ILQ2X - Isocom Components

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, Cleveland, TS25 1YD

Tel: (01429) 863609 Fax :(01429) 863581

1/4/03

0.5

7.62

7.0

6.0

1.2

10.16

9.16

7.0

6.0

7.62

1.2

13°

Max

0.5

2.54

0.5 0.26

0.5

3 4

Dimensions in mm

HIGH DENSITY

PHOTOTRANSISTOR OPTICALLY

COUPLED ISOLATORS

7.0

6.0

1.2

7.62

3.0

0.5

0.26

2.54

0.5 0.26

13°

Max

3.0

13°

Max

3.35

4.0

3.0

20.32

19.32 4.0

3.0

4.0

3.0

3.35

2.54

4 5

7.62

6.62

2 5

IL1, IL2, IL5, IL74

ILD1, ILD2, ILD5, ILD74

ILQ1, ILQ2, ILQ5, ILQ74

IL1

IL2

IL5

IL74

ILD1

ILD2

ILD5

ILD74

ILQ1

ILQ2

ILQ5

ILQ74

OPTION G

7.62

SURFACE MOUNT

OPTION SM

10.16

0.26

DB91088m-AAS/A6

ISOCOM INC

1024 S. Greenville Ave, Suite 240,

Allen, TX 75002 USA

Tel: (214) 495-0755 Fax: (214) 495-0901

e-mail info@isocom.com

http://www.isocom.com

10.46

9.86

0.6

0.1 1.25

0.75

APPROVALS

ll UL recognised, File No. E91231

IL* Package 'FF' (marked I_ _ _ FF)

ILD*/ILQ* Package 'GG' (marked I_ _ _ GG)

'X' SPECIFICATION APPROVALS

Add 'X' after part number

ll VDE 0884 in 3 available lead form : -

- STD

- G form

- SMD approved to CECC 00802

ll BSI approved - Certificate No. 8001

DESCRIPTION

The IL*, ILD*, ILQ* series of optically coupled

isolators consist of infrared light emitting diodes

and NPN silicon photo transistors in space

efficient dual in line plastic packages.

FEATURES

lOptions :-

10mm lead spread - add G after part no.

Surface mount - add SM after part no.

Tape&reel - add SMT&R after part no.

ll Three package types

lHigh Current Transfer Ratio (50% min)

lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )

lHigh BVCEO (70V min)

IL2, ILD2, ILQ2, IL5, ILD5, ILQ5

APPLICATIONS

lComputer terminals

lIndustrial systems controllers

lMeasuring instruments

lSignal transmission between systems of

different potentials and impedances

Input Forward Voltage (VF)1.2 1.65 VIF = 50mA

Reverse Current (IR)10 µA VR = 4V

Output Collector-emitter Breakdown (BVCEO)

IL2, ILD2, ILQ2, IL5, ILD5, ILQ5 70 VIC = 1mA , ( Note 2 )

IL1, ILD1, ILQ1, IL74, ILD74, ILQ74 50 VIC = 1mA , ( Note 2 )

Emitter-collector Breakdown (BVECO)6VIE = 100µA

Collector-emitter Dark Current (ICEO)50 nA VCE = 10V

Coupled Current Transfer Ratio (CTR) (Note 2)

IL1, ILD1, ILQ1 20 300 %10mA IF , 10V VCE

IL2, ILD2, ILQ2 100 500 %10mA IF , 10V VCE

IL5, ILD5, ILQ5 50 400 %10mA IF , 10V VCE

IL74, ILD74, ILQ74 12.5 %16mA IF , 5V VCE

Saturated Current Transfer Ratio

IL1, ILD1, ILQ1 75 %10mA IF , 0.4V VCE

IL2, ILD2, ILQ2 170 %10mA IF , 0.4V VCE

IL5, ILD5, ILQ5 100 %10mA IF , 0.4V VCE

IL74, ILD74, ILQ74 12.5 %16mA IF , 0.5V VCE

Collector-emitter Saturation Voltage,VCE (SAT) 0.4 V16mA IF , 2mA IC

Input to Output Isolation Voltage VISO 5300 VRMS See note 1

Input to Output Isolation Voltage VISO 7500 VPK See note 1

Input-output Isolation Resistance RISO 5x10 10 ΩVIO = 500V (note 1)

Output Rise Time tr 2µsIF = 10mA

Output Fall Time tf 2µsVCC = 5V, RL = 75Ω

PARAMETER MIN TYP MAX UNITS TEST CONDITION

Note 1Measured with input leads shorted together and output leads shorted together.

Note 2Special Selections are available on request. Please consult the factory.

