 0.5V VCE 16mA IF , 2mA IC See note 1 See note 1 VIO = 500V (note 1) IF = 10mA VCC = 5V, R L = 75 Current Transfer Ratio (CTR) (Note 2) IL1, ILD1, ILQ1 20 IL2, ILD2, ILQ2 100 IL5, ILD5, ILQ5 50 IL74, ILD74, ILQ74 12.5 Saturated Current Transfer Ratio IL1, ILD1, ILQ1 IL2, ILD2, ILQ2 IL5, ILD5, ILQ5 IL74, ILD74, ILQ74 12.5 Collector-emitter Saturation Voltage,VCE (SAT) Input to Output Isolation Voltage VISO 5300 Input to Output Isolation Voltage VISO 7500 Input-output Isolation Resistance RISO 5x1010 Output Rise Time tr Output Fall Time tf 1.65 10 TEST CONDITION 50 300 500 400 75 170 100 0.4 2 2 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB91088m-AAS/A6 Collector Power Dissipation vs. Ambient Temperature Relative Current Transfer Ratio vs. Ambient Temperature Relative current transfer ratio Collector power dissipation PC (mW) 200 150 100 50 1.5 IF = 10mA VCE = 0.4V 1.0 0.5 0 0 -30 0 25 50 75 100 -30 125 0 25 50 75 Ambient temperature TA ( C ) Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current 100 60 Relative current transfer ratio Forward current IF (mA) 50 40 30 20 10 2.8 2.4 2.0 1.6 1.2 0.8 VCE = 0.4V TA = 25C 0.4 0 0 -30 0 25 50 75 100 125 1 10 20 50 Relative Current Transfer Ratio vs. Forward Current IF = 10mA VCE = 10V Relative current transfer ratio Relative current transfer ratio Relative Current Transfer Ratio vs. Ambient Temperature 1.0 0.5 0 1.4 1.2 1.0 0.8 0.6 0.4 VCE = 10V TA = 25C 0.2 0 -30 0 25 50 75 Ambient temperature TA ( C ) 1/4/03 5 Forward current IF (mA) Ambient temperature TA ( C ) 1.5 2 100 1 2 5 10 20 50 Forward current IF (mA) DB91088m-AAS/A6 Fig.1 Forword Current vs. Ambient Temperatute Fig.2 Collector Power Dissiption vs. Ambient Temperature Collector Power dissipation Pc (mW) 60 Forward current IF (mA) 50 40 30 20 10 0 -25 0 25 50 75 100 125 200 150 100 50 0 -25 o 7mA 100 125 o 4 3 2 Ta= 75 C 50 C o 200 o 25 C 0C -25 C o 100 o 50 20 10 5 1 2 1 0 5 15 10 0 1.0 0.5 1.5 2.0 2.5 3.0 Forward voltage VF (V) Forward current IF (mA) Fig.5 Current Transfer Ratio vs. Forward Current Fig.6 Collector Current vs. Collector-emitter Voltage 30 200 VCE= 5V Ta= 25 C 180 o IF = 30mA o Collector current Ic (mA) Current transfer ratio CTR (%) 75 500 O Ta= 25 C 0 160 140 120 100 80 60 40 Ta= 25 C 20mA 25 Pc(MAX.) 20 15 10mA 10 5mA 5 20 0 0 1 2 5 10 20 Forward current IF (mA) 01/04/03 50 Fig.4 Forward Current vs. Forward Voltage Forward current IF (mA) 1mA 3mA 5mA Ic= 0.5mA Collecotr-emitter saturation voltage VCE (sat) (V) 5 25 Ambient temperature Ta ( C) Fig.3 Collector-emitter Saturation Voltage vs. Forward Current 6 0 o Ambient temperature Ta ( C) 50 0 1 2 3 4 5 6 7 8 9 Collector-emitter voltage VCE (V) DB91088m-AAS/A6 Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature Relative current transfer ratio (%) 150 Collector-emitter saturation voltage VCE (sat) (V) Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature I F = 5mA VCE= 5V 100 50 0 -30 0 25 50 75 0.16 I F= 20mA Ic= 1mA 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 -25 100 Ambient temperature Ta ( C) 50 75 100 Fig.10 Response Time vs. Load Resistance -5 500 VCE= 20V -6 10 Response time ( s) Collector dark current I CEO (A) 25 Ambient temperature Ta ( C) Fig.9 Collector Dark Current vs. Ambient Temperature 10 0 o o -7 10 -8 10 -9 10 -10 10 200 100 VCE = 2V Ic= 2mA Ta= 25 C o 50 tr 20 10 td tf 5 ts 2 1 0.5 -11 10 -25 0 25 50 75 0.2 0.05 100 o Ambient temperature Ta ( C) 0.1 0.2 Fig.11 Frequency Response 1 2 5 10 Test Circuit for Response Time Vcc VCE = 5V Ic= 2mA Ta= 25 C o Voltage gain Av (dB) 0.5 Load resistance RL(k ) 0 Input RD RL Input Output Output 10% 90% ts td -5 tr RL= 10k 100 1k Vcc -15 RD -20 0.5 1 tf Test Circuit for Frequency Response -10 2 5 10 20 100 RL Output 500 1000 Frequency f (kHz) 01/04/03 DB91088m-AAS/A6