MIXA81H1200EH - Zilog

20110518a

MIXA81H1200EH

IXYS reserves the right to change limits, test conditions and dimensions.

IGBT Module

H Bridge

VCES = 1200 V

IC25 = 120 A

VCE(sat) = 1.8 V

Features:

• Easy paralleling due to the positive

temperature coefﬁcient of the on-state

voltage

• Rugged XPT design

(Xtreme light Punch Through) results in:

- short circuit rated for 10 µsec.

- very low gate charge

- square RBSOA @ 3x IC

- low EMI

• Thin wafer technology combined with

the XPT design results in a competitive

low VCE(sat)

• SONIC™ diode

- fast and soft reverse recovery

- low operating forward voltage

Application:

• AC motor drives

• Solar inverter

• Medical equipment

• Uninterruptible power supply

• Air-conditioning systems

• Welding equipment

• Switched-mode and

resonant-mode power supplies

Package:

• "E3-Pack" standard outline

• Insulated copper base plate

• Soldering pins for PCB mounting

• Optimizes pin layout

Part name (Marking on product)

MIXA81H1200EH

E72873

19

3

4

1

2

9

10

13, 21

15

14, 20

11

12

20110518a

MIXA81H1200EH

IXYS reserves the right to change limits, test conditions and dimensions.

Ouput Inverter T1 - T6

Ratings

Symbol Deﬁnitions Conditions min. typ. max. Unit

VCES collector emitter voltage TVJ = 25°C 1200 V

VGES

VGEM

max. DC gate voltage

max. transient collector gate voltage

continuous

transient

±20

±30

V

IC25

IC80

collector current TC = 25°C

TC = 80°C

120

84

A

Ptot total power dissipation TC = 25°C 390 W

VCE(sat) collector emitter saturation voltage IC = 77 A; VGE = 15 V TVJ = 25°C

TVJ = 125°C

1.8

2.1

2.1 V

V

VGE(th) gate emitter threshold voltage IC = 3 mA; VGE = VCE TVJ = 25°C 5.4 6.0 6.5 V

ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C

TVJ = 125°C

0.03

0.6

0.2 mA

mA

IGES gate emitter leakage current VGE = ±20 V 500 nA

QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 75 A 230 nC

td(on)

tr

td(off)

tf

Eon

Eoff

turn-on delay time

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

inductive load TVJ = 125°C

VCE = 600 V; IC = 75 A

VGE = ±15 V; RG = 10 W

70

40

250

100

6.8

8.3

ns

mJ

RBSOA reverse bias safe operating area

V

GE

= ±15 V; R

G

= 10 W;

TVJ = 125°C

VCEK = 1200 V 225 A

SCSOA

tSC

ISC

short circuit safe operating area

short circuit duration

short circuit current

VCE = 900 V; VGE = ±15 V; TVJ = 125°C

RG = 10 W; non-repetitive 300

10 µs

A

RthJC thermal resistance junction to case (per IGBT) 0.32 K/W

Output Inverter D1 - D6

Ratings

Symbol Deﬁnitions Conditions min. typ. max. Unit

VRRM max. repetitve reverse voltage TVJ = 25°C 1200 V

IF25

IF80

forward current TC = 25°C

TC = 80°C

135

90

A

VFforward voltage IF = 100 A; VGE = 0 V TVJ = 25°C

TVJ = 125°C

1.95

2.2 V

V

Qrr

IRM

trr

Erec

reverse recovery charge

max. reverse recovery current

reverse recovery time

reverse recovery energy

VR = 600 V

diF /dt = -1600 A/µs TVJ = 125°C

IF = 100 A; VGE = 0 V

12.5

100

350

4

µC

A

ns

mJ

RthJC thermal resistance junction to case (per diode) 0.4 K/W

TC = 25°C unless otherwise stated

20110518a

MIXA81H1200EH

IXYS reserves the right to change limits, test conditions and dimensions.

Module

Ratings

Symbol Deﬁnitions Conditions min. typ. max. Unit

TVJ

TVJM

Tstg

operating temperature

max. virtual junction temperature

storage temperature

-40

125

150

125

°C

VISOL isolation voltage IISOL < 1 mA; 50/60 Hz 3000 V~

CTI comparative tracking index 200

Mdmounting torque (M5) 3 6 Nm

dS

dA

creep distance on surface

strike distance through air

10

7.5

mm

Rpin-chip resistance pin to chip 2.5 mW

RthCH thermal resistance case to heatsink with heatsink compound 0.02 K/W

Weight 300 g

Equivalent Circuits for Simulation

Ratings

Symbol Deﬁnitions Conditions min. typ. max. Unit

V0

R0

IGBT T1 - T6 TVJ = 150°C 1.1

17.9

V

mW

V0

R0

free wheeling diode D1 - D6 TVJ = 150°C 1.09

9.1

V

mW

I

V

0

R

0

TC = 25°C unless otherwise stated

20110518a

MIXA81H1200EH

IXYS reserves the right to change limits, test conditions and dimensions.

