Mar. 2003
CM1400DU-24NF
APPLICATION
UPS & General purpose inverters, etc
MITSUBISHI IGBT MODULES
CM1400DU-24NF
HIGH POWER SWITCHING USE
● IC................................................................ 1400A
● VCES ......................................................... 1200V
● Insulated Type
● 2-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
B : VHR-5N
A : VHR-2N
(J. S. T. Mfg. Co. Ltd)
A,B HOUSING Type
Tc measured point
(The side of Cu
base plate)
Tc measured point
(The side of Cu
base plate)
B
A
9-M6 NUTS 12
MOUNTING HOLES
PPS
LABEL
10.5
5.5
129.5
12
11 1921
25.1
15.7
18
42 42
15.7
42
34.6+1.0
–0.5
34.6+1.0
–0.5
150
166
38
±0.25
42.5
±0.25
38
±0.25
137.5
±0.25
74
±0.25
74
±0.25
4
1.9
±0.2
14 1414141414
1414
8-f6.5
C2E1
E2 C1
C1E1G1
E2G2C2
2
C2
C2E1 E2 C1
C1
G1 E1 G2E2
CIRCUIT DIAGRAM
Mar. 2003
VCE = VCES, VGE = 0V
IC = 140mA, VCE = 10V
VGE = VCES, VCE = 0V
Tj = 25°C
Tj = 125°C
Ic = 1400A, terminal-chip
VCE = 10V
VGE = 0V
VCC = 600V, IC = 1400A, VGE = 15V
VCC = 600V, IC = 1400A
VGE1 = VGE2 = 15V
RG = 0.22Ω, Inductive load switching operation
IE = 1400A
IE = 1400A, VGE = 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound applied*2 (1/2 module)
Tc measured point is just under the chips (IGBT part)
Tc measured point is just under the chips (FWDi part)
1200
±20
1400
2800
1400
2800
3900
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
1400
MITSUBISHI IGBT MODULES
CM1400DU-24NF
HIGH POWER SWITCHING USE
V
V
W
°C
°C
V
N • m
N • m
g
A
A
1
8
0.5
2.5
—
—
220
25
4.7
—
800
300
1000
300
700
—
3.4
0.032
0.053
—
0.014*3
0.023*3
2.2
mA
V
µA
V
mΩ
nF
nC
ns
ns
µC
V
°C/W
Ω
—
7
—
1.8
2.0
0.143
—
—
—
7200
—
—
—
—
—
90
—
—
—
0.016
—
—
—
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.22
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
Module lead resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance*1
Contact thermal resistance
Thermal resistance
External gate resistance
Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
*1 : Tc measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
TC = 25°C
Pulse (Note 2)
TC = 25°C
Pulse (Note 2)
TC = 25°C
Main terminal to base plate, AC 1 min.
Main Terminal M6
Mounting holes M6
T ypical value
Symbol Parameter
Collector current
Emitter current
Torque strength
Conditions UnitRatings
VCES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
Tj
Tstg
Viso
—
Unit
Typ.Min. Max.
—
MAXIMUM RATINGS
(Tj = 25°C)
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
ICES
VGE(th)
IGES
VCE(sat)
R(lead)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
Rth(j-c’)R
RG
Symbol Parameter Test conditions Limits
IC = 1400A, VGE = 15V
Mar. 2003
MITSUBISHI IGBT MODULES
CM1400DU-24NF
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT (A)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR CURRENT I
C
(A) GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT I
E
(A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE–V
CE
CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
0
2000
2500
2800
1500
1000
500
0246810
T
j
= 25°C
V
GE
= 20V
15V 12V
11V
10V
9V
8V
13V
0
2000
2500
1500
1000
500
04 8 12 16 20
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
1
2
3
4
5
00 500 1000 1500 2000
2500 2800
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
10
8
6
4
2
0206 8 12 1610 14 18
T
j
= 25°C
I
C
= 1400A
I
C
= 560A
I
C
= 2800A
10
2
2
3
5
7
10
3
2
3
5
7
10
4
01234
T
j
= 25°C
T
j
= 125°C
10
–1
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
2
10
0
357 2
10
1
357 2
10
2
357
C
ies
C
oes
C
res
V
GE
= 0V
Mar. 2003
MITSUBISHI IGBT MODULES
CM1400DU-24NF
HIGH POWER SWITCHING USE
10
2
10
3
57
10
4
23 57
10
2
2
3
5
7
10
3
2
3
5
7
10
4
2
3
5
7
10
123
td(off)
td(on)
tf
tr
10
2
10
3
23 57
10
4
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
trr
Irr
10
1
10
–3
10
–5
10
–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
7
5
3
2
10
–3
23 57 23 57 23 57 23 57
10
1
10
–2
10
–1
10
0
10
–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
3
2
23 57 23 57
Single Pulse
TC = 25°C0
4
8
16
12
20
0 2000 4000 6000 8000 10000
VCC = 400V
IC = 1400A
VCC = 600V
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
0120.5 1.5 2.5
Esw(off)
Esw(on)
Esw(off)
Esw(on)
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
10
2
210
3
357 2 10
4
357
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIMES (ns)
COLLECTOR CURRENT I
C
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT IE (A)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
(°C/W)
TMIE (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE CHARGE Q
G
(nC)
GATE-EMITTER VOLTAGE V
GE
(V)
Conditions:
VCC = 600V
VGE = ±15V
RG = 0.22Ω
Tj = 125°C
Inductive load
IGBT part:
Per unit base = Rth(j–c) = 0.032°C/W
FWDi part:
Per unit base = Rth(j–c) = 0.053°C/W
Conditions:
VCC = 600V
VGE = ±15V
RG = 0.22Ω
Tj = 125°C
Inductive load
I
C
-E
SW
(TYPICAL)
I
C
(A)
E
SW
(mJ/pulse)
R
G
-E
SW
(TYPICAL)
R
G
(Ω)
E
SW
(mJ/pulse)
Conditions:
VCC = 600V
VGE = ±15V
Tj = 125°C
RG = 0.22Ω
Inductive load
Conditions:
VCC = 600V
VGE = ±15V
Tj = 125°C
IC = 1400A
Inductive load
Mar. 2003
MITSUBISHI IGBT MODULES
CM1400DU-24NF
HIGH POWER SWITCHING USE
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
0120.5 1.5 2.5
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
2
210
3
357 2 10
4
357
Conditions:
VCC = 600V
VGE = ±15V
Tj = 125°C
RG = 0.22Ω
Inductive load
Err
Conditions:
VCC = 600V
VGE = ±15V
Tj = 125°C
IC = 1400A
Inductive load
Err
I
C
-E
rr
(TYPICAL)
I
E
(A)
E
rr
(mJ/pulse)
R
G
-E
rr
(TYPICAL)
R
G
(Ω)
E
SW
(mJ/pulse)