1/4/03

ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )

ABSOLUTE MAXIMUM RATINGS

(25°C unless otherwise specified)

Storage Temperature -40°C to + 125°C

Operating Temperature -25°C to + 100°C

Lead Soldering Temperature

(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

Forward Current 50mA

Reverse Voltage 6V

Power Dissipation 70mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BVCEO

IL2,ILD2,ILQ2,IL5,ILD5,ILQ5 70V

IL1,ILD1,ILQ1,IL74,ILD74,ILQ74 50V

Emitter-collector Voltage BVECO 6V

Power Dissipation 150mW

POWER DISSIPATION

Total Power Dissipation 170mW

(derate linearly 2.67mW/°C above 25°C)

DB91088m-AAS/A6

1/4/03

Ambient temperature TA ( °C )

150

200

Ambient temperature TA ( °C )

Collector power dissipation PC (mW)

Collector Power Dissipation vs. Ambient Temperature

Forward Current vs. Ambient Temperature

Ambient temperature TA ( °C )

100

0.5

1.0

1.5 IF = 10mA

VCE = 10V

Forward current IF (mA)

Relative Current Transfer Ratio

vs. Ambient Temperature

Relative current transfer ratio

-30 0 25 50 75 100 125

-30 0 25 50 75 100 1 2 5 10 20 50

0.4

0.6

0.8

1.0

1.2

0.2

1.4

VCE = 10V

TA = 25°C

Relative current transfer ratio

Relative Current Transfer Ratio

vs. Forward Current

Forward current IF (mA)

Ambient temperature TA ( °C )

0.5

1.0

1.5 IF = 10mA

VCE = 0.4V

Relative Current Transfer Ratio

vs. Ambient Temperature

Relative current transfer ratio

-30 0 25 50 75 100

1 2 5 10 20 50

1.2

1.6

2.0

2.4

2.8

VCE = 0.4V

TA = 25°C

Relative current transfer ratio

Relative Current Transfer Ratio

vs. Forward Current

Forward current IF (mA)

0.8

0.4

01/04/03 DB91088m-AAS/A6

Fig.1 Forword Current Fig.2 Collector Power Dissiption

vs. Ambient Tempera ture

Fig.4 Forward Current vs. Forward

Fig.5 Current Transfer Rati o vs.

Forward Curren t Fig.6 Coll ector Current vs.

Collector-emitter Voltage

FCE

0-25

Ta= 75 C

50 C 25 C

0 C

-25 C

V = 5V

Ta= 25 C

CE Ta= 25 C

I = 30mA

Pc(MAX.)

5mA

10mA

20mA

vs. Ambient Tempera tute

Collector-emitter voltage V (V)

Forward voltage V (V)

Ambient temperature Ta ( C)Ambient temperature Ta ( C)

Forward current I (mA )

Collector Power dissipation Pc (mW)

Forward current I (mA )

Current transfer ratio CTR (%)

Collector current Ic (mA)

Fig.3 Co ll e c tor-emi tter Sa tura ti o n

Voltage vs. For ward Current

Ic= 0.5mA

1mA

3mA

7mA

5mA

Ta= 25 C

Collecotr-emitter saturation voltage

V (sat) (V)

Forward current I (mA)

Voltage

0 25 50 75 100 125

100

150

200

015

0.5 1.0 1.5 2.0 2.5 3.0

100

200

500

01002 5 10 20 50

100

120

140

160

180

200

123456789

105

-25 0 5025 75 100 125

01/04/03 DB91088m-AAS/A6

R = 10k

L1k 100

Fig.8 Collector-emitter Saturation Voltag e

Fig.9 Collector Dark Cur rent vs.

Ambient Temperature Fig.10 Res ponse Time vs. Load

Fig.11 Frequency Respo nse

CEO

0-30

V = 5V

Ic= 2mA

T a= 25 C

I = 5mA

V = 5V

Ic= 1mA

I = 20mA

V = 2V

Ic= 2mA

T a= 25 C

vs. Ambient Te mperature

Ambient temperature Ta ( C)

Load resistance R (k )

Ambient temperature Ta ( C)

Frequency f (kHz)

R esponse time ( s)

Relative cur rent transfer ratio (%)

Collector dark current I (A)

Voltage gain Av (dB)

Coll e ctor-emitte r sa tu r a tion volta ge

V (sat) (V)

-10

0 25 50 75 100

100

150

-25

0 0 255075100

10 -25 0.2

0.050 25 50 75 100

-9

-8

-7

-6

-5

-11

0.1 0.2 0.5 1 2 5 10

0.5

100

200

500

0.5

-10

1000

Resistance

Fig.7 Rela tive Current Transfer Rat io

vs. Ambient Te mperature

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

V = 20V

1 2 5 10 20 100 500

-5

-20

-15

Test Circuit for Response Time

Test Circuit for Frequency Response

Input RD

Input

Output

Vcc

10%

90%

Output