Part number

M = Module

I = IGBT

X = XPT

A = standard

81 = Current Rating [A]

H = H~ Bridge

1200 = Reverse Voltage [V]

EH = E3-Pack

Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code

Standard MIXA 81 H 1200 EH MIXA81H1200EH Box 5 511053

Circuit Diagram

Outline Drawing Dimensions in mm (1 mm = 0.0394“)

Product Marking

Remark:

Dimensions without tolerances acc. DIN ISO 2768-T1-m

XXX XX-XXXXX YYCWx

Part name

Date Code

Logo Prod.Index

2D Data Matrix

FOSS-ID 6 digits

19

3

4

1

2

9

10

13, 21

15

14, 20

11

12

20110518a

MIXA81H1200EH

IXYS reserves the right to change limits, test conditions and dimensions.

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

0

20

40

60

80

100

120

140

0 20 40 60 80 100 120 140 160

0

2

4

6

8

10

12

14

16

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

0

20

40

60

80

100

120

140

V

CE

[V]

I

C

[A]

Q

G

[nC]

V

GE

[V]

9 V

11 V

5 6 7 8 9 10 11 12 13

0

20

40

60

80

100

120

140

0 50 100 150 200 250 300

0

5

10

15

20

TVJ = 25°C

TVJ = 125°C

TVJ = 25°C

TVJ = 125°C

13 V

8 10 12 14 16 18 20 22 24

5

6

7

8

9

10

E

[mJ]

E

off

Fig. 1 Typ. output characteristics

V

CE

[V]

I

C

[A]

V

GE

= 15 V

17 V

19 V

Fig. 2 Typ. output characteristics

I

C

[A]

Fig. 3 Typ. tranfer characteristics

V

GE

[V]

Fig. 4 Typ. turn-on gate charge

Fig. 5 Typ. switching energy vs. collector current

E

on

Fig. 6 Typ. switching energy vs. gate resistance

R

G

[Ω]

E

[mJ]

I

C

[A]

E

on

E

off

I

C

= 75 A

V

CE

= 600 V

RG = 10 Ω

VCE = 600 V

VGE = ±15 V

TVJ = 125°C

IC = 75 A

VCE = 600 V

VGE = ±15 V

TVJ = 125°C

V

GE

= 15 V

TVJ = 125°C

Transistor T1 - T6

20110518a

MIXA81H1200EH

IXYS reserves the right to change limits, test conditions and dimensions.

1000 1200 1400 1600 1800 2000 2200

4

8

12

16

20

24

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

50

100

150

200

Q

rr

[µC]

I

F

[A]

V

F

[V] di

F

/dt [A/µs]

TVJ = 125°C

TVJ = 25°C

TVJ = 125°C

VR = 600 V

50 A

100 A

200 A

Fig. 7 Typ. Forward current versus V

F

Fig. 8 Typ. reverse recov.charge Q

rr

vs. di/dt

1000 1200 1400 1600 1800 2000 2200

40

60

80

100

120

140

160

I

RM

[A]

di

F

/dt [A/µs]

TVJ = 125°C

VR = 600 V

200 A

50 A

100 A

Fig. 9 Typ. peak reverse current I

RM

vs. di/dt

1000 1200 1400 1600 1800 2000 2200

0

100

200

300

400

500

600

700

t

rr

[ns]

di

F

/dt [A/µs]

200 A

50 A

100 A

TVJ = 125°C

VR = 600 V

Fig. 10 Typ. recovery time t

rr

versus di/dt

Fig. 11 Typ. recovery energy E

rec

versus di/dt

1000 1200 1400 1600 1800 2000 2200

0

2

4

6

8

E

rec

[mJ]

di

F

/dt [A/µs]

TVJ = 125°C

VR = 600 V

200 A

50 A

100 A

0.001 0.01 0.1 1 10

0.01

0.1

1

t

p

[s]

Z

thJC

[K/W]

Fig. 12 Typ. transient thermal impedance

IGBT

Diode

IGBT FRD

RitiRiti

1 0.072 0.002 0.092 0.002

2 0.037 0.03 0.067 0.03

3 0.156 0.03 0.155 0.03

4 0.055 0.08 0.086 0.08

Inverter D1 - D6